公开(公告)号：US20210325776A1

公开(公告)日：2021-10-21

申请号：US16849393

申请日：2020-04-15

Applicant: Applied Materials, Inc.

Inventor： Roman GOUK ,  Jean DELMAS ,  Steven VERHAVERBEKE ,  Chintan BUCH

IPC: G03F7/00 ,  H01L21/768 ,  H01L21/027

Abstract: An imprint lithography stamp includes a stamp body having a patterned surface and formed from a fluorinated ethylene propylene copolymer. The imprint lithography stamp further includes a backing plate with a plurality of through-holes with portions of the stamp body extending into the through-holes to adhere the stamp body to the backing plate. The patterned surface of the stamp body has a plurality of protrusions extending from the stamp body, which are used to form high aspect ratio features at high processing temperatures. A mold design for forming the imprint lithography stamp and an injection molding process for forming the imprint lithography stamp are also provided.

公开(公告)号：US20190287823A1

公开(公告)日：2019-09-19

申请号：US16422477

申请日：2019-05-24

Applicant: Applied Materials, Inc.

Inventor： Steven VERHAVERBEKE ,  Han-Wen CHEN ,  Roman GOUK

IPC: H01L21/67 ,  B08B7/00 ,  B08B3/08 ,  H01L21/02 ,  H01L21/677

Abstract: Embodiments of the present disclosure generally relate to a method of cleaning a substrate. More specifically, embodiments of the present disclosure relate to a method of cleaning a substrate in a manner that reduces or eliminates the negative effects of line stiction between semiconductor device features. In an embodiment, a method of cleaning a substrate includes exposing a substrate having high aspect ratio features formed thereon to a first solvent to remove an amount of a residual cleaning solution disposed on a surface of the substrate, exposing the surface of the substrate to a second solvent to remove the first solvent disposed on the surface of the substrate, exposing the surface of the substrate to a supercritical fluid to remove the second solvent disposed on the surface of the substrate, and exposing the surface of the substrate to electromagnetic energy.

公开(公告)号：US20190214247A1

公开(公告)日：2019-07-11

申请号：US16352631

申请日：2019-03-13

Applicant: Applied Materials, Inc.

Inventor： Roman GOUK ,  Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Jean DELMAS

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/02101 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/6719

Abstract: Embodiments described herein generally relate to a processing chamber having a reduced volume for performing supercritical drying processes or other phase transition processes. The chamber includes a substrate support moveably disposed on a first track and a door moveably disposed on a second track. The substrate support and door may be configured to move independently of one another and the chamber may be configured to minimize vertical movement of the substrate within the chamber.

公开(公告)号：US20190181019A1

公开(公告)日：2019-06-13

申请号：US16276866

申请日：2019-02-15

Applicant: Applied Materials, Inc.

Inventor： Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Roman GOUK ,  Guan Huei SEE ,  Yu GU ,  Arvind SUNDARRAJAN ,  Kyuil CHO ,  Colin Costano NEIKIRK ,  Boyi FU

IPC: H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L23/13 ,  H01L23/00 ,  H01L21/48 ,  H01L21/311 ,  H01L21/027 ,  H01L21/02 ,  G03F7/00

Abstract: Embodiments of the present disclosure generally describe methods for minimizing the occurrence and the extent of die shift during the formation of a reconstituted substrate in fan-out wafer level packaging processes and reconstituted substrates formed therefrom. Die shift is a process defect that occurs when a die (device) moves from its intended position within a reconstituted substrate during the formation thereof. Generally, the reconstituted substrates disclosed herein include a device immobilization layer and/or a plurality of device immobilization beads over and/or adjacent to a plurality of singular devices (individual dies), and a cured epoxy molding compound formed there over. The device immobilization layer and/or the plurality of device immobilization beads immobilize the plurality of singular devices and prevents them from shifting on the carrier substrate during the molding process.

公开(公告)号：US20190057879A1

公开(公告)日：2019-02-21

申请号：US16046119

申请日：2018-07-26

Applicant: Applied Materials, Inc.

Inventor： Jean DELMAS ,  Steven VERHAVERBEKE ,  Kurtis LESCHKIES

IPC: H01L21/324 ,  H01L21/67

Abstract: Embodiments of the disclosure relate to an apparatus and method for annealing semiconductor substrates. In one embodiment, a batch processing chamber is disclosed. The batch processing chamber includes a chamber body enclosing a processing region, a gas panel configured to provide a processing fluid into the processing region, a condenser fluidly connected to the processing region and a temperature-controlled fluid circuit configured to maintain the processing fluid at a temperature above a condensation point of the processing fluid. The processing region is configured to retain a plurality of substrates during processing. The condenser is configured to condense the processing fluid into a liquid phase.

公开(公告)号：US20170213762A1

公开(公告)日：2017-07-27

申请号：US15382945

申请日：2016-12-19

Applicant: Applied Materials, Inc.

Inventor： Roman GOUK ,  Steven VERHAVERBEKE

IPC: H01L21/768

CPC classification number: H01L21/76873 ,  C23C18/1653 ,  C23C18/32 ,  C23C18/40 ,  C23C18/54 ,  C25D3/38 ,  C25D3/48 ,  C25D5/022 ,  C25D7/123 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76855 ,  H01L21/76879 ,  H01L21/76898

Abstract: A method and apparatus for processing a silicon substrate are provided. In some implementations, the method comprises providing a silicon substrate having an aperture containing an exposed silicon contact surface at a bottom of the aperture, depositing a metal seed layer on the exposed silicon contact surface and exposing the silicon substrate to an electroplating process by flowing a current through a backside of the silicon substrate to form a metal layer on the metal seed layer.

公开(公告)号：US20170206922A1

公开(公告)日：2017-07-20

申请号：US15474851

申请日：2017-03-30

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis BENCHER ,  Roman GOUK ,  Steven VERHAVERBEKE ,  Li-Qun XIA ,  Yong-Won LEE ,  Matthew D. SCOTNEY-CASTLE ,  Martin A. HILKENE ,  Peter I. PORSHNEV

IPC: G11B5/85 ,  G11B5/74

CPC classification number: G11B5/85 ,  G11B5/743 ,  G11B5/855

Abstract: A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

公开(公告)号：US20170140983A1

公开(公告)日：2017-05-18

申请号：US15347948

申请日：2016-11-10

Applicant: Applied Materials, Inc.

Inventor： Kurtis LESCHKIES ,  Steven VERHAVERBEKE

IPC: H01L21/768 ,  C23C16/50 ,  H01L21/67 ,  C23C16/52 ,  C23C16/56 ,  C23C16/455 ,  C23C16/48

CPC classification number: H01L21/76879 ,  C23C16/02 ,  C23C16/045 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/482 ,  C23C16/50 ,  C23C16/52 ,  C23C16/56 ,  H01L21/67075 ,  H01L21/76802 ,  H01L21/76883

Abstract: A method of device processing. The method may include providing a cavity in a layer, directing energetic flux to a bottom surface of the cavity, performing an exposure of the cavity to a moisture-containing ambient, and introducing a fill material in the cavity using an atomic layer deposition (ALD) process, wherein the fill material is selectively deposited on the bottom surface of the cavity with respect to a sidewall of the cavity.

公开(公告)号：US20170098537A1

公开(公告)日：2017-04-06

申请号：US15268173

申请日：2016-09-16

Applicant: Applied Materials, Inc.

Inventor： Roman GOUK ,  Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Jean DELMAS

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/02101 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/6719

Abstract: Embodiments described herein generally relate to a processing chamber having a reduced volume for performing supercritical drying processes or other phase transition processes. The chamber includes a substrate support moveably disposed on a first track and a door moveably disposed on a second track. The substrate support and door may be configured to move independently of one another and the chamber may be configured to minimize vertical movement of the substrate within the chamber.

公开(公告)号：US20160260896A1

公开(公告)日：2016-09-08

申请号：US15157120

申请日：2016-05-17

Applicant: Applied Materials, Inc.

Inventor： Roman GOUK ,  Steven VERHAVERBEKE ,  Alexander KONTOS ,  Adolph Miller ALLEN ,  Kevin MORAES

IPC: H01L43/12

CPC classification number: H01L43/12 ,  G11B5/746 ,  G11B5/855 ,  G11C11/16 ,  H01F41/34 ,  H01L21/2855 ,  H01L21/3081

Abstract: A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.