Abstract:
An apparatus for coating substrates with a coating material is disclosed. The apparatus includes a frame, a crucible arrangement including a first crucible and a second crucible disposed offset from one another in a horizontal plane, where the crucible arrangement is disposed on the frame. At least one first shaft is associated with the first crucible and at least one second shaft is associated with the second crucible, where the at least one first and second shafts are disposed in the frame beneath the first and second crucibles, respectively. A first lifting device is associated with the at least one first shaft and a second lifting device is associated with the at least one second shaft, where the first and second lifting devices are disposed in the frame. The frame is linearly displaceable in the horizontal plane.
Abstract:
A vaporizing device is provided, wherein an elongated pot having material to be vaporized is impinged upon by an electron beam, preferably via several electron guns. Each electron gun is responsible for a certain section of the pot. The electron beam is guided over the melt in a pendular manner. For this purpose, a first magnetic deflecting unit is provided, which produces a variable parallel displacement of the electron beam. In order to achieve this, two magnetic fields are provided, the magnetic field boundaries of which form a type of lens system, wherein the outlet side of the first magnetic field is convex and the inlet side of the second magnetic field is concave. In order to deflect the electron beam into the pot, a second magnetic deflecting unit is provided, the magnetic field of which can be moved synchronously with the beam displacement parallel to the pot.
Abstract:
An electron beam vapor deposition apparatus includes a coating chamber including a coating zone for depositing a coating on a work piece. A coating device includes at least one crucible for presenting at least one source coating material. The coating device includes a first deposition mode of depositing the at least one source coating material and a second deposition mode of depositing the at least one source coating material. At least one electron beam source evaporates the at least one source coating material for deposit onto the work piece. A controller is configured to control a speed of movement of the work piece in the coating zone during the coating operation in response to the first deposition mode and the second deposition mode.
Abstract:
Disclosed herein are systems and methods for in-situ measurement of impurities on metal slugs utilized in electron-beam metal evaporation/deposition systems, and for increasing the production yield of a semiconductor manufacturing processes utilizing electron-beam metal evaporation/deposition systems. A voltage and/or a current level on an electrode disposed in a deposition chamber of an electron-beam metal evaporation/deposition system is monitored and used to measure contamination of the metal slug. Should the voltage or current reach a certain level, the deposition is completed and the system is inspected for contamination.
Abstract:
The present invention relates to a ceramic coating and ion beam mixing apparatus for improving corrosion resistance, and a method of reforming an interface between a coating material and a base material. In samples fabricated using the coating and ion beam mixing apparatus, adhesiveness is improved, and the base material is reinforced, thereby improving resistance to thermal stress at high temperatures and high-temperature corrosion resistance of a material to be used in a sulfuric acid decomposition apparatus for producing hydrogen.
Abstract:
A method of vapor depositing a vapor deposition substance onto substrates within a vacuum vessel includes holding the substrates with a dome shaped holder disposed within the vacuum vessel, rotating the dome shaped holder, vapor depositing a substance from a vapor deposition source disposed oppositely to the substrates, supplying ions from an ion source to the substrates, and supplying neutralizing electrons from a neutralizer to the substrates.
Abstract:
An optical thin-film vapor deposition apparatus and method are capable of producing an optical thin-film by vapor depositing a vapor deposition substance onto substrates (14) within a vacuum vessel (10). A dome shaped holder (12) is disposed within the vacuum vessel (10) and holds the substrates (14). A drive rotates the dome shaped holder (12). A vapor depositing source (34) is disposed oppositely to the substrates (14). An ion source (38) irradiates ions to the substrates (14). A neutralizer (40) irradiates electrons to the substrates (14). The ion source (38) is disposed at an angle between an axis, along which ions are irradiated from the ion source (38), and a line perpendicular to a surface of each of the substrates (14). The angle is between 8° inclusive and 40° inclusive. A ratio of a distance in a vertical direction between (i) a center of rotational axis of the dome shaped holder (12), and (ii) a center of the ion source (38), relative to a diameter of the dome shaped holder (12), is between 0.5 inclusive and 1.2 inclusive.
Abstract:
The cross section of a beam is flattened by causing a plasma beam (25) extracted by a convergence coil from a plasma gun to pass through the magnetic field that extends to the direction orthogonal to the direction in which the plasma beam travels and is formed by magnets (27) made of permanent magnets which are oppositely arranged in pairs in parallel with each other. A plasma apparatus is provided using a plasma beam with 0.7≦Wi/Wt with a half-value of beam intensity with respect to a width Wt of a flattened beam 28 as Wi. At least one magnet is included which is stronger in intensity of a repulsive magnetic field at the center of the beam.
Abstract translation:通过使来自等离子体枪的会聚线圈提取的等离子体束(25)通过延伸到与等离子体束行进的方向正交的方向的磁场而使束的横截面平坦化,并且由 由永久磁铁制成的磁体(27)彼此成对平行配置。 使用具有0.7 <= Wi / Wt的等离子体束提供等离子体装置,其中光束强度的一半值相对于扁平光束28的宽度Wt为Wi。 包括至少一个磁体,其在梁的中心处的排斥磁场的强度更强。
Abstract:
An electron beam physical vapor deposition (EBPVD) apparatus and a method for using the apparatus to produce a coating material (e.g., a ceramic thermal barrier coating) on an article. The EBPVD apparatus generally includes a coating chamber that is operable at elevated temperatures and subatmospheric pressures. An electron beam gun projects an electron beam into the coating chamber and onto a coating material within the chamber, causing the coating material to melt and evaporate. An article is supported within the coating chamber so that vapors of the coating material deposit on the article. The operation of the EBPVD apparatus is enhanced by the shape and intensity of the electron beam pattern on the coating material and on a crucible containing the molten coating material.
Abstract:
The object of this invention is to realize the new configuration of antenna and the electric power feeding method which substantially suppress the generation of standing wave and consequently to provide a discharge apparatus to generate plasma having an excellent uniformity, a plasma processing method for large-area substrate, and a solar cell manufactured with a high productivity. The present invention is composed of a plurality of U-shaped antenna elements having a power feeding end and a grounded end which are arranged to form an array antenna in such a way that the grounded end and the power feeding end are alternately placed in parallel at regular intervals on a plane, wherein the alternating current electric powers with the same excitation frequency are simultaneously fed to the power feeding ends with the phase shift of 180 degrees between adjacent power feeding ends, the excitation frequency of the alternating current power is 10 MHz-2 GHz, and the length of the conductor is set so that the measured ratio of reflected wave to incident wave is 0.1 or less at the power feeding end. It is also possible to determine the length La of straight conductor to hold the inequality: 0.5(1/α)