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    Method of reading data in ferroelectric memory device and ferroelectric memory device
    31.
    发明授权
    Method of reading data in ferroelectric memory device and ferroelectric memory device 失效
    在铁电存储器件和铁电存储器件中读取数据的方法

    公开(公告)号：US07031180B2

    公开(公告)日：2006-04-18

    申请号：US10807355

    申请日：2004-03-24

    申请人： Junichi Karasawa ,  Takeshi Kijima ,  Eiji Natori

    发明人： Junichi Karasawa ,  Takeshi Kijima ,  Eiji Natori

    IPC分类号： G11C11/22

    CPC分类号： G11C11/22

    摘要： A method of reading data in a ferroelectric memory device includes applying a read voltage to a ferroelectric capacitor, and detecting a voltage that reflects an amount of a dynamic change in capacitance of the ferroelectric capacitor to which the read voltage is applied. Since a voltage difference ΔV occurs at a time T between the case where the polarization of a memory cell which has stored first data is not reversed and the case where the polarization of a memory cell which has stored second data is reversed, a read margin increases.

    摘要翻译： 一种在铁电存储器件中读取数据的方法包括：向铁电电容器施加读取电压，并且检测反映施加了读取电压的铁电电容器的电容的动态变化量的电压。 由于在存储了第一数据的存储单元的极化不反转的情况下，在存储第二数据的存储单元的极化反转的情况下，在时刻T发生电压差DeltaV，读取余量增加 。

    Ferroelectric memory device, method of driving the same, and driver circuit
    32.
    发明申请
    Ferroelectric memory device, method of driving the same, and driver circuit 失效
    铁电存储器件，其驱动方法和驱动电路

    公开(公告)号：US20050078507A1

    公开(公告)日：2005-04-14

    申请号：US10932890

    申请日：2004-09-02

    申请人： Yasuaki Hamada ,  Takeshi Kijima ,  Eiji Natori

    发明人： Yasuaki Hamada ,  Takeshi Kijima ,  Eiji Natori

    IPC分类号： G11C11/22

    CPC分类号： G11C11/22

    摘要： A ferroelectric memory device preventing an imprint and including a plurality of wordlines, a plurality of bitlines, a plurality of ferroelectric memory cells, a wordline driver which drives the wordlines, and a bitline driver which drives the bitlines. The wordline driver and the bitline driver switch an operation mode of the ferroelectric memory device to a first mode which is one of a data reading mode, a data rewriting mode and a data writing mode, by applying a voltage Vs having a first polarity to at least one ferroelectric memory cell selected from the ferroelectric memory cells. The wordline driver and the bitline driver switch the operation mode to a second mode in which the ferroelectric memory device prevents an imprint by applying a voltage (−Vs/3) having a second polarity which is the reverse of the first polarity to the selected ferroelectric memory cell, after the operation mode has been switched to the first mode at least once, the voltage of the second polarity causing no inversion of data stored in the ferroelectric memory cells.

    摘要翻译： 一种铁电存储器件，其防止压印并包括多个字线，多个位线，多个铁电存储器单元，驱动字线的字线驱动器和驱动位线的位线驱动器。 字线驱动器和位线驱动器通过将具有第一极性的电压Vs施加到第一模式，将铁电存储器件的操作模式切换到作为数据读取模式，数据重写模式和数据写入模式之一的第一模式 选自铁电存储单元的至少一个铁电存储单元。 字线驱动器和位线驱动器将操作模式切换到第二模式，其中铁电存储器件通过将与第一极性相反的具有第二极性的电压（-Vs / 3）施加到所选铁电体来防止压印 存储单元，在操作模式已经被切换到第一模式至少一次之后，第二极性的电压不会导致存储在铁电存储单元中的数据的反转。

    Method of forming PZT ferroelectric film
    37.
    发明授权
    Method of forming PZT ferroelectric film 有权
    形成PZT铁电薄膜的方法

    公开(公告)号：US07026169B2

    公开(公告)日：2006-04-11

    申请号：US10800722

    申请日：2004-03-16

    申请人： Takeshi Kijima ,  Yasuaki Hamada ,  Eiji Natori

    发明人： Takeshi Kijima ,  Yasuaki Hamada ,  Eiji Natori

    IPC分类号： H01L21/00

    CPC分类号： H01L21/02197 ,  C23C16/409 ,  C30B25/02 ,  C30B29/32 ,  H01L21/02271 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

    摘要： A method of forming a ferroelectric film including a complex oxide of PZT family on a metal film formed of Pt by using a metalorganic chemical vapor deposition method. At first, supply of Pb is started to form an alloy film of Pb and Pt on the metal film. Supply of Ti is then started to form an initial crystal nuclei of PbTiO3 on the alloy film. Then, supply of Zr is started to form a crystal grown layer of the complex oxide of PZT family on the initial crystal nuclei.

    摘要翻译： 通过使用金属有机化学气相沉积法在由Pt形成的金属膜上形成包含PZT族的复合氧化物的铁电体膜的方法。 首先，开始供给Pb，以在金属膜上形成Pb和Pt的合金膜。 然后开始供应Ti，以在合金膜上形成PbTiO 3 N 3的初始晶核。 然后，开始供给Zr，在初始晶核上形成PZT族的复合氧化物的结晶生长层。

    MOCVD apparatus and MOCVD method
    39.
    发明申请
    MOCVD apparatus and MOCVD method 有权
    MOCVD装置和MOCVD方法

    公开(公告)号：US20050172895A1

    公开(公告)日：2005-08-11

    申请号：US10376276

    申请日：2003-03-03

    申请人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

    发明人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

    IPC分类号： C23C16/00 ,  C23C16/44 ,  C23C16/455

    CPC分类号： C23C16/45508 ,  C23C16/455

    摘要： [Object] To provide an MOCVD apparatus and a MOCVD method which can deposit a thin film having satisfactory properties by preventing temperature decrease of a source gas. [Solving Means] An MOCVD apparatus according to the present invention is an apparatus for supplying a source gas as a mixture of an MO source gas with an oxidizing gas to a substrate 13 to thereby form a film. The MOCVD apparatus includes a substrate holder 14 for holding the substrate 13; a deposition chamber for housing the substrate holder; a supply mechanism for supplying the source gas to a surface of the substrate; and a heating device for heating the substrate 13 held by the substrate holder. The deposition chamber includes a substrate housing unit for housing the substrate holder holding the substrate, and a passage housing unit being connected to the substrate housing unit and constituting a passage for supplying the source gas to the substrate. The passage has a cross-sectional area smaller than the area of a deposition plane of the substrate 13 when the passage housing unit is cut in parallel with the deposition plane of the substrate 13.

    摘要翻译： 本发明提供一种能够通过防止源气体的温度降低而沉积具有令人满意的特性的薄膜的MOCVD装置和MOCVD方法。 本发明的MOCVD装置是将MO源气体与氧化性气体的混合物的源气体供给到基板13，从而形成膜的装置。 MOCVD装置包括用于保持基板13的基板支架14; 用于容纳衬底保持器的沉积室; 用于将源气体供给到基板的表面的供给机构; 以及用于加热由基板保持器保持的基板13的加热装置。 沉积室包括用于容纳保持基板的基板保持架的基板收纳单元，以及与基板收纳单元连接并构成用于将源气体供应到基板的通道的通道收纳单元。 当通道容纳单元与基板13的沉积平面平行地切割时，通道的横截面面积小于基板13的沉积平面的面积。