公开(公告)号：US20060166447A1

公开(公告)日：2006-07-27

申请号：US11390892

申请日：2006-03-27

Applicant: Mark Doczy ,  Gilbert Dewey ,  Suman Datta ,  Sangwoo Pae ,  Justin Brask ,  Jack Kavalieros ,  Matthew Metz ,  Adrian Sherrill ,  Markus Kuhn ,  Robert Chau

Inventor： Mark Doczy ,  Gilbert Dewey ,  Suman Datta ,  Sangwoo Pae ,  Justin Brask ,  Jack Kavalieros ,  Matthew Metz ,  Adrian Sherrill ,  Markus Kuhn ,  Robert Chau

IPC: H01L21/336

CPC classification number: H01L21/0214 ,  H01L21/02142 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/28176 ,  H01L21/28194 ,  H01L21/3144 ,  H01L21/31691 ,  H01L28/56 ,  H01L29/517 ,  H01L29/518

Abstract: A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperature for a sufficient time to generate a gate dielectric with a graded dielectric constant.

公开(公告)号：US20060160342A1

公开(公告)日：2006-07-20

申请号：US11037860

申请日：2005-01-18

Applicant: Mark Doczy ,  Lawrence Wong ,  Valery Dubin ,  Justin Brask ,  Jack Kavalieros ,  Suman Datta ,  Matthew Metz ,  Robert Chau

Inventor： Mark Doczy ,  Lawrence Wong ,  Valery Dubin ,  Justin Brask ,  Jack Kavalieros ,  Suman Datta ,  Matthew Metz ,  Robert Chau

IPC: H01L21/3205

CPC classification number: H01L21/28194 ,  H01L21/28079 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833

Abstract: Complementary metal oxide semiconductor metal gate transistors may be formed by depositing a metal layer in trenches formerly inhabited by patterned gate structures. The patterned gate structures may have been formed of polysilicon in one embodiment. The trenches may be filled with metal by surface activating using a catalytic metal, followed by electroless deposition of a seed layer followed by superconformal filling bottom up.

Abstract translation: 互补金属氧化物半导体金属栅极晶体管可以通过在先前由图案化栅极结构居住的沟槽中沉积金属层来形成。 在一个实施例中，图案化栅极结构可以由多晶硅形成。 可以使用催化金属通过表面活化来填充沟槽，然后通过化学沉积种子层，然后从下向上超超融合填充来填充沟槽。

公开(公告)号：US07074680B2

公开(公告)日：2006-07-11

申请号：US10935784

申请日：2004-09-07

Applicant: Mark L. Doczy ,  Gilbert Dewey ,  Suman Datta ,  Sangwoo Pae ,  Justin K. Brask ,  Jack Kavalieros ,  Matthew V. Metz ,  Adrian B. Sherrill ,  Markus Kuhn ,  Robert S. Chau

Inventor： Mark L. Doczy ,  Gilbert Dewey ,  Suman Datta ,  Sangwoo Pae ,  Justin K. Brask ,  Jack Kavalieros ,  Matthew V. Metz ,  Adrian B. Sherrill ,  Markus Kuhn ,  Robert S. Chau

IPC: H01L21/336

CPC classification number: H01L21/0214 ,  H01L21/02142 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/28176 ,  H01L21/28194 ,  H01L21/3144 ,  H01L21/31691 ,  H01L28/56 ,  H01L29/517 ,  H01L29/518

Abstract: A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperature for a sufficient time to generate a gate dielectric with a graded dielectric constant.

公开(公告)号：US20060148150A1

公开(公告)日：2006-07-06

申请号：US11028167

申请日：2005-01-03

Applicant: Jack Kavalieros ,  Peter Vandervoorn ,  Kelin Kuhn ,  Justin Brask ,  Mark Doczy ,  Matthew Metz ,  Suman Datta ,  Robert Chau

Inventor： Jack Kavalieros ,  Peter Vandervoorn ,  Kelin Kuhn ,  Justin Brask ,  Mark Doczy ,  Matthew Metz ,  Suman Datta ,  Robert Chau

IPC: H01L29/15 ,  H01L31/0312 ,  H01L21/336 ,  H01L21/8234

CPC classification number: H01L29/66537 ,  H01L21/823807 ,  H01L21/823842 ,  H01L29/66545

Abstract: Higher mobility transistors may be achieved by removing a dummy metal gate electrode as part of a replacement metal gate process and doping the exposed channel region after source and drains have already been formed. As a result, a retrograde doping profile may be achieved in some embodiments in the channel region which is not adversely affected by subsequent high temperature processing. For example, after already forming the source and drains and thereafter doping the channel, temperature regimes greater than 900° C. may be avoided.

Abstract translation: 可以通过去除虚设金属栅电极作为替代金属栅极工艺的一部分并且在源极和漏极已经形成之后掺杂暴露的沟道区域来实现更高迁移率的晶体管。 结果，在一些实施例中可以在沟道区域中实现逆向掺杂分布，其不受后续高温处理的不利影响。 例如，在已经形成源极并且排出并且之后掺杂通道之后，可以避免大于900℃的温度方案。

公开(公告)号：US20060121742A1

公开(公告)日：2006-06-08

申请号：US11006438

申请日：2004-12-07

Applicant: Matthew Metz ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Justin Brask ,  Robert Chau

Inventor： Matthew Metz ,  Suman Datta ,  Jack Kavalieros ,  Mark Doczy ,  Justin Brask ,  Robert Chau

IPC: H01L21/336

CPC classification number: H01L29/517 ,  H01L21/02052 ,  H01L21/02172 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/3162 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/823462 ,  H01L29/495 ,  H01L29/513

Abstract: A method for making a semiconductor device is described. That method comprises applying an atomic layer chemical vapor deposition process to form a high-k gate dielectric layer directly on a hydrophobic surface of a substrate. The atomic layer chemical vapor deposition process initiates growth of the high-k gate dielectric layer in less than about twenty growth cycles.

Abstract translation: 描述制造半导体器件的方法。 该方法包括应用原子层化学气相沉积工艺以在衬底的疏水表面上直接形成高k栅介质层。 原子层化学气相沉积工艺在低于约20个生长周期中引发高k栅极电介质层的生长。

公开(公告)号：US20060091483A1

公开(公告)日：2006-05-04

申请号：US11242807

申请日：2005-10-03

Applicant: Mark Doczy ,  Justin Brask ,  Jack Kavalieros ,  Matthew Metz ,  Suman Datta ,  Robert Chau

Inventor： Mark Doczy ,  Justin Brask ,  Jack Kavalieros ,  Matthew Metz ,  Suman Datta ,  Robert Chau

IPC: H01L29/94 ,  H01L29/76

CPC classification number: H01L21/28097 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

Abstract: A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, forming a barrier layer on the high-k gate dielectric layer, and forming a fully silicided gate electrode on the barrier layer.

公开(公告)号：US20060079005A1

公开(公告)日：2006-04-13

申请号：US10964464

申请日：2004-10-12

Applicant: Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Suman Datta ,  Robert Chau

Inventor： Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Suman Datta ,  Robert Chau

IPC: H01L21/00 ,  H01L21/8238

CPC classification number: H01L21/823462

Abstract: A method for making a semiconductor device is described. That method comprises converting a hydrophobic surface of a substrate into a hydrophilic surface, and forming a high-k gate dielectric layer on the hydrophilic surface.

Abstract translation: 描述制造半导体器件的方法。 该方法包括将基底的疏水表面转化为亲水表面，并在亲水表面上形成高k栅介质层。

公开(公告)号：US20060071275A1

公开(公告)日：2006-04-06

申请号：US10956279

申请日：2004-09-30

Applicant: Justin Brask ,  Brian Doyle ,  Jack Kavalieros ,  Mark Doczy ,  Uday Shah ,  Robert Chau

Inventor： Justin Brask ,  Brian Doyle ,  Jack Kavalieros ,  Mark Doczy ,  Uday Shah ,  Robert Chau

IPC: H01L27/12

CPC classification number: H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/41791 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66795 ,  Y10S438/926 ,  Y10S438/974

Abstract: A semiconductor device comprising a semiconductor body having a top surface and a first and second laterally opposite sidewalls as formed on an insulating substrate is claimed. A gate dielectric is formed on the top surface of the semiconductor body and on the first and second laterally opposite sidewalls of the semiconductor body. A gate electrode is then formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the first and second laterally opposite sidewalls of the semiconductor body. The gate electrode comprises a metal film formed directly adjacent to the gate dielectric layer. A pair of source and drain regions are then formed in the semiconductor body on opposite sides of the gate electrode.

公开(公告)号：US20060057808A1

公开(公告)日：2006-03-16

申请号：US10939227

申请日：2004-09-10

Applicant: Robert Turkot ,  Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Uday Shah ,  Suman Datta ,  Robert Chau

Inventor： Robert Turkot ,  Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Uday Shah ,  Suman Datta ,  Robert Chau

IPC: H01L21/336 ,  H01L21/8234 ,  H01L21/3205

CPC classification number: H01L21/28079 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/82345 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/517

Abstract: A metal layer is formed on a dielectric layer, which is formed on a substrate. After forming a masking layer on the metal layer, the exposed sides of the dielectric layer are covered with a polymer diffusion barrier.

Abstract translation: 在形成在基板上的电介质层上形成金属层。 在金属层上形成掩模层之后，介电层的暴露侧面被聚合物扩散阻挡层覆盖。

公开(公告)号：US20060051957A1

公开(公告)日：2006-03-09

申请号：US10936114

申请日：2004-09-07

Applicant: Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Suman Datta ,  Uday Shah ,  Brian Doyle ,  Robert Chau

Inventor： Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Suman Datta ,  Uday Shah ,  Brian Doyle ,  Robert Chau

IPC: H01L21/4763

CPC classification number: H01L21/82385 ,  H01L21/28114 ,  H01L21/30608 ,  H01L21/823828 ,  H01L29/42376 ,  H01L29/66545 ,  Y10S438/926

Abstract: A method for making a semiconductor device is described. That method comprises forming on a substrate a dielectric layer and a sacrificial structure that comprises a first layer and a second layer, such that the second layer is formed on the first layer and is wider than the first layer. After the sacrificial structure is removed to generate a trench, a metal gate electrode is formed within the trench.

Abstract translation: 描述制造半导体器件的方法。 该方法包括在衬底上形成介电层和包括第一层和第二层的牺牲结构，使得第二层形成在第一层上并且比第一层更宽。 在除去牺牲结构以产生沟槽之后，在沟槽内形成金属栅电极。