公开(公告)号：US20200040481A1

公开(公告)日：2020-02-06

申请号：US16600859

申请日：2019-10-14

申请人： CHANGZHOU UNIVERSITY ,  JIANGSU UNIVERSITY

发明人： Jianning DING ,  Ningyi YUAN ,  Jiawei XU ,  Dapeng SHEN ,  Xiaodong XU ,  Tao SUN ,  Shubo WANG

IPC分类号： C30B15/06 ,  C30B15/00 ,  C30B15/02 ,  C30B29/06

摘要： A silicon wafer horizontal growth apparatus comprises a casing forming a cavity; a crucible within the cavity and having a melting zone, an overflow port, a first and a second overflow surface; a feeding assembly for adding raw material to the melting zone at an adjustable rate; a heating assembly comprising two movable heaters disposed on the upper and lower sides of the crucible at an interval; a thermal insulation component for maintaining a temperature in the cavity; a gas flow assembly comprising a jet located above the second overflow surface, a gas conductive graphite member mounted on the bottom of the crucible, a quartz exhaust tube connected with the gas conductive graphite member, and a quartz cooling tube outside the exhaust tube; and a heat insulating baffle located above the second overflow surface for isolating the heating assembly from the jet, dividing the cavity into hot and cold zones.

公开(公告)号：US10202704B2

公开(公告)日：2019-02-12

申请号：US13651981

申请日：2012-10-15

申请人： GTAT IP HOLDING LLC

发明人： William L. Luter ,  Verlin A. Lauher ,  Dick S. Williams ,  Howard P. Zinschlag ,  Neil Middendorf ,  David J. Dubiel

IPC分类号： C30B15/00 ,  C30B15/12 ,  C30B29/06

摘要： A Czochralski growth system is described comprising a growth chamber, a feed port, and a feed chamber comprising a container for feedstock and a feeder. The feed port is disposed in at least one side wall of the growth chamber, and the feed chamber is attached to the growth chamber at the feed port. The feeder is insertable into the growth chamber through the feed port and supplies the feedstock into the growth chamber. Preferably this system can be used for producing silicon ingots using a continuous Czochralski method.

公开(公告)号：US10192754B2

公开(公告)日：2019-01-29

申请号：US15311307

申请日：2015-04-21

申请人： SUMCO CORPORATION

发明人： Jun Fujise ,  Toshiaki Ono

IPC分类号： H01L21/322 ,  H01L29/32 ,  C30B15/20 ,  C30B33/02 ,  C30B15/00

摘要： A method for producing an epitaxial silicon wafer, including a preliminary thermal treatment step of subjecting a silicon wafer to thermal treatment for increasing a density of oxygen precipitates, the silicon wafer being one that has an oxygen concentration in a range of 9×1017 atoms/cm3 to 16×1017 atoms/cm3, contains no dislocation cluster and no COP, and contains an oxygen precipitation suppression region, and an epitaxial layer forming step of forming an epitaxial layer on a surface of the silicon wafer after the preliminary thermal treatment step. The production method further includes a thermal treatment condition determining step of determining a thermal treatment condition in the preliminary thermal treatment step, based on a ratio of the oxygen precipitation suppression region of the silicon wafer before the preliminary thermal treatment step is carried out.

公开(公告)号：US20180273299A1

公开(公告)日：2018-09-27

申请号：US15781505

申请日：2016-12-12

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Wataru YAJIMA

IPC分类号： B65G1/16 ,  C30B15/00 ,  C30B29/06

CPC分类号： B65G1/16 ,  C30B15/00 ,  C30B15/02 ,  C30B29/06

摘要： A recharge tube stocker for storing and managing a recharge tube used for a single crystal pulling apparatus, including an inlet-outlet section for taking the recharge tube in the recharge tube stocker and taking the recharge tube out of the recharge tube stocker, a storage for storing the recharge tube, a raw-material charging device for charging the recharge tube with a raw material, a weighing device for weighing a weight of the raw material charged into the recharge tube, a transferring device for enabling a transfer of the recharge tube, being taken in through the inlet-outlet section, among the inlet-outlet section, the raw-material charging device, and the storage, and a managing device for collectively managing storage information on the recharge tube stored in the storage. This recharge tube stocker stores and manages tubes in a space saving manner without taking time for searching and without causing mix-up of recharge tubes.

公开(公告)号：US10066312B2

公开(公告)日：2018-09-04

申请号：US15262138

申请日：2016-09-12

申请人： International Business Machines Corporation

发明人： Mikael T. Bjoerk ,  Heike E. Riel ,  Heinz Schmid

IPC分类号： C30B15/08 ,  C30B11/10 ,  C30B11/12 ,  C30B13/18 ,  H01L31/18 ,  C30B11/00 ,  C30B11/02 ,  C30B15/00 ,  C30B21/06 ,  C30B29/06 ,  C30B29/64 ,  H01L31/0312 ,  H01L31/036

摘要： A method for producing a mono-crystalline sheet includes providing at least two aperture elements forming a gap in between; providing a molten alloy including silicon in the gap; providing a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; providing a silicon nucleation crystal in the vicinity of the molten alloy; and bringing in contact said silicon nucleation crystal and the molten alloy. A device for producing a mono-crystalline sheet includes at least two aperture elements at a predetermined distance from each other, thereby forming a gap, and being adapted to be heated for holding a molten alloy including silicon by surface tension in the gap between the aperture elements; a precursor gas supply supplies a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; and a positioning device for holding and moving a nucleation crystal in the vicinity of the molten alloy.

公开(公告)号：US20180246231A1

公开(公告)日：2018-08-30

申请号：US15965079

申请日：2018-04-27

申请人： JAN KUBAT ,  JAN POLAK ,  MARTIN KLEJCH ,  TOMAS MAREK

发明人： JAN KUBAT ,  JAN POLAK ,  MARTIN KLEJCH ,  TOMAS MAREK

IPC分类号： G01T1/202 ,  C30B29/24 ,  C01F17/00 ,  C09K11/77 ,  C30B15/00 ,  C30B33/02 ,  E21B49/00 ,  G01V5/10

CPC分类号： G01T1/2023 ,  C01F17/0025 ,  C01P2002/34 ,  C09K11/7706 ,  C09K11/7774 ,  C30B15/00 ,  C30B29/24 ,  C30B33/02 ,  E21B47/00 ,  E21B49/00 ,  G01T1/202 ,  G01T1/2026 ,  G01V5/045 ,  G01V5/101 ,  Y10T428/29

摘要： A single crystal yttrium aluminum perovskite scintillator has a minimum thickness of at least 5 mm and a transmittance of at least 50% at a wavelength of 370 nm. A method for fabricating the yttrium aluminum perovskite scintillator includes acquiring a yttrium aluminum perovskite single crystal boule, annealing the yttrium aluminum perovskite single crystal boule in an oxygen containing environment to obtain a partially annealed crystal, and annealing the partially annealed crystal in an inert environment or a reducing environment to obtain the yttrium aluminum perovskite single crystal scintillator.

公开(公告)号：US10047456B2

公开(公告)日：2018-08-14

申请号：US14717970

申请日：2015-05-20

申请人： University of Houston System

发明人： P. Shiv Halasyamani ,  Weiguo Zhang

IPC分类号： C30B15/36 ,  C30B9/06 ,  C30B15/00 ,  C30B17/00 ,  C30B29/22 ,  C30B11/00 ,  C30B29/10 ,  H01M4/58 ,  C30B29/30

摘要： A monolithic crystal having the atomic formula WnXmYpZr, with at least one dimension greater than about 10 mm. A method for top seed, solution growth of a monolithic crystal, wherein the method includes the steps of: preparing a precursor, forming a seed crystal, and forming the monolithic crystal. Some configurations of the method include the differential control of the crystal flux temperature in a furnace and the rotational frequency of a seed crystal in the crystal flux.

公开(公告)号：US09970125B2

公开(公告)日：2018-05-15

申请号：US13398884

申请日：2012-02-17

申请人： Brian H. Mackintosh ,  Peter L. Kellerman ,  Dawei Sun

发明人： Brian H. Mackintosh ,  Peter L. Kellerman ,  Dawei Sun

IPC分类号： C30B15/20 ,  C30B15/00 ,  C30B15/14 ,  C30B15/06 ,  C30B29/06

CPC分类号： C30B15/14 ,  C30B15/06 ,  C30B29/06 ,  Y10T117/1008 ,  Y10T117/1044 ,  Y10T117/1048 ,  Y10T117/1068

摘要： An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.

公开(公告)号：US09945048B2

公开(公告)日：2018-04-17

申请号：US13525041

申请日：2012-06-15

申请人： Sen-Hong Syue ,  Pu-Fang Chen ,  Shiang-Bau Wang

发明人： Sen-Hong Syue ,  Pu-Fang Chen ,  Shiang-Bau Wang

IPC分类号： C30B15/04 ,  H01L21/02 ,  C30B15/20 ,  C30B31/02 ,  C30B31/04 ,  H01L21/311 ,  C30B15/22 ,  H01L29/36 ,  H01L21/762 ,  C30B31/16 ,  H01L21/3105 ,  C30B29/06 ,  H01L21/322 ,  C30B15/00 ,  C30B33/00 ,  H01L29/78

CPC分类号： C30B15/04 ,  C30B15/00 ,  C30B15/203 ,  C30B15/206 ,  C30B15/22 ,  C30B29/06 ,  C30B31/02 ,  C30B31/04 ,  C30B31/165 ,  C30B33/00 ,  H01L21/0201 ,  H01L21/31053 ,  H01L21/311 ,  H01L21/3225 ,  H01L21/76224 ,  H01L29/365 ,  H01L29/78

摘要： A system and method for providing support to semiconductor wafer is provided. An embodiment comprises introducing a vacancy enhancing material during the formation of a semiconductor ingot prior to the semiconductor wafer being separated from the semiconductor ingot. The vacancy enhancing material forms vacancies at a high density within the semiconductor ingot, and the vacancies form bulk micro defects within the semiconductor wafer during high temperature processes such as annealing. These bulk micro defects help to provide support and strengthen the semiconductor wafer during subsequent processing and helps to reduce or eliminate a fingerprint overlay that may otherwise occur.

公开(公告)号：US09909231B2

公开(公告)日：2018-03-06

申请号：US14559331

申请日：2014-12-03

申请人： HEMLOCK SEMICONDUCTOR CORPORATION

发明人： Arvid Neil Arvidson ,  Terence Lee Horstman ,  Michael John Molnar ,  Chris Tim Schmidt ,  Roger Dale Spencer, Jr.

IPC分类号： C30B15/02 ,  C30B15/00 ,  C30B29/06 ,  C30B11/00 ,  C30B15/04 ,  B07B1/46 ,  B07B13/04

CPC分类号： C30B15/002 ,  B07B1/4654 ,  B07B13/04 ,  C30B11/001 ,  C30B11/003 ,  C30B15/02 ,  C30B15/04 ,  C30B29/06 ,  Y10T117/1056

摘要： A method for recharging a crucible with polycrystalline silicon comprises adding flowable chips to a crucible used in a Czochralski-type process. Flowable chips are polycrystalline silicon particles made from polycrystalline silicon prepared by a chemical vapor deposition process, and flowable chips have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities. Flowable chips can be added to the crucible using conventional feeder equipment, such as vibration feeder systems and canister feeder systems.