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    Fuel cell device
    41.
    发明授权
    Fuel cell device 有权

    公开(公告)号：US08178250B2

    公开(公告)日：2012-05-15

    申请号：US12414699

    申请日：2009-03-31

    Applicant: Anthony M. Chiu

    Inventor： Anthony M. Chiu

    IPC: H01M8/06 ,  H01M8/10 ,  H01M8/04

    CPC classification number: H01M8/0612 ,  H01M8/04089 ,  H01M8/04201 ,  H01M8/04291 ,  H01M8/0656 ,  H01M8/186 ,  H01M2008/1095 ,  Y02E60/528

    Abstract: A fuel cell device includes a housing containing a fuel processor that generates fuel gas and a fuel cell having electrodes forming an anode and cathode, and an ion exchange electrolyte positioned between the electrodes. The housing can be formed as first and second cylindrically configured outer shell sections that form a battery cell that is configured similar to a commercially available battery cell. A thermal-capillary pump can be operative with the electrodes and an ion exchange electrolyte, and operatively connected to the fuel processor. The electrodes are configured such that heat generated between the electrodes forces water to any cooler edges of the electrodes and is pumped by capillary action back to the fuel processor to supply water for producing hydrogen gas. The electrodes can be formed on a silicon substrate that includes a flow divider with at least one fuel gas input channel that can be controlled by a MEMS valve.

    FUEL CELL DEVICE
    42.
    发明申请
    FUEL CELL DEVICE 有权

    公开(公告)号：US20090208794A1

    公开(公告)日：2009-08-20

    申请号：US12414704

    申请日：2009-03-31

    Applicant: Anthony M. Chiu

    Inventor： Anthony M. Chiu

    IPC: H01M8/04

    CPC classification number: H01M8/0612 ,  H01M8/04089 ,  H01M8/04201 ,  H01M8/04291 ,  H01M8/0656 ,  H01M8/186 ,  H01M2008/1095 ,  Y02E60/528

    Abstract: A fuel cell device includes a housing containing a fuel processor that generates fuel gas and a fuel cell having electrodes forming an anode and cathode, and an ion exchange electrolyte positioned between the electrodes. The housing can be formed as first and second cylindrically configured outer shell sections that form a battery cell that is configured similar to a commercially available battery cell. A thermal-capillary pump can be operative with the electrodes and an ion exchange electrolyte, and operatively connected to the fuel processor. The electrodes are configured such that heat generated between the electrodes forces water to any cooler edges of the electrodes and is pumped by capillary action back to the fuel processor to supply water for producing hydrogen gas. The electrodes can be formed on a silicon substrate that includes a flow divider with at least one fuel gas input channel that can be controlled by a MEMS valve.

    Method of making optical elements for an optical disc system
    44.
    发明授权
    Method of making optical elements for an optical disc system 有权
    制造光盘系统的光学元件的方法

    公开(公告)号：US07323114B2

    公开(公告)日：2008-01-29

    申请号：US11248784

    申请日：2005-10-12

    Applicant: Anthony M. Chiu ,  Danielle A. Thomas

    Inventor： Anthony M. Chiu ,  Danielle A. Thomas

    IPC: B29D11/00

    CPC classification number: G11B7/1372 ,  G02B6/4214 ,  G02B6/43 ,  G11B7/123

    Abstract: A large diameter glass wafer is pattern-etched to provide a plurality of elongated lens elements arranged side-by-side, the etching leaving small rods in place to keep the lens elements connected to the wafer during mirror processing. The etching provides curved surfaces for lenses and flat surfaces for mirrors. The mirrors are formed by selectively depositing reflective material on the flat surfaces. The reflective material may comprise an oxide, nitride, sulfide, or fluoride of a transition metal. The flat surfaces that define the mirrors are disposed at angles to the longitudinal dimension of each lens element. In use in an optical disc system, light from a laser diode is reflected by the mirrors and directed at an optical disc through a first lens. Light returns from the disc on a parallel path through a second lens, passes through the lens element, and is directed at a photodetector. The system may include an elongated base element attached to each lens element. Pattern-etching of a second glass wafer provides multiple base elements per wafer. Each base element may include an angled surface on which a reflective material is deposited to form a mirror for reflecting laser light during use in the system.

    Abstract translation: 大直径玻璃晶片被图案蚀刻以提供并排设置的多个细长透镜元件，蚀刻将小棒留在适当位置，以在镜面处理期间保持透镜元件连接到晶片。 蚀刻为镜子提供弯曲表面和镜子的平坦表面。 反射镜通过在平坦表面上选择性地沉积反射材料而形成。 反射材料可以包含过渡金属的氧化物，氮化物，硫化物或氟化物。 限定反射镜的平坦表面设置成与每个透镜元件的纵向尺寸成角度。 在光盘系统中使用时，来自激光二极管的光被反射镜反射并通过第一透镜指向光盘。 光从平行路径通过第二透镜从光盘返回，穿过透镜元件，并被引导到光电检测器。 该系统可以包括附接到每个透镜元件的细长基部元件。 第二玻璃晶片的图案蚀刻为每个晶片提供多个基底元件。 每个基本元件可以包括成角度的表面，反射材料沉积在该倾斜表面上以形成用于在系统中使用期间反射激光的反射镜。

    Embedded flat film molding
    45.
    发明授权
    Embedded flat film molding 有权
    嵌入式平膜成型

    公开(公告)号：US07202110B2

    公开(公告)日：2007-04-10

    申请号：US11005868

    申请日：2004-12-06

    Applicant: Anthony M. Chiu ,  Harry Michael Siegel

    Inventor： Anthony M. Chiu ,  Harry Michael Siegel

    IPC: H01L21/00

    CPC classification number: G06K9/0002

    Abstract: A flat filter layer is received between upper and lower mold portions of a mold for packaging an integrated circuit sensor device, held by the mold over and in contact with the integrated circuit's sensing surface, in light compression between the sensing surface and a mold surface. The filter layer includes slots allowing passage of injected encapsulating material to cover the integrated circuit die, with overlap portions embedded in the encapsulating material, while preventing such encapsulating material from flowing onto the sensing surface. The filter layer may be, for example, a liquid and/or light filter, and may include a protective or supportive backing. The filter is thus affixed to the packaged integrated circuit sensor device, while mold residue is reduced and mold life extended.

    Abstract translation: 在模具的上模具部分和下模具部分之间容纳平坦的过滤层，用于将由模具保持的集成电路传感器装置封装在集成电路的感测表面上并与集成电路的感测表面接触，以在感测表面和模具表面之间的轻压缩。 过滤层包括允许注入的封装材料通过以覆盖集成电路管芯的槽，其中重叠部分嵌入在封装材料中，同时防止这种封装材料流入感测表面。 过滤层可以是例如液体和/或光过滤器，并且可以包括保护性或支撑性背衬。 因此，过滤器被固定到封装的集成电路传感器装置上，同时减少模具残渣并延长模具寿命。

    Silver metallization by damascene method
    49.
    发明授权
    Silver metallization by damascene method 有权
    银金属化通过镶嵌法

    公开(公告)号：US06410985B1

    公开(公告)日：2002-06-25

    申请号：US09563958

    申请日：2000-05-02

    Applicant: Tsiu C. Chan ,  Anthony M. Chiu ,  Gregory C. Smith

    Inventor： Tsiu C. Chan ,  Anthony M. Chiu ,  Gregory C. Smith

    IPC: H01L2348

    CPC classification number: H01L21/76873 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53242 ,  H01L23/53252 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Silver interconnects are formed by etching deep grooves into an insulating layer over the contact regions, exposing portions of the contact regions and defining the interconnects. The grooves are etched with a truncated V- or U-shape, wider at the top than at any other vertical location, and have a minimum width of 0.25 &mgr;m or less. An optional adhesion layer and a barrier layer are sputtered onto surfaces of the groove, including the sidewalls, followed by sputter deposition of a seed layer. Where aluminum is employed as the seed layer, a zincating process may then be optionally employed to promote adhesion of silver to the seed layer. The groove is then filled with silver by plating in a silver solution, or with silver and copper by plating in a copper solution followed by plating in a silver solution. The filled groove which results does not exhibit voids ordinarily resulting from sputter deposition of metal into such narrow, deep grooves, although seams may be intermittently present in portions of the filled groove where metal plated from the opposing sidewalls did not fuse flawlessly at the point of convergence. Portions of the silver and other layers above the insulating material are then removed by chemical-mechanical polishing, leaving a silver interconnect connected to the exposed portion of the contact region and extending over adjacent insulating regions to another contact region or a bond pad. Silver interconnects thus formed may have smaller cross-sections, and thus a greater density in a given area, than conventional metallic interconnects.

    Abstract translation: 通过在接触区域上将深槽蚀刻成绝缘层，暴露接触区域的部分并限定互连形成银互连。 凹槽被蚀刻成具有截顶的V形或U形，在顶部比在任何其它垂直位置处更宽，并且具有0.25μm或更小的最小宽度。 将可选的粘合层和阻挡层溅射到包括侧壁的凹槽的表面上，然后溅射沉积种子层。 当铝用作种子层时，可以任选地使用锌化工艺以促进银与种子层的粘附。 然后通过在银溶液中电镀银，或者通过在铜溶液中电镀银和铜，然后在银溶液中电镀来填充槽。 导致的填充凹槽通常不会由金属溅射沉积到这样窄的深沟槽中而产生空隙，尽管接缝可以间歇地存在于填充凹槽的部分中，其中从相对的侧壁电镀的金属在 收敛。 然后通过化学机械抛光去除绝缘材料上方的银和其它层的部分，留下连接到接触区域的暴露部分并在相邻绝缘区域上延伸到另一接触区域或接合焊盘的银互连。 如此形成的银互连可以具有比常规金属互连更小的横截面，并且因此在给定区域中具有更大的密度。

    Silver metallization by damascene method
    50.
    发明授权
    Silver metallization by damascene method 失效
    银金属化通过镶嵌法

    公开(公告)号：US6100194A

    公开(公告)日：2000-08-08

    申请号：US102431

    申请日：1998-06-22

    Applicant: Tsiu C. Chan ,  Anthony M. Chiu ,  Gregory C. Smith

    Inventor： Tsiu C. Chan ,  Anthony M. Chiu ,  Gregory C. Smith

    IPC: C23C18/31 ,  C25D3/46 ,  C25D7/12 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532 ,  H01L21/4763

    CPC classification number: H01L21/76873 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53242 ,  H01L23/53252 ,  H01L2221/1089 ,  H01L2924/0002

    Abstract: Silver interconnects are formed by etching deep grooves into an insulating layer over the contact regions, exposing portions of the contact regions and defining the interconnects. The grooves are etched with a truncated V- or U-shape, wider at the top than at any other vertical location, and have a minimum width of 0.25 .mu.m or less. An optional adhesion layer and a barrier layer are sputtered onto surfaces of the groove, including the sidewalls, followed by sputter deposition of a seed layer. Where aluminum is employed as the seed layer, a zincating process may then be optionally employed to promote adhesion of silver to the seed layer. The groove is then filled with silver by plating in a silver solution, or with silver and copper by plating in a copper solution followed by plating in a silver solution. The filled groove which results does not exhibit voids ordinarily resulting from sputter deposition of metal into such narrow, deep grooves, although seams may be intermittently present in portions of the filled groove where metal plated from the opposing sidewalls did not fuse flawlessly at the point of convergence. Portions of the silver and other layers above the insulating material are then removed by chemical-mechanical polishing, leaving a silver interconnect connected to the exposed portion of the contact region; and extending over adjacent insulating regions to another contact region or a bond pad. Silver interconnects thus formed may have smaller cross-sections, and thus a greater density in a given area, than conventional metallic interconnects.

    Abstract translation: 通过在接触区域上将深槽蚀刻成绝缘层，暴露接触区域的部分并限定互连形成银互连。 蚀刻具有截断的V形或U形的凹槽，在顶部比在任何其它垂直位置处更宽，并且具有0.25μm或更小的最小宽度。 将可选的粘合层和阻挡层溅射到包括侧壁的凹槽的表面上，然后溅射沉积种子层。 当铝用作种子层时，可以任选地使用锌化工艺以促进银与种子层的粘附。 然后通过在银溶液中电镀银，或者通过在铜溶液中电镀银和铜，然后在银溶液中电镀来填充槽。 导致的填充凹槽通常不会由金属溅射沉积到这样窄的深沟槽中而产生空隙，尽管接缝可以间歇地存在于填充凹槽的部分中，其中从相对的侧壁电镀的金属在 收敛。 然后通过化学机械抛光去除绝缘材料上方的银和其它层的部分，留下连接到接触区域的暴露部分的银互连; 并且在相邻的绝缘区域上延伸到另一个接触区域或接合焊盘。 如此形成的银互连可以具有比常规金属互连更小的横截面，并且因此在给定区域中具有更大的密度。

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