公开(公告)号：US11428521B2

公开(公告)日：2022-08-30

申请号：US17519641

申请日：2021-11-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve Bhattacharyya ,  Henricus Wilhelmus Maria Van Buel ,  Christophe David Fouquet ,  Hendrik Jan Hidde Smilde ,  Maurits Van der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Xing Lan Liu ,  Johannes Marcus Maria Beltman ,  Andreas Fuchs ,  Omer Abubaker Omer Adam ,  Michael Kubis ,  Martin Jacobus Johan Jak

IPC: G01B11/14 ,  G03F7/20

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

公开(公告)号：US11320750B2

公开(公告)日：2022-05-03

申请号：US17032249

申请日：2020-09-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Leon Paul Van Dijk ,  Victor Emanuel Calado ,  Xing Lan Liu ,  Richard Johannes Franciscus Van Haren

IPC: G05B15/02 ,  G03F7/20 ,  G03F9/00

Abstract: A method of determining an optimal operational parameter setting of a metrology system is described. Free-form substrate shape measurements are performed. A model is applied, transforming the measured warp to modeled warp scaling values. Substrates are clamped to a chuck, causing substrate deformation. Alignment marks of the substrates are measured using an alignment system with four alignment measurement colors. Scaling values thus obtained are corrected with the modeled warp scaling values to determine corrected scaling values. An optimal alignment measurement color is determined, based on the corrected scaling values. Optionally, scaling values are selected that were measured using the optimal alignment measurement color and a substrate grid is determined using the selected scaling values. A substrate may be exposed using the determined substrate grid to correct exposure of the substrate.

公开(公告)号：US11300887B2

公开(公告)日：2022-04-12

申请号：US16463057

申请日：2017-11-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard Johannes Franciscus Van Haren ,  Victor Emanuel Calado ,  Leon Paul Van Dijk ,  Roy Werkman ,  Everhardus Cornelis Mos ,  Jochem Sebastiaan Wildenberg ,  Marinus Jochemsen ,  Bijoy Rajasekharan ,  Erik Jensen ,  Adam Jan Urbanczyk

IPC: G03F7/20

Abstract: A method to change an etch parameter of a substrate etching process, the method including: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.

公开(公告)号：US10915689B2

公开(公告)日：2021-02-09

申请号：US15769338

申请日：2016-09-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter Ten Berge ,  Everhardus Cornelis Mos ,  Richard Johannes Franciscus Van Haren ,  Peter Hanzen Wardenier ,  Erik Jensen ,  Bernardo Kastrup ,  Michael Kubis ,  Johannes Catharinus Hubertus Mulkens ,  David Frans Simon Deckers ,  Wolfgang Helmut Henke ,  Joungchel Lee

IPC: G06F17/50 ,  G03F1/00 ,  G06F30/398 ,  G03F7/20 ,  G03F1/72 ,  G06F119/22 ,  G06F119/18 ,  G03B27/68

Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.

公开(公告)号：US10324379B2

公开(公告)日：2019-06-18

申请号：US15737400

申请日：2016-06-07

Applicant: ASML Netherlands B.V.

Inventor： Cedric Marc Affentauschegg ,  Milenko Jovanovic ,  Richard Johannes Franciscus Van Haren ,  Reiner Maria Jungblut ,  Robertus Wilhelmus Van Der Heijden

IPC: G03B27/68 ,  G03F7/20

Abstract: A method to form on a substrate a first target comprising a first feature and a second target comprising a second feature, wherein the forming of the targets comprises applying the first feature and the second feature to the substrate by projection of a radiation beam through a production patterning device installed in a lithographic apparatus, the features corresponding to one or more features of the patterning device, and controlling a configuration of the lithographic apparatus to induce an aberration component, such that the first feature is applied to the substrate using a first value of an induced aberration component and the second feature is applied to the substrate using a second, different value of the induced aberration component; measuring a property of the targets; and using the measurements to determine a sensitivity of the property of the targets to changes in value of the induced aberration component.

公开(公告)号：US20180253015A1

公开(公告)日：2018-09-06

申请号：US15915674

申请日：2018-03-08

Applicant: ASML Netherlands B.V.

Inventor： Alexander Ypma ,  Jasper Menger ,  David Deckers ,  David Han ,  Adrianus Cornelis Matheus Koopman ,  Irina Lyulina ,  Scott Anderson Middlebrooks ,  Richard Johannes Franciscus Van Haren ,  Jochem Sebastiaan Wildenberg

IPC: G03F7/20 ,  G06F17/30 ,  G03F9/00

CPC classification number: G03F7/70616 ,  G03F7/70508 ,  G03F7/70525 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F9/7092 ,  G06F17/30572

Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in said multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

公开(公告)号：US10025193B2

公开(公告)日：2018-07-17

申请号：US15109784

申请日：2014-10-23

Applicant: ASML Netherlands B.V.

Inventor： Hakki Ergün Cekli ,  Xing Lan Liu ,  Daan Maurits Slotboom ,  Wim Tjibbo Tel ,  Stefan Cornelis Theodorus Van Der Sanden ,  Richard Johannes Franciscus Van Haren

IPC: G03F7/20 ,  G03F9/00

Abstract: A lithographic apparatus applies a pattern repeatedly to target portions across a substrate. Prior to applying the pattern an alignment sensor measures positions of marks in the plane of the substrate and a level sensor measures height deviations in a direction normal to the plane of the substrate. The apparatus applies the pattern to the substrate while positioning the applied pattern using the positions measured by the alignment sensor and using the height deviations measured by the level sensor. The apparatus is further arranged to calculate and apply corrections in the positioning of the applied pattern, based on derivatives of the measured height deviations. The corrections may be calculated on an intrafield and/or interfield basis. The corrections may be based on changes between the observed height deviations and height deviations measured previously on the same substrate.

公开(公告)号：US09879988B2

公开(公告)日：2018-01-30

申请号：US15013340

申请日：2016-02-02

Applicant: ASML Netherlands B.V.

Inventor： Xing Lan Liu ,  Hendrik Jan Hidde Smilde ,  Yue-Lin Peng ,  Hakki Ergün Cekli ,  Josselin Pello ,  Richard Johannes Franciscus Van Haren

IPC: G01B11/00 ,  G03B27/32 ,  G03B27/54 ,  G03B27/74 ,  G01B11/27 ,  G03F7/20 ,  G03F9/00

CPC classification number: G01B11/272 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7007

Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated computer program and apparatuses. The method comprises providing a plurality of target structures on a substrate, each target structure comprising a first structure and a second structure on different layers of the substrate. Each target structure is measured with measurement radiation to obtain a measurement of target asymmetry in the target structure, the target asymmetry comprising an overlay contribution due to misalignment of the first and second structures, and a structural contribution due to structural asymmetry in at least the first structure. A structural asymmetry characteristic relating to the structural asymmetry in at least the first structure of each target structure is obtained, the structural asymmetry characteristic being independent of at least one selected characteristic of the measurement radiation. The measurement of target asymmetry and the structural asymmetry characteristic is then used to determine the overlay contribution of the target asymmetry of each target structure.

公开(公告)号：US20150205213A1

公开(公告)日：2015-07-23

申请号：US14420311

申请日：2013-06-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Hakki Ergun Cekli ,  Irina Lyulina ,  Manfred Gawein Tenner ,  Richard Johannes Franciscus Van Haren ,  Stefan Cornelis Theodorus Van Der Sanden

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70258 ,  G03F7/70483 ,  G03F7/70616 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7019

Abstract: A deformation pattern recognition method including providing one or more deformation patterns, each deformation pattern being associated with a deformation of a substrate that may be caused by a processing device; transferring a first pattern to a substrate, the first pattern including at least N alignment marks, wherein each alignment mark is positioned at a respective predefined nominal position; processing the substrate; measuring a position of N alignment marks and determining an alignment mark displacement for the N alignment marks by comparing the respective nominal position with the respective measured position; fitting at least one deformation pattern to the measured alignment mark displacements; determining an accuracy value for each fitted deformation pattern, the accuracy value being representative of the accuracy of the corresponding fit; using the determined accuracy value, determining whether an associated deformation pattern is present.

Abstract translation: 一种变形图案识别方法，包括提供一个或多个变形图案，每个变形图案与可由处理装置引起的基板的变形相关联; 将第一图案转印到基板，所述第一图案至少包括N个对准标记，其中每个对准标记位于相应的预定标称位置; 处理基板; 通过将相应的标称位置与相应的测量位置进行比较来测量N个对准标记的位置并确定N个对准标记的对准标记位移; 将至少一个变形图案拟合到所测量的对准标记位移; 确定每个拟合变形模式的精度值，精度值代表相应拟合精度; 使用所确定的精度值，确定是否存在相关联的变形模式。