公开(公告)号：US4411538A

公开(公告)日：1983-10-25

申请号：US290300

申请日：1981-08-05

申请人： Kiyomitsu Asano ,  Toshikatsu Kondo ,  Shigeru Mizuno

发明人： Kiyomitsu Asano ,  Toshikatsu Kondo ,  Shigeru Mizuno

IPC分类号： B41J2/26 ,  B41J2/28 ,  B41J3/12

CPC分类号： B41J2/28

摘要： A print head adapted to be used for a dot-printer. A novel support device is disposed in the print head for pivotally supporting one end of each of a plurality of armatures on a support member. The support device in this invention comprises; (a) a leaf spring disposed longitudinally of the armature, secured at one end thereof to the support member and at the other end thereof to the armature, and provided in a middle portion thereof with a through-bore, and (b) a wire spring extending through the through-bore in the leaf spring at a right angle thereto, and secured at one end thereof to the support member and at the other end thereof to the armature.

摘要翻译： 适用于点阵式打印机的打印头。 一种新颖的支撑装置设置在打印头中，用于将多个电枢中的每一个的一端枢转地支撑在支撑构件上。 本发明的支撑装置包括： （a）沿电枢纵向设置的板簧，其一端固定在支撑构件上，另一端固定在电枢上，并在其中间部分设有通孔，（b）电线 弹簧以与其成直角的方式延伸穿过板簧中的通孔，并且其一端固定在支撑构件上，另一端固定在电枢上。

公开(公告)号：US20180370751A1

公开(公告)日：2018-12-27

申请号：US16116161

申请日：2018-08-29

申请人： Ken SAWADA ,  Shigeru Mizuno ,  Hiroyuki Kuno ,  Takuya Fukuhara

发明人： Ken SAWADA ,  Shigeru Mizuno ,  Hiroyuki Kuno ,  Takuya Fukuhara

IPC分类号： B65H45/14

CPC分类号： B65H45/14 ,  B65H2220/08 ,  B65H2511/224 ,  B65H2801/27

摘要： A sheet processing apparatus that forms a folding line on a sheet includes first and second folding rollers that form a folding line on the sheet by rotating a bent sheet while pinching from sheet surfaces and a first pressing unit that presses the second folding roller against the first folding roller in an arbitrary portion in a rotating shaft direction of the second folding roller.

公开(公告)号：US20110076390A1

公开(公告)日：2011-03-31

申请号：US12571162

申请日：2009-09-30

申请人： Frank M. Cerio, JR. ,  Shigeru Mizuno ,  Jonathan Reid ,  Thomas Ponnuswamy

发明人： Frank M. Cerio, JR. ,  Shigeru Mizuno ,  Jonathan Reid ,  Thomas Ponnuswamy

IPC分类号： B05D5/00 ,  B05D7/22 ,  C25D5/02

CPC分类号： C23C18/165 ,  C23C18/161 ,  C23C18/1651 ,  C23C18/1692 ,  C23C18/38 ,  C25D5/02 ,  C25D5/10 ,  C25D5/38 ,  C25D5/50 ,  H01L21/28556 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/76883

摘要： Methods are provided for multi-step Cu metal plating on a continuous Ru metal film in recessed features found in advanced integrated circuits. The use of a continuous Ru metal film prevents formation of undesirable micro-voids during Cu metal filling of high-aspect-ratio recessed features, such as trenches and vias, and enables formation of large Cu metal grains that include a continuous Cu metal layer plated onto the continuous Ru metal film. The large Cu grains lower the electrical resistivity of the Cu filled recessed features and increase the reliability of the integrated circuit.

摘要翻译： 提供了在先进集成电路中发现的凹陷特征中的连续Ru金属膜上的多步Cu金属电镀方法。 使用连续的Ru金属膜可防止在高纵横比凹陷特征（例如沟槽和通孔）的Cu金属填充期间形成不期望的微孔，并且能够形成大的Cu金属晶粒，其包括连续的Cu金属层电镀 到连续的Ru金属膜上。 大的Cu晶粒降低了Cu填充凹陷特征的电阻率，增加了集成电路的可靠性。

公开(公告)号：US07642201B2

公开(公告)日：2010-01-05

申请号：US12018813

申请日：2008-01-24

申请人： Frank M. Cerio, Jr. ,  Shigeru Mizuno ,  Tsukasa Matsuda ,  Adam Selsey

发明人： Frank M. Cerio, Jr. ,  Shigeru Mizuno ,  Tsukasa Matsuda ,  Adam Selsey

IPC分类号： H01L21/31

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/32 ,  C23C14/541 ,  H01L21/2855 ,  H01L21/76846 ,  H01L21/76865

摘要： An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a multi-step process within a vacuum chamber which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang.

摘要翻译： iPVD系统被编程为在真空室内使用多步骤的方法将均匀的材料（例如阻挡材料）沉积在半导体衬底上的高纵横比纳米尺寸特征中，这增强了与场和底部覆盖（s ）同时最小化或消除突出。

公开(公告)号：US20090059462A1

公开(公告)日：2009-03-05

申请号：US12289207

申请日：2008-10-22

申请人： Shigeru Mizuno ,  Masahito Ishihara ,  Sunil Wickramanayaka ,  Naoki Miyazaki

发明人： Shigeru Mizuno ,  Masahito Ishihara ,  Sunil Wickramanayaka ,  Naoki Miyazaki

IPC分类号： H01L21/683

CPC分类号： H01L21/6875 ,  H01L21/6833 ,  H02N13/00

摘要： An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.

公开(公告)号：US20070176357A1

公开(公告)日：2007-08-02

申请号：US11699405

申请日：2007-01-30

申请人： Toru Horio ,  Minoru Hattori ,  Shigeru Mizuno ,  Ikumi Takashima ,  Koji Furuta ,  Masanobu Kimata ,  Miyuki Ito ,  Yoshihide Sugiyama ,  Akihiro Tsuno ,  Nakayama Naoya ,  Ueno Shinichi

发明人： Toru Horio ,  Minoru Hattori ,  Shigeru Mizuno ,  Ikumi Takashima ,  Koji Furuta ,  Masanobu Kimata ,  Miyuki Ito ,  Yoshihide Sugiyama ,  Akihiro Tsuno ,  Nakayama Naoya ,  Ueno Shinichi

IPC分类号： B65H31/26

CPC分类号： B65H33/08 ,  B65H31/34 ,  B65H2301/3621 ,  B65H2301/4219 ,  B65H2405/351

摘要： A sheet medium adjustment apparatus, e.g., in an image forming system, includes: an ejector to eject a conveyed sheet; a stacking device to stack each sheet ejected from the sheet ejector into a stack on a tray; a moving device to shift the stacking device in a movement direction perpendicular to a sheet-ejecting direction; a sheet aligning member to align ends of the sheets in the stack that are parallel to the sheet-ejecting direction; a stepping motor to move the sheet aligning member; and an evacuation device to evacuate the aligning member by an amount representing an evacuation displacement in the movement direction at a timing of aligning the sheet, the evacuation displacement being determined adaptively according to at least one of an attribute of a given sheet in the stack, an attribute of the stack as a whole and an attribute of the tray.

摘要翻译： 片状介质调节装置，例如在图像形成系统中，包括：喷射器，用于喷射传送的片材; 堆叠装置，用于将从片材喷射器排出的每个片材堆叠在托盘上的堆叠中; 移动装置，用于沿垂直于纸张排出方向的移动方向移动所述堆叠装置; 片材对准构件，用于对准堆叠中与片材排出方向平行的片材的端部; 用于移动所述纸对齐部件的步进电机; 以及抽出装置，用于在对准所述片材的定时将所述对准构件排出表示所述移动方向上的抽空位移的量，所述抽空位移根据所述堆叠中的给定片材的属性中的至少一个自适应地确定， 整个堆栈的属性和托盘的属性。

公开(公告)号：US06844661B2

公开(公告)日：2005-01-18

申请号：US10625747

申请日：2003-07-24

申请人： Shigeru Mizuno

发明人： Shigeru Mizuno

IPC分类号： B41J2/045 ,  B41J2/055 ,  B41J2/14 ,  C04B35/49 ,  C04B35/493 ,  C04B35/499 ,  H01L41/09 ,  H01L41/187

CPC分类号： H01L41/187 ,  B41J2/14209 ,  B41J2002/14217 ,  B41J2002/14225 ,  B41J2002/14306 ,  B41J2002/14491 ,  B41J2202/20 ,  C04B35/493 ,  C04B35/499

摘要： A piezoelectric ceramic composition comprises a composite perovskite type oxide of Pb(Ni1/3Nb2/3)O3 and simple perovskite type oxides of PbTiO3 and PbZrO3 as main components. The composition range of the main components exists in an area surrounded by lines for connecting respective composition points, i.e., a point A (X=40, Y=37, Z=23), a point B (X=36, Y=37, Z=27), a point C (X=33, Y=40, Z=27), and a point D (X=37, Y=40, Z=23) in a triangular coordinate system defined by apexes of Pb(Ni1/3Nb2/3)O3, PbTiO3, and PbZrO3, provided that Pb(Ni1/3Nb2/3)O3 amounts to X molar %, PbTiO3 amounts to Y molar %, and PbZrO3 amounts to Z molar %. The composition makes it possible to realize a large strain amount while suppressing the relative dielectric constant to be low. The composition is preferably usable for an piezoelectric actuator of an ink-jet head.

摘要翻译： 压电陶瓷组合物包括Pb（Ni1 / 3Nb2 / 3）O3的复合钙钛矿型氧化物和PbTiO3和PbZrO3的简单钙钛矿型氧化物作为主要成分。 主要成分的组成范围存在于用于连接各组成点的线（即A点（X = 40，Y = 37，Z = 23），点B（X = 36，Y = 37） ，Z = 27），点C（X = 33，Y = 40，Z = 27），点D（X = 37，Y = 40，Z = 23） （Ni1 / 3Nb2 / 3）O3，PbTiO3和PbZrO3，条件是Pb（Ni1 / 3Nb2 / 3）O3为X摩尔％，PbTiO3为Y摩尔％，PbZrO3为Z摩尔％。 该组成使得可以实现大的应变量，同时抑制相对介电常数低。 组合物优选可用于喷墨头的压电致动器。

公开(公告)号：US6085690A

公开(公告)日：2000-07-11

申请号：US394900

申请日：1999-09-13

申请人： Shigeru Mizuno

发明人： Shigeru Mizuno

IPC分类号： C23C16/44 ,  C23C16/02 ,  C23C16/455 ,  C23C16/50 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45519

摘要： A deposition apparatus has a reactor 11 which is furnished with a reaction gas delivery part 13 and a substrate holder 12 in which reaction gas is delivered from the reaction gas delivery part to a substrate 23 on the substrate holder, and a thin film is deposited on the substrate by means of a chemical reaction which results from supplying HF power to the reaction gas delivery part. Plasma is generated and excites the reaction gas. The gas delivery parts 27, 29, 30, 31 produce a flow of purge gas in the dead space surrounding the reaction gas deliver part. Reaction gas which is liable to be retained in the dead space is driven out by the flow of this gas, and circulation and retention of reaction gas are prevented.

摘要翻译： 沉积设备具有反应器11，其具有反应气体输送部分13和基板保持器12，反应气体从反应气体输送部分输送到基板保持器上的基板23，并且薄膜沉积在 通过由反应气体输送部供给HF功率而产生的化学反应形成基板。 产生等离子体并激发反应气体。 气体输送部分27,29,30,31在围绕反应气体输送部分的死空间中产生吹扫气体流。 容易保留在死空间中的反应气体被该气体的流动驱出，并且防止了反应气体的循环和滞留。

公开(公告)号：US5840366A

公开(公告)日：1998-11-24

申请号：US520298

申请日：1995-08-28

申请人： Shigeru Mizuno ,  Akihiko Koura

发明人： Shigeru Mizuno ,  Akihiko Koura

IPC分类号： C23C16/02 ,  C23C16/14 ,  H01L21/285

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/14

摘要： A W film having good surface morphology and high reflectance is formed while avoiding any degradation of the characteristics such as specific resistivity. The method for forming a thin film is carried out by depositing a W film on a heated substrate using CVD. The raw material gas is WF.sub.6, and the reducing gases are SiH.sub.4 and H.sub.2. In the first stage of the film formation, the reaction between WF.sub.6 and SiH.sub.4 forms nuclei on the surface of the substrate. In the second stage, following the first stage, the reaction between WF.sub.6 and H.sub.2 forms the W film. The second stage is controlled to form crystal grains of a predetermined size. The first stage and the second stage are alternately repeated as many times as necessary.

摘要翻译： 形成具有良好的表面形态和高反射率的W膜，同时避免诸如电阻率等特性的任何劣化。 形成薄膜的方法是通过使用CVD在加热的基板上沉积W膜来进行的。 原料气为WF6，还原气为SiH4和H2。 在成膜的第一阶段，WF6和SiH4之间的反应在基材的表面上形成核。 在第二阶段，在第一阶段之后，WF6和H2之间的反应形成W膜。 控制第二阶段以形成预定尺寸的晶粒。 第一阶段和第二阶段根据需要交替重复多次。

公开(公告)号：US5270250A

公开(公告)日：1993-12-14

申请号：US812483

申请日：1991-12-23

申请人： Tsuyoshi Murai ,  Shigeaki Nakamura ,  Toshinori Konaka ,  Shigeru Mizuno

发明人： Tsuyoshi Murai ,  Shigeaki Nakamura ,  Toshinori Konaka ,  Shigeru Mizuno

IPC分类号： H01L21/265 ,  H01L21/00 ,  H01L21/223 ,  H01L21/26 ,  H01C21/265

CPC分类号： H01L21/67103 ,  H01L21/2236

摘要： A method of fabricating a semiconductor substrate is characterized in that a semiconductor wafer is disposed between a pair of opposite electrodes provided in an atmosphere of inert gas containing impurity gas which is held at a low pressure, a low-frequency alternating current is applied between the electrodes to induce plasma, and impurity ions are implanted into the surface of the semiconductor wafer to form a very shallow impurity diffusion layer.