摘要:
Adverse effects due to electrostatic force between a semiconductor substrate and a movable electrode are avoided with a new structure. A movable electrode of beam structure is disposed at a specified interval above a p-type silicon substrate. Fixed electrodes, each composed of an impurity diffusion layer, are disposed on both sides of the movable electrode on the p-type silicon substrate; these fixed electrodes are self-aligningly with respect to the movable electrode. The movable electrode is displaced in accompaniment to the action of acceleration, and acceleration is detected by change (fluctuation) in current between the fixed electrodes generated by means of this displacement. Additionally, an electrode for movable electrode upward-movement use is disposed above the movable electrode, a potential difference is given between the movable electrode and the electrode for movable electrode upward-movement use, and attractive force of the movable electrode to the silicon substrate is alleviated.
摘要:
This invention aims at providing a novel semiconductor accelerometer comprising a smaller number of substrates and a production method thereof.An insulating film is formed on a main plane of a P-type silicon substrate, and a beam-like movable electrode is formed on the insulating film. Fixed electrodes are then formed on both sides of the movable electrode in self-alignment with the movable electrode by diffusing an impurity into the P-type silicon substrate, and the insulating film below the movable electrode is etched and removed. There is thus produced a semiconductor accelerometer comprising the P-type silicon substrate 1, the movable electrode 4 having the beam structure and disposed above the P-type silicon substrate 1 with a predetermined gap between them, and the fixed electrodes 8, 9 consisting of the impurity diffusion layer and formed on both sides of the movable electrode 4 on the P-type silicon substrate 1 in self-alignment with the movable electrode 4. This sensor can detect acceleration from the change (increase/decrease) of a current between the fixed electrodes 8 and 9 resulting from the displacement of the movable electrode 4 due to acceleration.
摘要:
An optical waveguide sensor includes a substrate and an optical waveguide. The optical waveguide includes a core and a lateral clad. The core extends in a spiral shape above a surface of the substrate. The lateral clad is disposed in a same layer as the core above the surface of the substrate and is in contact with either side surfaces of the core. At least a part of a surface of the core located opposite from the substrate is a transmission surface from which light leaks and is absorbed by a detected object.
摘要:
An optical waveguide sensor includes a substrate and an optical waveguide. The optical waveguide includes a core and a lateral clad. The core extends in a spiral shape above a surface of the substrate. The lateral clad is disposed in a same layer as the core above the surface of the substrate and is in contact with either side surfaces of the core. At least a part of a surface of the core located opposite from the substrate is a transmission surface from which light leaks and is absorbed by a detected object.
摘要:
A scanning apparatus includes a mirror coupled to a base via a spring portion, and a light source for emitting a beam toward a reflecting surface of the mirror so that the beam is incident thereon. The mirror reflects the beam from the light source and rotationally swings under a resilient force of the spring portion when a force is applied thereto. The reflecting surface of the mirror includes a plurality of mirror surfaces at different angles. The beam from the light source is simultaneously reflected by the mirror surfaces at different angles.
摘要:
An optical device includes: a silicon substrate; a plurality of silicon oxide columns having a rectangular plan shape; and a cavity disposed between the columns. Each column has a lower portion disposed on the substrate. Each column has a width defined as W1. The cavity has a width defined as W2. A ratio of W1/W2 becomes smaller as it goes to the lower portion of the column. A core layer provided by the columns and the cavity can have the thickness equal to or larger than a few dozen μm easily. Therefore, connection loss between a light source and the device is reduced.
摘要:
An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.
摘要:
A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.
摘要:
A flow sensor, which can detect flow velocity in a wide range including high flow velocity area with simple structure. A flow sensor includes a substrate having a hollow portion; and a thin film structure portion provided above the hollow portion. The thin film structure portion is provided with a heater formed in a center portion, an upper and a lower stream temperature detectors for detecting temperature of the fluid, a fluid thermometer for detecting temperature of the fluid, and thermal couple films provided on the substrate at a portion, where is between the heater and both temperature detectors. According to this structure, the thermal couple films enhance thermal coupling between the heater and the temperature detectors. Accordingly, it can prevent the temperature of the upper stream temperature detector from falling to around the temperature of the fluid, and it can raise a certain flow velocity at which a cooling of the low stream temperature detector due to the flowing fluid exceeds a heating by the heater. Therefore, it can detect flow velocity in a wide range including high flow velocity area.
摘要:
A semiconductor dynamic quantity sensor includes a semiconductor support substrate having a specific resistance equal to or less than 3&OHgr; cm. An insulation film is provided on the support substrate and a semiconductor layer is provided on the support substrate with the insulation film interposed therebetween. The semiconductor layer has a specific resistance equal to or less than 3&OHgr; cm. A movable electrode is provided in the semiconductor layer to be displaced according to a dynamic quantity acting thereto. A fixed electrode is fixedly provided in the semiconductor layer to make a specific gap with the movable electrode and to from a capacitor with the movable electrode. The capacitor has a capacity that changes in response to displacement of the movable electrode to detect the dynamic quantity.