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    PHOTONIC SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
    32.
    发明申请
    PHOTONIC SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE 有权

    公开(公告)号：US20210088723A1

    公开(公告)日：2021-03-25

    申请号：US16930558

    申请日：2020-07-16

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chen-Hua Yu ,  Hsing-Kuo Hsia ,  Kuo-Chiang Ting ,  Sung-Hui Huang ,  Shang-Yun Hou ,  Chi-Hsi Wu

    IPC: G02B6/122

    Abstract: A device includes a first package connected to an interconnect substrate, wherein the interconnect substrate includes conductive routing; and a second package connected to the interconnect substrate, wherein the second package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler and to a photodetector; a via extending through the substrate; an interconnect structure over the photonic layer, wherein the interconnect structure is connected to the photodetector and to the via; and an electronic die bonded to the interconnect structure, wherein the electronic die is connected to the interconnect structure.

    Package structure and method for forming the same
    33.
    发明授权
    Package structure and method for forming the same 有权

    公开(公告)号：US10886147B1

    公开(公告)日：2021-01-05

    申请号：US16571786

    申请日：2019-09-16

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Kuan-Yu Huang ,  Sung-Hui Huang ,  Shang-Yun Hou

    IPC: H01L21/48 ,  H01L21/56

    Abstract: A method for forming the package structure is provided. The method includes forming a die structure over a first surface of a first substrate, and forming a plurality of electrical connectors below a second surface of the first substrate. The method also includes forming a first protruding structure below the second surface of the first substrate, and the electrical connectors are surrounded by the first protruding structure. The method further includes forming a second protruding structure over a second substrate, and bonding the first substrate to the second substrate. The electrical connectors are surrounded by the second protruding structure, and the first protruding structure does not overlap with the second protruding structure.

    Optical transceiver and manufacturing method thereof
    34.
    发明授权
    Optical transceiver and manufacturing method thereof 有权

    公开(公告)号：US12253729B2

    公开(公告)日：2025-03-18

    申请号：US17952681

    申请日：2022-09-26

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chen-Hua Yu ,  Hsing-Kuo Hsia ,  Sung-Hui Huang ,  Kuan-Yu Huang ,  Kuo-Chiang Ting ,  Shang-Yun Hou ,  Chi-Hsi Wu

    IPC: G02B6/42 ,  H01L23/00 ,  H01L23/48

    Abstract: A structure including a photonic integrated circuit die, an electric integrated circuit die, a semiconductor dam, and an insulating encapsulant is provided. The photonic integrated circuit die includes an optical input/output portion and a groove located in proximity of the optical input/output portion, wherein the groove is adapted for lateral insertion of at least one optical fiber. The electric integrated circuit die is disposed over and electrically connected to the photonic integrated circuit die. The semiconductor dam is disposed over the photonic integrated circuit die. The insulating encapsulant is disposed over the photonic integrated circuit die and laterally encapsulates the electric integrated circuit die and the semiconductor dam.

    Photonic semiconductor device and method of manufacture
    35.
    发明授权
    Photonic semiconductor device and method of manufacture 有权

    公开(公告)号：US12242108B2

    公开(公告)日：2025-03-04

    申请号：US18526706

    申请日：2023-12-01

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chen-Hua Yu ,  Hsing-Kuo Hsia ,  Kuo-Chiang Ting ,  Sung-Hui Huang ,  Shang-Yun Hou ,  Chi-Hsi Wu

    IPC: G02B6/122 ,  G02B6/12

    Abstract: A device includes a first package connected to an interconnect substrate, wherein the interconnect substrate includes conductive routing; and a second package connected to the interconnect substrate, wherein the second package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler and to a photodetector; a via extending through the substrate; an interconnect structure over the photonic layer, wherein the interconnect structure is connected to the photodetector and to the via; and an electronic die bonded to the interconnect structure, wherein the electronic die is connected to the interconnect structure.

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