Photo-curing polysiloxane composition and protective film formed from the same
    37.
    发明授权
    Photo-curing polysiloxane composition and protective film formed from the same 有权
    光固化聚硅氧烷组合物和由其形成的保护膜

    公开(公告)号:US08546061B2

    公开(公告)日:2013-10-01

    申请号:US13291305

    申请日:2011-11-08

    CPC classification number: G03F7/0233 G03F7/0007 G03F7/0757 G03F7/40

    Abstract: A photo-curing polysiloxane composition includes a polysiloxane, an o-naphthoquinonediazidesulfonate compound, and a solvent. The polysiloxane contains 25 wt % to 60 wt % of a polysiloxane fraction having a molecular weight ranging from 10,000 to 80,000 based on a total weight of the polysiloxane when calculated from an integral molecular weight distribution curve obtained by plotting cumulative weight percentage versus molecular weight falling within a range between 400 and 100,000 measured by gel permeation chromatography. The amount of oligomers in the polysiloxane having a molecular weight less than 800 is from 0 wt % to 10 wt % based on a total weight of the photo-curing polysiloxane composition. A protective film formed from the photo-curing polysiloxane composition and an element containing the protective film are also disclosed.

    Abstract translation: 光固化聚硅氧烷组合物包括聚硅氧烷,邻萘醌二叠氮化物磺酸盐化合物和溶剂。 聚硅氧烷含有25重量%至60重量%的聚硅氧烷部分,其分子量范围为10,000至80,000,基于聚硅氧烷的总重量,当通过绘制累积重量百分比与分子量的下降而得到的整体分子量分布曲线 在通过凝胶渗透色谱法测量的范围在400和100,000之间。 基于光固化聚硅氧烷组合物的总重量,分子量小于800的聚硅氧烷中的低聚物的量为0重量%至10重量%。 还公开了由光固化聚硅氧烷组合物形成的保护膜和含有保护膜的元件。

    PHOTORESIST COMPOSITION AND METHOD OF FORMING A FINE PATTERN USING THE SAME
    39.
    发明申请
    PHOTORESIST COMPOSITION AND METHOD OF FORMING A FINE PATTERN USING THE SAME 审中-公开
    光刻胶组合物和使用其形成微细图案的方法

    公开(公告)号:US20130048604A1

    公开(公告)日:2013-02-28

    申请号:US13568233

    申请日:2012-08-07

    CPC classification number: G03F7/0392 G03F7/0045 G03F7/0046 G03F7/11

    Abstract: A photoresist composition includes from about 20% to about 50% by weight of a polymer, from about 0.5% to about 1.5% by weight of a photo-acid generator, from about 0.01% to about 0.5% by weight of a photo absorber and the remainder includes an organic solvent. Also provided is a method of forming a fine pattern including forming a thin film on a substrate; forming a photoresist pattern by using a photoresist composition that includes from about 20% to about 50% by weight of a polymer, from about 0.5% to about 1.5% by weight of a photo-acid generator, from about 0.01% to about 0.5% by weight of a photo absorber and a remainder comprising an organic solvent; and patterning the thin film by using the photoresist pattern as an etch-stop layer to form a fine pattern.

    Abstract translation: 光致抗蚀剂组合物包括约20重量%至约50重量%的聚合物,约0.5重量%至约1.5重量%的光酸产生剂,约0.01重量%至约0.5重量%的光吸收剂, 剩余部分包括有机溶剂。 还提供了形成包括在基板上形成薄膜的精细图案的方法; 通过使用光致抗蚀剂组合物形成光致抗蚀剂图案,所述光致抗蚀剂组合物包含约20重量%至约50重量%的聚合物,约0.5重量%至约1.5重量%的光酸产生剂,约0.01重量%至约0.5重量% 的光吸收剂,余量包含有机溶剂; 并通过使用光致抗蚀剂图案作为蚀刻停止层来图案化薄膜以形成精细图案。

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