公开(公告)号：US10074606B2

公开(公告)日：2018-09-11

申请号：US15464487

申请日：2017-03-21

Applicant: STMicroelectronics, Inc.

Inventor： John Hongguang Zhang

IPC: H01L29/80 ,  H01L23/528 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L23/528 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53228 ,  H01L23/53257 ,  H01L23/535

Abstract: A semiconductor substrate includes a doped region. A premetallization dielectric layer extends over the semiconductor substrate. A first metallization layer is disposed on a top surface of the premetallization dielectric layer. A metal contact extends from the first metallization layer to the doped region. The premetallization dielectric layer includes sub-layers, and the first metal contact is formed by sub-contacts, each sub-contact formed in one of the sub-layers. Each first sub-contact has a width and a length, wherein the lengths of the sub-contacts forming the metal contact are all different from each other.

公开(公告)号：US20180246215A1

公开(公告)日：2018-08-30

申请号：US15444801

申请日：2017-02-28

Applicant: STMicroelectronics, Inc.

Inventor： Xiaoyong Yang ,  Cheng Peng ,  Jean-Marc Tessier

IPC: G01S17/93 ,  B64C39/02 ,  G05D1/00 ,  G05D1/10 ,  B64D31/06 ,  G01S17/87 ,  G01S17/10

CPC classification number: G01S17/933 ,  B64C39/024 ,  B64C2201/027 ,  B64C2201/123 ,  B64C2201/141 ,  B64D47/00 ,  G01S17/10 ,  G01S17/87 ,  G05D1/101

Abstract: The present disclosure is directed to an obstacle awareness device for vehicle systems. A threshold distance is set that identifies the range at which an obstruction interferes with fluid dynamics around and through at least one propulsion motor. One or more ranging sensors on the vehicle system detect relative position information of the obstruction when it is within the threshold distance. The relative position information is communicated to a controller, which adjusts a motor control signal to compensate for the obstruction interfering with the fluid dynamics around the at least one propulsion motor. The threshold distance may be defined by a three dimensional shape that encapsulated the vehicle system 100, and the three dimensional shape may change in shape or size with movement of the vehicle system.

公开(公告)号：US20180239163A1

公开(公告)日：2018-08-23

申请号：US15958808

申请日：2018-04-20

Applicant: STMicroelectronics, Inc.

Inventor： Mark A. Lysinger ,  Chih-Hung Tai ,  James L. Worley ,  Pavan Nallamothu

IPC: G02B27/64 ,  H04N5/225 ,  G03B5/00 ,  H02K41/035 ,  H02P7/025 ,  H04N5/232

Abstract: Various embodiments provide an optical image stabilization circuit including a drive circuit having a power waveform generator and a power waveform conversion circuit. The power waveform generator generates a power waveform. The power waveform conversion circuit converts the power waveform to a power drive signal. An actuator is then driven by the power drive signal to move a lens accordingly and compensate for any movements and vibrations of a housing of the lens.

公开(公告)号：US10038072B2

公开(公告)日：2018-07-31

申请号：US14982316

申请日：2015-12-29

Applicant: STMicroelectronics, Inc.

Inventor： John H. Zhang

IPC: H01L21/8238 ,  H01L29/66 ,  H01L29/775 ,  H01L21/66 ,  H01L29/45 ,  H01L29/778 ,  H01L29/41 ,  H01L21/265 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/10 ,  H01L29/165

CPC classification number: H01L29/66492 ,  H01L21/26513 ,  H01L21/823814 ,  H01L21/823842 ,  H01L22/12 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/413 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/456 ,  H01L29/4975 ,  H01L29/66431 ,  H01L29/66666 ,  H01L29/775 ,  H01L29/7781 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Incorporation of metallic quantum dots (e.g., silver bromide (AgBr) films) into the source and drain regions of a MOSFET can assist in controlling the transistor performance by tuning the threshold voltage. If the silver bromide film is rich in bromine atoms, anion quantum dots are deposited, and the AgBr energy gap is altered so as to increase Vt. If the silver bromide film is rich in silver atoms, cation quantum dots are deposited, and the AgBr energy gap is altered so as to decrease Vt. Atomic layer deposition (ALD) of neutral quantum dots of different sizes also varies Vt. Use of a mass spectrometer during film deposition can assist in varying the composition of the quantum dot film. The metallic quantum dots can be incorporated into ion-doped source and drain regions. Alternatively, the metallic quantum dots can be incorporated into epitaxially doped source and drain regions.

公开(公告)号：US10026849B2

公开(公告)日：2018-07-17

申请号：US15259516

申请日：2016-09-08

Applicant: International Business Machines Corporation ,  STMicroelectronics, Inc.

Inventor： Lawrence A. Clevenger ,  Carl J. Radens ,  Yiheng Xu ,  John H. Zhang

IPC: H01L21/8234 ,  H01L27/146 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L29/49

Abstract: Processes and overturned thin film device structures generally include a metal gate having a concave shape defined by three faces. The processes generally include forming the overturned thin film device structures such that the channel self-aligns to the metal gate and the contacts can be self-aligned to the sacrificial material.

公开(公告)号：US10026830B2

公开(公告)日：2018-07-17

申请号：US14698921

申请日：2015-04-29

Applicant: STMicroelectronics, Inc.

Inventor： Qing Liu ,  Salih Muhsin Celik

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/165 ,  H01L29/78 ,  H01L29/51 ,  H01L29/06 ,  H01L29/739

Abstract: A tunneling field effect transistor is formed from a fin of semiconductor material on a support substrate. The fin of semiconductor material includes a source region, a drain region and a channel region between the source region and drain region. A gate electrode straddles over the fin at the channel region. Sidewall spacers are provided on each side of the gate electrode. The source of the transistor is made from an epitaxial germanium content source region grown from the source region of the fin and doped with a first conductivity type. The drain of the transistor is made from an epitaxial silicon content drain region grown from the drain region of the fin and doped with a second conductivity type.

公开(公告)号：US10015449B2

公开(公告)日：2018-07-03

申请号：US14514132

申请日：2014-10-14

Applicant: STMicroelectronics, Inc.

Inventor： Oleg Logvinov ,  James D. Allen

IPC: H04N7/18 ,  H04N5/232

CPC classification number: H04N7/181 ,  H04N5/23203 ,  H04N5/23206

Abstract: Embodiments of the present disclosure include a system and a method of accessing a system. An embodiment is a system including an imaging system including a controller and a first camera, the controller having a communication connection configured to transmit or receive content or control signals, and a mobile device including a second camera, the mobile device having a communication interface configured to transmit or receive content or control signals with the controller, the controller being configured to compare images from the first and second cameras to allow access to the controller from the mobile device.

公开(公告)号：US20180167016A1

公开(公告)日：2018-06-14

申请号：US15428847

申请日：2017-02-09

Applicant: STMicroelectronics, Inc.

Inventor： Cheng Peng ,  Robert Krysiak

IPC: H02P29/60 ,  H02P27/08

CPC classification number: H02P29/60 ,  H02P27/08 ,  H02P29/024

Abstract: A system in package encloses a sensor and motor driver circuit. In an implementation, the sensor is an integrated circuit micro-electro-mechanical-systems (MEMS) sensor and the driver circuit is a motor driver circuit. Non-motor winding data information is sensed by the MEMS sensor and processed for the purpose of characterizing known fault patterns for motors; characterizing normal operation of the motor; and evaluating continued operation of the motor to detect abnormal motor behavior and instances of motor fault. The motor is driven using PWM control and the information output by the MEMS sensor is sampled at sampling times having a fixed timing relationship relative to the PWM control signals.

公开(公告)号：US20180166469A1

公开(公告)日：2018-06-14

申请号：US15890910

申请日：2018-02-07

Applicant: STMicroelectronics, Inc.

Inventor： John Hongguang Zhang

IPC: H01L27/12 ,  H01L21/285 ,  H01L21/768 ,  H01L29/66 ,  H01L21/84 ,  H01L29/417

CPC classification number: H01L27/1211 ,  H01L21/28518 ,  H01L21/76897 ,  H01L21/845 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66628

Abstract: A transistor includes an active region supported by a substrate and having a source region, a channel region and a drain region. A gate stack extends over the channel region and a first sidewall surrounds the gate stack. A raised source region and a raised drain region are provided over the source and drain regions, respectively, of the active region adjacent the first sidewall. A second sidewall peripherally surrounds each of the raised source region and raised drain region. The second sidewall extends above a top surface of the raised source region and raised drain region to define regions laterally delimited by the first and second sidewalls. A conductive material fills the regions to form a source contact and a drain contact to the raised source region and raised drain region, respectively.

公开(公告)号：US09997463B2

公开(公告)日：2018-06-12

申请号：US15191359

申请日：2016-06-23

Applicant: STMicroelectronics, Inc.

Inventor： John H. Zhang

IPC: H01L27/115 ,  H01L29/06 ,  H01L29/423 ,  H01L27/06 ,  H01L29/08 ,  H01L27/07 ,  H01L27/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/788 ,  H01L23/538 ,  H01L29/417 ,  H01L29/775 ,  H01L29/792 ,  H01L21/8238 ,  H01L27/092 ,  H01L27/11582 ,  H01L29/51

CPC classification number: H01L23/5386 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823871 ,  H01L21/823885 ,  H01L23/5384 ,  H01L27/0255 ,  H01L27/0688 ,  H01L27/0705 ,  H01L27/0727 ,  H01L27/092 ,  H01L27/11582 ,  H01L29/0676 ,  H01L29/1608 ,  H01L29/41741 ,  H01L29/42392 ,  H01L29/517 ,  H01L29/66439 ,  H01L29/66666 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/7827 ,  H01L29/78642 ,  H01L29/78696 ,  H01L29/7926

Abstract: A modular interconnect structure facilitates building complex, yet compact, integrated circuits from vertical GAA FETs. The modular interconnect structure includes annular metal contacts to the transistor terminals, sectors of stacked discs extending radially outward from the vertical nanowires, and vias in the form of rods. Extension tabs mounted onto the radial sector interconnects permit signals to fan out from each transistor terminal. Adjacent interconnects are linked by linear segments. Unlike conventional integrated circuits, the modular interconnects as described herein are formed at the same time as the transistors. Vertical GAA NAND and NOR gates provide building blocks for creating all types of logic gates to carry out any desired Boolean logic function. Stacked vertical GAA FETs are made possible by the modular interconnect structure. The modular interconnect structure permits a variety of specialized vertical GAA devices to be integrated on a silicon substrate using standard CMOS processes.