公开(公告)号：US20030085356A1

公开(公告)日：2003-05-08

申请号：US10196577

申请日：2002-07-17

Inventor： Kazutoshi Kaji ,  Takashi Aoyama ,  Shunroku Taya ,  Hiroyuki Tanaka ,  Shigeto Isakozawa

IPC: H01J037/28 ,  G01N023/04

CPC classification number: G01N23/04 ,  G01N23/20 ,  H01J37/05 ,  H01J37/244 ,  H01J37/256 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/057 ,  H01J2237/24475 ,  H01J2237/24485 ,  H01J2237/24495 ,  H01J2237/2522 ,  H01J2237/2802 ,  H01J2237/2804 ,  H01J2237/2809

Abstract: An object of the present invention is to provide an ultimate analyzer which can display an element distribution image of an object to be analyzed with high contrast to determine the positions of the element distribution with high accuracy, and a scanning transmission electron microscope and a method of analyzing elements using the ultimate analyzer. The present invention exists in an ultimate analyzer comprising a scattered electron beam detector for detecting an electron beam scattered by an object to be analyzed; an electron spectrometer for energy dispersing an electron beam transmitted through the object to be analyzed; an electron beam detector for detecting said dispersed electron beam; and a control unit for analyzing elements of the object to be analyzed based on an output signal of the electron beam detected by the electron beam detector and an output signal of the electron beam detected by the scattered electron beam detector. Further, the present invention exists in a scanning transmission electron microscope comprising the above ultimate analyzer; an electron beam source; an electron beam scanning coil; a scattered electron beam detector; objective lenses; a focusing lens; a magnifying magnetic field lens; and a focus adjusting electromagnetic lens. Furthermore, the ultimate analyzer or the scanning transmission electron microscope may comprises a control unit which makes it possible that both of an image of element distribution and an STEM image detected and formed by the scatted electron beam detector are observed at a time in real time, and the image of element distribution is corrected by the STEM image detected and formed by the scattered electron beam detector.

公开(公告)号：US20030085353A1

公开(公告)日：2003-05-08

申请号：US09986137

申请日：2001-11-07

Inventor： Gilad Almogy ,  Oren Reches

IPC: H01J037/28

CPC classification number: H01J37/28 ,  H01J2237/024 ,  H01J2237/0635 ,  H01J2237/1503 ,  H01J2237/20228 ,  H01J2237/2817

Abstract: A high data-rate electron beam spot-grid array imaging system is provided that overcomes the low resolution and severe linearity requirements of prior art systems. Embodiments include an imaging system comprising an electron beam generator for simultaneously irradiating an array of spots spaced apart from each other on a surface of an object to be imaged, and a detector for collecting backscattered and/or secondary electrons emitted as a result of the interaction of the spots with the surface of the object to form an image of the irradiated portions of the object surface. A mechanical system moves the substrate in a direction which is nearly parallel to an axis of the array of spots such that as the substrate is moved across the spot array in the scan direction (the y-direction) the spots trace a path which leaves no gaps in the mechanical cross-scan direction (the x-direction). A compensator, such as a servo or a movable mirror, compensates for mechanical inaccuracies in the moving stage, thereby increasing imaging accuracy. In other embodiments, multiple detectors placed at different angles to the substrate collect electrons to provide multiple perspective imaging of the substrate surface.

Abstract translation: 提供了高数据速率电子束点阵阵列成像系统，其克服了现有技术系统的低分辨率和严格的线性要求。 实施例包括一种成像系统，包括电子束发生器，用于同时照射待成像物体的表面上彼此间隔开的点阵列，以及用于收集由于相互作用而发射的反向散射和/或二次电子的检测器 具有物体表面的斑点以形成物体表面的照射部分的图像。 机械系统使基板沿着几乎平行于点阵列的轴线的方向移动，使得当基板在扫描方向（y方向）上移动穿过光点阵列时，斑点追踪不留下的路径 机械横向扫描方向（x方向）的间隙。 诸如伺服或可移动镜的补偿器补偿了移动台中的机械不准确度，从而提高了成像精度。 在其他实施例中，以与衬底不同的角度放置的多个检测器收集电子以提供衬底表面的多个透视成像。

公开(公告)号：US20030010913A1

公开(公告)日：2003-01-16

申请号：US10161131

申请日：2002-05-29

Inventor： Erik Essers

IPC: H01J037/28 ,  H01J037/244

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J2237/2608

Abstract: A detector for scanning electron microscopes with high pressure in the sample chamber has a first electrode for accelerating electrons emergent from a sample received on the sample holder, and at least one second electrode, the end of which directed toward the sample holder is at a smaller distance from the sample holder than the first electrode, and is at a potential between the potential of the first electrode and the potential of the beam guiding tube. The volume of the secondary electron cascade is increased by the second electrode. In an alternative embodiment for a gas scintillation detector, there is adjoined to a region of high secondary electron amplification, an elongate region in which the amplification factor for secondary electrons is approximately 1. The first region serves for the production of a relatively large electron current and the second, elongate, region for the production of a strong photon signal while maintaining the photon current.

Abstract translation: 用于在样品室中扫描高压的电子显微镜的检测器具有用于加速从接收在样品保持器上的样品发出的电子的第一电极，并且至少一个第二电极，其端部朝向样品架保持器的一端较小 距离样品保持器的距离小于第一电极，并且处于第一电极的电位和光束引导管的电位之间的电位。 二次电子级联的体积由第二电极增加。 在气体闪烁检测器的替代实施例中，邻接于二次电子放大的区域，其中二次电子的放大因子约为1的细长区域。第一区域用于产生相对较大的电子电流 和第二个细长的区域，用于生产强光子信号，同时保持光子电流。

公开(公告)号：US20020185598A1

公开(公告)日：2002-12-12

申请号：US09878580

申请日：2001-06-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Reginald R. Bowley JR. ,  Emily E. Fisch ,  Debra L. Meunier

IPC: H01J037/28

CPC classification number: G03F7/70625 ,  G01B15/04 ,  H01J2237/2814

Abstract: A method and system for measuring lithographic image foreshortening. The method comprises the steps of providing a critical dimension scanning electron microscope, and using that critical dimension scanning electron microscope to measure lithographic image foreshortening. Preferably, a defined feature is formed using a lithographic process, and the critical dimension scanning electron microscope is used to measure foreshortening of that feature. For example, the feature may be a line, and the critical dimension scanning electron microscope may be used to measure foreshortening of the line. Also, the feature may be two arrays of lines, and the critical dimension scanning electron microscope may be used to measure the separation distance between the arrays. That separation distance may be used to determine a focus of the lithographic process.

Abstract translation: 用于测量平版印刷图像缩小的方法和系统。 该方法包括提供临界尺寸扫描电子显微镜，并使用临界尺寸扫描电子显微镜测量平版印刷图像缩小。 优选地，使用光刻工艺形成限定的特征，并且使用临界尺寸扫描电子显微镜来测量该特征的缩短。 例如，该特征可以是线，并且临界尺寸扫描电子显微镜可以用于测量线的缩短。 此外，该特征可以是两个线阵列，并且临界尺寸扫描电子显微镜可以用于测量阵列之间的间隔距离。 该分离距离可用于确定光刻工艺的焦点。

公开(公告)号：US20020130260A1

公开(公告)日：2002-09-19

申请号：US09912732

申请日：2001-07-23

Applicant: KLA-Tencor Technologies Corporation

Inventor： Mark A. McCord ,  David Walker ,  Jun Pei ,  Neil Richardson

IPC: H01J037/256 ,  H01J037/28 ,  G01N023/225

CPC classification number: H01J37/28 ,  G01N23/225 ,  H01J2237/004 ,  H01J2237/2817

Abstract: Disclosed are methods and apparatus for simultaneously flooding a sample (e.g., a semiconductor wafer) to control charge and inspecting the sample. The apparatus includes a charged particle beam generator arranged to generate a charged particle beam substantially towards a first portion of the sample and a flood gun for generating a second beam towards a second portion of the sample. The second beam is generated substantially simultaneously with the inspection beam. The apparatus further includes a detector arranged to detect charged particles originating from the sample portion. In a further implementation, the apparatus further includes an image generator for generating an image of the first portion of the sample from the detected particles. In one embodiment, the sample is a semiconductor wafer. In a method aspect, a first area of a sample is flooded with a flood beam to control charge on a surface of the sample. A second area of the sample is inspected with an inspection beam. The second area comprises at least a portion of the first area flooded by the flood beam. The inspection beam moves in tandem with the flood beam. In another aspect of the present invention, methods and apparatus are provided for controlling the charge buildup of an area of the sample by an electrode having a voltage applied to it and through which the flood beam and charged particles emitted from the area of the sample can pass.

Abstract translation: 公开了用于同时淹没样品（例如，半导体晶片）以控制电荷并检查样品的方法和装置。 该装置包括带电粒子束发生器，其布置成基本上朝向样品的第一部分产生带电粒子束，以及用于产生朝向样品的第二部分的第二束的泛喷枪。 第二光束基本上与检查光束同时产生。 该装置还包括检测器，其被布置成检测源自样品部分的带电粒子。 在另一实施方式中，该装置还包括图像发生器，用于从检测到的粒子生成样品的第一部分的图像。 在一个实施例中，样品是半导体晶片。 在方法方面，样品的第一区域用泛光束淹没以控制样品表面上的电荷。 用检查梁检查样品的第二个区域。 第二区域包括由洪水束淹没的第一区域的至少一部分。 检查梁与洪水束一起移动。 在本发明的另一方面，提供了一种方法和装置，用于通过施加有电压的电极来控制样品区域的电荷积累，通过该电极，从样品区域发射的泛光束和带电粒子可以 通过。

公开(公告)号：US20020117619A1

公开(公告)日：2002-08-29

申请号：US09943394

申请日：2001-08-30

Inventor： Yasuhiro Gunji ,  Taku Ninomiya ,  Masatsugu Kametani ,  Masahiro Koyama ,  Kenjiro Yamamoto

IPC: H01J037/28

CPC classification number: H01J37/28 ,  H01J2237/2817

Abstract: The present invention aims to prevent degradation in performance due to a change in image quality and deflection distortions or the like in the vicinity of both ends of a scan area and detect a defect in a sample such as a semiconductor wafer or the like with high accuracy when the defect is inspected by use of an electron beam image, and allow a monitor to confirm an image area to be checked. The present invention is provided with means for comparing and checking defects in the sample, based on an image signal in which the neighborhoods of both ends of horizontal and vertical scan areas are respectively deleted under control of a blanking signal and a vertical synchronizing signal.

Abstract translation: 本发明旨在防止由于扫描区域两端附近的图像质量和偏转失真等的变化而导致的性能下降，并以高精度检测诸如半导体晶片等的样品中的缺陷 当通过使用电子束图像检查缺陷时，并且允许监视器确认要检查的图像区域。 本发明提供了用于基于在消隐信号和垂直同步信号的控制下分别删除水平和垂直扫描区域的两端的相邻区域的图像信号来比较和检查样本中的缺陷的装置。

公开(公告)号：US20020092986A1

公开(公告)日：2002-07-18

申请号：US10083481

申请日：2002-02-27

Inventor： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

IPC: H01J037/28

CPC classification number: H01J37/28 ,  G01N23/20 ,  G01N23/2251 ,  G03F7/7065 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01J37/04 ,  H01J37/20 ,  H01J37/265 ,  H01J2237/04756 ,  H01J2237/20221 ,  H01J2237/2444 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01J2237/31766

Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

Abstract translation: 通过提供新颖的检查方法和采用这种新方法的检测装置，本发明通过使用电子束的本发明解决了常规检查方法中遇到的问题和采用该方法的传统装置，该方法能够提高扫描样本的速度 作为半导体晶片。 本发明提供的检验新颖方法包括以下步骤：产生电子束; 通过使用物镜将生成的电子束会聚在样品上; 使用会聚电子束扫描样品; 扫描期间连续移动样品; 检测在样本和物镜之间的位置处从样本发出的带电粒子，并将检测到的带电粒子转换成电信号; 存储由电信号传送的图像信息; 通过使用所存储的图像信息将图像与另一图像进行比较; 并检测样本的缺陷。

公开(公告)号：US20020088940A1

公开(公告)日：2002-07-11

申请号：US09985317

申请日：2001-11-02

Inventor： Kenji Watanabe ,  Hirosi Sobukawa ,  Nobuharu Noji ,  Tohru Satake ,  Shoji Yoshikawa ,  Tsutomu Karimata ,  Mamoru Nakasuji ,  Masahiro Hatakeyama ,  Takeshi Murakami ,  Yuichiro Yamazaki ,  Ichirota Nagahama ,  Takamitsu Nagai ,  Kazuyoshi Sugihara

IPC: H01J037/28

CPC classification number: H01J37/28 ,  H01J37/224 ,  H01J37/244 ,  H01J2237/006 ,  H01J2237/20221 ,  H01J2237/2445 ,  H01J2237/2817

Abstract: An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.

Abstract translation: 图像投影型的电子束检查系统包括用于将从电子枪发射的电子束成形为矩形构造的一次电子光学系统，并将成形的电子束施加到要检查的样品表面。 二次电子光学系统收敛从样品发射的二次电子。 检测器通过荧光屏将会聚的二次电子转换成光学图像，并将图像聚焦到线传感器。 一个控制器控制线传感器的电荷转移时间，该线传感器在行传感器中设置的每对相邻像素行之间与用于移动样本的平台的移动速度相关联地传送拾取线图像。

公开(公告)号：US20020005484A1

公开(公告)日：2002-01-17

申请号：US09899018

申请日：2001-07-06

Applicant: NIKON CORPORATION

Inventor： Hiroshi Nishimura

IPC: H01J037/28 ,  G01N023/225

CPC classification number: H01J37/28 ,  G01N23/225 ,  H01J2237/2817

Abstract: A main control system 34 prepares, in advance, a voltage map showing the amount of focus deviation of a secondary electron beam B2 at a detection surface of an electron beam detector 30 corresponding with the amount of charge-up generated on a sample 4 upon irradiation with a primary electron beam B1, and stores this voltage map in a storage device 43. During an observation, the main control system 34 reads the voltage map stored in the storage device 43 and corrects the focal position of the secondary electron beam B2 by controlling either the voltage applied to the secondary optical system 20 or the voltage applied to the sample 4. As a result, focal position deviations resulting from charge-up generated on the sample being observed can be corrected without causing inconvenience to an operator.

Abstract translation: 主控制系统34预先准备电压图，该电压图示出了与照射时在样品4上产生的充电量相对应的电子束检测器30的检测表面处的二次电子束B2的聚焦偏差量 一次电子束B1，并将该电压图存储在存储装置43中。在观察期间，主控制系统34读取存储在存储装置43中的电压图，并通过控制来校正二次电子束B2的焦点位置 施加到二次光学系统20的电压或施加到样品4的电压。结果，可以校正在观察到的样品上产生的充电产生的焦点位置偏差，而不会给操作者带来不便。

公开(公告)号：US20040188612A1

公开(公告)日：2004-09-30

申请号：US10817834

申请日：2004-04-06

Applicant: HITACHI, LTD

Inventor： Yoichi Ose ,  Hideo Todokoro ,  Makoto Ezumi ,  Mitsugu Sato

IPC: H01J037/28

CPC classification number: H01J37/147 ,  H01J37/1471 ,  H01J37/153 ,  H01J37/28 ,  H01J2237/12 ,  H01J2237/14 ,  H01J2237/1516 ,  H01J2237/244 ,  H01J2237/2817

Abstract: The present invention is intended to prevent the deterioration of resolution due to increase in off-axis aberration resulting from the deviation of a primary electron bean from the optical axis of a scanning electron microscope. A scanning electron microscope is provided with an image shifting deflector system including two deflectors disposed respectively at upper and lower stages. The deflector disposed at the lower stage is a multipole electrostatic deflecting electrode and is disposed in an objective. Even if the distance of image shifting is great, an image of a high resolution can be formed and dimensions can be measured in a high accuracy. The SEM is able to achieving precision inspection at a high throughput when applied to inspection in semiconductor device fabricating processes that process a wafer having a large area and provided with very minute circuit elements.

Abstract translation: 本发明旨在防止由于一次电子束与扫描型电子显微镜的光轴的偏离引起的离轴像差的增加而导致的分辨率的劣化。 扫描电子显微镜设置有分别设置在上部和下部的两个偏转器的图像偏转偏转器系统。 设置在下级的偏转器是多极静电偏转电极，并且设置在物镜中。 即使图像偏移的距离大，也可以形成高分辨率的图像，并且可以高精度地测量尺寸。 当在用于处理具有大面积的晶片并且具有非常微小的电路元件的半导体器件制造工艺中进行检查时，SEM能够以高产量实现精密检查。