公开(公告)号：US10971383B2

公开(公告)日：2021-04-06

申请号：US16783702

申请日：2020-02-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Preetham P. Rao ,  Ananthkrishna Jupudi

IPC: G01K11/20 ,  G01K13/00 ,  H01L21/67 ,  G01K11/32 ,  H01L21/687 ,  H01L21/66 ,  H01L23/00 ,  H01L23/31

Abstract: Methods and apparatus for measuring the temperature of epoxy resin in an electronics package are provided herein. In some embodiments, apparatus for encapsulating an electronics package includes: a process chamber having a chamber body enclosing a processing volume; a substrate support having a support surface for receiving and supporting a substrate for forming an electronics package; and a temperature sensor to measure a temperature of an epoxy resin in an electronics package. The temperature sensor includes: an input apparatus including at least a light source disposed outside the chamber body to provide an excitation light energy to a portion of the epoxy resin; and an output apparatus including at least a signal analyzer disposed outside the chamber body to detect fluorescent light energy emitted by the portion of the epoxy resin and determine a temperature of the epoxy resin based on the excitation light energy and the fluorescent light energy.

公开(公告)号：USD913979S1

公开(公告)日：2021-03-23

申请号：US29703655

申请日：2019-08-28

Applicant: APPLIED MATERIALS, INC.

Designer： Sarath Babu ,  Ananthkrishna Jupudi ,  Yueh Sheng Ow ,  Junqi Wei ,  Kelvin Boh ,  Yuichi Wada ,  Kang Zhang

公开(公告)号：US20210074552A1

公开(公告)日：2021-03-11

申请号：US17010961

申请日：2020-09-03

Applicant: Applied Materials, Inc.

Inventor： Zhang Kang ,  Junqi Wei ,  Yueh Sheng Ow ,  Kelvin Boh ,  Yuichi Wada ,  Ananthkrishna Jupudi ,  Sarath Babu

IPC: H01L21/48 ,  H01L21/322 ,  H01L21/02 ,  H01L23/00 ,  H01L21/50 ,  H01L21/768 ,  H01L21/67

Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

公开(公告)号：US10945313B2

公开(公告)日：2021-03-09

申请号：US15165377

申请日：2016-05-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Saket Rathi ,  Ananthkrishna Jupudi ,  Mukund Sundararajan ,  Manjunath Handenahalli Venkataswamappa

IPC: H05B1/02 ,  H05B6/80 ,  H05B6/64 ,  F27B5/04 ,  F27B5/14

Abstract: In some embodiments, a process chamber for a microwave batch curing process includes: an annular body having an outer surface and an inner surface defining a central opening of the annular body, wherein the inner surface comprises a plurality of angled surfaces defining a first volume; a first lip extending radially outward from the outer surface of the annular body proximate a first end of the annular body; a second lip extending radially outward from the outer surface of the annular body proximate a second end of the annular body; an exhaust disposed between the first lip and the second lip and fluidly coupled to the first volume, wherein the exhaust comprises a plurality of first openings; a plurality of second openings fluidly coupled to the first volume, wherein the plurality of second openings are configured to expose the first volume to microwave energy; and one or more ports fluidly coupled to the first volume.

公开(公告)号：US20210066050A1

公开(公告)日：2021-03-04

申请号：US16664117

申请日：2019-10-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Sarath Babu ,  Ananthkrishna Jupudi ,  Yueh Sheng Ow ,  Junqi Wei ,  Kelvin Boh ,  Yuichi Wada ,  Kang Zhang

IPC: H01J37/32

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes a tubular body having a central opening configured to surround a substrate support, wherein sidewalls of the tubular body do not include any through holes; and a top plate coupled to an upper end of the tubular body and substantially covering the central opening, wherein the top plate has a gas inlet and has a diameter that is greater than an outer diameter of the tubular body, and wherein the tubular body extends straight down from the top plate.

公开(公告)号：US10851453B2

公开(公告)日：2020-12-01

申请号：US15950726

申请日：2018-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Cheng-Hsiung Tsai ,  Ananthkrishna Jupudi ,  Eiji Asahina ,  Sarath Babu

IPC: C23C14/52 ,  C23C14/02 ,  C23C14/54 ,  C23C14/56 ,  H01J37/34

Abstract: Methods and apparatus for detecting a shutter disk assembly in a process chamber using a number of sensors. A first, second, and third sensor in a shutter housing for a shutter disk assembly provide indications of a status of the shutter disk assembly. The indications are used in part to determine the operational status of the shutter disk assembly along with process information from a process controller. The operational status is then used to alter a process of the process chamber when necessary.

公开(公告)号：US10373860B2

公开(公告)日：2019-08-06

申请号：US14788127

申请日：2015-06-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Mukund Sundararajan ,  Ananthkrishna Jupudi ,  Manjunatha Koppa ,  Saket Rathi

IPC: F26B3/30 ,  F26B13/10 ,  H01L21/687

Abstract: Embodiments of batch processing apparatus and collapsible substrate support are provided herein. In some embodiments, a collapsible substrate support includes a base linearly moveable between a first position and a second position; and a first plurality of substrate support elements coupled to the base and including a lowermost substrate support element disposed in a fixed position with respect to the base and an uppermost substrate support element disposed above the lowermost substrate support element, wherein the uppermost substrate support element is linearly movable between a first position nearer to the lowermost substrate support element and a second position further from the lowermost substrate support element.

公开(公告)号：US10115573B2

公开(公告)日：2018-10-30

申请号：US14864031

申请日：2015-09-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Junqi Wei ,  Kirankumar Savandaiah ,  Ananthkrishna Jupudi ,  Zhitao Cao ,  Yueh Sheng Ow

IPC: H01J37/34 ,  H01J37/32

Abstract: Apparatus for extending process kit components lifetimes are disclosed. In some embodiments, a process kit includes: a first ring having an inner wall defining an inner diameter, an outer wall defining an outer diameter, an upper surface between the inner wall and the outer wall, and an opposing lower surface between the inner wall and the outer wall, wherein a first portion of the upper surface proximate the inner wall is concave, and wherein a second portion of the upper surface extends horizontally away from the first portion; and a second ring having an upper surface and an opposing lower surface, wherein a first portion of the lower surface is configured to rest upon the second portion of the first ring, wherein a second portion of the lower surface is convex and extends into but does not touch the concave first portion of the upper surface of the first ring.

公开(公告)号：US09960035B2

公开(公告)日：2018-05-01

申请号：US15399614

申请日：2017-01-05

Applicant: Applied Materials, Inc.

Inventor： Loke Yuen Wong ,  Ke Chang ,  Yueh Sheng Ow ,  Ananthkrishna Jupudi ,  Glen T. Mori ,  Aksel Kitowski ,  Arkajit Roy Barman

IPC: H01L21/31 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/67 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511

CPC classification number: H01L21/02345 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/67115

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

公开(公告)号：US09960023B2

公开(公告)日：2018-05-01

申请号：US14587967

申请日：2014-12-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Junqi Wei ,  Zhitao Cao ,  Yueh Sheng Ow ,  Ananthkrishna Jupudi ,  Kirankumar Savandaiah ,  Xin Wang ,  Sriskantharajah Thirunavukarasu

IPC: C23C14/34 ,  H01J37/34 ,  C22C1/04 ,  C22C27/04 ,  B22F3/12 ,  C22C14/00

CPC classification number: H01J37/3429 ,  B22F3/12 ,  B22F2998/10 ,  B22F2999/00 ,  C22C1/0458 ,  C22C14/00 ,  C22C27/04 ,  C23C14/3414 ,  H01J37/3426 ,  H01J37/3491 ,  B22F1/0003 ,  B22F3/02 ,  B22F3/10 ,  B22F2003/247 ,  B22F2202/13

Abstract: Embodiments of the present disclosure include methods and apparatus for controlling titanium-tungsten (TiW) target nodule formation. In some embodiments, a target includes: a source material comprising predominantly titanium (Ti) and tungsten (W), formed from a mixture of titanium powder and tungsten powder, wherein a grain size of a predominant quantity of the titanium powder is less than or equal to a grain size of a predominant quantity of the tungsten powder.