公开(公告)号：US09252178B2

公开(公告)日：2016-02-02

申请号：US13205127

申请日：2011-08-08

申请人： Kyung-bae Park ,  Kyu-sik Kim ,  Yong-wan Jin ,  Woong Choi ,  Kwang-hee Lee ,  Do-hwan Kim

发明人： Kyung-bae Park ,  Kyu-sik Kim ,  Yong-wan Jin ,  Woong Choi ,  Kwang-hee Lee ,  Do-hwan Kim

IPC分类号： H01L31/062 ,  H01L27/146 ,  H01L27/30 ,  H01L27/12 ,  H01L23/58 ,  H01L33/08

CPC分类号： H01L27/307 ,  H01L23/585 ,  H01L27/1214 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14647 ,  H01L27/14667 ,  H01L27/14685 ,  H01L27/14687 ,  H01L33/08 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.

摘要翻译： 提供了一种多层互补金属氧化物半导体（CMOS）图像传感器的像素，以及包括可以包括依次堆叠的第一至第三光电二极管层的光接收单元的图像传感器的制造方法，集成电路 IC），其形成在所述第一至第三光电二极管层之下和之下形成的电极层，以及将形成在所述第一至第三光电二极管层之下的电极层与所述第一至第三光电二极管层之间形成的电极层的接触插塞 晶体管的IC。

公开(公告)号：US08870456B2

公开(公告)日：2014-10-28

申请号：US12957061

申请日：2010-11-30

申请人： Duck-june Kim ,  Sang-hoon Ji ,  Woong-hee Shon ,  Sang-moo Lee ,  Kyung-tae Nam ,  Kwang-hee Lee

发明人： Duck-june Kim ,  Sang-hoon Ji ,  Woong-hee Shon ,  Sang-moo Lee ,  Kyung-tae Nam ,  Kwang-hee Lee

IPC分类号： H05G1/04 ,  H05G1/02 ,  A61B6/00

CPC分类号： A61B6/4435

摘要： An imaging apparatus includes: a rotator having a shape of a perforated circular plate and rotating around a rotating axis of a center of the perforated circular plate; and a supporter having a perforated circular plate and one side of which is connected to one side of the rotator such that the rotator is restricted only to rotation movement. The supporter includes a supporter opening/closing part a part of which is separated along the rotating axis and then rotates by a predetermined angle around the rotating axis, and the rotator includes a rotator opening/closing part a part of which integrally moves with the supporter opening/closing part.

摘要翻译： 一种成像装置，包括：旋转体，其具有多孔圆形板的形状，围绕穿孔圆板的中心的旋转轴线旋转; 以及具有多孔圆板并且其一侧连接到旋转器的一侧的支撑件，使得旋转体仅限于旋转运动。 支撑件包括支撑件打开/关闭部分，其一部分沿着旋转轴线分离，然后围绕旋转轴线旋转预定角度，并且旋转器包括旋转器打开/关闭部分，其一部分与支撑件一体地移动 开/关部分。

公开(公告)号：US08778296B2

公开(公告)日：2014-07-15

申请号：US12578352

申请日：2009-10-13

申请人： Jong-jin Park ,  Tae-gwan Park ,  Yu-han Lee ,  Kwang-hee Lee

发明人： Jong-jin Park ,  Tae-gwan Park ,  Yu-han Lee ,  Kwang-hee Lee

IPC分类号： C01B31/00

CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  C01P2004/13 ,  C09C1/44

摘要： A dispersible carbon nanotube (“CNT”) comprising a CNT backbone and an organic moiety attached to the carbon nanotube backbone and comprising a hydroxyl substituted C6 to C14 aromatic group are described, as well as a CNT-polymer composite and a method of manufacturing the CNT-polymer composite.

摘要翻译： 描述了包含CNT主链和连接到碳纳米管骨架并包含羟基取代的C 6至C 14芳族基团的有机部分的可分散碳纳米管（“CNT”），以及CNT-聚合物复合材料和制造 CNT-聚合物复合材料。

公开(公告)号：US08587700B2

公开(公告)日：2013-11-19

申请号：US12589157

申请日：2009-10-19

申请人： Jun-taek Lee ,  Byung-hyun Yim ,  Kwang-hee Lee ,  Ji-hoon Jung

发明人： Jun-taek Lee ,  Byung-hyun Yim ,  Kwang-hee Lee ,  Ji-hoon Jung

IPC分类号： H04N9/64 ,  H04N5/335

CPC分类号： H04N17/002

摘要： A method of detecting defects in an image sensor that may occur from a floating diffusion area of the image sensor, a tester using the method, and a control signal generator using the method include a photo diode generating charges corresponding to an image signal; a transmission transistor having a first terminal connected to a the photodiode and a second terminal connected to a floating diffusion area, thereby transmitting the charges generated in the photo diode to the floating diffusion area in response to a charge transmission control signal; and a reset transistor having a first terminal applied by a reset voltage and a second transistor connected to the floating diffusion area, thereby transmitting the reset voltage to the floating diffusion area in response to a reset control signal. The reset transistor is turned on during at least one sampling zone selected between reset level sampling and signal level sampling that are performed with respect to the image sensor.

摘要翻译： 一种检测图像传感器中的可能从图像传感器的浮动扩散区域发生的缺陷的方法，使用该方法的测试仪和使用该方法的控制信号发生器的方法包括：光电二极管产生与图像信号相对应的电荷; 传输晶体管，其具有连接到光电二极管的第一端子和连接到浮动扩散区域的第二端子，从而响应于电荷传输控制信号将在光电二极管中产生的电荷传输到浮动扩散区域; 以及复位晶体管，其具有通过复位电压施加的第一端子和连接到浮动扩散区域的第二晶体管，从而响应于复位控制信号将复位电压传输到浮动扩散区域。 复位晶体管在相对于图像传感器执行的复位电平采样和信号电平采样之间所选择的至少一个采样区域中导通。

公开(公告)号：US20110316538A1

公开(公告)日：2011-12-29

申请号：US12957061

申请日：2010-11-30

申请人： Duck-june KIM ,  Sang-hoon Ji ,  Woong-hee Shon ,  Sang-moo Lee ,  Kyung-tae Nam ,  Kwang-hee Lee

发明人： Duck-june KIM ,  Sang-hoon Ji ,  Woong-hee Shon ,  Sang-moo Lee ,  Kyung-tae Nam ,  Kwang-hee Lee

IPC分类号： G01V3/00

CPC分类号： A61B6/4435

摘要： An imaging apparatus includes: a rotator having a shape of a perforated circular plate and rotating around a rotating axis of a center of the perforated circular plate; and a supporter having a perforated circular plate and one side of which is connected to one side of the rotator such that the rotator is restricted only to rotation movement. The supporter includes a supporter opening/closing part a part of which is separated along the rotating axis and then rotates by a predetermined angle around the rotating axis, and the rotator includes a rotator opening/closing part a part of which integrally moves with the supporter opening/closing part.

摘要翻译： 一种成像装置，包括：旋转体，其具有多孔圆形板的形状，围绕穿孔圆板的中心的旋转轴线旋转; 以及具有多孔圆板并且其一侧连接到旋转器的一侧的支撑件，使得旋转体仅限于旋转运动。 支撑件包括支撑件打开/关闭部分，其一部分沿着旋转轴线分离，然后围绕旋转轴线旋转预定角度，并且旋转器包括旋转器打开/关闭部分，其一部分与支撑件一体地移动 开/关部分。

公开(公告)号：US07964462B2

公开(公告)日：2011-06-21

申请号：US12270033

申请日：2008-11-13

申请人： Dong-chul Yoo ,  Han-mei Choi ,  Kwang-hee Lee ,  Kyong-won An ,  Cha-young Yoo

发明人： Dong-chul Yoo ,  Han-mei Choi ,  Kwang-hee Lee ,  Kyong-won An ,  Cha-young Yoo

IPC分类号： H01L21/336

CPC分类号： H01L29/792 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/3115 ,  H01L21/3162 ,  H01L21/31645 ,  H01L29/513 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881

摘要： Provided is a method of manufacturing a semiconductor device. The method includes: forming a charge storage layer on a substrate on which a gate insulating layer is formed; forming a first metal oxide layer on the charge storage layer using a first reaction source including a metal oxide layer precursor and a first oxidizing agent and changing the first metal oxide layer to a second metal oxide layer using a second reaction source including a second oxidizing agent having larger oxidizing power than the first oxidizing agent and repeating the forming of the first metal oxide layer and the changing of the first metal oxide layer to the second metal oxide layer several times to form a blocking insulating layer; and forming an electrode layer on the blocking insulating layer.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括：在其上形成有栅极绝缘层的基板上形成电荷存储层; 使用包括金属氧化物层前体和第一氧化剂的第一反应源在电荷存储层上形成第一金属氧化物层，并且使用包括第二氧化剂的第二反应源将第一金属氧化物层改变为第二金属氧化物层 具有比第一氧化剂更大的氧化能力，并且重复形成第一金属氧化物层和将第一金属氧化物层改变为第二金属氧化物层数次以形成阻挡绝缘层; 以及在所述阻挡绝缘层上形成电极层。

公开(公告)号：US07824501B2

公开(公告)日：2010-11-02

申请号：US11781334

申请日：2007-07-23

申请人： Hoon-sang Choi ,  Jong-cheol Lee ,  Ki-vin Im ,  Eun-ae Chung ,  Sang-yeol Kang ,  Young-sun Kim ,  Kwang-hee Lee

发明人： Hoon-sang Choi ,  Jong-cheol Lee ,  Ki-vin Im ,  Eun-ae Chung ,  Sang-yeol Kang ,  Young-sun Kim ,  Kwang-hee Lee

IPC分类号： B08B9/08 ,  B08B3/08 ,  B08B3/10 ,  B08B5/00

CPC分类号： C23C16/45525 ,  C23C16/4401 ,  C23C16/45544

摘要： Provided is an in-situ method of cleaning a vaporizer of an atomic layer deposition apparatus during a dielectric layer deposition process, to prevent nozzle blocking in the vaporizer and an atomic layer deposition apparatus. During the dielectric layer deposition process, the following steps are repeated: supplying a first source gas for dielectric layer deposition into a chamber of an atomic layer deposition apparatus; purging the first source gas; supplying a second source gas into the chamber of the atomic layer deposition apparatus; purging the second source gas, the in-situ method of cleaning the vaporizer is performed after supplying the first source gas for dielectric layer deposition and before supplying the first source gas again.

摘要翻译： 提供了一种在电介质层沉积工艺期间清洁原子层沉积设备的蒸发器的原位方法，以防止蒸发器和原子层沉积设备中的喷嘴堵塞。 在电介质层沉积过程中，重复以下步骤：将用于电介质层沉积的第一源气体供应到原子层沉积设备的腔室中; 净化第一源气; 将第二源气体供应到原子层沉积设备的腔室中; 吹扫第二源气体时，在供给用于电介质层沉积的第一源气体并再次供应第一源气体之前执行清洗蒸发器的原位方法。

公开(公告)号：US07049232B2

公开(公告)日：2006-05-23

申请号：US10657596

申请日：2003-09-08

申请人： Kwang-hee Lee ,  Cha-young Yoo ,  Han-jin Lim ,  Sung-tae Kim ,  Suk-jin Chung ,  Wan-don Kim ,  Jung-hee Chung ,  Jin-il Lee

发明人： Kwang-hee Lee ,  Cha-young Yoo ,  Han-jin Lim ,  Sung-tae Kim ,  Suk-jin Chung ,  Wan-don Kim ,  Jung-hee Chung ,  Jin-il Lee

IPC分类号： H01L21/44

CPC分类号： C23C16/18 ,  H01L21/28556 ,  H01L27/10852 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/65

摘要： Provided are 1) a method for forming a ruthenium film under a single process condition, whereby high adhesion of the ruthenium film to a lower layer is maintained, and 2) a method for manufacturing an metal-insulator-metal (MIM) capacitor using the ruthenium film forming method. The method for forming a ruthenium film includes supplying bis(isoheptane-2,4-dionato)norbornadiene ruthenium at a flow rate of 0.2–1 ccm and oxygen at a flow rate of 20–60 sccm, and depositing the ruthenium film at a temperature of 330–430° C. under a pressure of 0.5–5 Torr using chemical vapor deposition (CVD).

公开(公告)号：US06260934B1

公开(公告)日：2001-07-17

申请号：US09366154

申请日：1999-08-03

申请人： Kwang-hee Lee

发明人： Kwang-hee Lee

IPC分类号： B60T832

CPC分类号： B60T7/122 ,  B60T8/175 ,  B60T8/17616 ,  B60T8/3605 ,  B60T8/46 ,  B60T8/58

摘要： The processing for controlling brake systems, which can control the release time of the brake force in consideration of the gradient degree and the load and vehicle weight when the vehicle starts after a stop, so as to prevent the vehicle from rolling backward on the slope, comprising the steps of determining if conditions of a vehicle are suitable for entering a slope start control mode; determining if air pressure in air tanks are maintained over a predetermined pressure after entering the slope start control mode, when it has been determined that the conditions of the vehicle were suitable for the slope start control mode; maintaining brake force by controlling of solenoid valves without brake pedal operation, when it has been determined that the air pressure in the air tanks were maintained over the predetermined pressure; determining if conditions of doors and transmission gear position, clutch stroke, and acceleration pedal operation are suitable for the vehicle's start, while maintaining the brake force without brake pedal operation; determining if the degree of the road gradient is within a predetermined range for the vehicle's steady start on the basis of the data detected by gradient sensor or by a driver's mode selection, when it has been determined that the various conditions were suitable for the vehicle's steady start; calculating pressure reduction rates for the air pressure in order to release the brake force on the basis of the RPM of the engine, vehicle's weight, and amount of stroke displacement applied on the clutch pedal, when it has been determined that the gradient degree is in the range for the vehicle's steady start; releasing the brake force by opening of solenoid valves according to the calculated reduced air pressure rate; and controlling ABS or ASR according to the wheel speed detected by the speed sensors, if an operation of the brake pedal is detected while the vehicle is running.