公开(公告)号：US20150318453A1

公开(公告)日：2015-11-05

申请号：US14690480

申请日：2015-04-20

Applicant: Genesis Photonics Inc.

Inventor： Chin-Hua Hung ,  Hao-Chung Lee ,  Yu-Feng Lin

IPC: H01L33/50 ,  H01L33/52

CPC classification number: H01L33/508 ,  H01L33/504 ,  H01L33/52 ,  H01L2933/0041 ,  H01L2933/005

Abstract: A package method includes steps of providing a light emitting module, a mold and a molding compound, wherein the light emitting module includes a substrate and at least one light emitting unit disposed on the substrate, the mold has at least one recess, and a side wall of the recess is parallel to a side surface of the light emitting unit; filling the recess with the molding compound; placing the substrate on the mold reversely, so that the light emitting unit is immersed into the recess and the molding compound directly encapsulates the light emitting unit; and heating and pressing the substrate and the mold, so as to solidify the molding compound.

Abstract translation: 封装方法包括提供发光模块，模具和模制化合物的步骤，其中发光模块包括基板和设置在基板上的至少一个发光单元，模具具有至少一个凹部和侧面 所述凹部的壁平行于所述发光单元的侧面; 用模塑料填充凹槽; 将基板反向放置在模具上，使得发光单元浸入凹部中，并且模塑料直接封装发光单元; 并加热和压制基材和模具，以使模塑料固化。

公开(公告)号：US09175819B2

公开(公告)日：2015-11-03

申请号：US14282264

申请日：2014-05-20

Applicant: Genesis Photonics Inc.

Inventor： Kuan-Chieh Huang

IPC: H01L33/50 ,  H01L33/64 ,  F21V29/87 ,  F21K99/00 ,  F21V29/90

CPC classification number: F21K9/56 ,  F21K9/64 ,  F21V29/506 ,  F21V29/87 ,  F21V29/90 ,  H01L33/644

Abstract: A light-emitting device includes a light-emitting component. The light-emitting component includes a circuit board, a light-emitting diode which is mounted on and electrically connected to the circuit board, a wavelength-converting shell which covers the light-emitting diode, and a heat conductive layer which is formed on the wavelength-converting shell and which includes graphene.

Abstract translation: 发光装置包括发光部件。 发光元件包括电路板，安装在电路板上并与之电连接的发光二极管，覆盖发光二极管的波长转换外壳和形成在发光二极管上的导热层 波长转换壳，其中包括石墨烯。

公开(公告)号：US09153743B2

公开(公告)日：2015-10-06

申请号：US13835367

申请日：2013-03-15

Applicant: Genesis Photonics Inc.

Inventor： Cheng-Hung Lin ,  Yu-Yun Lo ,  Cheng-Yen Chen ,  Yu-Hung Lai

IPC: H01L33/36 ,  H01L33/00 ,  H01L27/15

CPC classification number: H01L33/36 ,  H01L27/15 ,  H01L33/005 ,  H01L33/0095 ,  H01L2933/0025

Abstract: A method of forming light emitting diode dies includes: forming an epitaxial layered structure that defines light emitting units on a front surface of a substrate wafer; forming a photoresist layer over a back surface of the substrate wafer; aligning the substrate wafer and patterning the photoresist layer so as to form openings in the photoresist layer, each of the openings having an area less than a projected area of the respective light emitting unit; forming a solder layer on the photoresist layer such that the solder layer fills the openings in the photoresist layer; removing the photoresist layer and a portion of the solder layer that covers the photoresist layer from the substrate wafer; and dicing the substrate wafer.

Abstract translation: 一种形成发光二极管管芯的方法包括：形成在衬底晶片的前表面上限定发光单元的外延层状结构; 在所述衬底晶片的背面上形成光致抗蚀剂层; 对准衬底晶片并图案化光致抗蚀剂层以在光致抗蚀剂层中形成开口，每个开口具有小于相应发光单元的投影面积的面积; 在光致抗蚀剂层上形成焊料层，使得焊料层填充光致抗蚀剂层中的开口; 从衬底晶片去除光致抗蚀剂层和覆盖光致抗蚀剂层的焊料层的一部分; 并切割衬底晶片。

公开(公告)号：US09147800B2

公开(公告)日：2015-09-29

申请号：US13963127

申请日：2013-08-09

Applicant: GENESIS PHOTONICS INC.

Inventor： Yen-Lin Lai ,  Jyun-De Wu ,  Yu-Chu Li

IPC: H01L29/06 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/14 ,  H01L33/32 ,  H01L33/325

Abstract: A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm−3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.

Abstract translation: 揭示了氮化物半导体结构和半导体发光器件。 半导体发光器件包括设置有第一类型掺杂半导体层和第二类型掺杂半导体层的衬底。 发光层设置在第一掺杂半导体层和第二掺杂半导体层之间。 第二种掺杂半导体层掺杂有浓度大于5×1019cm-3的第二种掺杂剂，而第二类掺杂半导体层的厚度小于30nm。 由此，半导体发光器件提供更好的发光效率。

公开(公告)号：US20150188014A1

公开(公告)日：2015-07-02

申请号：US14535333

申请日：2014-11-07

Applicant: Genesis Photonics Inc.

Inventor： Yu-Yun Lo ,  Yi-Fan Li ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L33/62 ,  H01L33/48 ,  H01L33/42 ,  H01L33/44

CPC classification number: H01L33/40 ,  H01L33/42 ,  H01L33/44

Abstract: A light emitting chip includes a light emitting unit, a eutectic layer and a surface passivation layer. The eutectic layer has a first surface and a second surface opposite to each other. The light emitting chip connects to the first surface of the eutectic layer. The surface passivation layer covers the second surface of the eutectic layer. A material of the surface passivation layer includes at least a metal of an oxidation potential from −0.2 volts to −1.8 volts.

Abstract translation: 发光芯片包括发光单元，共晶层和表面钝化层。 共晶层具有彼此相对的第一表面和第二表面。 发光芯片连接到共晶层的第一表面。 表面钝化层覆盖共晶层的第二表面。 表面钝化层的材料至少包括-0.2伏至-1.8伏的氧化电位的金属。

公开(公告)号：US20150102378A1

公开(公告)日：2015-04-16

申请号：US14513218

申请日：2014-10-14

Applicant: Genesis Photonics Inc.

Inventor： Jing-En Huang ,  Shao-Ying Ting ,  Kuan-Yung Liao ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Yu-Yun Lo

IPC: H01L33/58 ,  H01L33/52 ,  H01L33/60 ,  H01L33/50

CPC classification number: H01L33/58 ,  H01L33/50 ,  H01L33/52 ,  H01L33/60

Abstract: A light-emitting diode package structure includes a package carrier, a light guiding component and a light emitting unit. The light guiding component is disposed on the package carrier. The light emitting unit is disposed on an upper surface of light guiding component relatively distant from the package carrier. A horizontal projection area of the light guiding component is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding component and emits from the upper surface of the light guiding component. An included angle existing between the light beam and a normal direction of the upper surface ranges from 0 degree to 75 degrees.

Abstract translation: 发光二极管封装结构包括封装载体，导光部件和发光单元。 导光部件设置在封装载体上。 发光单元设置在相对远离封装载体的导光部件的上表面上。 导光部件的水平投影面积大于发光部件的水平投影面积。 发光单元适于发射光束，并且光束的一部分进入导光部件并从导光部件的上表面发射。 存在于光束与上表面的法线方向之间的夹角为0度〜75度。

公开(公告)号：US08963184B2

公开(公告)日：2015-02-24

申请号：US13844850

申请日：2013-03-16

Applicant: Genesis Photonics Inc.

Inventor： Kuan-Yung Liao ,  Yu-Lien Yang ,  Yen-Lin Lai

IPC: H01L33/00 ,  F21K99/00 ,  H01L33/58 ,  H01L33/02 ,  H01L33/10 ,  H01L33/32

CPC classification number: F21K9/50 ,  H01L33/02 ,  H01L33/10 ,  H01L33/105 ,  H01L33/32 ,  H01L33/58 ,  H01L2933/0091

Abstract: The present invention provides a pattern substrate structure for light emitting angle convergence and a light emitting diode device using the same. The pattern substrate structure has a plurality of enclosed geometric regions defined by at least three stripe-shaped parts on a substrate to provide the light reflection effect through the uneven surface of the substrate and thereby converge the light emitting angle of the light emitting diode element into 100˜110 degrees. Therefore, the illuminant efficiency of the light emitting diode device using the pattern substrate structure is substantially raised because of the improved directivity.

Abstract translation: 本发明提供了一种用于发光角度会聚的图案衬底结构和使用其的发光二极管器件。 图案衬底结构具有由衬底上的至少三个条形部分限定的多个封闭几何区域，以通过衬底的不平坦表面提供光反射效应，从而将发光二极管元件的发光角度会聚到 100〜110度。 因此，由于提高的方向性，使用图形衬底结构的发光二极管器件的发光体效率大大提高。

公开(公告)号：US20150048396A1

公开(公告)日：2015-02-19

申请号：US14459335

申请日：2014-08-14

Applicant: Genesis Photonics Inc.

Inventor： Jyun-De Wu ,  Shen-Jie Wang

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/32 ,  H01L33/04 ,  H01L33/06

Abstract: A light emitting structure includes an N-type semiconductor layer, a P-type semiconductor layer, a light emitting layer, and a stress regulation layer. The light emitting layer is formed between the N-type semiconductor layer and the P-type semiconductor layer. The stress regulation layer is formed between the N-type semiconductor layer and the light emitting layer. The stress regulation layer comprises a plurality of pairs of AlxIn(1-x)GaN and AlyIn(1-y)GaN layers stacked with each other, wherein 0

Abstract translation: 发光结构包括N型半导体层，P型半导体层，发光层和应力调节层。 发光层形成在N型半导体层和P型半导体层之间。 应力调整层形成在N型半导体层和发光层之间。 应力调节层包括彼此堆叠的多对Al x In（1-x）GaN和AllyIn（1-y）GaN层，其中0

公开(公告)号：US20140355238A1

公开(公告)日：2014-12-04

申请号：US14282264

申请日：2014-05-20

Applicant: Genesis Photonics Inc.

Inventor： Kuan-Chieh HUANG

IPC: F21K99/00 ,  F21V29/00

CPC classification number: F21K9/56 ,  F21K9/64 ,  F21V29/506 ,  F21V29/87 ,  F21V29/90 ,  H01L33/644

Abstract: A light-emitting device includes a light-emitting component. The light-emitting component includes a circuit board, a light-emitting diode which is mounted on and electrically connected to the circuit board, a wavelength-converting shell which covers the light-emitting diode, and a heat conductive layer which is formed on the wavelength-converting shell and which includes graphene.

Abstract translation: 发光装置包括发光部件。 发光元件包括电路板，安装在电路板上并与之电连接的发光二极管，覆盖发光二极管的波长转换外壳和形成在发光二极管上的导热层 波长转换壳，其中包括石墨烯。

公开(公告)号：US20140138618A1

公开(公告)日：2014-05-22

申请号：US13963118

申请日：2013-08-09

Applicant: Genesis Photonics Inc.

Inventor： JYUN-DE WU ,  YU-CHU LI

IPC: H01L33/06

CPC classification number: H01L33/06 ,  H01L33/14 ,  H01L33/32

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a light emitting layer disposed between a n-type semiconductor layer and a p-type semiconductor layer, and a hole supply layer disposed between the light emitting layer and the p-type semiconductor layer. The hole supply layer is made from material InxGa1-xN (0

Abstract translation: 揭示了包括其的氮化物半导体结构和半导体发光器件。 氮化物半导体结构包括设置在n型半导体层和p型半导体层之间的发光层和设置在发光层和p型半导体层之间的空穴供给层。 孔供给层由材料In x Ga 1-x N（0