公开(公告)号：US20050179026A1

公开(公告)日：2005-08-18

申请号：US10781212

申请日：2004-02-17

Applicant: Timothy Myers ,  John Chen ,  Chien-Hua Chen

Inventor： Timothy Myers ,  John Chen ,  Chien-Hua Chen

IPC: H01J1/05 ,  H01J1/312 ,  H01J9/02 ,  H01J31/12 ,  H01L31/0328 ,  H01L31/072

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J9/022 ,  H01J31/123

Abstract: A photonic assisted emitter including an at least partially transparent electron source layer, a thin metal layer; and a tunneling layer disposed between said at least partially transparent electron source layer and said thin metal layer.

Abstract translation: 一种光子辅助发射器，包括至少部分透明的电子源层，薄金属层; 以及设置在所述至少部分透明的电子源层和所述薄金属层之间的隧道层。

公开(公告)号：US06891320B2

公开(公告)日：2005-05-10

申请号：US09987862

申请日：2001-11-16

Applicant: Masayuki Nakamoto

Inventor： Masayuki Nakamoto

IPC: H01J1/30 ,  H01J1/05 ,  H01J1/14 ,  H01J1/304 ,  H01J1/62 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J1/3048 ,  B82Y10/00 ,  B82Y30/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30469 ,  H01J2329/00 ,  Y10S977/939

Abstract: A field emission cold cathode device of a lateral type includes a cathode electrode and gate electrode disposed on a major surface of a support substrate laterally side by side. The cathode electrode and gate electrode have side surfaces which oppose each other, and an emitter is disposed on the opposite side surface of the cathode electrode. The emitter includes a metal plating layer formed on the cathode electrode, and a plurality of granular or rod-shaped micro-bodies. The micro-bodies are consisting essentially of a material selected from the group consisting of fullerenes, carbon nanotubes, graphite, a material with a low work function, a material with a negative electron affinity, and a metal material, and are supported in the metal plating layer in a dispersed state.

Abstract translation: 横向型的场致发射冷阴极器件包括侧向并排设置在支撑基板的主表面上的阴极电极和栅极电极。 阴极电极和栅电极具有彼此相对的侧表面，并且发射极设置在阴极的相对侧表面上。 发射极包括在阴极上形成的金属镀层，以及多个粒状或棒状的微型体。 微体基本上由选自富勒烯，碳纳米管，石墨，低功函数的材料，具有负电子亲和性的材料和金属材料组成的组合物组成，并且被支撑在金属中 电镀层处于分散状态。

公开(公告)号：US6064075A

公开(公告)日：2000-05-16

申请号：US196263

申请日：1998-11-19

Applicant: David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

Inventor： David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

IPC: H01J1/05 ,  H01J9/02 ,  H01L21/00 ,  H01L21/4763 ,  H01L29/06

CPC classification number: H01J3/021 ,  H01J29/467 ,  H01J31/127 ,  H01J9/148 ,  H01J2203/0232 ,  H01J2329/463

Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

Abstract translation: 半导体器件可以通过在诸如用于形成场致发射显示器的提取器的硅材料上形成硅化物层而制成。 硅化物层可以与场发射显示器的发射极自对准。 如果通过暴露于氮源在高于1000℃的温度下处理硅化物层，则硅化物对随后的化学侵蚀（例如涉及缓冲氧化物蚀刻工艺）是有抗性的。

公开(公告)号：US6024620A

公开(公告)日：2000-02-15

申请号：US196302

申请日：1998-11-19

Applicant: David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

Inventor： David A. Cathey, Jr. ,  John K. Lee ,  Tianhong Zhang ,  Behnam Moradi

IPC: H01J1/05 ,  H01J9/02 ,  H01L21/00 ,  H01L21/4763 ,  H01L29/06

CPC classification number: H01J3/021 ,  H01J29/467 ,  H01J31/127 ,  H01J9/148 ,  H01J2203/0232 ,  H01J2329/463

Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

公开(公告)号：US5869922A

公开(公告)日：1999-02-09

申请号：US910604

申请日：1997-08-13

Applicant: Zhidan Li Tolt

Inventor： Zhidan Li Tolt

IPC: C01B31/02 ,  B01J19/00 ,  C23C16/26 ,  H01J1/02 ,  H01J1/05 ,  H01J1/30 ,  H01J1/304 ,  H01J29/04 ,  H01J31/12 ,  H01L29/78

CPC classification number: C23C16/26 ,  H01J1/304 ,  H01J31/127 ,  H01J2201/30453 ,  H01J2329/0444

Abstract: A carbon film used for a field emission cathode comprises a layer of thin carbon film on a substrate. With 244 nm and 2-7 mW excitation, and within the wave number from 1100 to 1850 cm.sup.-1, the carbon film has a distinct UV Raman band in the range from 1578 cm.sup.-1 to 1620 cm.sup.-1 with a full width at half maximum from 25 to 165 cm.sup.-1. The carbon film can be deposited by chemical vapor deposition, physical vapor deposition, electrolysis, printing or painting, and can be continuous or noncontinuous.

Abstract translation: 用于场发射阴极的碳膜包括在基板上的薄碳膜层。 具有244nm和2-7mW激发，并且在1100至1850cm -1的波数内，碳膜具有在1578cm -1至1620cm -1范围内的不同的UV拉曼带，全宽为 从25到165厘米-1的最大值。 碳膜可以通过化学气相沉积，物理气相沉积，电解，印刷或喷涂沉积，并且可以是连续的或非连续的。

公开(公告)号：US5773921A

公开(公告)日：1998-06-30

申请号：US702684

申请日：1996-08-23

Applicant: Till Keesmann ,  Hubert Grosse-Wilde

Inventor： Till Keesmann ,  Hubert Grosse-Wilde

IPC: H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J1/05

CPC classification number: H01J1/3042 ,  B82Y10/00 ,  H01J2201/30423 ,  H01J2201/30469 ,  Y10S977/876 ,  Y10S977/939

Abstract: A field emission cathode device consisting of an electrically conducting material and with a narrow, rod-shaped geometry or a knife edge, to achieve a high amplification of the electric field strength is characterized in that the electron-emitting part of the field emission cathode at least partly has preferred cylindrical host molecules and/or compounds with host compounds and/or cylindrical atomic networks, possibly with end caps with diameters measuring in the nanometer range.

Abstract translation: PCT No.PCT / DE95 / 00221 Sec。 371日期：1996年8月23日 102（e）日期1996年8月23日PCT提交1995年2月22日PCT公布。 出版物WO95 / 23424 PCT 日期1995年8月31日一种由导电材料和狭窄的棒状几何形状或刀刃组成的场发射阴极器件，以实现电场强度的高放大，其特征在于，电子发射部分 场发射阴极至少部分地具有优选的具有主体化合物和/或圆柱形原子网络的圆柱形主体分子和/或化合物，可能具有直径在纳米范围内的端盖。

公开(公告)号：US4629931A

公开(公告)日：1986-12-16

申请号：US673466

申请日：1984-11-20

Applicant: William M. Clark, Jr. ,  Charles M. McKenna ,  William L. Johnson

Inventor： William M. Clark, Jr. ,  Charles M. McKenna ,  William L. Johnson

IPC: H01J27/26 ,  H01J37/08 ,  H01J1/05

CPC classification number: H01J37/08 ,  H01J27/26

Abstract: A liquid metal ion source alloy for high vapor pressure metalloids, wherein the alloy composition is chosen to have a low melting point so that the vapor pressure of the volatile constituents is low, even in the liquid state. Specifically, the ion source alloy is an alloy selected from the group of (Pb.sub.0.7-1.0 Au.sub.0.3-0).sub.0.7-0.99 (As+Sb).sub.0.3-0.01 and Pb.sub.0.20-0.30 Au.sub.0.45-0.55 (As+Sb).sub.0.20-0.30. The melting points of these alloys are about 200.degree. C.-300.degree. C., and the alloys may be maintained molten in contact with the emission elements for long periods of time without significant loss of the volatile species or reactivity with typical substrate materials used for emission elements.

Abstract translation: 一种用于高蒸气压准金属的液态金属离子源合金，其中选择合金组成具有低熔点，使得挥发性成分的蒸气压甚至在液态下也是低的。 具体地说，离子源合金是选自（Pb0.7-1.0 Au0.3-0）0.7-0.99（As + Sb）0.3-0.01和Pb0.20-0.30 Au0.45-0.55（As + Sb）0.20-0.30。 这些合金的熔点为约200℃-300℃，并且可以将合金长时间保持熔融与发射元件接触，而不会显着损失挥发物质或与所使用的典型基底材料的反应性 用于排放要素。

公开(公告)号：US3798490A

公开(公告)日：1974-03-19

申请号：US3798490D

申请日：1972-09-01

Applicant: GEN ELECTRIC

Inventor： ACKERMAN S ,  DUNHAM T

IPC: C22C27/04 ,  H01K1/04 ,  H01K1/08 ,  H01J1/05 ,  H01J1/14 ,  H01J1/38 ,  H01J1/48 ,  H01J19/06

CPC classification number: H01K1/04

Abstract: An incandescent lamp having a filament made of tungsten wire containing between 1-2 percent by weight thoria has greatly improved resistance to fracture caused by shock and vibration thereby increasing the service life of the lamp. The thoriated tungsten filament has a recrystallized grain structure which is characterized by approximately equiaxed crystals of tungsten of a smaller and more uniform size and thoria particles which are more uniformly distributed throughout the tungsten matrix than can be obtained by conventional powder metallurgy.

Abstract translation: 具有含有1-2重量％的钍的钨丝制成的灯丝的白炽灯大大改善了由冲击和振动引起的断裂耐受性，从而增加了灯的使用寿命。 钍钨丝具有再结晶晶粒结构，其特征在于具有更小和更均匀尺寸的钨的近似等轴晶体和比通过常规粉末冶金可获得的更均匀分布在钨基体上的氧化钍颗粒。

公开(公告)号：US3497755A

公开(公告)日：1970-02-24

申请号：US56214166

申请日：1966-07-01

Applicant: GEN ELECTRIC

Inventor： HORN FORDYCE H

IPC: H01H33/66 ,  H01H1/02 ,  H01H1/025 ,  H01H33/664 ,  H01J9/385 ,  H01J1/05

CPC classification number: H01H33/664 ,  H01H1/0203 ,  H01J9/385

公开(公告)号：US09490097B2

公开(公告)日：2016-11-08

申请号：US15065136

申请日：2016-03-09

Applicant: Elwha LLC

Inventor： Roderick A. Hyde ,  Jordin T. Kare ,  David B. Tuckerman ,  Thomas A. Weaver ,  Lowell L. Wood, Jr. ,  Richard N. Zare

IPC: H01J1/06 ,  H01J13/10 ,  H01J1/05 ,  H01K1/08 ,  H01K1/10 ,  H01K1/14 ,  H01K1/50 ,  H01K1/62 ,  H05B39/02

CPC classification number: H05B39/04 ,  H01J1/05 ,  H01J1/06 ,  H01J13/10 ,  H01K1/08 ,  H01K1/10 ,  H01K1/14 ,  H01K1/28 ,  H01K1/50 ,  H01K1/58 ,  H01K1/62 ,  H01K5/00 ,  H05B39/02

Abstract: A filament for a light bulb includes a tube and a filament material within the tube, wherein the filament material is configured to be in a liquid state while the light bulb is in use.

Abstract translation: 用于灯泡的灯丝包括在管内的管和细丝材料，其中灯丝材料构造成在使用灯泡时处于液体状态。