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    GROUP III NITRIDE SEMICONDUCTOR OPTICAL DEVICE
    32.
    发明申请
    GROUP III NITRIDE SEMICONDUCTOR OPTICAL DEVICE 有权
    III类氮化物半导体光学器件

    公开(公告)号：US20110121265A1

    公开(公告)日：2011-05-26

    申请号：US13055690

    申请日：2010-02-26

    申请人： Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Katsushi Akita ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

    发明人： Masaki Ueno ,  Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Katsushi Akita ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

    IPC分类号： H01L29/66

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01L33/325 ,  H01S5/3202

    摘要： A group III nitride semiconductor optical device 11a has a group III nitride semiconductor substrate 13 having a main surface 13a forming a finite angle with a reference plane Sc orthogonal to a reference axis Cx extending in a c-axis direction of the group III nitride semiconductor and an active layer 17 of a quantum-well structure, disposed on the main surface 13a of the group III nitride semiconductor substrate 13, including a well layer 28 made of a group III nitride semiconductor and a plurality of barrier layers 29 made of a group III nitride semiconductor. The main surface 13a exhibits semipolarity. The active layer 17 has an oxygen content of at least 1×1017 cm−3 but not exceeding 8×1017 cm−3. The plurality of barrier layers 29 contain an n-type impurity other than oxygen by at least 1×1017 cm−3 but not exceeding 1×1019 cm−3 in an upper near-interface area 29u in contact with a lower interface 28Sd of the well layer 28 on the group III nitride semiconductor substrate side.

    摘要翻译： III族氮化物半导体光学元件11a具有III族氮化物半导体衬底13，该III族氮化物半导体衬底13具有与在III族氮化物半导体的c轴方向上延伸的参考轴Cx正交的参考平面Sc形成有限角度的主表面13a; 设置在III族氮化物半导体衬底13的主表面13a上的量子阱结构的有源层17，包括由III族氮化物半导体制成的阱层28和由III族组成的多个势垒层29 氮化物半导体。 主表面13a具有半极性。 活性层17的氧含量至少为1×1017cm-3，但不超过8×1017cm-3。 多个势垒层29在上接近界面区域29u中含有除氧之外的至少1×1017cm-3但不超过1×1019cm-3的n型杂质，该上接近界面区29u与下界面28Sd接触 III族氮化物半导体衬底侧的阱层28。

    Nitride semiconductor light emitting device
    38.
    发明授权
    Nitride semiconductor light emitting device 失效
    氮化物半导体发光器件

    公开(公告)号：US08513684B2

    公开(公告)日：2013-08-20

    申请号：US13294034

    申请日：2011-11-10

    申请人： Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo

    发明人： Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo

    IPC分类号： H01L33/00

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3211

    摘要： A nitride semiconductor light emitting device is provided. A core semiconductor region, a first cladding region, and a second cladding region are mounted on a nonpolar primary surface of a support substrate of GaN which is not the polar plane. The core semiconductor region includes an active layer and a carrier block layer. The first cladding region includes an n-type AlGaN cladding layer and an n-type InAlGaN cladding layer. The n-type InAlGaN cladding layer is provided between the n-type AlGaN cladding layer and the active layer. A misfit dislocation density at an interface is larger than that at an interface. The AlGaN cladding layer is lattice-relaxed with respect to the GaN support substrate and the InAlGaN cladding layer is lattice-relaxed with respect to the AlGaN cladding layer.

    摘要翻译： 提供一种氮化物半导体发光器件。 核心半导体区域，第一包层区域和第二包层区域安装在不是极平面的GaN的支撑衬底的非极性主表面上。 核心半导体区域包括有源层和载流子阻挡层。 第一包层区域包括n型AlGaN包覆层和n型InAlGaN包覆层。 n型InAlGaN包层设置在n型AlGaN包层和有源层之间。 界面处的错配位错密度大于界面处的位错密度。 AlGaN包层相对于GaN支撑衬底是晶格弛豫的，并且InAlGaN包层相对于AlGaN包层是晶格弛豫的。

    Method of making semiconductor light-emitting device
    39.
    发明授权
    Method of making semiconductor light-emitting device 失效
    制造半导体发光器件的方法

    公开(公告)号：US08357558B2

    公开(公告)日：2013-01-22

    申请号：US12837248

    申请日：2010-07-15

    申请人： Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

    发明人： Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

    IPC分类号： H01L21/00

    CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/0014 ,  H01S5/34333

    摘要： A method of making a semiconductor light-emitting device involves the steps of selecting at least one tilt angle for a primary surface of a substrate to evaluate the direction of piezoelectric polarization in a light-emitting layer, the substrate comprising a group III nitride semiconductor; preparing a substrate having the primary surface, the primary surface having the selected tilt angle, and the primary surface comprising the group III nitride semiconductor; forming a quantum well structure and p- and n-type gallium nitride semiconductor layers for the light-emitting layer at the selected tilt angle to prepare a substrate product; measuring photoluminescence of the substrate product while applying a bias to the substrate product, to determine bias dependence of the photoluminescence; evaluating the direction of the piezoelectric polarization in the light-emitting layer at the selected tilt angle on the primary surface of the substrate by the determined bias dependence; determining which of the primary surface or the back surface of the substrate is to be used, based on the evaluation to select a plane orientation of a growth substrate for making the semiconductor light-emitting device; and forming a semiconductor laminate for the semiconductor light-emitting device on the primary surface of the growth substrate. The tilt angle is defined by the primary surface of the substrate and the (0001) plane of the group III nitride semiconductor. Each of the well layer and the barrier layer of the light-emitting layer extends along a reference plane tilting from a plane perpendicular to a reference axis extending along the c-axis of the group III nitride semiconductor.

    摘要翻译： 制造半导体发光器件的方法包括以下步骤：为衬底的主表面选择至少一个倾斜角以评估发光层中的压电极化的方向，所述衬底包括III族氮化物半导体; 制备具有主表面的基底，所述主表面具有所选择的倾斜角，并且所述主表面包含III族氮化物半导体; 以选定的倾斜角形成量子阱结构和用于发光层的p型和n型氮化镓半导体层以制备衬底产品; 测量衬底产物的光致发光，同时向衬底产物施加偏压，以确定光致发光的偏差依赖性; 以所确定的偏置依赖性，以所选择的倾斜角在所述基板的主表面上评估所述发光层中的所述压电极化的方向; 基于选择用于制造半导体发光器件的生长衬底的平面取向的评估，确定要使用衬底的主表面或背表面中的哪一个; 以及在所述生长衬底的主表面上形成用于所述半导体发光器件的半导体层压体。 倾斜角由衬底的主表面和III族氮化物半导体的（0001）面限定。 发光层的阱层和阻挡层中的每一个沿着从垂直于沿着III族氮化物半导体的c轴延伸的参考轴的平面倾斜的参考平面延伸。