公开(公告)号：US5415728A

公开(公告)日：1995-05-16

申请号：US004413

申请日：1993-01-14

Applicant: Makoto Hasegawa ,  Atsuo Sanda

Inventor： Makoto Hasegawa ,  Atsuo Sanda

IPC: C23F4/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213

CPC classification number: H01L21/67069 ,  H01J37/3244 ,  H01L21/32137 ,  H01J2237/3343 ,  Y10S438/941

Abstract: Disclosed herein are a dry etching method and a dry etching apparatus. The method comprises a step of applying an etching inhibiting gas to that portion of a workpiece where etching speed is high, while the workpiece is being etched with reactive-gas plasma. The apparatus comprises functions for holding a reactive etching gas, a first electrode located within the gas-holding functions, for supporting a workpiece, a second electrode located within the gas-holding functions and spaced apart from the first electrode by a predetermined distance, functions for supplying high-frequency power, thereby to convert the reactive etching gas into a plasma in the space between the first and second electrodes, and functions for supplying an etching inhibiting gas to that portion of the workpiece where etching speed is high.

Abstract translation: 这里公开了干蚀刻方法和干蚀刻装置。 该方法包括在用反应气体等离子体蚀刻工件的同时，将蚀刻抑制气体施加到蚀刻速度高的工件的那部分。 该装置包括用于保持反应性蚀刻气体的功能，位于气体保持功能内的用于支撑工件的第一电极，位于气体保持功能内并与第一电极间隔开预定距离的第二电极，功能 用于提供高频电力，从而将反应性蚀刻气体转换成在第一和第二电极之间的空间中的等离子体，以及用于向蚀刻速度高的工件的那部分提供蚀刻抑制气体的功能。

公开(公告)号：US5336366A

公开(公告)日：1994-08-09

申请号：US42929

申请日：1993-04-05

Applicant: John L. Cain ,  Chang-Ou Lee

Inventor： John L. Cain ,  Chang-Ou Lee

IPC: H01J37/32 ,  H01L21/00 ,  H01L21/306 ,  B44C1/22

CPC classification number: H01L21/67069 ,  H01J37/32357 ,  H01J2237/3343

Abstract: A dry etcher and method using two chambers can be used for anisotropic or isotropic etching. A pressure differential is created between the first and second chambers using a passage between the first and second chambers. Additionally, baffles which remove some of the ions created in the first chamber are used.

Abstract translation: 使用两个室的干蚀刻机和方法可用于各向异性或各向同性蚀刻。 使用第一和第二室之间的通道在第一和第二室之间产生压力差。 此外，使用去除在第一室中产生的一些离子的挡板。

公开(公告)号：US20240234104A1

公开(公告)日：2024-07-11

申请号：US18559313

申请日：2022-05-16

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Michael C. Kellogg

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32642 ,  H01J37/32568 ,  H01J2237/3343 ,  H01L21/67069

Abstract: A confinement ring for use in a plasma processing chamber includes an upper horizontal section, an upper vertical section, a mid-section, a lower vertical section, a lower horizontal section and a vertical extension. The upper horizontal section extends between an inner upper radius and a first outer radius of the confinement ring. The mid-section extends between inner upper radius and a second outer radius of the confinement ring. The lower horizontal section extends between an inner lower radius and the second outer radius, and the vertical extension extends down from the lower horizontal section proximate to the inner lower radius. The upper vertical section extends between the upper horizontal section and the mid-section proximate to the inner upper radius, and the lower vertical section extends between the mid-section and the lower horizontal section proximate to the second outer radius.

公开(公告)号：US12027345B2

公开(公告)日：2024-07-02

申请号：US17294469

申请日：2019-09-18

Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTD

Inventor： Xiaobo Liu ,  Xuedong Li ,  Yong Qiu ,  Na Li ,  Yonggang Hou ,  Dongdong Hu ,  Lu Chen ,  Kaidong Xu

IPC: H01J37/32 ,  H01L21/66

CPC classification number: H01J37/32183 ,  H01L22/26 ,  H01J37/32642 ,  H01J2237/2007 ,  H01J2237/3343

Abstract: An etching uniformity regulating device and method. The device comprises an inductor and a capacitor connected in parallel. One end of the etching uniformity regulating device is connected to a built-in ring located at the edge of an electrostatic chuck of an etching machine, and the other end is grounded. The purpose of controlling the edge electric field is achieved by regulating a capacitance of the capacitor, so as to regulate the etching rate of the edge, thereby achieving etching uniformity.

公开(公告)号：US20240203700A1

公开(公告)日：2024-06-20

申请号：US17908902

申请日：2021-03-22

Applicant: JUSUNG ENGINEERING CO., LTD.

Inventor： Ho Boem HER ,  Chang Yong KIM ,  Yong Hwan LEE

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32513 ,  H01J37/32522 ,  H01L21/67069 ,  H01J2237/3343

Abstract: Disclosed is a substrate processing apparatus having a symmetrical reaction space in which a process is performed after a substrate is transferred into the reaction space. The substrate processing apparatus may include: a chamber including a reaction space having an opening formed at one or more sidewalls; and a valve configured to open/close the opening. The valve may include: a blade housed in the chamber including the sidewall and a chamber bottom, which form the reaction space, and configured to open/close the opening; and a driving unit configured to raise and lower the blade, wherein one surface of the blade is formed as the same plane as the inner surface of the chamber by the closing of the opening.

公开(公告)号：US12009180B2

公开(公告)日：2024-06-11

申请号：US17435509

申请日：2020-08-27

Applicant: Hitachi High-Tech Corporation

Inventor： Norihiko Ikeda ,  Kazuya Yamada

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32128 ,  H01J37/32146 ,  H01J37/32201 ,  H01J37/32293 ,  H01J37/32311 ,  H01J2237/3343

Abstract: A plasma processing apparatus includes: a processing chamber; a first radio frequency power supply configured to supply a first radio frequency power; a second radio frequency power supply configured to supply a second radio frequency power; and a control device configured to, when the first radio frequency power is modulated by a first waveform having a first period and a second period adjacent to the first period, and the second radio frequency power supply is modulated by a second waveform having a period A and a period B, control the second radio frequency power supply such that each second radio frequency power in the period A is supplied in the first period and the second period, in which an amplitude in the second period is smaller than an amplitude in the first period, and an amplitude in the period A is larger than an amplitude in the period B.

公开(公告)号：US11972925B2

公开(公告)日：2024-04-30

申请号：US17314517

申请日：2021-05-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Bong seong Kim ,  Ken Kobayashi ,  Mitsunori Ohata ,  Yoon Ho Bae

IPC: H01L21/00 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32146 ,  H01J37/321 ,  H01J37/32155 ,  H01J37/32568 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67069 ,  H01L21/6831 ,  H01J2237/3343

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed in the plasma processing chamber and including a lower electrode; a source RF generator coupled to the plasma processing chamber and configured to generate a source RF signal including high states and low states in alternate manner; and a bias DC generator coupled to the lower electrode and configured to generate a bias DC signal including ON states and OFF states in alternate manner. Each ON state includes a plurality of cycles, each cycle including a first sequence of first pulses and a second sequence of second pulses, each first pulse having a first voltage level, and each second pulse having a second voltage level different from the first voltage level.

公开(公告)号：US20240120185A1

公开(公告)日：2024-04-11

申请号：US18544468

申请日：2023-12-19

Applicant: Tokyo Electron Limited

Inventor： Kazuki TSUCHIYA

IPC: H01J37/32

CPC classification number: H01J37/32834 ,  H01J37/32633 ,  H01J37/32862 ,  H01J2237/3343

Abstract: The chamber is internally provided with a stage on which a substrate is disposed, and an exhaust port connected to an exhaust system around the stage. The baffle is provided around the stage, and divides a space in the chamber into a processing space where plasma processing is performed on the substrate, and an exhaust space connected to the exhaust port. The switching mechanism switches the baffle between a shield state in which the baffle shields a plasma and a transmissive state in which the baffle allows a plasma to pass therethrough. The controller controls the switching mechanism to switch the baffle from the shield state to the transmissive state or from the transmissive state to the shield state.

公开(公告)号：US20240055238A1

公开(公告)日：2024-02-15

申请号：US18359953

申请日：2023-07-27

Applicant: SK enpulse Co., Ltd.

Inventor： Kyungyeol MIN ,  Yongsoo CHOI ,  SungSic HWANG ,  Kyungin KIM ,  Jungkun KANG ,  Su Man CHAE

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32715 ,  H01J2237/3343

Abstract: A plasma etching apparatus includes a chamber configured to generate plasma, an electrostatic chuck disposed in the chamber, and a focus ring placed on the electrostatic chuck and configured to support an object to be etched. The focus ring includes a seating part and a body part. A seating surface is provided on at least a portion of the seating part configured to seat the object to be etched thereon. The focus ring further includes a step provided between the seating part and the body part. The body part includes a body area and a chucking reinforcement area. The body area includes a first corrosion resistant layer, and the chucking reinforcement area includes a second corrosion resistant layer. The second corrosion resistant layer is thinner than the first corrosion resistant layer, and has a minimum thickness of 1 mm or more.

公开(公告)号：US20230377849A1

公开(公告)日：2023-11-23

申请号：US17841443

申请日：2022-06-15

Applicant: Tokyo Electron Limited

Inventor： Shyam Sridhar ,  Ya-Ming Chen ,  Peter Lowell George Ventzek ,  Mitsunori Ohata ,  Alok Ranjan

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01J37/32449 ,  H01J37/32146 ,  H01L21/3065 ,  H01L21/31116 ,  H01J2237/3343 ,  H01J2237/332

Abstract: A method of processing a substrate that includes: loading the substrate in a plasma processing chamber, the substrate including an underlying layer; maintaining a steady state flow of a process gas into the plasma processing chamber in the plasma processing chamber; generating a plasma in the plasma processing chamber; exposing the substrate to the plasma to etch the underlying layer; and pulsing a first additional gas, using a first effusive gas injector, towards a first region of the substrate to disrupt the steady state flow of the process gas over the first region, the pulsing locally changing a composition of the plasma near the first region.