公开(公告)号：US20100294957A1

公开(公告)日：2010-11-25

申请号：US12680620

申请日：2008-08-28

申请人： Tony Albrecht ,  Stefan Bader ,  Berthold Hahn

发明人： Tony Albrecht ,  Stefan Bader ,  Berthold Hahn

IPC分类号： H01L33/30

CPC分类号： H01L33/06 ,  H01L33/08 ,  H01L2924/0002 ,  H01L2924/00

摘要： Described is a radiation-emitting semiconductor body (1) with an active layer (2) for generation of radiation of a first wavelength (λ1) and a reemission layer (3) which comprises a quantum well structure (4) comprising a quantum layer structure (5) and a barrier layer structure (6). The reemission layer is intended for generation of incoherent radiation of a second wavelength (λ2) by absorption of the radiation of the first wavelength in the barrier layer structure.

摘要翻译： 描述了具有用于产生第一波长（λ1）的辐射的有源层（2）和包括量子阱结构（4）的辐射发射半导体本体（1），所述量子阱结构（4）包括量子层结构 （5）和阻挡层结构（6）。 再发射层旨在通过吸收阻挡层结构中的第一波长的辐射来产生第二波长（λ2）的非相干辐射。

公开(公告)号：US07709851B2

公开(公告)日：2010-05-04

申请号：US11578657

申请日：2005-04-14

申请人： Stefan Bader ,  Wolfgang Schmid

发明人： Stefan Bader ,  Wolfgang Schmid

IPC分类号： H01L29/22 ,  H01L29/227 ,  H01L33/00 ,  H01L27/15 ,  H01L29/267 ,  H01L31/12 ,  H01L29/16 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0203

CPC分类号： H01L33/405 ,  H01L33/465 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A thin-film light-emitting diode chip, in which the distance between a mirror layer (4) and a light-generating active zone (3) is set in such a way that a radiation emitted by the active zone (3) interferes with a light reflected from the mirror layer (4), the internal quantum efficiency of the active zone (3) being influenced by this interference and the emission characteristic of the active zone (3) of at least one preferred direction thereby being obtained.

摘要翻译： 一种薄膜发光二极管芯片，其中镜面层（4）和发光活性区域（3）之间的距离被设置成使得由活性区域（3）发射的辐射干扰 从镜面层（4）反射的光，活性区域（3）的内部量子效率受到该干涉的影响，从而得到至少一个优选方向的有源区域（3）的发射特性。

公开(公告)号：US07691659B2

公开(公告)日：2010-04-06

申请号：US11067349

申请日：2005-02-25

申请人： Stefan Bader ,  Berthold Hahn ,  Volker Härle ,  Hans-Jürgen Lugauer ,  Manfred Mundbrod-Vangerow ,  Dominik Eisert

发明人： Stefan Bader ,  Berthold Hahn ,  Volker Härle ,  Hans-Jürgen Lugauer ,  Manfred Mundbrod-Vangerow ,  Dominik Eisert

IPC分类号： H01L21/00

CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/22 ,  H01L33/32 ,  H01L33/44 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

摘要： This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4).The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.

摘要翻译： 本发明描述了一种基于GaN的辐射发射半导体元件，其半导体主体由不同GaN半导体层（1）的堆叠构成。 半导体本体具有第一主表面（3）和第二主表面（4），所产生的辐射通过第一主表面（3）发射，反射器（6）在第二主表面（4）上产生 ）。 本发明还描述了根据本发明的半导体部件的制造方法。 首先将中间层（9）施加到基板（8），然后施加构成部件的半导体主体的多个GaN层（1）。 然后分离基板（8）和中间层（9），并且在半导体本体的主表面上产生反射器（6）。

公开(公告)号：US07642565B2

公开(公告)日：2010-01-05

申请号：US10439084

申请日：2003-05-15

申请人： Stefan Bader ,  Berthold Hahn ,  Volker Härle ,  Hans-Jürgen Lugauer

发明人： Stefan Bader ,  Berthold Hahn ,  Volker Härle ,  Hans-Jürgen Lugauer

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/325 ,  H01S5/021 ,  H01S5/3054 ,  H01S5/34333

摘要： A radiation-emitting semiconductor component has a high p-type conductivity. The semiconductor body of the component includes a substrate, preferably an SiC-based substrate, on which a plurality of GaN-based layers have been formed. The active region of these layers is arranged between at least one n-conducting layer and a p-conducting layer. The p-conducting layer is grown in tensile-stressed form. The p-doping that is used is preferably Mg.

摘要翻译： 辐射发射半导体组件具有高p型电导率。 元件的半导体主体包括其上形成有多个GaN基层的衬底，优选为SiC基衬底。 这些层的有源区域被布置在至少一个n导电层和p导电层之间。 p导电层以拉伸应力形式生长。 使用的p掺杂优选为Mg。

公开(公告)号：US07556974B2

公开(公告)日：2009-07-07

申请号：US11463633

申请日：2006-08-10

申请人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimar

发明人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimar

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3407 ,  H01S5/3408 ,  H01S5/34333

摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.

摘要翻译： 具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于具有第一电子的氮化物半导体材料的第一组合物的器件阱层（6a） 提供具有与第一电子能量相比更高的电子能量的氮化物半导体材料的第二组合物的能量和势垒层（6b），然后通过辐射活性量子阱层（在生长方向上） 6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

公开(公告)号：US20080276869A1

公开(公告)日：2008-11-13

申请号：US12154897

申请日：2008-05-28

申请人： Stefan Bader ,  Matthias Peter ,  Alexander Walter ,  Volker Haerle

发明人： Stefan Bader ,  Matthias Peter ,  Alexander Walter ,  Volker Haerle

IPC分类号： C23C16/00

CPC分类号： C23C16/4581 ,  C23C16/4583 ,  C30B25/12

摘要： In order to achieve an as uniform as possible temperature over the entire surface of the substrate (2) during a temperature step and, in particular, during an epitaxy method, temperature equalization structures are incorporated in a substrate holder (1), on which the substrate (2) is located. A uniform temperature distribution on the substrate surface during the deposition of a semiconductor material reduces the emission wavelength gradient of the deposited semiconductor material. The temperature equalization structures produce specific temperature inhomogenelties in the substrate holder (1), and these smooth out the temperature profile of the substrate (2). For example, a groove (4) with a cooling effect and a support step (5) which produces a gap (8) between the substrate (2) and the substrate holder (1) are integrated in the edge area of the substrate holder (1).

摘要翻译： 为了在温度步骤期间，特别是在外延方法中，在衬底（2）的整个表面上实现尽可能均匀的温度，在衬底保持器（1）中并入温度均衡结构，其中 衬底（2）位于。 在沉积半导体材料期间在衬底表面上均匀的温度分布降低了沉积的半导体材料的发射波长梯度。 温度均衡结构在衬底保持器（1）中产生特定的温度不均匀性，并且这些平滑了衬底（2）的温度分布。 例如，具有冷却效果的槽（4）和在基板（2）和基板保持件（1）之间产生间隙（8）的支撑台阶（5）被集成在基板支架的边缘区域 1）。

公开(公告)号：US07442966B2

公开(公告)日：2008-10-28

申请号：US11585632

申请日：2006-10-24

申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/46

摘要： A semiconductor chip which emits electromagnetic radiation is presented. The chip includes an epitaxially produced semiconductor layer stack based on nitride semiconductor material, which includes an n-conducting semiconductor layer, a p-conducting semiconductor layer, and an electromagnetic radiation generating region, which is arranged between these two semiconductor layers. The chip further includes a base on which the semiconductor layer stack is arranged, and a mirror layer, which is arranged between the semiconductor layer stack and the base. The n-conducting semiconductor layer faces away from the base, and the n-conducting semiconductor layer or an outcoupling layer located on the n-conducting semiconductor layer has a radiation-outcoupling surface which, in turn, includes planar outcoupling sub-surfaces, which are positioned obliquely with respect to a main plane of the radiation-generating region and each form an angle of between 15° and 70° with this plane.

摘要翻译： 提出了发射电磁辐射的半导体芯片。 芯片包括基于氮化物半导体材料的外延生产的半导体层堆叠，其包括n导电半导体层，p导电半导体层和电磁辐射产生区域，其布置在这两个半导体层之间。 芯片还包括布置有半导体层堆叠的基底和布置在半导体层堆叠和基底之间的镜面层。 n导电半导体层背离基底，并且位于n导电半导体层上的n导电半导体层或输出耦合层具有辐射耦合表面，辐射输出耦合表面又包括平面输出耦合子表面，其中 相对于辐射产生区域的主平面倾斜地定位，并且每个与该平面形成15°至70°的角度。

公开(公告)号：US07425237B2

公开(公告)日：2008-09-16

申请号：US10696882

申请日：2003-10-30

申请人： Stefan Bader ,  Hans-Jurgen Lugauer ,  Volker Haerle ,  Berthold Hahn

发明人： Stefan Bader ,  Hans-Jurgen Lugauer ,  Volker Haerle ,  Berthold Hahn

IPC分类号： C30B23/00

CPC分类号： C30B25/02 ,  C30B25/10 ,  C30B29/403 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/324

摘要： The deposition of material (3) on a growth area (4) may be highly temperature-sensitive. In order to reduce temperature inhomogeneities on the growth area (4) of a substrate wafer (1), a thermal radiation absorption layer (2) is applied on a rear side (5) of the substrate wafer (1) lying opposite to the growth area (4). The thermal radiation absorption layer (2) exhibits good radiation absorption in the spectral range of a heating source. Since the deposition of semiconductor materials, in particular AllnGaN, may lead to (depending on the deposition temperature) different emission wavelengths of the deposited material, the use of a thermal radiation absorption layer (2) may produce a narrower emission wavelength distribution of the deposited material (3).

摘要翻译： 材料（3）在生长区域（4）上的沉积可能是高度温度敏感的。 为了降低衬底晶片（1）的生长区域（4）上的温度不均匀性，将热辐射吸收层（2）施加在与生长相对的衬底晶片（1）的后侧（5）上 区域（4）。 热辐射吸收层（2）在加热源的光谱范围内表现出良好的辐射吸收。 由于半导体材料（特别是AllnGaN）的沉积可能导致（取决于沉积温度）沉积材料的不同发射波长，所以使用热辐射吸收层（2）可以产生较小的沉积的发射波长分布 材料（3）。

公开(公告)号：US20070012944A1

公开(公告)日：2007-01-18

申请号：US11508504

申请日：2006-08-23

申请人： Stefan Bader ,  Berthold Hahn ,  Volker Harle ,  Hans-Jurgen Lugauer ,  Manfred Mundbrod-Vangerow

发明人： Stefan Bader ,  Berthold Hahn ,  Volker Harle ,  Hans-Jurgen Lugauer ,  Manfred Mundbrod-Vangerow

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/10 ,  H01L33/145 ,  H01L33/32 ,  H01L33/40 ,  H01L33/405 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence is provided on substantially the full area of its p-side with a reflective, bondable p-contact layer. The substrate is provided on its main surface facing away from the epitaxial layer sequence with a contact metallization that covers only a portion of said main surface, and the decoupling of light from the chip takes place via a bare region of the main surface of the substrate and via the chip sides. A further LED chip has epitaxial layers only. The p-type epitaxial layer is provided on substantially the full area of the main surface facing away from the n-conductive epitaxial layer with a reflective, bondable p-contact layer, and the n-conductive epitaxial layer is provided on its main surface facing away from the p-conductive epitaxial layer with an n-contact layer that covers only a portion of said main surface. The decoupling of light from the chip takes place via the bare region of the main surface of the n-conductive epitaxial layer and via the chip sides.

摘要翻译： 一种LED芯片，包括导电和无辐射基板，其中外延层序列在其p侧的基本上整个区域上设置有反射的，可粘合的p接触层。 衬底在其主表面上设置为背离外延层序列，接触金属化仅覆盖所述主表面的一部分，并且来自芯片的光的解耦通过衬底的主表面的裸露区域进行 并通过芯片侧面。 另外的LED芯片仅具有外延层。 p型外延层在主表面的大致整个区域上设置有背向n导电外延层的反射式可结合p接触层，并且n导电外延层设置在其主表面上 远离p导电外延层，其中n接触层仅覆盖所述主表面的一部分。 来自芯片的光的解耦通过n导电外延层的主表面的裸露区域和芯片侧进行。

公开(公告)号：US07129528B2

公开(公告)日：2006-10-31

申请号：US10671854

申请日：2003-09-25

申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/46

摘要： Semiconductor chip which emits electromagnetic radiation, and method for fabricating it. To improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface (131) is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack (1) based on GaN, which comprises an n-conducting semiconductor layer (11), a p-conducting semiconductor layer (13) and an electromagnetic radiation generating region (12) which is arranged between these two semiconductor layers (11, 13). The surface of the p-conducting semiconductor layer (13) which faces away from the radiation-generating region (12) is provided with three-dimensional pyramid-like structures (15). A mirror layer (40) is arranged over the whole of this textured surface. A textured reflection surface (131) is formed between the mirror layer (40) and the p-conducting semiconductor layer (13). The textured reflection surface (131) can increase the amount of light which is decoupled at the radiation-outcoupling surface (111) by virtue of the fact that a beam (3), after double reflection on the reflection surface (131), is more likely not to be totally reflected.

摘要翻译： 发射电磁辐射的半导体芯片及其制造方法。 为了提高发射电磁辐射的半导体芯片的光输出，在半导体芯片的p侧上集成纹理化反射面（131）。 半导体芯片具有基于GaN的外延生产的半导体层堆叠（1），其包括n导电半导体层（11），p导电半导体层（13）和电磁辐射产生区域（12），其布置 在这两个半导体层（11,13）之间。 背离辐射产生区域（12）的p导电半导体层（13）的表面设置有三维金字塔状结构（15）。 镜面层（40）布置在整个这个纹理表面上。 在镜面层（40）和导电性半导体层（13）之间形成纹理反射面（131）。 纹理反射表面（131）可以通过在反射表面（131）上双重反射之后的光束（3）更多地增加在辐射输出耦合表面（111）处解耦的光量 可能不会被完全反映。