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    Cryogenically cooled radiation detection apparatus
    31.
    发明授权
    Cryogenically cooled radiation detection apparatus 失效
    低温辐射检测仪

    公开(公告)号：US4740702A

    公开(公告)日：1988-04-26

    申请号：US821277

    申请日：1986-01-22

    Applicant: Yuchi Huang ,  Jeffrey M. Hoerning

    Inventor： Yuchi Huang ,  Jeffrey M. Hoerning

    IPC: G12B17/06 ,  F25D3/10 ,  F25D19/00 ,  G01J1/02 ,  G01J5/02 ,  G01J5/06 ,  G01J5/28 ,  G01J5/04

    CPC classification number: F25D3/10 ,  F25D19/006 ,  G01J5/061

    Abstract: A radiation detection apparatus, such as for the detection of infrared radiation, is formed of inner and outer cylindrical stainless steel vessels with the inner vessels supported from the top wall of the outer vessel by a thin, relatively long stainless steel tube. A heat transfer mounting member is attached to the bottom of the inner vessel and extends outwardly and then upwardly between and out of contact with the vessels to the position of a window opening within the outer vessel. A detector device is affixed in good thermal contact with the mounting member at the position of the window and thus is maintained substantially at the temperature of the bottom surface of the inner vessel. The surfaces of the inner and outer vessels may be highly polished to prevent heat transfer to the inner vessel by infrared radiation. The use of stainless steel for the outer vessel also allows utilization of a vacuum port window structure having a metal gasket to minimize potential gas infiltration.

    Abstract translation: 诸如用于检测红外辐射的放射线检测装置由内外圆柱形不锈钢容器形成，内部容器由外部容器的顶壁由较薄的较长的不锈钢管支撑。 传热安装构件附接到内部容器的底部，并且向外延伸，然后向上延伸到与容器接触并脱离与外部容器内的窗口的位置。 检测器装置在窗口的位置处与安装构件良好地热接触地固定，因此基本上保持在内部容器的底部表面的温度。 内部和外部容器的表面可以被高度抛光以防止通过红外线辐射传递到内部容器。 对于外部容器使用不锈钢也允许利用具有金属垫圈的真空口窗结构来最小化潜在的气体渗透。

    Infrared radiation detectors
    32.
    发明授权
    Infrared radiation detectors 失效
    红外辐射探测器

    公开(公告)号：US4625389A

    公开(公告)日：1986-12-02

    申请号：US750193

    申请日：1985-07-01

    Applicant: John B. Readhead

    Inventor： John B. Readhead

    IPC: G01J5/02 ,  G01J5/28 ,  H01L27/14 ,  H01L27/146 ,  H01L27/148 ,  H01L31/10 ,  H01L31/101 ,  H01L21/86 ,  H01L21/90 ,  H01L21/94 ,  H01L31/00

    CPC classification number: H01L31/101 ,  H01L27/14881 ,  H01L2224/24146 ,  H01L2924/01327

    Abstract: A multicolor or other multilevel infrared detector comprises at least one first detector element formed in a first portion of a lower body, e.g. of cadmium mercury telluride. At least one second detector element, having different detector characteristics, is formed in an upper body, e.g. of cadmium mercury telluride. The lower body is divided, preferably by ion etching into at least two (and more usually three or more) portions separated from each other by gaps. The gaps in the lower body are bridged by the upper body. Electrical connections to the second detector elements comprises the separate portions of the lower body. The electrical connections include metallization layers extending from the top to the substrate on which the lower body is mounted. The substrate may be of insulating material, e.g. sapphire, or it may be for example a silicon CCD for processing signals from the detector elements.

    Infra-red radiation imaging devices and methods for their manufacture
    33.
    发明授权
    Infra-red radiation imaging devices and methods for their manufacture 失效
    红外辐射成像装置及其制造方法

    公开(公告)号：US4521798A

    公开(公告)日：1985-06-04

    申请号：US355835

    申请日：1982-03-08

    Applicant: Ian M. Baker

    Inventor： Ian M. Baker

    IPC: G01J5/02 ,  G01J5/28 ,  G01T1/24 ,  H01L27/146 ,  H01L27/148 ,  H01L31/09 ,  H01L27/14 ,  H01L23/48 ,  H01L29/06 ,  H01L31/00

    CPC classification number: H01L27/14856 ,  H01L27/14881

    Abstract: An array of photovoltaic infrared radiation detector elements are formed in a body of infrared-sensitive material, e.g. of cadmium mercury telluride. The body is present on a circuit substrate, which may comprise a silicon CCD for processing signals from the detector elements. An array of regions of a first conductivity type, which form the p-n junctions of each detector element with an adjacent body part of opposite conductivity type, extend through the thickness of the body at side walls of an array of apertures. Each aperture is associated with a detector element and is preferably formed by ion etching. These regions of the first conductivity type are electrically connected to substrate conductors in a simple and reliable manner by a metallization layer in the apertures, without rendering a significant area of the detector insensitive to radiation imaged onto the upper surface of the body. At least the back surface of the detector body has a passivating layer over the area around and between the apertures to enhance detector element performance. This back surface is secured to the circuit substrate by a layer of electrically insulating adhesive. The main body part is connected to a substrate conductor by a metallization at a surface portion which is outside of the area of the back surface and which is between the apertures. The resulting device is a closely-packed array of high performance detector elements on a circuit substrate. The spacing between adjacent apertures is 100 microns or less.

    Abstract translation: 一组光电红外辐射探测器元件形成在红外线敏感材料体内， 的碲化汞镉。 身体存在于电路基板上，电路基板可以包括用于处理来自检测器元件的信号的硅CCD。 形成具有相反导电类型的相邻主体部分的每个检测器元件的p-n结的第一导电类型的区域的阵列在孔阵列的侧壁的侧壁处延伸穿过主体的厚度。 每个孔与检测器元件相关联，并且优选地通过离子蚀刻形成。 第一导电类型的这些区域以简单和可靠的方式通过孔中的金属化层电连接到衬底导体，而不会使检测器的显着区域对于成像到身体的上表面上的辐射不敏感。 至少检测器主体的后表面在孔周围和区域之间的区域上具有钝化层，以增强检测器元件的性能。 该背面通过电绝缘粘合剂层固定到电路基板。 主体部分通过在背面的区域外部并且在孔之间的表面部分处的金属化连接到基板导体。 所得到的器件是电路基板上的高性能检测器元件的紧密排列的阵列。 相邻孔之间的间距为100微米或更小。

    Method of manufacturing a detector device
    34.
    发明授权
    Method of manufacturing a detector device 失效
    检测装置的制造方法

    公开(公告)号：US4411732A

    公开(公告)日：1983-10-25

    申请号：US355440

    申请日：1982-03-03

    Applicant: John T. M. Wotherspoon

    Inventor： John T. M. Wotherspoon

    IPC: G01J5/02 ,  G01J5/28 ,  H01L21/42 ,  H01L21/423 ,  H01L31/10 ,  H01L31/103 ,  H01L31/18 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

    CPC classification number: H01L31/18 ,  H01L21/42 ,  H01L21/423 ,  H01L31/1032 ,  Y10S438/971

    Abstract: In the manufacture of an infrared radiation detector device, a body of p-type cadmium mercury telluride is bombarded with ions to etch away a part of the body. From the etched-away part of the body an excess concentration of mercury is produced which acts as a dopant source converting an adjacent part of the body into n-type material. The energy of the bombarding ions is less than 30 keV. By appropriately choosing the ion dose this conversion from p-type to n-type can be effected over a depth considerably greater than the penetration depth of the ions. A p-n junction can be fabricated in this way for a photovoltaic detector. The conductivity type conversion may even be effected through the body thickness. The etching and conversion can be localized by masking part of the body surface against the ion bombardment.

    Abstract translation: 在制造红外辐射检测器装置时，用离子轰击一个p型镉镉镉体，以蚀刻身体的一部分。 从身体的蚀刻部分产生过量的汞，其作为将身体的相邻部分转换为n型材料的掺杂剂源。 轰击离子的能量小于30keV。 通过适当地选择离子剂量，可以在比离子的穿透深度大得多的深度上实现从p型到n型的转化。 可以以这种方式制造p-n结用于光伏检测器。 导电类型转换甚至可以通过体的厚度来实现。 蚀刻和转换可以通过掩盖身体表面的一部分抵抗离子轰击来定位。

    Blink compensating method for objective refractor for the eye
    35.
    发明授权
    Blink compensating method for objective refractor for the eye 失效
    用于眼睛的目标吸收器的闪光补偿方法

    公开(公告)号：US3802768A

    公开(公告)日：1974-04-09

    申请号：US35364973

    申请日：1973-04-23

    Applicant: TROPEL

    Inventor： CLAPHAM T ,  HORWITZ J ,  ROBINSON B ,  MUNNERLYN C

    IPC: A61B3/10 ,  A61B3/103 ,  A61B5/11 ,  G01J5/28

    CPC classification number: A61B3/103 ,  A61B3/10 ,  A61B5/1103 ,  A61B5/7239

    Abstract: The inventive method compensates for blinks occurring during examination of the eye by an objective refractor. An analog signal is produced as a function of the focus of a light pattern reflected from the eye, and the signal is processed and fed to an analyzer for determining the refractive error of the eye. The input to the analyzer is delayed to follow the analog signal by a predetermined delay. Meanwhile, any rate of change of the analog signal exceeding a predetermined thresh-hold is detected to represent the beginning of a blink, and a blink commencement signal is produced and used to stop the examination of the eye for a predetermined blink interval exceeding the expected duration of the blink. Also, the analyzer ignores the portion of the analyzer input devoted to the blink interval.

    Abstract translation: 本发明的方法补偿由目标折射仪检查眼睛期间发生的眨眼。 产生作为从眼睛反射的光图案的焦点的函数的模拟信号，并且处理信号并将其馈送到用于确定眼睛的屈光不正的分析器。 延迟到分析仪的输入以遵循模拟信号预定的延迟。 同时，检测到超过预定阈值保持的模拟信号的任何变化率以表示眨眼的开始，并且产生眨眼开始信号，并用于停止超过预期的预定眨眼间隔的眼睛检查 眨眼持续时间 此外，分析仪也会忽略分析仪输入部分，用于闪烁间隔。

    Semiconductor type radiation detector
    36.
    发明授权
    Semiconductor type radiation detector 失效
    半导体型辐射探测器

    公开(公告)号：US3675018A

    公开(公告)日：1972-07-04

    申请号：US3675018D

    申请日：1970-12-03

    Applicant: SIEMENS AG

    Inventor： PAUL BERNT

    IPC: G01J1/02 ,  G01B11/00 ,  G01D5/26 ,  G01J5/02 ,  G01J5/28 ,  H01L31/06 ,  H01L37/04 ,  G01J5/20

    CPC classification number: H01L31/06 ,  Y02E10/50

    Abstract: An apparatus for detecting radiation emanating from a source movable along a path has an elongated radiation-sensitive electronic semiconductor of a first crystalline phase. The semiconductor is positionable substantially parallel to the path. Inclusions of a second crystalline phase are contained in the semiconductor and have an electrical conductivity higher than the first phase. The inclusions are orientated substantially perpendicular to the current flow in the semiconductor response to the radiation. Two magnetic structures are disposed one behind the other laterally of the semiconductor along its longitudinal dimension and have respective magnetic fields which penetrate the semiconductor in mutually opposite directions.

    Abstract translation: 用于检测从沿着路径移动的源发出的辐射的装置具有第一结晶相的细长的辐射敏感的电子半导体。 半导体可基本平行于路径定位。 半导体中包含第二结晶相，并且具有比第一相高的导电性。 夹杂物的取向基本上垂直于半导体对辐射的响应中的电流。 两个磁性结构沿其纵向尺寸设置在半导体的另一个侧面之后，并且具有相互相反的方向穿过半导体的各自的磁场。

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