公开(公告)号：US11408075B2

公开(公告)日：2022-08-09

申请号：US16164392

申请日：2018-10-18

Applicant: Applied Materials, Inc.

Inventor： Adib Khan ,  Shankar Venkataraman ,  Jay D. Pinson, II ,  Jang-Gyoo Yang ,  Nitin Krishnarao Ingle ,  Qiwei Liang

IPC: C23C16/56 ,  C23C16/44 ,  C23C16/46 ,  C23C16/455 ,  H01L21/687 ,  H01L21/67 ,  H01L21/677 ,  H01L21/02

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

公开(公告)号：US11387071B2

公开(公告)日：2022-07-12

申请号：US16733299

申请日：2020-01-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Qiwei Liang ,  Srinivas D Nemani ,  Ellie Yieh ,  Douglas Buchberger ,  Chentsau Chris Ying

IPC: H01J37/09 ,  H01J37/305 ,  H01J37/20 ,  H01J37/30

Abstract: Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.

公开(公告)号：US20220139668A1

公开(公告)日：2022-05-05

申请号：US17572563

申请日：2022-01-10

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065 ,  C23C16/503 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas.

公开(公告)号：US11289331B2

公开(公告)日：2022-03-29

申请号：US16585929

申请日：2019-09-27

Applicant: Applied Materials, Inc.

Inventor： Jie Zhou ,  Erica Chen ,  Qiwei Liang ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/26

Abstract: A method of forming graphene layers is disclosed. A method of improving graphene deposition is also disclosed. Some methods are advantageously performed at lower temperatures. Some methods advantageously provide graphene layers with lower resistance. Some methods advantageously provide graphene layers in a relatively short period of time.

公开(公告)号：US20210375600A1

公开(公告)日：2021-12-02

申请号：US17333533

申请日：2021-05-28

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani ,  Keith Tatseun Wong ,  Antony K. Jan

IPC: H01J37/32 ,  C23C16/04 ,  H01L21/027 ,  H01L21/32

Abstract: The present disclosure generally relates to a substrate processing chamber, a substrate processing apparatus, and a substrate processing method for self-assembled monolayer (SAM) deposition of low vapor pressure organic molecules (OM) followed by further substrate processing, such as atomic layer deposition.

公开(公告)号：US20180352617A1

公开(公告)日：2018-12-06

申请号：US16045599

申请日：2018-07-25

Applicant: Applied Materials, Inc.

Inventor： Michael W. Stowell ,  Qiwei Liang

IPC: H05B6/80 ,  H05B6/72 ,  H05B6/70 ,  H05B6/64

CPC classification number: H05B6/80 ,  H05B6/6402 ,  H05B6/642 ,  H05B6/707 ,  H05B6/725 ,  H05B6/806

Abstract: In a processing reactor having a microwave plasma source, the microwave radiator is mounted on a rotary microwave coupling for continuous rotation.

公开(公告)号：US20180342373A1

公开(公告)日：2018-11-29

申请号：US15858789

申请日：2017-12-29

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/02

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas.

公开(公告)号：US10039157B2

公开(公告)日：2018-07-31

申请号：US14293123

申请日：2014-06-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Michael W. Stowell ,  Qiwei Liang

IPC: H05B6/74 ,  H05B6/72 ,  H05B6/80 ,  H05B6/64 ,  H05B6/70

CPC classification number: H05B6/80 ,  H05B6/6402 ,  H05B6/642 ,  H05B6/707 ,  H05B6/725 ,  H05B6/806

Abstract: In a processing reactor having a microwave plasma source, the microwave radiator is mounted on a rotary microwave waveguide coupling for continuous rotation, to form the reactor for processing a workpiece.

公开(公告)号：US09978564B2

公开(公告)日：2018-05-22

申请号：US14853838

申请日：2015-09-14

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dmitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: C23C16/455 ,  H01J37/32 ,  B05B1/00 ,  C23C16/452

CPC classification number: H01J37/32449 ,  B05B1/005 ,  B05B1/18 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/002 ,  H01L21/67069

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

公开(公告)号：US20170236691A1

公开(公告)日：2017-08-17

申请号：US15581357

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dmitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: H01J37/32 ,  B05B1/18 ,  H01L21/67 ,  B05B1/00 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01J37/32449 ,  B05B1/005 ,  B05B1/18 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/002 ,  H01L21/67069

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.