公开(公告)号：US20130237065A1

公开(公告)日：2013-09-12

申请号：US13773222

申请日：2013-02-21

Applicant: SYNOS TECHNOLOGY, INC.

Inventor： Sang In Lee ,  Ilsong Lee ,  Hyo Seok Yang

IPC: H01L21/02

CPC classification number: H01L21/322 ,  C23C16/308 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45591 ,  C23C16/50 ,  H01J37/32357 ,  H01J37/32623 ,  H01L21/02178 ,  H01L21/02274 ,  H01L21/0228

Abstract: Placing a conductive member between a plasma chamber in a remote plasma reactor and a substrate to shield the substrate from irradiation of undesirable electromagnetic radiation, ions or electrons. The conductive member blocks the electromagnetic radiation, neutralizes ions and absorbs the electrons. Radicals generated in the plasma chambers flows to the substrate despite the placement of the conductive member. In this way, the substrate is exposed to the radicals whereas damages to the substrate due to electromagnetic radiations, ions or electrons are reduced or removed.

Abstract translation: 将导电构件放置在远程等离子体反应器中的等离子体室和基板之间，以屏蔽基板免受不需要的电磁辐射，离子或电子的照射。 导电构件阻挡电磁辐射，中和离子并吸收电子。 在等离子体室中产生的自由基流过衬底，尽管导电构件的放置。 以这种方式，衬底暴露于自由基，同时减少或去除由电磁辐射，离子或电子引起的对衬底的损伤。

公开(公告)号：US20120302071A1

公开(公告)日：2012-11-29

申请号：US13572555

申请日：2012-08-10

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L21/31

CPC classification number: H01L21/76224 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/0262 ,  H01L21/3141 ,  H01L21/31604

Abstract: A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.

Abstract translation: 通过在具有凹部的基板上形成第一材料层来制造基板结构，使用与第一材料反应的第二材料从基板的除了凹部的部分除去第一材料层，并从 所述第一材料层使用与所述第一材料反应的第三材料。 制造器件的方法可以包括形成衬底结构的方法。

公开(公告)号：US20120301632A1

公开(公告)日：2012-11-29

申请号：US13563611

申请日：2012-07-31

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/50

CPC classification number: C23C16/45538 ,  C23C16/06 ,  C23C16/34 ,  C23C16/45517 ,  C23C16/45523 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/50 ,  C23C16/545

Abstract: A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.

Abstract translation: 使用由等离子体产生的自由基形成薄膜的方法可包括使用等离子体产生反应物前体的自由基; 通过将衬底暴露于反应物前体的自由基和源前体的混合物，在衬底上形成第一薄膜; 将基底暴露于源前体; 以及通过将所述衬底暴露于所述反应物前体和所述源前体的自由基的混合物而在所述衬底上形成第二薄膜。 由于在第一薄膜的形成和第二薄膜的形成之间将基板暴露于源极前体，因此可以提高沉积速率。

公开(公告)号：US08257799B2

公开(公告)日：2012-09-04

申请号：US12709763

申请日：2010-02-22

Applicant: Sang In Lee

Inventor： Sang In Lee

IPC: H05H1/24 ,  C23C16/00

CPC classification number: C23C16/45538 ,  C23C16/06 ,  C23C16/34 ,  C23C16/45517 ,  C23C16/45523 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/50 ,  C23C16/545

Abstract: A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.

Abstract translation: 使用由等离子体产生的自由基形成薄膜的方法可包括使用等离子体产生反应物前体的自由基; 通过将衬底暴露于反应物前体的自由基和源前体的混合物，在衬底上形成第一薄膜; 将基底暴露于源前体; 以及通过将所述衬底暴露于所述反应物前体和所述源前体的自由基的混合物而在所述衬底上形成第二薄膜。 由于在第一薄膜的形成和第二薄膜的形成之间将基板暴露于源极前体，因此可以提高沉积速率。

公开(公告)号：US20120213947A1

公开(公告)日：2012-08-23

申请号：US13372290

申请日：2012-02-13

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/44 ,  H05H1/24 ,  C23C16/04

CPC classification number: C23C16/045 ,  C23C16/403 ,  C23C16/45551

Abstract: Embodiments relate to depositing a layer of material on a permeable substrate by passing the permeable substrate between a set of reactors. The reactors may inject source precursor, reactant precursor, purge gas or a combination thereof onto the permeable substrate as the permeable substrate passes between the reactors. Part of the gas injected by a reactor penetrates the permeable substrate and is discharged by the other reactor. The remaining gas injected by the reactor moves in parallel to the surface of the permeable substrate and is discharged via an exhaust portion formed on the same reactor.

Abstract translation: 实施例涉及通过在一组反应器之间通过可渗透基底将一层材料沉积在可渗透基底上。 当可渗透的基底通过反应器之前，反应器可将源前体，反应物前体，吹扫气体或其组合注入到可渗透基底上。 由反应器注入的气体的一部分穿透可渗透的基底并被另一个反应器排出。 由反应器喷射的剩余气体平行于可渗透基底的表面移动，并经由形成在同一反应器上的排气部排出。

公开(公告)号：US20120207948A1

公开(公告)日：2012-08-16

申请号：US13369717

申请日：2012-02-09

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/455 ,  C23C16/50

CPC classification number: C23C16/513 ,  C23C16/308 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45542 ,  C23C16/45551

Abstract: Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate.

Abstract translation: 使用氮化合物的混合物的自由基进行原子层沉积（ALD），以增加沉积在基底上的层的沉积速率。 将氮化合物气体的混合物注入自由基反应器中。 通过在自由基反应器中的两个电极上施加电压以产生氮化合物气体的自由基来产生复合气体的等离子体。 将基团注入预先注入源前体的基底的表面上。 该基团用作反应物前体并在衬底上沉积一层材料。

公开(公告)号：US20120125258A1

公开(公告)日：2012-05-24

申请号：US13295012

申请日：2011-11-11

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/50

CPC classification number: C23C16/45551 ,  C23C16/45536 ,  H01J37/32376 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/32752 ,  H01J37/32807

Abstract: An elongated reactor assembly in a deposition device for performing atomic layer deposition (ALD) on a large substrate. The elongated reactor assembly includes one or more injectors and/or radical reactors. Each injector or radical reactor injects a gas or radicals onto the substrate as the substrate passes the injector or radical reactor as part of the ALD process. Each injector or radical reactor includes a plurality of sections where at least two sections have different cross sectional configurations. By providing different sections in the injector or radical reactor, the injector or radical reactor may inject the gas or the radicals more uniformly over the substrate. Each injector or radical reactor may include more than one outlet for discharging excess gas or radicals outside the deposition device.

Abstract translation: 用于在大型衬底上进行原子层沉积（ALD）的沉积装置中的细长反应器组件。 细长的反应器组件包括一个或多个注射器和/或自由基反应器。 当基板作为ALD过程的一部分通过注射器或自由基反应器时，每个注射器或自由基反应器将气体或自由基注入到基底上。 每个喷射器或自由基反应器包括多个部分，其中至少两个部分具有不同的横截面构造。 通过在注射器或自由基反应器中提供不同的部分，注射器或自由基反应器可以将气体或自由基更均匀地注入基底上。 每个注射器或自由基反应器可以包括用于排出沉积装置外部的多余气体或自由基的多于一个的出口。

公开(公告)号：US20120094149A1

公开(公告)日：2012-04-19

申请号：US13273076

申请日：2011-10-13

Applicant: Sang In Lee ,  Chang Wan Hwang

Inventor： Sang In Lee ,  Chang Wan Hwang

IPC: C23C16/18 ,  B32B9/04

CPC classification number: C23C16/45551 ,  C23C16/403 ,  C23C16/45536

Abstract: Atomic layer deposition is performed by reciprocating a susceptor in two directions, subjecting a substrate on the susceptor to two different sequences of processes. By subjecting the susceptor to different sequences of processes, the substrate undergoes different processes that otherwise would have required an additional set of injectors or reactors. The reduced number of injectors or reactors enables a more compact deposition device, and reduces the cost associated with the deposition device.

Abstract translation: 通过使感受器沿两个方向往复移动来进行原子层沉积，对基座上的基底进行两个不同的处理顺序。 通过对基座进行不同的工艺顺序，衬底经历不同的工艺，否则将需要额外的一组注射器或反应器。 减少注射器或反应器的数量使得能够实现更紧凑的沉积装置，并降低与沉积装置相关的成本。

公开(公告)号：US20120027953A1

公开(公告)日：2012-02-02

申请号：US13190104

申请日：2011-07-25

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/455 ,  C23C16/50

CPC classification number: C23C16/45551 ,  C23C16/45536 ,  C23C16/54

Abstract: A rotating reactor assembly includes an injector rotor comprising a channel extending in a direction parallel to a rotational axis of the injector rotor and at least one injection hole connected to the channel; and an intake port through which a material is introduced. As the injector rotor rotates, the channel is timely and/or periodically connected to the intake port such that the material is injected to a substrate through the at least one injection hole.

Abstract translation: 旋转反应器组件包括喷射器转子，其包括在平行于喷射器转子的旋转轴线的方向上延伸的通道和连接到通道的至少一个喷射孔; 以及引入材料的进气口。 当喷射器转子旋转时，通道及时地和/或周期性地连接到进气口，使得材料通过至少一个喷射孔喷射到基底。

公开(公告)号：US20100215871A1

公开(公告)日：2010-08-26

申请号：US12709763

申请日：2010-02-22

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/50

CPC classification number: C23C16/45538 ,  C23C16/06 ,  C23C16/34 ,  C23C16/45517 ,  C23C16/45523 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/50 ,  C23C16/545

Abstract: A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.

Abstract translation: 使用由等离子体产生的自由基形成薄膜的方法可包括使用等离子体产生反应物前体的自由基; 通过将衬底暴露于反应物前体的自由基和源前体的混合物，在衬底上形成第一薄膜; 将基底暴露于源前体; 以及通过将所述衬底暴露于所述反应物前体和所述源前体的自由基的混合物而在所述衬底上形成第二薄膜。 由于在第一薄膜的形成和第二薄膜的形成之间将基板暴露于源极前体，因此可以提高沉积速率。