摘要:
A defect observation method for observing a defect on a sample detected by another inspection device with a scanning electron microscope including the steps of: optically detecting the defect using the position information for the defect: illuminating the sample including the defect with an illumination intensity pattern having periodic intensity variation in two dimensions by irradiating a plurality of illumination light beams onto the surface of the sample while phase modulating the light beams in a single direction and successively moving the light beams in small movements in a direction different from the single direction, imaging the surface of the sample that is illuminated by the illumination intensity pattern having periodic intensity variation in two dimensions and includes the defect detected by the other inspection device, and detecting the defect detected by the other inspection device from the image obtained through the imaging of the surface of the sample.
摘要:
A method for monitoring a first nanometric structure formed by a multiple patterning process, the method may include performing a first plurality of measurements to provide a first plurality of measurement results; wherein the performing of the first plurality of measurements comprises illuminating first plurality of locations of a first sidewall of the first nanometric structure by oblique charged particle beams of different tilt angles; and processing, by a hardware processor, the first plurality of measurement results to determine a first attribute of the first nanometric structure.
摘要:
An undulation detection device includes a two-dimensional sensor configured to emit a sensing wave for distance measurement in a plurality of directions forming different lateral and vertical angles and to measure respective distances to objects from which the sensing wave is reflected, and a processor performs detecting an undulation of the measurement surface or an obstacle placed on the measurement surface from which the sensing wave is reflected, on the basis of a difference among the distances in the different directions, the difference being measured by the two-dimensional sensor, and outputting an undulation detection report, when an in-plane size of the undulation of the measurement surface or the obstacle placed on the measurement surface is equal to or more than a threshold.
摘要:
With filmless radiographic inspection of components by means of digital X-ray technology, an uneven surface geometry of the component is smoothened by defining a digital virtual smoothening layer for better, preferably automated, recognition of defects, where the digital radiation signals generated by an X-ray detector are overlaid with digitized surface measurement signals, so that a change in absorption and intensity of radiation due to the surface topography of the component, i.e. due to an uneven surface, is compensated for and only a density caused by internal material defects is represented in the X-ray image.
摘要:
There is provided a nondestructive method for inspecting ceramic structures, the method which not only easily detects the position and size of an internal defect in a ceramic structure in a short time, but also accurately identifies the position, shape, and size of the internal defect. In the method, the distribution of X-ray absorption coefficients (CT numbers) at fault planes of the ceramic structure is measured by irradiating the periphery of the ceramic structure with X rays along the periphery of the ceramic structure so that the X rays scan the entire periphery. The X rays are emitted from an X-ray tube at a tube voltage in the range of 80 to 400 kV and a tube current in the range of 2 to 400 mA.
摘要:
A circuit pattern inspection method and apparatus capable of readily setting an optimum threshold value while it is confirmed that a defect detected when a defect is checked can be detected at what threshold value and capable of forming a recipe easily. A circuit pattern inspection of irradiating an electron beam to a specimen formed with a circuit pattern on a surface thereof, forming an inspection image and a reference image in accordance with a secondary electron of a reflected electron from the specimen, and acquiring an abnormal portion from a difference between the inspection image and the reference image, wherein a plurality of characteristic quantities of the abnormal portion are obtained from an image of the abnormal portion, and the abnormal portion is selectively displayed by changing an inspection threshold value virtually set for the characteristic quantities.
摘要:
A method for determining a depression/protrusion, especially of a line and space pattern formed on a sample, and an apparatus therefor. A charged particle beam is scanned with its direction being inclined to the original optical axis of the charged particle beam or a sample stage is inclined, broadening of a detected signal in a line scanning direction of the charged particle beam is measured, the broadening is compared with that when the charged particle beam is scanned with its direction being parallel to the original optical axis of the charged particle beam, and a depression/protrusion of the scanned portion is determined on the basis of increase/decrease of the broadening.
摘要:
The shape of a sample is determined with a scanning electron microscope ("SEM") by using electron emission from a surface to measure its slope. A surface of a sample is placed in the SEM's electron beam for several known angles, and respective measurements of the electron emission are obtained. A relationship between surface angle and electron emission is derived for the sample from the measurements. Then, as the electron beam is scanned along the surface to measure electron emission, this derived relationship is used to obtain the slope at each scanning point.
摘要:
A spin-split scanning electron microscope (SSSEM) uses a spin-split electron beam interferometer to measure the difference between two electron beam paths. By measuring the difference in path lengths, and/or measuring changes in the relative difference between the two paths as the electron beams are scanned over a surface, the topology of an object's surface may be measured. The measuring changes in the relative difference between the two paths as a material etching or material deposition or growth process is performed, the amount of material added or removed from an object's surface may be metered. The spin-split scanning electron microscope includes an electron beam source that generates a flying stream of electrons, a spin-split electron beam splitter splits the flying stream of electrons into first and second electron beams having different trajectories, an electron beam intensity detector that receives a reflected portion of the first and second electron beams after they have been reflected from distinct positions of a target surface and generates an intensity signal indicative of the received beams combined intensity; and a controller coupled that receives the intensity signal, and analyzes changes in the intensity signal to determine relative changes in path lengths of the first and second electron beams. The beam splitter includes a magnetic field generator that generates a non-uniform magnetic field in region of space intercepted by the flying stream of electrons which causes electrons having opposite magnetic moments to be deflected into two separate electron beams.
摘要:
There is disclosed numerous embodiments of a method and apparatus for a particle scanning system and an automatic inspection system. In each of these a particle beam is directed at the surface of a substrate for scanning that substrate. Also included are a selection of detectors to detect at least one of the secondary particles, back-scattered particles and transmitted particles from the substrate. The substrate is mounted on an x-y stage to provide it with at least one degree of freedom while the substrate is being scanned by the/particle beam. The substrate is also subjected to an electric field on it's surface to accelerate the secondary particles. The system also has the capability to accurately measure the position of the substrate with respect to the charged particle beam. Additionally, there is an optical alignment means for initially aligning the substrate beneath the,particle beam means. To function most efficiently there is also a vacuum means for evacuating and repressurizing a chamber containing the substrate. The vacuum means can be used to hold one substrate at vacuum while a second one is being loaded/unloaded, evacuated or repressurized. Alternately, the vacuum means can simultaneously evacuate a plurality of substrates prior to inspection and repressurize of the same plurality of substrates following inspection. In the inspection configuration, there is also a comparison means for comparing the pattern on the substrate with a second pattern.