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    SENSOR INTERFACE
    31.
    发明申请
    SENSOR INTERFACE 有权
    传感器接口

    公开(公告)号：US20070255509A1

    公开(公告)日：2007-11-01

    申请号：US11615341

    申请日：2006-12-22

    Applicant: William LeFebvre ,  Michael J. McCann ,  Frank Backo ,  Andrew H. Martin

    Inventor： William LeFebvre ,  Michael J. McCann ,  Frank Backo ,  Andrew H. Martin

    IPC: G01B3/00

    CPC classification number: G01D21/02 ,  B61F5/305 ,  B61F5/32 ,  B61L15/0027 ,  B61L15/0081 ,  B61L27/0094 ,  F16C41/007 ,  F16C41/008 ,  F16C2326/10 ,  G01D11/245 ,  G01G19/12 ,  G01G23/3728 ,  G01L1/183 ,  G01L5/0085 ,  G01L5/107 ,  G01L5/243 ,  G01L5/28 ,  G01L9/0022

    Abstract: A sensor interface is disclosed including a flexible substrate in which are embedded sensors for measuring physical parameters such as temperature, displacement, velocity, acceleration, stress, strain, pressure and force present between objects such as a railcar bearing and a truck side frame. The substrate is positioned between the objects of interest Electronic components such as a data processing unit, a data storage device, a communication device and a power source may also be embedded within the substrate. The electronic devices communicate with one another and the sensors to process signals generated by the sensors indicative of the parameters being measured.

    Abstract translation: 公开了一种传感器接口，其包括柔性基板，其中嵌入有传感器，用于测量诸如轨道车轴承和卡车侧框架之类的物体之间的物理参数，例如温度，位移，速度，加速度，应力，应变，压力和力。 衬底位于感兴趣的对象之间也可以嵌入在衬底内的电子部件，例如数据处理单元，数据存储设备，通信设备和电源。 电子设备彼此通信，并且传感器处理由传感器产生的指示所测量的参数的信号。

    Resonating structure and method for forming the resonating structure
    35.
    发明授权
    Resonating structure and method for forming the resonating structure 失效
    用于形成谐振结构的谐振结构和方法

    公开(公告)号：US6021675A

    公开(公告)日：2000-02-08

    申请号：US807968

    申请日：1997-02-28

    Applicant: James D. Seefeldt ,  Michael F. Mattes

    Inventor： James D. Seefeldt ,  Michael F. Mattes

    IPC: G01L1/10 ,  B81B3/00 ,  G01L1/18 ,  G01L9/00 ,  G01P15/08 ,  G01P15/12 ,  H01L29/84 ,  G01B7/16

    CPC classification number: G01L9/0042 ,  G01L1/183 ,  G01L9/0019 ,  G01L9/0055 ,  G01P15/0802 ,  G01P15/123

    Abstract: A force transducer having a semiconductor substrate including a surface defining a recess, such that the recess has a peripheral boundary and a flexible diaphragm connected to the surface along the peripheral boundary to enclose the recess so that the diaphragm moves in response to changes in a force applied thereto. The force transducer also includes a resonant beam connected to the surface adjacent the peripheral boundary. The resonant beam has a frequency of resonation. Movement of the diaphragm in response to changes in the force applied to the diaphragm changes the frequency of resonation of the resonant beam.

    Abstract translation: 一种力传感器，其具有包括限定凹部的表面的半导体衬底，使得所述凹部具有外围边界，并且柔性隔膜沿着周边边界连接到所述表面以包围所述凹部，使得所述隔膜响应于力的变化而移动 应用于此。 力传感器还包括连接到邻近外围边界的表面的谐振束。 谐振光束具有谐振频率。 响应于施加到隔膜的力的变化，隔膜的移动改变谐振梁的谐振频率。

    Integrated resonant microbeam sensor and transistor oscillator
    36.
    发明授权
    Integrated resonant microbeam sensor and transistor oscillator 失效
    集成谐振微束传感器和晶体管振荡器

    公开(公告)号：US5550516A

    公开(公告)日：1996-08-27

    申请号：US357943

    申请日：1994-12-16

    Applicant: David W. Burns ,  J. David Zook

    Inventor： David W. Burns ,  J. David Zook

    IPC: G01L1/10 ,  G01L1/14 ,  G01L1/18 ,  G01L9/00 ,  G01P15/097 ,  G01P15/10 ,  H03H9/24 ,  H03B5/30

    CPC classification number: G01P15/097 ,  G01L1/183 ,  G01L9/0019

    Abstract: At least one microbeam situated on a substrate, having a resonant frequency dependent on the strain on the microbeam which may be affected by the bending of the substrate. The beam or beams have sense and drive electrodes proximate to the beam or beams and form capacitors with a beam being the other electrode. The capacitance varies as the beam moves in vibration. The sense electrode is connected to an input of a transistor, such as the gate or base, and the drive electrode is connected to an output of the transistor. The transistor has a load impedance with a capacitive component to aid in the sustaining of vibration of the beam at a resonant frequency. A high ohm resistor is connected between the gate and the drain of the transistor to appropriately bias the gate. The bending of the substrate may be caused by a magnitude of a physical stimulus being measured. However, the bending of the substrate is not utilized nor desired in the filter and temperature sensing configurations of the invention. The frequency of resonance is an indication of the magnitude of the physical parameter. Variants of the sensor may be implemented with different placements of the sense and drive electrodes, and additional electronics as needed to implement the various configurations and microbeam geometry. Additional sense and/or drive electrodes and beams also may be incorporated in the transistor resonant microbeam sensor.

    Abstract translation: 位于衬底上的至少一根微束，具有取决于微束上的应变的共振频率，其可能受到衬底的弯曲的影响。 光束或光束具有靠近光束或光束的感测和驱动电极，并形成具有作为另一电极的光束的电容器。 电容随着光束在振动中的移动而变化。 感测电极连接到诸如栅极或基底的晶体管的输入，并且驱动电极连接到晶体管的输出端。 晶体管具有具有电容分量的负载阻抗，以有助于以共振频率维持波束的振动。 一个高欧姆电阻连接在晶体管的栅极和漏极之间以适当地偏置栅极。 衬底的弯曲可以由被测量的物理刺激的大小引起。 然而，在本发明的过滤器和温度检测结构中，基板的弯曲不被利用或不期望。 谐振频率表示物理参数的大小。 传感器的变体可以通过传感电极和驱动电极的不同布置以及实现各种构造和微束几何所需的附加电子装置来实现。 附加的感测和/或驱动电极和光束也可以并入晶体管谐振微束传感器中。

    Vibratory transducer
    38.
    发明授权
    Vibratory transducer 失效
    振动传感器

    公开(公告)号：US4841775A

    公开(公告)日：1989-06-27

    申请号：US145156

    申请日：1988-01-19

    Applicant: Kyoichi Ikeda ,  Tetsuya Watanabe ,  Yasushi Higashino

    Inventor： Kyoichi Ikeda ,  Tetsuya Watanabe ,  Yasushi Higashino

    IPC: G01D5/243 ,  G01L1/10 ,  G01L1/16 ,  G01L1/18 ,  G01L9/00 ,  G01N9/00 ,  G01N35/00 ,  G01P15/08 ,  G01P15/097 ,  G01P15/10 ,  H01L21/60 ,  H04R17/08

    CPC classification number: H01L21/76897 ,  G01D5/243 ,  G01L1/162 ,  G01L1/183 ,  G01L1/186 ,  G01L9/0019 ,  G01L9/002 ,  G01L9/0022 ,  G01L9/0023 ,  G01N9/002 ,  G01P15/0802 ,  G01P15/097 ,  G01N2035/00237 ,  H01L2924/3011 ,  H04R17/08

    Abstract: A vibratory transducer comprising a vibratory beam composed of an n-type layer and having at least one end fixed. The vibratory beam is formed by selectively etching an n-type layer formed by adding impurities locally to a single silicon crystal. The vibratory transducer also comprises means for vibrating the vibratory beam and means for detecting vibration of the vibratory beam. The vibratory transducer measures pressure, temperature, density, etc, by detecting change in the resonant frequency of the vibratory beam. The vibratory beam can be finely etched irrespective of the density of the impurities therein by forming the vibratory beam in an alkaline aqueous solution while applying a negative DC or pulsed voltage to a p-type layer and a positive DC or pulsed voltage to an n-type layer. The vibrating and detecting means for the vibratory beam can be easily provided by making a diode and a transistor including the vibratory beam in the transducer.

    Abstract translation: 一种振动换能器，包括由n型层组成并且至少一端固定的振动梁。 通过选择性地蚀刻通过将杂质局部添加到单个硅晶体而形成的n型层来形成振动束。 振动换能器还包括用于振动振动梁的装置和用于检测振动梁的振动的装置。 振动传感器通过检测振动梁的共振频率的变化来测量压力，温度，密度等。 通过在碱性水溶液中形成振动束，同时向p型层施加负的DC或脉冲电压，并向正极直流或脉冲电压施加负的DC或脉冲电压，可以精细地蚀刻振动束，而不管其中的杂质的密度如何。 类型层。 用于振动束的振动和检测装置可以通过在换能器中制造包括振动束的二极管和晶体管来容易地提供。

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