公开(公告)号：US20130267052A1

公开(公告)日：2013-10-10

申请号：US13898808

申请日：2013-05-21

申请人： The University of Tokyo ,  FUJITSU LIMITED

发明人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Manabu Matsuda ,  Yasuhiko Arakawa

IPC分类号： H01S5/34

CPC分类号： H01S5/341 ,  B82Y20/00 ,  B82Y40/00 ,  H01L33/02 ,  H01L33/30 ,  H01S5/0424 ,  H01S5/12 ,  H01S5/22 ,  H01S5/221 ,  H01S5/309 ,  H01S5/3403 ,  H01S5/3412 ,  H01S5/34313 ,  Y10S977/774

摘要： A method for manufacturing a semiconductor light emitting device includes forming a lower cladding layer over a GaAs substrate; forming a quantum dot active layer over the lower cladding layer; forming a first semiconductor layer over the quantum dot active layer; forming a diffraction grating by etching the first semiconductor layer; forming a second semiconductor layer burying the diffraction grating; and forming an upper cladding layer having a conductive type different from that of the lower cladding layer over the second semiconductor layer, wherein the processes after forming the quantum dot active layer are performed at a temperature not thermally deteriorating or degrading quantum dots included in the quantum dot active layer.

摘要翻译： 一种制造半导体发光器件的方法包括在GaAs衬底上形成下覆层; 在下包层上形成量子点有源层; 在所述量子点有源层上形成第一半导体层; 通过蚀刻第一半导体层形成衍射光栅; 形成掩埋所述衍射光栅的第二半导体层; 以及在所述第二半导体层上形成具有与所述下包层的导电类型不同的导电类型的上包覆层，其中形成所述量子点有源层之后的工艺在不会使所述量子中包含的量子点不会发生热劣化或降解的温度下进行 点活动层。

公开(公告)号：US20120107991A1

公开(公告)日：2012-05-03

申请号：US13279121

申请日：2011-10-21

申请人： Chia-Yen Huang ,  Shuji Nakamura ,  Steven P. DenBaars ,  James S. Speck

发明人： Chia-Yen Huang ,  Shuji Nakamura ,  Steven P. DenBaars ,  James S. Speck

IPC分类号： H01L33/06 ,  H01S5/343 ,  H01L21/18

CPC分类号： H01L33/08 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/309 ,  H01S5/34333

摘要： A III-nitride-based light emitting device having a multiple quantum well (MQW) structure and a method for fabricating the device, wherein at least one barrier in the MQW structure is doped with magnesium (Mg). The Mg doping of the barrier is accomplished by introducing a bis(cyclopentadienyl)magnesium (Cp2Mg) flow during growth of the barrier using metalorganic chemical vapor deposition (MOCVD). The barriers of the MQW structure may be undoped, fully Mg-doped or partially Mg-doped. When the barrier is partially Mg-doped, only portions of the barrier are Mg-doped to prevent Mg diffusion into quantum wells of the MQW structure. The Mg-doped barriers preferably are high Al composition AlGaN barriers in nonpolar or semipolar devices.

摘要翻译： 具有多量子阱（MQW）结构的III族氮化物系发光器件及其制造方法，其中MQW结构中的至少一个势垒掺杂有镁（Mg）。 通过使用金属有机化学气相沉积（MOCVD）在势垒生长期间引入双（环戊二烯基）镁（Cp2Mg）流来实现势垒的Mg掺杂。 MQW结构的障碍可以是未掺杂的，完全Mg掺杂的或部分Mg掺杂的。 当势垒部分Mg掺杂时，只有部分势垒是Mg掺杂的，以防止Mg扩散到MQW结构的量子阱中。 Mg掺杂的栅极优选是非极性或半极性器件中的高Al组分AlGaN屏障。

公开(公告)号：US08080818B2

公开(公告)日：2011-12-20

申请号：US12472447

申请日：2009-05-27

申请人： Akira Tanaka

发明人： Akira Tanaka

IPC分类号： H01L29/06

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/025 ,  H01L33/32 ,  H01S5/309 ,  H01S5/34333

摘要： A light emitting device includes: a first layer made of a semiconductor of a first conductivity type; a second layer made of a semiconductor of a second conductivity type; an active layer including a multiple quantum well provided between the first layer and the second layer, impurity concentration of the first conductivity type in each barrier layer of the multiple quantum well having a generally flat distribution or increasing toward the second layer, average of the impurity concentration in the barrier layer on the second layer side as viewed from each well layer of the multiple quantum well being equal to or greater than average of the impurity concentration in the barrier layer on the first layer side, and average of the impurity concentration in the barrier layer nearest to the second layer being higher than average of the impurity concentration in the barrier layer nearest to the first layer.

摘要翻译： 发光器件包括：由第一导电类型的半导体制成的第一层; 由第二导电类型的半导体制成的第二层; 包括设置在第一层和第二层之间的多量子阱的有源层，多量子阱的每个势垒层中的第一导电类型的杂质浓度具有大致平坦的分布或朝着第二层增加，杂质的平均值 从多量子阱的各阱层观察的第二层侧的阻挡层的浓度等于或大于第一层侧的阻挡层中的杂质浓度的平均值，以及 最靠近第二层的阻挡层高于最靠近第一层的势垒层中的杂质浓度的平均值。

公开(公告)号：US20110150020A1

公开(公告)日：2011-06-23

申请号：US13060554

申请日：2009-08-18

申请人： Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun

发明人： Michael A. Haase ,  Thomas J. Miller ,  Xiaoguang Sun

IPC分类号： H01S5/347 ,  H01S5/183 ,  H01S5/187

CPC分类号： H01S5/041 ,  B82Y20/00 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/024 ,  H01S5/1039 ,  H01S5/14 ,  H01S5/18308 ,  H01S5/2009 ,  H01S5/2022 ,  H01S5/2027 ,  H01S5/309 ,  H01S5/347 ,  H01S5/423 ,  H01S2301/18

摘要： Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174) emitted by the pump light source (170) to at least a partially coherent light at a second wavelength (176). The VCSEL includes first and second mirrors (120, 160) that form an optical cavity for light at the second wavelength. The first mirror (120) is substantially reflective at the second wavelength and includes a first multilayer stack. The second mirror (160) is substantially transmissive at the first wavelength and partially reflective and partially transmissive and the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack (130) that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light. The semiconductor multilayer stack (130) includes a quantum well that includes a Cd(Mg)ZnSe alloy.

摘要翻译： 公开了光源。 所公开的光源包括包含氮并发射第一波长的光的基于III-V的泵浦光源（170）。 光源还包括垂直腔表面发射激光器（VCSEL），其将由泵浦光源（170）发射的第一波长光（174）的至少一部分转换成第二波长的至少部分相干光（176 ）。 VCSEL包括为第二波长的光形成光腔的第一和第二反射镜（120,160）。 第一反射镜（120）在第二波长处基本上是反射性的并且包括第一多层叠层。 第二反射镜（160）在第一波长处基本上是透射的，并且在第二波长处是部分反射和部分透射的。 第二反射镜包括第二多层叠层。 VCSEL还包括设置在第一和第二反射镜之间并将第一波长光的至少一部分转换成第二波长光的半导体多层堆叠（130）。 半导体多层堆叠（130）包括包含Cd（Mg）ZnSe合金的量子阱。

公开(公告)号：US20110026556A1

公开(公告)日：2011-02-03

申请号：US12782255

申请日：2010-05-18

申请人： Kazuue FUJITA ,  Masamichi Yamanishi ,  Tadataka Edamura ,  Naota Akikusa

发明人： Kazuue FUJITA ,  Masamichi Yamanishi ,  Tadataka Edamura ,  Naota Akikusa

IPC分类号： H01S5/00

CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3407

摘要： A quantum cascade laser is configured to include a semiconductor substrate and an active layer which is provided on the substrate and has a cascade structure formed by multistage-laminating unit laminate structures 16 each including an emission layer 17 and an injection layer 18. The unit laminate structure 16 has, in its subband level structure, a first emission upper level Lup1, a second emission upper level Lup2 of an energy higher than the first emission upper level, an emission lower level Llow, and a relaxation level Lr of an energy lower than the emission lower level, light is generated by intersubband transitions of electrons from the first and second upper levels to the lower level, and electrons after the intersubband transitions are relaxed from the lower level to the relaxation level and injected from the injection layer 18 into an emission layer 17b of a subsequent stage via the relaxation level. Accordingly, a quantum cascade laser capable of preferably obtaining emission in a broad wavelength range is realized.

摘要翻译： 量子级联激光器被配置为包括半导体衬底和有源层，其设置在衬底上并且具有由包括发射层17和注入层18的多级层压单元层压结构16形成的级联结构。单元层压体 结构16在其子带电平结构中具有第一发射上电平Lup1，高于第一发射上电平的能量的第二发射上电平Lup2，发射较低电平Llow以及低于 发射较低电平，光通过从第一和第二上电平到下电平的电子的子带间跃迁产生，并且子带间跃迁之后的电子从较低电平松弛到弛豫电平，并从注入层18注入到 发光层17b经由弛豫程度。 因此，可以实现能够优选在宽波长范围内获得发射的量子级联激光器。

公开(公告)号：US20100166033A1

公开(公告)日：2010-07-01

申请号：US12347392

申请日：2008-12-31

申请人： Ming-Ta CHIN ,  Kuo-Feng HUANG ,  Ping-Fei SHEN ,  Ching-Jen WANG ,  Shih-Pang CHANG

发明人： Ming-Ta CHIN ,  Kuo-Feng HUANG ,  Ping-Fei SHEN ,  Ching-Jen WANG ,  Shih-Pang CHANG

IPC分类号： H01S5/00

CPC分类号： H01S5/343 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/30 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/309 ,  H01S5/3407

摘要： A semiconductor light-emitting device includes a substrate, a first cladding layer over the substrate, an active region on the first cladding layer, and a second cladding layer on the active region, wherein the active region includes a first type barrier layer that is doped and a second type barrier layer that is undoped, the first type barrier layer being closer to the first cladding layer than the second type barrier layer.

摘要翻译： 一种半导体发光器件，包括：衬底，衬底上的第一覆层，第一覆层上的有源区和有源区上的第二覆层，其中有源区包括掺杂的第一类阻挡层 以及不掺杂的第二类型阻挡层，所述第一类型阻挡层比所述第二类型阻挡层更靠近所述第一包覆层。

公开(公告)号：US20090283748A1

公开(公告)日：2009-11-19

申请号：US12120562

申请日：2008-05-14

申请人： Sebastian Csutak

发明人： Sebastian Csutak

IPC分类号： H01L29/12

CPC分类号： H01L29/2003 ,  B82Y20/00 ,  G01V8/02 ,  H01L29/772 ,  H01L29/861 ,  H01L33/06 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/2009 ,  H01S5/309 ,  H01S5/3216 ,  H01S5/3407 ,  H01S5/34333 ,  H01L2924/00

摘要： A gallium-nitride semiconductor apparatus may include an active region having one or more nitride-based barrier layers that are modulation-doped using a nitride-based doped layer. An active region may have at least two nitride-based barrier layers, and a nitride-based blocking layer may be disposed between the at least two barrier layers.

摘要翻译： 氮化镓半导体装置可以包括具有使用氮化物基掺杂层进行调制掺杂的一个或多个基于氮化物的势垒层的有源区。 有源区可以具有至少两个基于氮化物的阻挡层，并且氮化物基阻挡层可以设置在至少两个势垒层之间。

公开(公告)号：US20080230794A1

公开(公告)日：2008-09-25

申请号：US10591987

申请日：2005-03-08

申请人： Takaki Yasuda ,  Hideki Tomozawa

发明人： Takaki Yasuda ,  Hideki Tomozawa

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/309 ,  H01S5/34333

摘要： A pn junction type Group III nitride semiconductor light-emitting device 10 (11) of the present invention has a light-emitting layer 2 of multiple quantum well structure in which well layers 22 and barrier layers 21 including Group III nitride semiconductors are alternately stacked periodically between an n-type clad layer 105 and a p-type clad layer 107 which are formed on a crystal substrate and which include Group III nitride semiconductors, in which one end layer 21m of the light-emitting layer 2 is closest to and opposed to the n-type clad layer, and the other end layer 21n of the light-emitting layer 2 is closest to and opposed to the p-type clad layer, both the one and the other end layers are barrier layers, and the other end layer 21n is thicker than the barrier layer of the one end layer.

摘要翻译： 本发明的pn结型III族氮化物半导体发光器件10（11）具有多个量子阱结构的发光层2，其中阱层22和包含III族氮化物半导体的阻挡层21周期性地交替堆叠 在形成在晶体基板上并且包括III族氮化物半导体的n型覆盖层105和p型覆盖层107之间，其中发光层2的一个端层21m最接近并相对 发光层2的另一端层21n与p型覆盖层最接近并与其对置，所以一个端层和另一个端层都是阻挡层，而另一个端层 端层21n比一端层的阻挡层厚。

公开(公告)号：US20060222028A1

公开(公告)日：2006-10-05

申请号：US11341588

申请日：2006-01-30

申请人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Koji Otsubo ,  Yasuhiko Arakawa

发明人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Koji Otsubo ,  Yasuhiko Arakawa

IPC分类号： H01S5/00

CPC分类号： H01S5/341 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/0206 ,  H01S5/0422 ,  H01S5/06226 ,  H01S5/22 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3412 ,  H01S5/34306

摘要： An intrinsic GaAs waveguide layer is formed on a p-type AlGaAs cladding layer, a quantum dot active layer is formed further thereon. An n-type AlGaAs cladding layer is formed on the center portion of the quantum dot active layer. Thus-configured semiconductor laser is allowed to successfully suppress the area of the p-n junction plane to a small level, and to obtain a high level of reliability, because there is no need of processing the center portion of the quantum dot active layer, contributive to laser oscillation.

公开(公告)号：US20060120422A1

公开(公告)日：2006-06-08

申请号：US11272025

申请日：2005-11-14

申请人： Masamichi Yamanishi ,  Naota Akikusa ,  Tadataka Edamura

发明人： Masamichi Yamanishi ,  Naota Akikusa ,  Tadataka Edamura

IPC分类号： H01S5/00

CPC分类号： H01S5/34313 ,  B82Y20/00 ,  H01S5/0261 ,  H01S5/028 ,  H01S5/0607 ,  H01S5/0687 ,  H01S5/1203 ,  H01S5/1228 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/309 ,  H01S5/3422 ,  H01S5/34353

摘要： A laser device includes a laminated body obtained by laminating a plurality of semiconductor layers on a semiconductor substrate. One semiconductor layer of the plurality of semiconductor layers is an active layer in which a light-emission region and an injecting region are alternately laminated. The laser device is provided with a cascade laser element for outputting light L generated in the active layer from a first end face included in the laminated body, a part for supplying a voltage to the laser element and driving the laser element, a part for supplying an elastic wave traveling in the direction orthogonal to the first end face of the laminated body to the active layer, and a part for supplying a turn-on voltage in which the gain of the laser element becomes the approximate maximum value to the laser element by the element driving part, and supplying the elastic wave to the active layer by the elastic wave supplying part.

摘要翻译： 激光装置包括通过在半导体衬底上层叠多个半导体层而获得的层叠体。 多个半导体层的一个半导体层是发光区域和注入区域交替层叠的有源层。 激光装置设置有用于从包括在层叠体中的第一端面输出在有源层中产生的光L的级联激光元件，用于向激光元件提供电压并驱动激光元件的部分，用于供应的部分 弹性波在与层叠体的第一端面正交的方向上向有源层行进的弹性波，以及用于向激光元件提供激光元件的增益成为近似最大值的导通电压的部分， 元件驱动部分，并通过弹性波供应部分将弹性波提供给有源层。