公开(公告)号：US20050092244A1

公开(公告)日：2005-05-05

申请号：US10912059

申请日：2004-08-06

申请人： Jun-young Kim ,  Byoung-lyong Choi ,  Eun-kyung Lee

发明人： Jun-young Kim ,  Byoung-lyong Choi ,  Eun-kyung Lee

IPC分类号： H01L21/223 ,  C23C8/06 ,  C23C16/44 ,  C23C16/448 ,  C23C16/452 ,  C23C16/54 ,  C30B31/06 ,  C30B31/10 ,  C30B31/16 ,  C30B35/00 ,  H01L21/22 ,  C23C16/00

CPC分类号： C30B31/10 ,  C23C8/06 ,  C30B31/06 ,  C30B31/165 ,  C30B35/00

摘要： Provided is a diffusion system for forming a doping layer in a wafer. The diffusion system includes a bubbler for generating a doping gas; a premixer, which premixes the doping gas with reactive gases and preheats the gas mixture; a main chamber, in which the gas mixture reacts to the wafer; a buffer case, which externally isolates an exhaust port and a door for loading and unloading the wafer into and out or the main chamber; and a used gas exhaustion system, which exhausts a used gas after the reaction is finished in the main chamber.

摘要翻译： 提供了一种用于在晶片中形成掺杂层的扩散系统。 扩散系统包括用于产生掺杂气体的起泡器; 预混合器，其将掺杂气体与反应性气体预混合并预热气体混合物; 主室，其中气体混合物与晶片反应; 缓冲箱，其外部隔离排出口和用于将晶片装载和卸载的主体室; 以及在主室中反应完成后排出废气的废气排放系统。

公开(公告)号：US06697403B2

公开(公告)日：2004-02-24

申请号：US10122416

申请日：2002-04-16

申请人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Jae-ho You

发明人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Jae-ho You

IPC分类号： H01S500

CPC分类号： H01L33/24 ,  H01L33/105 ,  H01L33/34 ,  H01L33/42 ,  H01L33/465

摘要： A light-emitting device and a light-emitting apparatus using the same. The light-emitting device includes an n-type or p-type substrate, a doped region formed on a first surface of the substrate with a predetermined dopant to be an opposite type from that of the substrate, to an ultra-shallow depth such that light is emitted from a p-n junction between the doped region and the substrate by a quantum confinement effect, a resonator which improves the selectivity of wavelength of the light emitted from the p-n junction, and first and second electrodes formed on the first surface and a second surface of the substrate, respectively, for injection of holes and electrons. The light-emitting device includes the ultra-shallow doped region so that it can emit light with a quantum confinement effect in the p-n junction. A resonator structure to resonate only a particular wavelength range of light is added to the light-emitting device so that the selectivity of light wavelength is markedly improved with excellent efficiency. The intensity of light emission is amplified by the resonator structure, and the directional property of the emitted light can be improved further than that of conventional light-emitting devices.

摘要翻译： 发光装置和使用其的发光装置。 发光器件包括n型或p型衬底，在衬底的第一表面上形成具有与衬底相反的预定掺杂剂的掺杂区域到超浅深度，使得 光通过量子限制效应从掺杂区域和衬底之间的pn结发射，改善从pn结发射的光的波长的选择性的谐振器，以及形成在第一表面上的第一和第二电极 分别用于注入空穴和电子的衬底的表面。 发光器件包括超浅掺杂区域，使得其可以在p-n结中发射具有量子限制效应的光。 仅在特定的光波长范围内谐振的谐振器结构被添加到发光器件中，从而以优异的效率显着地提高了光波长的选择性。 通过谐振器结构放大发光强度，与现有的发光元件相比，能够进一步提高发光的取向性。

公开(公告)号：US09385194B2

公开(公告)日：2016-07-05

申请号：US13478961

申请日：2012-05-23

申请人： Kyung-sang Cho ,  Byoung-lyong Choi ,  Tae-ho Kim

发明人： Kyung-sang Cho ,  Byoung-lyong Choi ,  Tae-ho Kim

IPC分类号： B82Y10/00 ,  H01L29/06 ,  H01L29/12 ,  H01L29/20 ,  H01L29/22 ,  B82Y30/00 ,  B82Y40/00 ,  C01B19/00 ,  H01B1/00 ,  H01L29/76

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B19/002 ,  C01B19/007 ,  C01P2002/82 ,  C01P2006/40 ,  H01L29/127 ,  H01L29/20 ,  H01L29/22 ,  H01L29/7613

摘要： A method of manufacturing nanoparticles including: providing a metal chalcogenide complexes (MCC) hydrazine hydrate solution; providing a first organic solution of nanoparticles with first organic ligands; forming a mixed solution by mixing the MCC hydrazine hydrate solution and the first organic solution of nanoparticles capped with the first organic ligands; and replacing the first organic ligands of the nanoparticles with ligands of the MCC hydrazine hydrate.

摘要翻译： 一种制造纳米颗粒的方法，包括：提供金属硫族化合物（MCC）水合肼溶液; 提供具有第一有机配体的纳米颗粒的第一有机溶液; 通过混合MCC水合肼溶液和用第一有机配体封端的纳米颗粒的第一有机溶液形成混合溶液; 并用MCC水合肼的配体代替纳米颗粒的第一有机配体。

公开(公告)号：US08846418B2

公开(公告)日：2014-09-30

申请号：US13482274

申请日：2012-05-29

申请人： Tae-ho Kim ,  Kyung-sang Cho ,  Dae-young Chung ,  Byoung-lyong Choi

发明人： Tae-ho Kim ,  Kyung-sang Cho ,  Dae-young Chung ,  Byoung-lyong Choi

IPC分类号： H01L47/02 ,  G03F7/00 ,  B82Y20/00 ,  B82Y30/00

CPC分类号： B82Y20/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/00 ,  G03F7/0002 ,  Y02E10/549 ,  Y02P70/521

摘要： A method of manufacturing a quantum dot layer, and a quantum dot optoelectronic device including the quantum dot layer. The method includes sequentially stacking a self-assembled monolayer, a sacrificial layer, and a quantum dot layer on a source substrate; disposing a stamp on the quantum dot layer; picking up the sacrificial layer, the quantum dot layer and the stamp; and removing the sacrificial layer from the quantum dot layer using a solution that dissolves the sacrificial layer.

摘要翻译： 量子点层的制造方法以及包含量子点层的量子点光电子器件。 该方法包括在源极衬底上依次堆叠自组装单层，牺牲层和量子点层; 在量子点层上设置印模; 拾取牺牲层，量子点层和印章; 以及使用溶解牺牲层的溶液从量子点层去除牺牲层。

公开(公告)号：US08513641B2

公开(公告)日：2013-08-20

申请号：US12350709

申请日：2009-01-08

申请人： Eun Kyung Lee ,  Byoung Lyong Choi ,  Gyeong Su Park ,  Jai Yong Han

发明人： Eun Kyung Lee ,  Byoung Lyong Choi ,  Gyeong Su Park ,  Jai Yong Han

IPC分类号： H01L29/06

CPC分类号： B82Y20/00 ,  B82Y40/00 ,  C01B33/113 ,  H01L29/0669 ,  H01L29/068 ,  H01L29/66 ,  H01L33/18

摘要： Disclosed herein is a nanowire including silicon rich oxide and a method for producing the same. The nanowire exhibits excellent electrically conducting properties and optical characteristics, and therefore is effectively used in a variety of applications including, for example, solar cells, sensors, photodetectors, light emitting diodes, laser diodes, EL devices, PL devices, CL devices, FETs, CTFs, surface plasmon waveguides, MOS capacitors and the like.

摘要翻译： 本文公开了包含富硅氧化物的纳米线及其制造方法。 纳米线表现出优异的导电性能和光学特性，因此有效地用于各种应用中，包括例如太阳能电池，传感器，光电探测器，发光二极管，激光二极管，EL器件，PL器件，CL器件，FET ，CTF，表面等离子体波导，MOS电容器等。

公开(公告)号：US20130146838A1

公开(公告)日：2013-06-13

申请号：US13613203

申请日：2012-09-13

申请人： Ji-yeon KU ,  Tae-ho KIM ,  Dae-young CHUNG ,  Kyung-sang CHO ,  Byoung-lyong CHOI

发明人： Ji-yeon KU ,  Tae-ho KIM ,  Dae-young CHUNG ,  Kyung-sang CHO ,  Byoung-lyong CHOI

IPC分类号： H01L33/04

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/08 ,  H01L29/127 ,  H01L31/035218 ,  H01L31/06 ,  H01L33/06 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0042 ,  H01L51/426 ,  Y02E10/549

摘要： A quantum dot device includes: a cathode layer; an anode layer; an active layer that is disposed between the cathode layer and the anode layer and includes a quantum layer; and an electron movement control layer that is disposed between the cathode layer and the anode layer and includes a different kind of quantum layer having an energy level different from that of the quantum layer comprised in the active layer.

摘要翻译： 量子点器件包括：阴极层; 阳极层; 设置在所述阴极层和所述阳极层之间并且包括量子层的有源层; 以及电子移动控制层，其设置在所述阴极层和所述阳极层之间，并且包括具有与所述有源层中包含的所述量子层的能级不同的能级的不同种类的量子层。

公开(公告)号：US20130015424A1

公开(公告)日：2013-01-17

申请号：US13408279

申请日：2012-02-29

申请人： Dae-young CHUNG ,  Kyung-sang CHO ,  Tae-ho KIM ,  Byoung-lyong CHOI

发明人： Dae-young CHUNG ,  Kyung-sang CHO ,  Tae-ho KIM ,  Byoung-lyong CHOI

IPC分类号： H01L33/02 ,  H01L33/04 ,  H01L31/02

CPC分类号： H01L51/52 ,  H01L51/0094

摘要： An optoelectronic device is provided including an element that forms a dipole moment between an active layer and a charge transport layer. The optoelectronic device may include an active layer between a first electrode and a second electrode, a first charge transport layer between the first electrode and the active layer, and a dipole layer between the active layer and the first charge transport layer. A second charge transport layer may be further provided between the second electrode and the active layer. The second dipole layer may be further provided between the second charge transport layer and the active layer.

摘要翻译： 提供了一种光电子器件，其包括在有源层和电荷传输层之间形成偶极矩的元件。 光电子器件可以包括在第一电极和第二电极之间的有源层，第一电极和有源层之间的第一电荷传输层，以及有源层和第一电荷传输层之间的偶极子层。 第二电荷输送层可以进一步设置在第二电极和有源层之间。 第二偶极子层可以进一步设置在第二电荷传输层和有源层之间。

公开(公告)号：US20120326115A1

公开(公告)日：2012-12-27

申请号：US13470487

申请日：2012-05-14

申请人： Byoung-lyong CHOI ,  Eun-kyung LEE ,  Dong-mok WHANG

发明人： Byoung-lyong CHOI ,  Eun-kyung LEE ,  Dong-mok WHANG

IPC分类号： H01L29/12 ,  H01L21/20 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L29/1606 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02164 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L29/0673 ,  H01L29/66045 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/785 ,  H01L29/78684 ,  H01L29/78696

摘要： A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces of the growth layer.

摘要翻译： 石墨烯结构和石墨烯结构的制造方法以及石墨烯装置和石墨烯装置的制造方法。 石墨烯结构包括基材; 生长层，其设置在所述基板上并且具有暴露的侧表面; 以及设置在生长层的侧表面上的石墨烯层。

公开(公告)号：US08120010B2

公开(公告)日：2012-02-21

申请号：US12534226

申请日：2009-08-03

申请人： Kyung Sang Cho ,  Byoung Lyong Choi ,  Eun Kyung Lee

发明人： Kyung Sang Cho ,  Byoung Lyong Choi ,  Eun Kyung Lee

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H05B33/14 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/502 ,  H01L51/5048

摘要： A quantum dot electroluminescent device that includes a substrate, a quantum dot light-emitting layer disposed on the substrate, a first electrode which injects charge carriers into the quantum dot light-emitting layer, a second electrode which injects charge carriers, which have an opposite charge than the charge carriers injected by the first electrode, into the quantum dot light-emitting layer, a hole transport layer disposed between the first electrode and the quantum dot light-emitting layer, and an electron transport layer disposed between the second electrode and the quantum dot light-emitting layer, wherein the quantum dot light-emitting layer has a first surface in contact with the hole transport layer and a second surface in contact with an electron transport layer, and wherein the first surface has an organic ligand distribution that is different from an organic ligand distribution of the second surface.

摘要翻译： 一种量子点电致发光器件，包括衬底，设置在衬底上的量子点发光层，将电荷载流子注入量子点发光层的第一电极，注入电荷载流子的第二电极，其具有相反的 电荷比由第一电极注入的电荷载流子进入量子点发光层，设置在第一电极和量子点发光层之间的空穴传输层和设置在第二电极和量子点发光层之间的电子传输层 量子点发光层，其中量子点发光层具有与空穴传输层接触的第一表面和与电子传输层接触的第二表面，并且其中第一表面具有有机配体分布 不同于第二表面的有机配体分布。

公开(公告)号：US20110121264A1

公开(公告)日：2011-05-26

申请号：US12765930

申请日：2010-04-23

申请人： Byoung-lyong CHOI ,  Eun-kyung LEE ,  Dong-mok WHANG ,  Byung-sung KIM

发明人： Byoung-lyong CHOI ,  Eun-kyung LEE ,  Dong-mok WHANG ,  Byung-sung KIM

IPC分类号： H01L29/15 ,  H01B1/04 ,  H01L21/20

CPC分类号： H01L21/02639 ,  B82Y10/00 ,  H01B1/04 ,  H01L21/02376 ,  H01L21/02444 ,  H01L21/02521 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/1606

摘要： A composite structure includes; graphene and at least one substantially one-dimensional nanostructure disposed on the graphene.

摘要翻译： 复合结构包括： 石墨烯和设置在石墨烯上的至少一个基本上一维的纳米结构。