公开(公告)号：US06429103B1

公开(公告)日：2002-08-06

申请号：US09548791

申请日：2000-04-13

申请人： Eric Shanks Johnson ,  Nyles Wynn Cody

发明人： Eric Shanks Johnson ,  Nyles Wynn Cody

IPC分类号： H01L21265

CPC分类号： H01L29/66446 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02546 ,  Y10S438/93

摘要： A method of fabricating an Emode HIGFET semiconductor device, and the device, is disclosed including epitaxially growing by metal-organic chemical vapor deposition an epitaxial buffer. The buffer includes a layer of short-lifetime gallium arsenide on a gallium arsenide substrate and a layer of aluminum gallium arsenide on the layer of short-lifetime gallium arsenide. The short-lifetime gallium arsenide is grown at a temperature below approximately 550° C. so as to have a lifetime less than approximately 500 picoseconds. A stack of compound semiconductor layers is then epitaxially grown on the layer of aluminum gallium arsenide of the buffer and an Emode field effect transistor is formed in the stack.

摘要翻译： 公开了一种制造Emode HIGFET半导体器件的方法，该器件包括通过金属 - 有机化学气相沉积外延生长外延缓冲器。 该缓冲器包括在砷化镓衬底上的短寿命砷化镓层和在短寿命砷化镓层上的一层砷化铝镓。 短寿命砷化镓在低于约550℃的温度下生长，使其寿命小于约500皮秒。 然后在缓冲器的铝镓砷化物层上外延生长堆叠的化合物半导体层，并且在堆叠中形成发光二极管场效应晶体管。

公开(公告)号：US5433170A

公开(公告)日：1995-07-18

申请号：US336052

申请日：1994-11-04

申请人： Atsushi Toda ,  Takeharu Asano

发明人： Atsushi Toda ,  Takeharu Asano

IPC分类号： C23C16/30 ,  C30B25/02 ,  H01L21/205 ,  H01L21/365 ,  H01L33/00 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01L21/20

CPC分类号： H01L33/28 ,  C23C16/305 ,  C23C16/306 ,  C30B25/02 ,  C30B29/48 ,  H01L33/0087 ,  Y10S438/93

摘要： A metal-organic chemical vapor-phase deposition process for fabricating a layer of a Group II-VI compound semiconductor using an organometallic compound based on bis(cyclopentadienyl)magnesium having a vapor pressure in the range of from 1.3.times.10 Pa to 1.3.times.10.sup.2 Pa at a temperature of 330.degree. K. The present invention also provides a light-emitting device which is fabricated by means of the metal-organic vapor-phase deposition process above. The process according to the present invention provides a magnesium-containing compound semiconductor layer having an accurately controlled composition, and it readily enables the fabrication of a compound semiconductor layer having a grated structure.

摘要翻译： 一种金属有机化学气相沉积方法，用于使用基于双（环戊二烯基）镁的有机金属化合物制造一组II-VI族化合物半导体，该双（环戊二烯基）镁的蒸气压在1.3×10 8 Pa至1.3×10 2 Pa范围内 温度为330°K.本发明还提供了通过上述金属 - 有机气相沉积工艺制造的发光器件。 根据本发明的方法提供了具有精确控制的组成的含镁化合物半导体层，并且容易地制造具有磨碎结构的化合物半导体层。

公开(公告)号：US5427716A

公开(公告)日：1995-06-27

申请号：US160757

申请日：1993-12-03

申请人： Yoshio Morita

发明人： Yoshio Morita

IPC分类号： H01B1/06 ,  H01B1/10 ,  H01L33/26 ,  H01S5/32 ,  H01B1/00 ,  H01B1/02

CPC分类号： H01L33/26 ,  H01B1/06 ,  H01B1/10 ,  H01S5/32 ,  Y10S438/93

摘要： Novel compound semiconductors are of the general formula,X.sub.5 YZ.sub.4,wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al, Ga, Tl and mixtures thereof, and Z is a member selected from the group consisting of Se, S, Te and mixtures thereof. Typical of the compound semiconductors are Cu.sub.5 AlSe.sub.4 and Ag.sub.5 AlSe.sub.4. These compound semiconductors are especially useful for making blue to UV light-emitting devices which include n-type and p-type compound semiconductor layers made of the above compound semiconductors.

摘要翻译： 新型化合物半导体具有通式X 5 YZ 4，其中X是选自Cu，Ag及其混合物的成员，Y是选自Al，Ga，Tl及其混合物的成员，Z 是选自Se，S，Te及其混合物的成员。 典型的化合物半导体是Cu5AlSe4和Ag5AlSe4。 这些化合物半导体特别可用于制造蓝色至UV发光器件，其包括由上述化合物半导体制成的n型和p型化合物半导体层。

公开(公告)号：US5421910A

公开(公告)日：1995-06-06

申请号：US195823

申请日：1994-02-10

申请人： Manijeh Razeghi

发明人： Manijeh Razeghi

IPC分类号： H01L29/201 ,  H01L31/0304 ,  H01L31/18 ,  H01L29/12

CPC分类号： H01L31/03046 ,  H01L29/201 ,  H01L31/1844 ,  H01L31/1852 ,  Y02E10/544 ,  Y10S438/93

摘要： An intermetallic compound semiconductor thin film comprises thin film made of the III-V group intermetallic compound InTlSb. Preferably, the thin film is grown by a vapor phase MOCVD method.

摘要翻译： 金属间化合物半导体薄膜包括由III-V族金属间化合物InTlSb制成的薄膜。 优选地，通过气相MOCVD法生长薄膜。

公开(公告)号：US4818357A

公开(公告)日：1989-04-04

申请号：US47414

申请日：1987-05-06

申请人： Christopher Case ,  Joseph J. Loferski ,  Francisco Sanchez-Quesada

发明人： Christopher Case ,  Joseph J. Loferski ,  Francisco Sanchez-Quesada

IPC分类号： C23C14/06 ,  C23C14/54 ,  H01L21/363 ,  H01L31/032 ,  H01L31/068 ,  H01L31/0687 ,  C23C14/56

CPC分类号： H01L31/0687 ,  C23C14/06 ,  C23C14/0623 ,  C23C14/548 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/0322 ,  H01L31/068 ,  Y02E10/541 ,  Y02E10/544 ,  Y02E10/547 ,  Y10S438/93

摘要： A vacuum chamber is provided for sputter deposition of a semiconductor homojunction. A target made of a semiconductor compound containing at least one non-metallic element is provided. A substrate for receiving the sputtered species from the target to form sequential layers of deposited semiconductor material is also provided. An electric field is provided between the target and the substrate. An inert gas is introduced sequentially at a plurality of discrete partial pressures to adjust the incident energy of the sputtered species by thermalization, for altering the mean free path of the sputtered and incident species to control the ratio of non-metallic to metallic elements in the deposited semiconductor material and create a plurality of different semiconductor material layers.

摘要翻译： 提供了用于溅射沉积半导体同质结的真空室。 提供由含有至少一种非金属元素的半导体化合物制成的靶。 还提供了用于从靶材接收溅射物质以形成沉积的半导体材料的顺序层的衬底。 在靶和衬底之间提供电场。 以多个离散的分压顺序地引入惰性气体，以通过热化来调节溅射物质的入射能，以改变溅射和入射物质的平均自由程，以控制溅射和入射物质中的非金属元素的比例 沉积的半导体材料并产生多个不同的半导体材料层。

公开(公告)号：US4529832A

公开(公告)日：1985-07-16

申请号：US581783

申请日：1984-02-21

申请人： Arden Sher ,  John B. Mooney

发明人： Arden Sher ,  John B. Mooney

IPC分类号： H01L31/032 ,  H01L31/062 ,  H01L31/068 ,  H01L31/072 ,  H01L31/06

CPC分类号： H01L31/0324 ,  H01L31/062 ,  H01L31/068 ,  H01L31/072 ,  Y02E10/547 ,  Y10S438/93

摘要： A solar cell in which the essential feature is a thin film of lead-cadmium-sulphide alloy. This alloy is preferably formed by spray pyrolysis from a solution containing the necessary ingredients. The solar cell advantageously takes the form of a homojunction constructed of two layers of lead-cadmium-sulphide alloy, with one of the layers being p-doped and the other of the layers being n-doped. The solar cell may be produced with an intrinsic layer interposed between the p-type layer and the n-type layer. The solar cell may also be made with a semiconductive layer of lead-cadmium-sulphide in contact with a metallic substrate.

摘要翻译： 一种太阳能电池，其主要特征是硫化镉合金薄膜。 该合金优选通过从含有必要成分的溶液喷雾热解形成。 太阳能电池有利地采用由两层铅 - 硫化镉合金构成的同质结的形式，其中一层是p掺杂的，另一层是n掺杂的。 太阳能电池可以用介于p型层和n型层之间的本征层制造。 太阳能电池还可以用与金属基底接触的硫化镉硫化物半导体层制成。

公开(公告)号：US4398055A

公开(公告)日：1983-08-09

申请号：US295072

申请日：1981-08-21

申请人： Lubna R. Ijaz ,  Larry C. Burton

发明人： Lubna R. Ijaz ,  Larry C. Burton

IPC分类号： H01L31/032 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/06 ,  C23C15/00 ,  H01L31/18

CPC分类号： H01L31/072 ,  H01L31/032 ,  H01L31/0336 ,  Y02E10/50 ,  Y10S438/93

摘要： Thin film radiant energy converter having a sputtered CdSiAs.sub.2 photovoltaic absorber layer and a thermally evaporated CdS top layer. The sputtering technique with multiple targets (Cd, Si, As) is used to obtain stoichiometric CdSiAs.sub.2 thin films which are polycrystalline and have large grain size to thereby reduce grain boundary recombinations of the photogenerated electrons.

摘要翻译： 具有溅射的CdSiAs 2光伏吸收层和热蒸发的CdS顶层的薄膜辐射能转换器。 使用具有多个靶（Cd，Si，As）的溅射技术来获得化学计量的CdSiAs2薄膜，其是多晶的并且具有大的晶粒尺寸，从而减少光生电子的晶界复合。

公开(公告)号：US4282045A

公开(公告)日：1981-08-04

申请号：US143562

申请日：1980-04-25

申请人： James D. Jensen ,  Richard B. Schoolar

发明人： James D. Jensen ,  Richard B. Schoolar

IPC分类号： C30B23/00 ,  C30B23/04 ,  H01L31/032 ,  H01L31/065 ,  H01L29/26 ,  H01L27/12

CPC分类号： H01L31/065 ,  C30B23/007 ,  C30B23/04 ,  C30B29/46 ,  H01L31/0324 ,  Y02E10/50 ,  Y10S438/93 ,  Y10S438/936

摘要： A variable temperature method for the preparation of single and multiple epitaxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a wherein w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.

摘要翻译： 用于制备单相（例如，面心立方）三元铅硫族化物合金（例如，硫化铅，[Pb1-wCdw] a [S] 1-a）的单个和多个外延层的可变温度方法，其中 w在不同的升华铅合金和硫族化合物源之间保持在接近热力学平衡状态下沉积在氟化钡BaF2的基底上的零和百分之零和百分之零和百分之零零零零，并且a = 0.500 +/- 0.003）。 在制备过程中，衬底的温度是变化的，从而提供具有渐变组成的外延层和沿着生长方向的预定的电学和光学特性。 该生长技术可用于生产红外透镜，窄带检测器和双异质结激光器。

公开(公告)号：US2882467A

公开(公告)日：1959-04-14

申请号：US65843157

申请日：1957-05-10

申请人： BELL TELEPHONE LABOR INC

发明人： WERNICK JACK H

CPC分类号： H01L29/207 ,  Y10S438/93

公开(公告)号：US09142637B2

公开(公告)日：2015-09-22

申请号：US13027912

申请日：2011-02-15

申请人： Robert Beach ,  Paul Bridger

发明人： Robert Beach ,  Paul Bridger

IPC分类号： H01L21/76 ,  H01L29/66 ,  H01L21/762 ,  H01L29/20

CPC分类号： H01L29/66462 ,  H01L21/76 ,  H01L21/7605 ,  H01L21/76264 ,  H01L21/76289 ,  H01L29/2003 ,  Y10S438/93

摘要： III-nitride materials are used to form isolation structures in high voltage ICs to isolate low voltage and high voltage functions on a monolithic power IC. Critical performance parameters are improved using III-nitride materials, due to the improved breakdown performance and thermal performance available in III-nitride semiconductor materials. An isolation structure may include a dielectric layer that is epitaxially grown using a III-nitride material to provide a simplified manufacturing process. The process permits the use of planar manufacturing technology to avoid additional manufacturing costs. High voltage power ICs have improved performance in a smaller package in comparison to corresponding silicon structures.

摘要翻译： III族氮化物材料用于在高电压IC中形成隔离结构，以隔离单片电源IC上的低电压和高电压功能。 由于III族氮化物半导体材料的击穿性能和热性能的改善，使用III族氮化物材料改善了关键性能参数。 隔离结构可以包括使用III族氮化物材料外延生长以提供简化的制造工艺的电介质层。 该过程允许使用平面制造技术来避免额外的制造成本。 与相应的硅结构相比，高压功率IC在较小的封装中具有改进的性能。