公开(公告)号：US20120153498A1

公开(公告)日：2012-06-21

申请号：US13240533

申请日：2011-09-22

Applicant: Un-Byoung Kang ,  Kwang-chul Choi ,  Jung-Hwan Kim ,  Tae Hong Min ,  Hojin Lee ,  Minseung Yoon

Inventor： Un-Byoung Kang ,  Kwang-chul Choi ,  Jung-Hwan Kim ,  Tae Hong Min ,  Hojin Lee ,  Minseung Yoon

IPC: H01L23/48

CPC classification number: H01L21/4835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/49827 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0657 ,  H01L27/14618 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02166 ,  H01L2224/02313 ,  H01L2224/02372 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/024 ,  H01L2224/03462 ,  H01L2224/03466 ,  H01L2224/03602 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05026 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/06131 ,  H01L2224/06135 ,  H01L2224/06138 ,  H01L2224/06181 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/16147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29011 ,  H01L2224/32225 ,  H01L2224/45139 ,  H01L2224/48105 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: In a semiconductor device, an organic insulation pattern is disposed between first and second rerouting patterns. The organic insulation pattern may absorb the physical stress that occurs when the first and second rerouting patterns expand under heat. Since the organic insulation pattern is disposed between the first and second rerouting patterns, insulating properties can be increased relative to a semiconductor device in which a semiconductor pattern is disposed between rerouting patterns. Also, since a seed layer pattern is disposed between the first and second rerouting patterns and the organic insulation pattern and between the substrate and the organic insulation pattern, the adhesive strength of the first and second rerouting patterns is enhanced. This also reduces any issues with delamination. Also, the seed layer pattern prevents the metal that forms the rerouting pattern from being diffused to the organic insulation pattern. Therefore, a semiconductor device with enhanced reliability may be implemented.

Abstract translation: 在半导体器件中，有机绝缘图案设置在第一和第二重新布线图案之间。 有机绝缘图案可以吸收当第一和第二重新布线图案在加热下膨胀时发生的物理应力。 由于有机绝缘图案设置在第一和第二重新布线图案之间，所以可以相对于其中在重新布线图案之间设置半导体图案的半导体器件来增加绝缘性能。 此外，由于在第一和第二重新布线图案和有机绝缘图案之间以及基板和有机绝缘图案之间设置种子层图案，所以第一和第二布线图案的粘合强度提高。 这也减少了分层问题。 此外，种子层图案防止形成重新布线图案的金属扩散到有机绝缘图案。 因此，可以实现具有增强的可靠性的半导体器件。

公开(公告)号：US20120049352A1

公开(公告)日：2012-03-01

申请号：US13208455

申请日：2011-08-12

Applicant: Un-Byoung KANG ,  Jong-Joo Lee ,  Yong-Hoon Kim ,  Tae-Hong Min

Inventor： Un-Byoung KANG ,  Jong-Joo Lee ,  Yong-Hoon Kim ,  Tae-Hong Min

IPC: H01L23/498 ,  H01L23/48 ,  H01L21/60

CPC classification number: H01L23/49827 ,  H01L23/3128 ,  H01L23/367 ,  H01L23/3677 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/16146 ,  H01L2224/16235 ,  H01L2224/16245 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/15311

Abstract: A multi-chip package may include a package substrate, an interposer chip, a first semiconductor chip, a thermal dissipation structure and a second semiconductor chip. The interposer chip may be mounted on the package substrate. The first semiconductor chip may be mounted on the interposer chip. The first semiconductor chip may have a size smaller than that of the interposer chip. The thermal dissipation structure may be arranged on the interposer chip to surround the first semiconductor chip. The thermal dissipation structure may transfer heat in the first semiconductor chip to the interposer chip. The second semiconductor chip may be mounted on the first semiconductor chip. Thus, the heat in the first semiconductor chip may be effectively transferred to the interposer chip through the thermal dissipation line.

Abstract translation: 多芯片封装可以包括封装衬底，插入器芯片，第一半导体芯片，散热结构和第二半导体芯片。 插入器芯片可以安装在封装衬底上。 第一半导体芯片可以安装在插入器芯片上。 第一半导体芯片的尺寸可以小于插入器芯片的尺寸。 散热结构可以布置在插入器芯片上以围绕第一半导体芯片。 散热结构可以将第一半导体芯片中的热量传递到插入器芯片。 第二半导体芯片可以安装在第一半导体芯片上。 因此，可以通过散热线将第一半导体芯片中的热量有效地传递到插入器芯片。

公开(公告)号：US20120018885A1

公开(公告)日：2012-01-26

申请号：US12960843

申请日：2010-12-06

Applicant: Go Eun Lee ,  Taeje Cho ,  Un-Byoung Kang ,  Seongmin Ryu ,  Jung-Hwan Kim ,  Tae Hong Min

Inventor： Go Eun Lee ,  Taeje Cho ,  Un-Byoung Kang ,  Seongmin Ryu ,  Jung-Hwan Kim ,  Tae Hong Min

IPC: H01L23/498

CPC classification number: H01L23/481 ,  H01L23/49816 ,  H01L23/49855 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor apparatus includes a base substrate and a logic chip disposed on the base substrate. The logic chip includes a memory control circuit, a first through silicon via, and a second through silicon via. The memory control circuit is disposed on a first surface of a substrate of the logic chip, and a memory chip is disposed on a second surface of the substrate of the logic chip. The first through silicon via electrically connects the memory control circuit and the memory chip, the second through silicon via is electrically connected to the memory chip and is configured to transmit power for the memory chip, the second through silicon via is electrically insulated from the logic chip, and the first surface of the substrate of the logic chip faces the base substrate.

Abstract translation: 半导体装置包括基底基板和布置在基底基板上的逻辑芯片。 逻辑芯片包括存储器控制电路，第一通孔硅通孔和第二硅通孔。 存储器控制电路设置在逻辑芯片的基板的第一表面上，并且存储芯片设置在逻辑芯片的基板的第二表面上。 第一通孔硅通过电连接存储器控制电路和存储器芯片，第二通孔硅通孔电连接到存储器芯片，并被配置为向存储器芯片发送功率，第二通孔硅通孔与逻辑电绝缘 芯片，并且逻辑芯片的基板的第一表面面向基底。

公开(公告)号：US07015313B2

公开(公告)日：2006-03-21

申请号：US10476904

申请日：2002-05-04

Applicant: Ha-Hyung Kim ,  Jai-Il Jun ,  Bum-Soo Kim ,  Due-Hyeon Cho ,  Tae-Hong Min ,  Yun-Jung Kim ,  Chang-Soo Ryu

Inventor： Ha-Hyung Kim ,  Jai-Il Jun ,  Bum-Soo Kim ,  Due-Hyeon Cho ,  Tae-Hong Min ,  Yun-Jung Kim ,  Chang-Soo Ryu

IPC: C07K1/00 ,  C07K14/00 ,  C07K17/00

CPC classification number: C07K14/43509 ,  A61K38/00

Abstract: The present invention relates to a lectin protein prepared from Korean marine crab Philyra pisum, process for preparing the same and the use thereof. This protein can be used as a diagnosing agent or a carrier protein that chemically binds to various anti-cancer drugs owing to its capability that specifically recognizes N-glycolylneuraminic acid, and, in addition, used as an anti-cancer drug in view of its anti-proliferation effect.

Abstract translation: 本发明涉及由韩国海蟹Ph protein制备的凝集素蛋白，其制备方法及其用途。 由于其能够特异性识别N-羟乙酰神经氨酸的能力，该蛋白质可以用作化学结合各种抗癌药物的诊断剂或载体蛋白质，另外作为抗癌药物 抗增殖作用。