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    ATOMIC LAYER ETCH (ALE) OF TUNGSTEN OR OTHER METAL LAYERS
    31.
    发明申请
    ATOMIC LAYER ETCH (ALE) OF TUNGSTEN OR OTHER METAL LAYERS 审中-公开

    公开(公告)号：US20200312673A1

    公开(公告)日：2020-10-01

    申请号：US16802554

    申请日：2020-02-27

    Applicant: Tokyo Electron Limited

    Inventor： Yu-Hao Tsai ,  Du Zhang ,  Mingmei Wang ,  Aelan Mosden ,  Matthew Flaugh

    IPC: H01L21/3213

    Abstract: Methods for the atomic layer etch (ALE) of tungsten or other metal layers are disclosed that use in part sequential oxidation and reduction of tungsten/metal layers to achieve target etch parameters. For one embodiment, a metal layer is first oxidized to form a metal oxide layer and an underlying metal layer. The metal oxide layer is then reduced to form a surface metal layer and an underlying metal oxide layer. The surface metal layer is then removed to leave the underlying metal oxide layer and the underlying metal layer. Further, the oxidizing, reducing, and removing processes can be repeated to achieve a target etch depth. In addition, a target etch rate can also achieved for each process cycle of oxidizing, reducing, and removing.

    SELECTIVE PLASMA ETCHING OF SILICON OXIDE RELATIVE TO SILICON NITRIDE BY GAS PULSING
    32.
    发明申请
    SELECTIVE PLASMA ETCHING OF SILICON OXIDE RELATIVE TO SILICON NITRIDE BY GAS PULSING 审中-公开

    公开(公告)号：US20200234968A1

    公开(公告)日：2020-07-23

    申请号：US16739889

    申请日：2020-01-10

    Applicant: Tokyo Electron Limited

    Inventor： Du Zhang ,  Yu-Hao Tsai ,  Mingmei Wang

    IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/3213

    Abstract: A method for selective plasma etching of silicon oxide relative to silicon nitride. The method includes a) providing a substrate containing a silicon oxide film and a silicon nitride film, b) exposing the substrate to a plasma-excited treatment gas containing 1) H2 and 2) HF, F2, or both HF and F2, to form a silicon oxide surface layer with reduced oxygen content on the silicon oxide film and form an ammonium salt layer on the silicon nitride film, c) exposing the substrate to a plasma-excited halogen-containing gas that reacts with and removes the silicon oxide surface layer from the silicon oxide film, and d) repeating steps b) and c) at least once to further selectively etch the silicon oxide film relative to the ammonium salt layer on the silicon nitride film. The ammonium salt layer may be removed when the desired etching has been achieved.

    Methods for high precision plasma etching of substrates
    33.
    发明授权
    Methods for high precision plasma etching of substrates 有权

    公开(公告)号：US10483127B2

    公开(公告)日：2019-11-19

    申请号：US16200122

    申请日：2018-11-26

    Applicant: Tokyo Electron Limited

    Inventor： Mingmei Wang ,  Alok Ranjan ,  Peter L. G. Ventzek

    IPC: H01L21/3213 ,  H01J37/32 ,  H01L21/311 ,  H01L21/3065

    Abstract: A plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a combination of microwave and radio frequency (RF) power sources that may generate plasma conditions to remove monolayer(s). The system may generation a first plasma to form a thin adsorption layer on the surface of the microelectronic substrate. The adsorbed layer may be removed when the system transition to a second plasma. The differences between the first and second plasma may be include the ion energy proximate to the substrate. For example, the first plasma may have an ion energy of less than 20 eV and the second plasma may have an ion energy greater than 20 eV.

    METHOD FOR ATOMIC LAYER ETCHING
    34.
    发明申请
    METHOD FOR ATOMIC LAYER ETCHING 有权
    原子层蚀刻方法

    公开(公告)号：US20160293432A1

    公开(公告)日：2016-10-06

    申请号：US15083363

    申请日：2016-03-29

    Applicant: Tokyo Electron Limited

    Inventor： Alok Ranjan ,  Sonam Sherpa ,  Mingmei Wang

    IPC: H01L21/3065

    CPC classification number: H01L21/3065 ,  H01J37/32963

    Abstract: A method of etching a layer on a substrate includes disposing a substrate in a plasma processing system configured to facilitate an etching process, performing an atomic layer etching process cycle to etch a monolayer of an exposed surface of the substrate, and repeating the atomic layer etching process cycle until a target depth is reached. Each process cycle etches the monolayer from the exposed surface. The atomic layer etching process cycle sequentially includes forming an adsorption monolayer comprising an etchant on an exposed surface of the substrate by introducing the etchant while concurrently coupling electromagnetic power to the plasma processing system at a power level targeted to achieve an etchant radical flux at the substrate greater than a total ion flux at the substrate, which power level is less than or equal to 50 W, purging the plasma processing system to remove any excess etchant, desorbing the adsorption monolayer by exposing the adsorption monolayer to gas ions to activate a reaction of the etchant, and purging the plasma processing system again.

    Abstract translation: 蚀刻衬底上的层的方法包括将衬底设置在等离子体处理系统中，该等离子体处理系统被配置为便于蚀刻工艺，执行原子层蚀刻工艺循环以蚀刻衬底的暴露表面的单层，并重复原子层蚀刻 过程循环，直到达到目标深度。 每个处理循环都从暴露的表面刻蚀单层。 原子层蚀刻工艺循环依次包括通过引入蚀刻剂形成在衬底的暴露表面上包含蚀刻剂的吸附单层，同时以等离子体处理系统将电磁功率并入，以达到在衬底处实现蚀刻剂自由基通量的功率水平 大于基底处的总离子通量，功率水平小于或等于50W，清除等离子体处理系统以除去任何多余的蚀刻剂，通过将吸附单层暴露于气体离子来解吸吸附单层以激活反应 蚀刻剂，并再次清洗等离子体处理系统。

    METHODS FOR FORMING SEMICONDUCTOR DEVICES WITH ISOLATION STRUCTURES
    38.
    发明公开
    METHODS FOR FORMING SEMICONDUCTOR DEVICES WITH ISOLATION STRUCTURES 审中-公开

    公开(公告)号：US20240071808A1

    公开(公告)日：2024-02-29

    申请号：US17898104

    申请日：2022-08-29

    Applicant: Tokyo Electron Limited

    Inventor： Hojin Kim ,  Mingmei Wang ,  Soo Doo Chae

    IPC: H01L21/762 ,  H01L21/306

    CPC classification number: H01L21/76224 ,  H01L21/306

    Abstract: A method for forming a semiconductor device is disclosed. The method includes forming a first layer on a substrate. The method includes forming a second layer on the first layer. The substrate and the second layer have a first semiconductor material and the first layer has a second semiconductor material, and an etching selectivity is present between the first semiconductor material and the second semiconductor material. The method includes performing a first etching process to remove a portion of the second layer until the first layer is exposed, wherein the first layer is configured as an etch stop layer for the first etching process.

    Cyclic plasma etching of carbon-containing materials
    39.
    发明授权
    Cyclic plasma etching of carbon-containing materials 有权

    公开(公告)号：US11538692B2

    公开(公告)日：2022-12-27

    申请号：US17327305

    申请日：2021-05-21

    Applicant: Tokyo Electron Limited

    Inventor： Yunho Kim ,  Du Zhang ,  Shihsheng Chang ,  Mingmei Wang ,  Andrew Metz

    IPC: H01L21/311 ,  H01J37/32

    Abstract: A method for processing a substrate includes performing a cyclic process including a plurality of cycles, where the cyclic process includes: forming, in a plasma processing chamber, a passivation layer over sidewalls of a recess in a carbon-containing layer, by exposing the substrate to a first gas including boron, silicon, or aluminum, the carbon-containing layer being disposed over a substrate, purging the plasma processing chamber with a second gas including a hydrogen-containing gas, an oxygen-containing gas, or molecular nitrogen, and exposing the substrate to a plasma generated from the second gas, where each cycle of the plurality of cycles extends the recess vertically into the carbon-containing layer.

    HIGH-THROUGHPUT DRY ETCHING OF FILMS CONTAINING SILICON-OXYGEN COMPONENTS OR SILICON-NITROGEN COMPONENTS BY PROTON-MEDIATED CATALYST FORMATION
    40.
    发明申请
    HIGH-THROUGHPUT DRY ETCHING OF FILMS CONTAINING SILICON-OXYGEN COMPONENTS OR SILICON-NITROGEN COMPONENTS BY PROTON-MEDIATED CATALYST FORMATION 有权

    公开(公告)号：US20220157615A1

    公开(公告)日：2022-05-19

    申请号：US17515133

    申请日：2021-10-29

    Applicant: Tokyo Electron Limited

    Inventor： Du Zhang ,  Yu-Hao Tsai ,  Mingmei Wang

    IPC: H01L21/311

    Abstract: A method of high-throughput dry etching of a film by proton-mediated catalyst formation. The method includes providing a substrate having a film thereon containing silicon-oxygen components, silicon-nitrogen components, or both, introducing an etching gas in the process chamber, plasma-exciting the etching gas, and exposing the film to the plasma-excited etching gas to etch the film. In one example, the etching gas contains at least three different gases that include a fluorine-containing gas, a hydrogen-containing gas, and a nitrogen-containing gas, plasma-exciting the etching gas. In another example, the etching gas contains at least four different gases that include a fluorine-containing gas, a hydrogen-containing gas, an oxygen-containing gas, and a silicon-containing gas.

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