Mixed temperature deposition of thin film silicon tandem cells
    37.
    发明授权
    Mixed temperature deposition of thin film silicon tandem cells 有权
    薄膜硅串联电池的混合温度沉积

    公开(公告)号:US08859321B2

    公开(公告)日:2014-10-14

    申请号:US13017671

    申请日:2011-01-31

    摘要: Fabrication of a tandem photovoltaic device includes forming a bottom cell having an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. A top cell is formed relative to the bottom cell. The top cell has an N-type layer, a P-type layer and a top intrinsic layer therebetween. The top intrinsic layer is formed of an undoped material deposited at a temperature that is different from the bottom intrinsic layer such that band gap energies for the top intrinsic layer and the bottom intrinsic layer are progressively lower for each cell.

    摘要翻译: 串联光伏器件的制造包括在其间形成具有N型层,P型层和底部本征层的底部电池。 相对于底部单元形成顶部单元。 顶部单元具有N型层,P型层和顶层本征层。 顶部本征层由在不同于底部本征层的温度沉积的未掺杂材料形成,使得顶部本征层和底部本征层的带隙能量对于每个单元而言逐渐降低。