TIME-OF-FLIGHT HISTOGRAM SUPER-RESOLUTION SHAPE FITTING

    公开(公告)号:US20240353538A1

    公开(公告)日:2024-10-24

    申请号:US18304589

    申请日:2023-04-21

    Inventor: Andreas Assmann

    CPC classification number: G01S7/4865 G01S17/894

    Abstract: A method of ranging using a time-of-flight (ToF) ranging system includes: receiving, by a processor, a histogram generated by a ToF imager of the ToF ranging system, where the ToF imager is configured to transmit a light pulse for ranging purpose; finding a rising edge of a pulse region in the histogram, where the pulse region corresponds to a reflected light pulse from a target; fine-tuning a location of the rising edge by performing a fitting process between the rising edge and a pre-stored high-solution rising edge; and calculating an estimate of a distance of the target by adding a pre-determined offset to a distance of the rising edge after fine-tuning the location of the rising edge.

    OPTICAL PACKAGE WITH ELECTROMAGNETIC SHIELDING
    474.
    发明公开

    公开(公告)号:US20240332210A1

    公开(公告)日:2024-10-03

    申请号:US18618447

    申请日:2024-03-27

    CPC classification number: H01L23/552 H01L31/02016 H01L31/0203 H01L31/16

    Abstract: An integrated circuit optical package includes a support substrate having a mounting face and an electrical interconnection network between the mounting face and contact pads located on a lower face of the support substrate. A cap includes a lateral wall fastened on the mounting face and an upper wall including a first opening. A first optical element is fastened on the upper wall of the cap to seal the first opening. An electromagnetic shielding element is embedded in the cap and configured to be coupled to a reference supply point via the interconnection network and at least one contact pad. A first electronic chip is mounted on the mounting face and in optical cooperation with the first optical element.

    POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240332011A1

    公开(公告)日:2024-10-03

    申请号:US18614538

    申请日:2024-03-22

    Abstract: At least one embodiment of a method of manufacturing includes forming a first polycrystalline silicon carbide (SiC) substrate with a sintering process by sintering one or more powdered semiconductor materials. After the first polycrystalline SiC substrate is formed utilizing the sintering process, the first polycrystalline silicon carbide SiC substrate is utilized to form a second polycrystalline SiC substrate with a chemical vapor deposition (CVD) process. The second polycrystalline SiC substrate is formed on a surface of the first polycrystalline SiC substrate by depositing SiC on the surface of the first polycrystalline SiC substrate with the CVD process. As the first and second polycrystalline SiC substrates are made of the same or similar semiconductor material (e.g., SiC), a first coefficient of thermal expansion (CTE) for the first polycrystalline SiC substrate is the same or similar to the second CTE of the second polycrystalline SiC substrate.

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