-
公开(公告)号：US20110230149A1
公开(公告)日：2011-09-22
申请号：US13069379
申请日：2011-03-22
IPC分类号： H04B1/02
CPC分类号： H03F3/211 , H03F1/0205 , H03F1/0211 , H03F1/0261 , H03F3/195 , H03F3/24 , H03F2200/111 , H03F2200/393 , H03F2200/405 , H03F2200/451 , H03F2200/465 , H03F2203/21103 , H03F2203/21112 , H03F2203/21139 , H03F2203/21142 , H03F2203/21157 , H03G3/3047 , H04B2001/0416
摘要： A RF power amplifying device is constituted by a system of a balanced amplifier including first phase shifters, a first RF power amplifier, a second RF power amplifier, second phase shifters, and a power combiner. Transmitting power Pout is detected by a first power level detector connected to an output of the first RF power amplifier, a second power level detector connected to an output of the second RF power amplifier, and an adder. A level control signal from a level control circuit controls transmitting power in response to a transmitting signal with wanted power level and a detected signal of the adder.
摘要翻译： RF功率放大装置由包括第一移相器，第一RF功率放大器，第二RF功率放大器，第二移相器和功率组合器的平衡放大器的系统构成。 发射功率Pout由连接到第一RF功率放大器的输出的第一功率电平检测器，连接到第二RF功率放大器的输出的第二功率电平检测器和加法器检测。 来自电平控制电路的电平控制信号响应于具有所需功率电平的发送信号和加法器的检测信号来控制发送功率。
-
公开(公告)号：US20080125061A1
公开(公告)日：2008-05-29
申请号：US11940464
申请日：2007-11-15
CPC分类号： H03F3/211 , H03F1/0205 , H03F1/0211 , H03F1/0261 , H03F3/195 , H03F3/24 , H03F2200/111 , H03F2200/393 , H03F2200/405 , H03F2200/451 , H03F2200/465 , H03F2203/21103 , H03F2203/21112 , H03F2203/21139 , H03F2203/21142 , H03F2203/21157 , H03G3/3047 , H04B2001/0416
摘要： A RF power amplifying device is constituted by a system of a balanced amplifier including first phase shifters, a first RF power amplifier, a second RF power amplifier, second phase shifters, and a power combiner. Transmitting power Pout is detected by a first power level detector connected to an output of the first RF power amplifier, a second power level detector connected to an output of the second RF power amplifier, and an adder. A level control signal from a level control circuit controls transmitting power in response to a transmitting signal with wanted power level and a detected signal of the adder.
摘要翻译： RF功率放大装置由包括第一移相器，第一RF功率放大器，第二RF功率放大器，第二移相器和功率组合器的平衡放大器的系统构成。 发射功率Pout由连接到第一RF功率放大器的输出的第一功率电平检测器，连接到第二RF功率放大器的输出的第二功率电平检测器和加法器检测。 来自电平控制电路的电平控制信号响应于具有所需功率电平的发送信号和加法器的检测信号来控制发送功率。
-
33.发明申请Semiconductor device and a manufacturing method thereof, and semiconductor module 失效半导体装置及其制造方法以及半导体模块公开(公告)号：US20060081879A1
公开(公告)日：2006-04-20
申请号：US11247234
申请日：2005-10-12
申请人： Kenichi Tanaka , Hidetoshi Matsumoto , Isao Ohbu , Kazuhiro Mochizuki , Tomonori Tanoue , Chisaki Takubo , Hiroyuki Uchiyama
发明人： Kenichi Tanaka , Hidetoshi Matsumoto , Isao Ohbu , Kazuhiro Mochizuki , Tomonori Tanoue , Chisaki Takubo , Hiroyuki Uchiyama
IPC分类号： H01L31/109
CPC分类号： H01L23/482 , H01L24/48 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12041 , H01L2924/1305 , H01L2924/14 , H01L2924/1423 , H01L2924/16152 , H01L2924/19041 , H01L2924/30107 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device which comprises active components, passive components, wiring lines and electrodes and are satisfactory in terms of mechanical strength, miniaturization and thermal stability. In the semiconductor device, openings are formed just below active components. These openings are filled with conductor layers. Conductor layers are also formed where openings are not formed.
摘要翻译： 本发明提供一种半导体器件，其包括有源部件，无源部件，布线和电极，并且在机械强度，小型化和热稳定性方面令人满意。 在半导体器件中，开口形成在活性部件的正下方。 这些开口填充有导体层。 还形成了未形成开口的导体层。
-
公开(公告)号：US20050176380A1
公开(公告)日：2005-08-11
申请号：US11013337
申请日：2004-12-17
申请人： Hiroshi Okabe , Hidetoshi Matsumoto
发明人： Hiroshi Okabe , Hidetoshi Matsumoto
CPC分类号： H04B1/38 , H01L2224/05554 , H01L2224/48227 , H01L2224/49111 , H01L2224/49171 , H01L2924/15184 , H01L2924/15192 , H01L2924/19105 , H01L2924/30111 , H05K1/0237 , H05K1/0298 , H05K2201/093 , H05K2201/09663 , H05K2201/09972 , H01L2924/00
摘要： An RF circuit module, in which a power amplifier and a transceiver are united, with reduced interference between its electronic circuit blocks, downsized and still having high performance, and with a stable performance not dependent on the ground land structure on the motherboard, is provided. The ground plane 110 for at least a last-stage amplifier 11 of the power amplifier 10 where the greatest power is generated in the whole RF circuit block, that is, the source of generating the greatest noise and heat for the RF circuit block, is isolated from the ground plane for at least one circuit portion of the transceiver 9 including an LNA 51, receiver 52, transmitter 30, and VCO 70. These ground planes are connected to a common ground plane 480 through different connection conductors, respectively.
摘要翻译： 提供了一种RF电路模块，其中功率放大器和收发器组合在一起，其电子电路块之间的干扰减小，尺寸小且仍然具有高性能，并且具有不依赖于主板上的地面结构的稳定性能 。 在整个RF电路块中产生最大功率的功率放大器10的至少最后一级放大器11的接地平面110，即产生RF电路块的最大噪声和热的源是 与收发机9的至少一个电路部分的接地平面隔离，包括LNA 51，接收机52，发射机30和VCO70。 这些接地层分别通过不同的连接导体连接到公共接地层480。
-
35.发明授权Semiconductor device having first and second stacked semiconductor layers, with electrical contact to the first semiconductor layer 失效半导体器件具有与第一半导体层电接触的第一和第二堆叠半导体层
公开(公告)号：US5701019A
公开(公告)日：1997-12-23
申请号：US517125
申请日：1995-08-21
IPC分类号： H01L29/812 , H01L21/285 , H01L21/335 , H01L21/338 , H01L21/8254 , H01L27/06 , H01L29/778 , H01L29/80 , H01L31/0328 , H01L21/336 , H01L31/072 , H01L31/109
CPC分类号： H01L21/28587 , H01L21/8254 , H01L27/0605 , H01L29/66462 , H01L29/778 , H01L29/802
摘要： A semiconductor device (e.g., hetero-junction field-effect transistor) which has decreased capacitance between the gate and drain, and which has decreased source resistance, is provided. Structure in which a contact layer 6 comes in contact with the side surfaces of a channel layer 3 but does not come in contact with the side surfaces of a barrier layer 4 enables capacitance between the gate and drain to be decreased. This capacitance can be decreased down to 1.5 pF per 10 .mu.m of the width.
摘要翻译： 提供了具有降低的栅极和漏极之间的电容并且具有降低的源极电阻的半导体器件（例如异质结场效应晶体管）。 接触层6与沟道层3的侧表面接触但不与阻挡层4的侧表面接触的结构使栅极和漏极之间的电容减小。 该电容可以降低到每10微米宽度1.5磅/平方米。
-
公开(公告)号：US4882209A
公开(公告)日：1989-11-21
申请号：US91779
申请日：1987-09-01
IPC分类号： C03B23/13 , C03B23/047 , C03B23/207 , G02B6/38
CPC分类号： G02B6/3854 , C03B23/047 , Y10T428/13 , Y10T428/131 , Y10T428/1317 , Y10T428/1369
摘要： A method for producing a glass capillary tube, which comprises drawing under heating a multiple tube assembly comprising a plurality of glass tubes having different diameters arranged coaxially one in another and simultaneously integrating the assembly by heat fusion.
-
公开(公告)号：US08801511B2
公开(公告)日：2014-08-12
申请号：US12221189
申请日：2008-07-30
CPC分类号： B60H1/00564 , F24F13/0209
摘要： An air-conditioning duct for vehicles with one duct mutually connected and fixed to the other duct is provided. One duct is formed by incorporating a first unit duct with a flange formed around an opening periphery thereof and a second unit duct with a flange formed around an opening periphery thereof in parallel. The other duct is formed by incorporating a third unit duct with a flange formed around an opening periphery thereof and a fourth unit duct with a flange formed around an opening periphery thereof in parallel. The flange formed on the boundary side of the second unit duct are fixed with one over another, and the flange formed on the boundary side of the third unit duct and the flange formed on the boundary side of the fourth unit duct are fixed with one over another.
摘要翻译： 提供了一种用于具有相互连接并固定到另一个管道的一个管道的车辆的空调管道。 一个管道通过将第一单元管道与其开口周围形成的凸缘并入第二单元管道而形成，该第二单元管道具有围绕其开口周边平行形成的凸缘。 另一个管道通过将第三单元管道与其开口周围形成的凸缘并入第四单元管道而形成，该第四单元管道具有围绕其开口周边平行形成的凸缘。 形成在第二单元导管的边界侧的凸缘彼此固定，形成在第三单元导管的边界侧的凸缘和形成在第四单元导管的边界侧的凸缘固定在一个 另一个。
-
公开(公告)号：US20090042503A1
公开(公告)日：2009-02-12
申请号：US12221189
申请日：2008-07-30
IPC分类号： B60H3/00
CPC分类号： B60H1/00564 , F24F13/0209
摘要： An air-conditioning duct for vehicles with one duct mutually connected and fixed to other duct, wherein one duct is formed by incorporating a first unit duct with a flange formed around an opening periphery thereof and a second unit duct with a flange formed around an opening periphery thereof in parallel, other duct is formed by incorporating a third unit duct with a flange formed around an opening periphery thereof and a fourth unit duct with a flange formed around an opening periphery thereof in parallel, the flange formed on the a boundary side of the first unit duct and the flange formed on the boundary side of the second unit duct are fixed with one over another, and the flange formed on the boundary side of the third unit duct and the flange formed on the boundary side of the fourth unit duct are fixed with one over another.
摘要翻译： 一种用于具有相互连接并固定到其他管道的一个管道的车辆的空调管道，其中一个管道通过将第一单元管道与其开口周边周围形成的凸缘结合而形成，第二单元管道具有围绕开口形成的凸缘 其周边平行地形成有另一个管道，该第三单元管道具有围绕其开口周边形成的凸缘，第四单元管道具有平行于其开口周边形成的凸缘，所述凸缘形成在边界的边界上 形成在第二单元导管的边界侧的第一单元导管和凸缘彼此固定，并且形成在第三单元导管的边界侧上的凸缘和形成在第四单元导管的边界侧上的凸缘 被固定在一个另一个。
-
公开(公告)号：US07276744B2
公开(公告)日：2007-10-02
申请号：US11316908
申请日：2005-12-27
申请人： Kenichi Tanaka , Tomonori Tanoue , Hidetoshi Matsumoto , Hiroshi Ohta , Kazuhiro Mochizuki , Hiroyuki Uchiyama
发明人： Kenichi Tanaka , Tomonori Tanoue , Hidetoshi Matsumoto , Hiroshi Ohta , Kazuhiro Mochizuki , Hiroyuki Uchiyama
IPC分类号： H01L29/33 , H01L31/109
CPC分类号： H01L29/7371 , H01L29/66318
摘要： This invention is intended to provide an HBT capable of achieving, if the HBT is a collector-up HBT, the constriction of the emitter layer disposed directly under an external base layer, and reduction in base-emitter junction capacity, or if the HBT is an emitter-up HBT, reduction in base-collector junction capacity. For the collector-up HBT, window structures around the sidewalls of a collector are used to etch either the emitter layer disposed directly under the external base layer, or an emitter contact layer For the emitter-up HBT, window structures around the sidewalls of an emitter are used to etch either the collector layer disposed directly under the external base layer, or a collector contact layer. In both HBTs, the external base layer is supported by a columnar structure to ensure mechanical strength.
摘要翻译： 本发明旨在提供一种如果HBT是集电极HBT，则可以实现直接位于外部基极层下方的发射极层的收缩，以及基极 - 发射极结能量的降低，或HBT为 发射极HBT，基极 - 集电极结电容降低。 对于收集器HBT，围绕集电极侧壁的窗口结构用于蚀刻直接位于外部基极层下方的发射极层或发射极接触层。对于发射极上升HBT，围绕侧壁的窗口结构 发射极用于蚀刻直接位于外部基底层下方的集电极层或集电极接触层。 在两个HBT中，外部基层由柱状结构支撑以确保机械强度。
-
40.发明授权Method for manufacturing fine pattern, and color filter, shading pattern filter and color LCD element formed and printed board by using the same 失效用于制造精细图案的方法，彩色滤光片，阴影图案滤光片和彩色LCD元件的形成和使用它们的印刷电路板
公开(公告)号：US6162569A
公开(公告)日：2000-12-19
申请号：US165129
申请日：1998-10-02
CPC分类号： H05K3/0079 , G02F1/133512 , G02F1/133516 , H05K3/061 , H05K3/108 , H05K2203/0117 , H05K2203/0537 , H05K2203/135
摘要： A method for manufacturing a fine pattern includes steps of forming a master substrate having an electrode layer patterned to a predetermined shape, forming peel layers made of a conductive water-repellent thin film on the master substrate, forming the fine pattern made of the electrodeposit resin on the peel layers, impregnating the electrodeposit resin with water, and stripping the fine pattern off the master substrate and transferring the fine pattern on a bonding layer of the media substrate. A color filter and a shading pattern filter are manufactured by the method for manufacturing the fine pattern. The color LCD element includes plastic film substrates, a transparent pixel electrode, a liquid crystal material, and color filters. The color filters are pasted on the plastic film with a bonding film laid therebetween. The color LCD element includes fine emittable filters two-dimensionally created as the color filter on a light-transmissive substrate so that the emittable filter is composed to seal at least one kind of the light-storage and the fluorescent coloring particles in the electrodeposit resin layer.
摘要翻译： 一种精细图案的制造方法包括以下步骤：形成具有图案化为规定形状的电极层的母基板，在母基板上形成由导电性疏水性薄膜构成的剥离层，形成由电沉积树脂 在剥离层上，用水浸渍电沉积树脂，并将精细图案从母基板上剥离并将精细图案转印到介质基板的粘合层上。 通过精细图案的制造方法制造滤色器和遮光图案过滤器。 彩色LCD元件包括塑料薄膜基板，透明像素电极，液晶材料和滤色器。 将滤色片粘贴在塑料薄膜上，并将粘合薄膜铺在其间。 彩色LCD元件包括在透光性基板上二维地形成作为滤色器的精细的可发射滤光片，使得可发射滤光片被构成以密封电沉积树脂层中的至少一种储光和荧光着色颗粒 。
-
-
-
-
-
-
-
-
-
搜索结果
64 条记录 (耗时 0.03 秒)
