公开(公告)号：US3947760A

公开(公告)日：1976-03-30

申请号：US538496

申请日：1975-01-03

Applicant: Hitoshi Noguchi ,  Kohichi Maeda ,  Takeshi Kyo

Inventor： Hitoshi Noguchi ,  Kohichi Maeda ,  Takeshi Kyo

IPC: G01R27/02 ,  H03M1/00 ,  G01R27/00

CPC classification number: G01R27/02 ,  H03M1/52

Abstract: A method and means for measuring the electric properties of capacitor, inductor and resistor elements is described. The element to be measured and a reference element are connected in series, and standard A.C. voltage is applied to one end of the series circuit whereas a variable voltage is applied to the other end of said circuit. The variable voltage is controlled in order to zero the voltage or the current at the common junction of both the element to be measured and the reference element. Said standard voltage and said variable voltage are rectified, and the generated D.C. signals are used for charging integrator capacitors. These capacitors are then discharged and the ratio of charging and discharging time is a measure of the resistance, capacitance and inductance, respectively, of the unknown element. Dielectric and magnetic dissipation factors may be measured in a similar manner.

Abstract translation: 描述了用于测量电容器，电感器和电阻器元件的电特性的方法和装置。 要测量的元件和参考元件串联连接，并且将标准交流电压施加到串联电路的一端，而可变电压被施加到所述电路的另一端。 控制可变电压以便将要测量的元件和参考元件的公共接点处的电压或电流归零。 所述标准电压和所述可变电压被整流，所产生的直流信号用于对积分电容器进行充电。 然后，这些电容器被放电，并且充电和放电时间的比率分别是未知元件的电阻，电容和电感的量度。 可以以类似的方式测量电介质和磁损耗因子。

公开(公告)号：US08826854B2

公开(公告)日：2014-09-09

申请号：US12654796

申请日：2010-01-04

Applicant: Hitoshi Noguchi

Inventor： Hitoshi Noguchi

IPC: C23C16/00 ,  C23C16/44 ,  C23C16/503 ,  C23C16/27 ,  C23C16/458

CPC classification number: C23C16/4582 ,  C23C16/272 ,  C23C16/4401 ,  C23C16/503

Abstract: The present invention is a direct-current plasma CVD apparatus comprising at least a fixed electrode and a substrate stage having a top flat face and combined with an electrode for placing a substrate, in which the substrate stage top face is not located on a line extended from a center of the fixed electrode in vertical direction, and an angle formed between a line of a length R connecting a center of the substrate stage top face with the center of the fixed electrode and the line extended in vertical direction from the center of the fixed electrode is 90° or less. As a result, there is provided a direct-current plasma CVD apparatus in which a high quality vapor phase growth film, such as diamond of a large area having few defects caused by the fall of the substances produced at the fixed electrode, can be obtained.

Abstract translation: 本发明是直流等离子体CVD装置，其至少包括固定电极和具有顶部平坦面的基板台，并与用于放置基板的电极组合，其中基板台顶面不位于延伸的线上 从垂直方向的固定电极的中心和从基板台顶面的中心与固定电极的中心连接的长度R的线与从垂直方向的中心延伸的线形成的角度 固定电极为90°以下。 结果，提供了一种直流等离子体CVD装置，其中可以获得高品质的气相生长膜，例如由在固定电极产生的物质的下落引起的缺陷引起的缺陷的大面积的金刚石 。

公开(公告)号：US08279554B2

公开(公告)日：2012-10-02

申请号：US13364610

申请日：2012-02-02

Applicant: Hitoshi Noguchi ,  Osamu Shimizu ,  Yasushi Endo

Inventor： Hitoshi Noguchi ,  Osamu Shimizu ,  Yasushi Endo

IPC: G11B5/78

CPC classification number: G11B5/70 ,  G11B5/00821 ,  G11B5/70678 ,  G11B5/71 ,  G11B5/714

Abstract: The magnetic signal reproduction system comprises a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nonmagnetic support; and a reproduction head, wherein a number of protrusions equal to or greater than 10 nm in height on the magnetic layer surface, as measured by an atomic force microscope, ranges from 50 to 2500/10,000 μm2, a quantity of lubricant on the magnetic layer surface, denoted as a surface lubricant index, ranges from 0.5 to 5.0, a surface abrasive occupancy of the magnetic layer ranges from 2 to 20 percent, and the reproduction head is a magnetoresistive magnetic head comprising a spin-valve layer.

Abstract translation: 磁信号再现系统包括磁记录介质，其包括在非磁性载体上包含铁磁粉末和粘合剂的磁性层; 以及再现头，其中通过原子力显微镜测量的磁性层表面上的高度等于或大于10nm的突起的数量范围为50至2500 /10,000μm2，磁性层上的润滑剂量 以表面润滑剂指数表示的表面的范围为0.5至5.0，磁性层的表面磨料占有率为2至20％，再现头为包括自旋阀层的磁阻磁头。

公开(公告)号：US20120225308A1

公开(公告)日：2012-09-06

申请号：US13471396

申请日：2012-05-14

Applicant: Hitoshi NOGUCHI

Inventor： Hitoshi NOGUCHI

IPC: C01B31/00 ,  B32B15/04

CPC classification number: C30B29/04 ,  C30B25/105 ,  C30B25/18 ,  Y10T428/31678

Abstract: The present invention is a multilayer substrate comprising, at least, a single crystal substrate, a diamond film vapor-deposited on the single crystal substrate, wherein the single crystal substrate is a single crystal Ir or a single crystal Rh and a method for producing a multilayer substrate comprising, at least, a step of vapor-depositing a diamond film on a single crystal substrate, wherein a single crystal Ir or a single crystal Rh is used as the single crystal substrate. As a result, there is provided a multilayer substrate having a high quality single crystal diamond film with a large area and with a high crystallinity as a continuous film in which the diamond and the single crystal substrate are not broken and a method for producing the multilayer substrate at low cost.

Abstract translation: 本发明是至少包括单晶衬底，气相沉积在单晶衬底上的金刚石膜的多层衬底，其中单晶衬底是单晶Ir或单晶Rh，以及制造方法 至少包括在单晶衬底上气相沉积金刚石膜的步骤，其中使用单晶Ir或单晶Rh作为单晶衬底。 结果，提供了具有大面积且具有高结晶度的高质量单晶金刚石膜的多层基板作为不破坏金刚石和单晶基板的连续膜，以及制造多层膜的方法 底物低成本。

公开(公告)号：US20120225307A1

公开(公告)日：2012-09-06

申请号：US13471375

申请日：2012-05-14

Applicant: Hitoshi Noguchi

Inventor： Hitoshi Noguchi

IPC: B32B15/04 ,  C01B31/00

CPC classification number: C30B29/04 ,  C30B25/105 ,  C30B25/18 ,  Y10T428/31678

Abstract: The present invention is a multilayer substrate comprising, at least, a single crystal substrate, a diamond film vapor-deposited on the single crystal substrate, wherein the single crystal substrate is a single crystal Ir or a single crystal Rh and a method for producing a multilayer substrate comprising, at least, a step of vapor-depositing a diamond film on a single crystal substrate, wherein a single crystal Ir or a single crystal Rh is used as the single crystal substrate. As a result, there is provided a multilayer substrate having a high quality single crystal diamond film with a large area and with a high crystallinity as a continuous film in which the diamond and the single crystal substrate are not broken and a method for producing the multilayer substrate at low cost.

公开(公告)号：US20120069487A1

公开(公告)日：2012-03-22

申请号：US13375159

申请日：2010-05-07

Applicant: Hitoshi Noguchi ,  Naoki Tanaka ,  Tatsuya Nakamura

Inventor： Hitoshi Noguchi ,  Naoki Tanaka ,  Tatsuya Nakamura

IPC: H01G4/08 ,  C23C14/34 ,  C23C16/44 ,  B05D5/12 ,  B05D1/12

CPC classification number: H01G4/33 ,  H01G4/002 ,  H01G4/1209 ,  H05K1/162

Abstract: [Problem to be Solved]A problem to be solved is to provide a stacked structure and a method of manufacturing the same that make generation of insulation breakdown unlikely, while providing a high dielectric constant and a high quality.[Means for Solving Problem]A stacked structure according to the present invention is a stacked structure in which a dielectric layer 3 is provided between a first conductive layer 1 and a second conductive layer 2. The dielectric layer 3 includes a dielectric film 31 formed on the first conductive layer 1, and a dielectric particle film 32 formed by applying a dispersion solution containing dielectric particles onto the dielectric film 31. A method of manufacturing the stacked structure according to the present invention includes a dielectric layer forming step of forming the dielectric layer 3 on the first conductive layer 1, and a conductive layer forming step of forming the second conductive layer 2 on the dielectric layer 3. The dielectric layer forming step includes a dielectric film forming step of forming the dielectric film 31 on the first conductive layer 1, and a particle film forming step of forming the dielectric particle film 32 by applying a dispersion solution containing dielectric particles onto the dielectric film 31.

Abstract translation: [待解决的问题]要解决的问题在于提供高介电常数和高质量的同时，提供不会发生绝缘破坏的堆叠结构及其制造方法。 解决问题的手段根据本发明的堆叠结构是在第一导电层1和第二导电层2之间设置电介质层3的叠层结构。电介质层3包括形成在 第一导电层1和通过将包含电介质颗粒的分散溶液施加到电介质膜31上形成的电介质颗粒膜32.根据本发明的层压结构的制造方法包括形成电介质层的电介质层形成步骤 并且在介电层3上形成第二导电层2的导电层形成步骤。电介质层形成步骤包括在第一导电层1上形成电介质膜31的电介质膜形成步骤 以及通过涂布分散液而形成电介质粒子膜32的粒子膜形成工序 g电介质颗粒到介电膜31上。

公开(公告)号：US20110084285A1

公开(公告)日：2011-04-14

申请号：US12884926

申请日：2010-09-17

Applicant: Hitoshi NOGUCHI

Inventor： Hitoshi NOGUCHI

IPC: H01L29/16 ,  H01L21/04

CPC classification number: C30B25/183 ,  C30B25/06 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  C30B29/16 ,  C30B29/36 ,  C30B33/08

Abstract: The present invention is a base material for growing a single crystal diamond comprising: at least a single crystal SiC substrate; and an iridium film or a rhodium film heteroepitaxially grown on a side of the single crystal SiC substrate where the single crystal diamond is to be grown. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost.

Abstract translation: 本发明是用于生长单晶金刚石的基材，包括：至少单晶SiC衬底; 以及在要生长单晶金刚石的单晶SiC衬底的一侧异质外延生长的铱膜或铑膜。 结果，提供了用于生长单晶金刚石的基材和用于制造单晶金刚石基底的方法，该单晶金刚石基底可以生长具有大面积和良好结晶度的单晶金刚石，并且生产高质量的单晶金刚石基底 低成本。

公开(公告)号：US20100178730A1

公开(公告)日：2010-07-15

申请号：US12654796

申请日：2010-01-04

Applicant: Hitoshi Noguchi

Inventor： Hitoshi Noguchi

IPC: H01L21/04 ,  C23C16/513

CPC classification number: C23C16/4582 ,  C23C16/272 ,  C23C16/4401 ,  C23C16/503

Abstract: The present invention is a direct-current plasma CVD apparatus comprising at least a fixed electrode and a substrate stage having a top flat face and combined with an electrode for placing a substrate, in which the substrate stage top face is not located on a line extended from a center of the fixed electrode in vertical direction, and an angle formed between a line of a length R connecting a center of the substrate stage top face with the center of the fixed electrode and the line extended in vertical direction from the center of the fixed electrode is 90° or less. As a result, there is provided a direct-current plasma CVD apparatus in which a high quality vapor phase growth film, such as diamond of a large area having few defects caused by the fall of the substances produced at the fixed electrode, can be obtained.

Abstract translation: 本发明是直流等离子体CVD装置，其至少包括固定电极和具有顶部平坦面的基板台，并与用于放置基板的电极组合，其中基板台顶面不位于延伸的线上 从垂直方向的固定电极的中心和从基板台顶面的中心与固定电极的中心连接的长度R的线与从垂直方向的中心延伸的线形成的角度 固定电极为90°以下。 结果，提供了一种直流等离子体CVD装置，其中可以获得高品质的气相生长膜，例如由在固定电极产生的物质的下落引起的缺陷引起的缺陷的大面积的金刚石 。

公开(公告)号：US07628856B2

公开(公告)日：2009-12-08

申请号：US11713036

申请日：2007-03-02

Applicant: Atsuhito Sawabe ,  Hitoshi Noguchi ,  Shintaro Maeda

Inventor： Atsuhito Sawabe ,  Hitoshi Noguchi ,  Shintaro Maeda

IPC: C30B29/02

CPC classification number: C30B25/18 ,  C30B29/04 ,  H01L21/0242 ,  H01L21/02425 ,  H01L21/02433 ,  H01L21/02444 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02658

Abstract: There is disclosed a method for producing a substrate for single crystal diamond growth, comprising at least a step of preliminarily subjecting a substrate before single crystal diamond growth to a bias treatment for forming a diamond nucleus thereon by a direct-current discharge in which an electrode in a substrate side is a cathode, and wherein in the treatment, at least, a temperature of the substrate from 40 sec after an initiation of the bias treatment to an end of the bias treatment is held in a range of 800° C.±60° C. There can be provided a method for producing a substrate for single crystal diamond growth, by which a single crystal diamond can be grown more certainly.

Abstract translation: 公开了一种用于制造单晶金刚石生长用基板的方法，至少包括在单晶金刚石生长之前对基板进行预定处理以在其上形成金刚石核的偏压处理的步骤，其中直流放电是通过直流放电 在基板侧是阴极，并且其中在处理中，至少在偏置处理开始之后40秒至偏置处理结束之后，基板的温度保持在800℃的范围内 可以提供一种用于生产用于单晶金刚石生长的基底的方法，通过该方法可以更确定地生长单晶金刚石。

公开(公告)号：US20090046396A1

公开(公告)日：2009-02-19

申请号：US12295569

申请日：2007-03-30

Applicant: Takeshi Nagata ,  Hitoshi Noguchi

Inventor： Takeshi Nagata ,  Hitoshi Noguchi

IPC: G11B5/33 ,  G11B5/74

CPC classification number: G11B5/70 ,  G11B5/00821 ,  G11B5/3906 ,  G11B5/70626 ,  G11B5/70678

Abstract: The present invention relates to a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nomnagnetic support. A product, Mrδ, of a residual magnetization Mr of the magnetic layer and a thickness δ of the magnetic layer is equal to or greater than 2 mT•μm and equal to or less than 12 mT•μm, a squareness in a perpendicular direction is equal to or greater than 0.4 and equal to or less than 0.7, and a squareness in a longitudinal direction is equal to or greater than 0.3 but less than 0.6.

Abstract translation: 磁记录介质技术领域本发明涉及一种包括磁性层的磁性记录介质，该磁性层包含铁磁性粉末和在磁性载体上的粘合剂。 磁性层的剩余磁化强度Mr和磁性层的厚度δ的乘积Mrdelta等于或大于2mT.mum且等于或小于12mT.mum，垂直方向的正方形为 等于或大于0.4且等于或小于0.7，并且纵向方向上的矩形度等于或大于0.3但小于0.6。