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198 条记录 (耗时 0.032 秒)

    Method for dishing reduction and feature passivation in polishing processes
    31.
    发明申请
    Method for dishing reduction and feature passivation in polishing processes 审中-公开
    抛光过程中凹陷减少和特征钝化的方法

    公开(公告)号：US20050202677A1

    公开(公告)日：2005-09-15

    申请号：US11114936

    申请日：2005-04-25

    申请人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel Carl

    发明人： Wei-Yung Hsu ,  Liang-Yuh Chen ,  Ratson Morad ,  Daniel Carl

    IPC分类号： H01L21/288 ,  H01L21/321 ,  C25C3/00

    CPC分类号： H01L21/7684 ,  H01L21/3212

    摘要： Methods and apparatus for planarizing a substrate surface are provided. In one aspect, a method is provided for planarizing a substrate surface including polishing a first conductive material to a barrier layer material, depositing a second conductive material on the first conductive material by an electrochemical deposition technique, and polishing the second conductive material and the barrier layer material to a dielectric layer. In another aspect, a processing system is provided for forming a planarized layer on a substrate, the processing system including a computer based controller configured to cause the system to polish a first conductive material to a barrier layer material, deposit a second conductive material on the first conductive material by an electrochemical deposition technique, and polish the second conductive material and the barrier layer material to a dielectric layer.

    摘要翻译： 提供了用于平坦化基板表面的方法和装置。 在一个方面，提供了一种用于平坦化衬底表面的方法，包括将第一导电材料抛光到阻挡层材料，通过电化学沉积技术在第一导电材料上沉积第二导电材料，以及抛光第二导电材料和屏障 层材料到介电层。 在另一方面，提供一种用于在衬底上形成平坦化层的处理系统，所述处理系统包括基于计算机的控制器，所述计算机控制器被配置为使所述系统将第一导电材料抛光至阻挡层材料，将第二导电材料沉积在所述第二导电材料上 通过电化学沉积技术的第一导电材料，并将第二导电材料和阻挡层材料抛光到介电层。

    Conductive pad with high abrasion
    32.
    发明申请
    Conductive pad with high abrasion 审中-公开
    高耐磨导电垫

    公开(公告)号：US20050194681A1

    公开(公告)日：2005-09-08

    申请号：US11066599

    申请日：2005-02-25

    申请人： Yongqi Hu ,  Stan Tsai ,  Martin Wohlert ,  Feng Liu ,  Liang-Yuh Chen

    发明人： Yongqi Hu ,  Stan Tsai ,  Martin Wohlert ,  Feng Liu ,  Liang-Yuh Chen

    IPC分类号： H01L23/48

    CPC分类号： B24B37/22 ,  B23H5/08 ,  H01L21/67155

    摘要： A method and apparatus for a planarizing or polishing article for Electrochemical Mechanical Planarization (ECMP) is disclosed. The polishing article is a pad assembly having a plurality of conductive domains and a plurality of abrasive domains on a processing surface. The abrasive domains and the conductive domains comprise a plurality of contact elements that are adapted to bias a semiconductor substrate while also providing abrasive qualities to enhance removal of material deposited on the substrate.

    摘要翻译： 公开了一种用于电化学机械平面化（ECMP）的平面化或抛光制品的方法和装置。 抛光制品是在处理表面上具有多个导电区域和多个磨料区域的垫组件。 研磨区域和导电区域包括适于偏置半导体衬底的多个接触元件，同时还提供磨料质量以增强沉积在衬底上的材料的去除。

    Planarization of substrates using electrochemical mechanical polishing
    35.
    发明申请
    Planarization of substrates using electrochemical mechanical polishing 审中-公开
    使用电化学机械抛光对基板进行平面化

    公开(公告)号：US20050056537A1

    公开(公告)日：2005-03-17

    申请号：US10972884

    申请日：2004-10-25

    申请人： Liang-Yuh Chen ,  Wei-Yung Hsu ,  Alain Duboust ,  Ratson Morad ,  Daniel Carl

    发明人： Liang-Yuh Chen ,  Wei-Yung Hsu ,  Alain Duboust ,  Ratson Morad ,  Daniel Carl

    IPC分类号： B24B37/00 ,  B23H5/08 ,  B24B37/04 ,  H01L21/304 ,  H01L21/316 ,  B23H5/00

    CPC分类号： B23H5/08

    摘要： A method and apparatus are provided for planarizing a material layer on a substrate. In one aspect, a method is provided for processing a substrate including forming a passivation layer on a substrate surface, polishing the substrate in an electrolyte solution, applying an anodic bias to the substrate surface, and removing material from at least a portion of the substrate surface. In another aspect, an apparatus is provided which includes a partial enclosure, polishing article, a cathode, a power source, a substrate carrier movably disposed above the polishing article, and a computer based controller to position a substrate in an electrolyte solution to form a passivation layer on a substrate surface, to polish the substrate in the electrolyte solution with the polishing article, and to apply an anodic bias to the substrate surface or polishing article to remove material from at least a portion of the substrate surface.

    摘要翻译： 提供了一种用于平坦化衬底上的材料层的方法和装置。 在一个方面，提供一种用于处理衬底的方法，包括在衬底表面上形成钝化层，在电解质溶液中抛光衬底，向衬底表面施加阳极偏压，以及从衬底的至少一部分去除材料 表面。 在另一方面，提供了一种装置，其包括部分外壳，抛光制品，阴极，电源，可移动地设置在抛光制品上方的基板载体，以及基于计算机的控制器，以将基板定位在电解质溶液中以形成 在衬底表面上的钝化层，用抛光制品抛光电解质溶液中的衬底，并将阳极偏压施加到衬底表面或抛光制品上以从衬底表面的至少一部分去除材料。

    Planarization of substrates using electrochemical mechanical polishing
    37.
    发明授权
    Planarization of substrates using electrochemical mechanical polishing 失效
    使用电化学机械抛光对基板进行平面化

    公开(公告)号：US06811680B2

    公开(公告)日：2004-11-02

    申请号：US10038066

    申请日：2002-01-03

    申请人： Liang-Yuh Chen ,  Wei-Yung Hsu ,  Alain Duboust ,  Ratson Morad ,  Daniel A. Carl

    发明人： Liang-Yuh Chen ,  Wei-Yung Hsu ,  Alain Duboust ,  Ratson Morad ,  Daniel A. Carl

    IPC分类号： B23H506

    CPC分类号： B23H5/08

    摘要： A method and apparatus are provided for planarizing a material layer on a substrate. In one aspect, a method is provided for processing a substrate including forming a passivation layer on a substrate surface, polishing the substrate in an electrolyte solution, applying an anodic bias to the substrate surface, and removing material from at least a portion of the substrate surface. In another aspect, an apparatus is provided which includes a partial enclosure, polishing article, a cathode, a power source, a substrate carrier movably disposed above the polishing article, and a computer based controller to position a substrate in an electrolyte solution to form a passivation layer on a substrate surface, to polish the substrate in the electrolyte solution with the polishing article, and to apply an anodic bias to the substrate surface or polishing article to remove material from at least a portion of the substrate surface.

    摘要翻译： 提供了一种用于平坦化衬底上的材料层的方法和装置。 在一个方面，提供一种用于处理衬底的方法，包括在衬底表面上形成钝化层，在电解质溶液中抛光衬底，向衬底表面施加阳极偏压，以及从衬底的至少一部分去除材料 表面。 在另一方面，提供了一种装置，其包括部分外壳，抛光制品，阴极，电源，可移动地设置在抛光制品上方的基板载体，以及基于计算机的控制器，以将基板定位在电解质溶液中以形成 在衬底表面上的钝化层，用抛光制品抛光电解质溶液中的衬底，并将阳极偏压施加到衬底表面或抛光制品上以从衬底表面的至少一部分去除材料。

    Low temperature integrated metallization process and apparatus
    38.
    发明授权
    Low temperature integrated metallization process and apparatus 失效

    公开(公告)号：US06743714B2

    公开(公告)日：2004-06-01

    申请号：US10074938

    申请日：2002-02-11

    申请人： Roderick Craig Mosely ,  Hong Zhang ,  Fusen Chen ,  Ted Guo ,  Liang-Yuh Chen

    发明人： Roderick Craig Mosely ,  Hong Zhang ,  Fusen Chen ,  Ted Guo ,  Liang-Yuh Chen

    IPC分类号： H01L2144

    CPC分类号： H01L21/76876 ,  C23C14/568 ,  C23C16/54 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/76879

    摘要： The present invention relates generally to an improved process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron applications. In one aspect of the invention, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A CVD metal layer is then deposited onto the refractory layer at low temperatures to provide a conformal wetting layer for a PVD metal. Next, a PVD metal is deposited onto the previously formed CVD metal layer at a temperature below that of the melting point temperature of the metal. The resulting CVD/PVD metal layer is substantially void-free. The metallization process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the metallization of the vias and contacts occurs without the formation of an oxide layer over the CVD Al layer.

    Continuous, non-agglomerated adhesion of a seed layer to a barrier layer
    39.
    发明授权
    Continuous, non-agglomerated adhesion of a seed layer to a barrier layer 有权
    种子层与阻挡层的连续的非团聚粘附

    公开(公告)号：US06627542B1

    公开(公告)日：2003-09-30

    申请号：US09604858

    申请日：2000-06-27

    申请人： Srinivas Gandikota ,  Rong Tao ,  Liang-Yuh Chen ,  Seshadri Ramaswami

    发明人： Srinivas Gandikota ,  Rong Tao ,  Liang-Yuh Chen ,  Seshadri Ramaswami

    IPC分类号： H01L2144

    CPC分类号： H01L21/76868 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089

    摘要： A method and apparatus is provided for improving adherence of metal seed layers to barrier layers in electrochemical deposition techniques. The method includes depositing an adhesion layer continuously or semi-continuously without agglomeration onto a barrier layer prior to depositing a seed layer by controlling the substrate temperature, the chamber pressure, and/or the power delivered to a deposition chamber. Deposition of the adhesion layer prevents layer delamination which leads to agglomeration of the deposited layers and formation of voids in the high aspect ratio features.

    摘要翻译： 提供了一种用于在电化学沉积技术中改善金属种子层对阻挡层的粘附性的方法和装置。 该方法包括通过控制衬底温度，室压力和/或输送到沉积室的功率沉积种子层之前将粘附层连续地或半连续地沉积在阻挡层上。 粘附层的沉积防止了层析层，导致沉积层的聚集和高纵横比特征形成空隙。