公开(公告)号：US08993058B2

公开(公告)日：2015-03-31

申请号：US14010639

申请日：2013-08-27

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Khaled Z. Ahmed

IPC: C23C16/40 ,  C23C8/12 ,  H01L21/02

CPC classification number: H01L21/0215 ,  C23C16/401 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/56 ,  H01L21/02225 ,  H01L21/0228 ,  H01L21/28255 ,  H01L21/28264

Abstract: Described are apparatus and methods for forming tantalum silicate layers on germanium or III-V materials. Such tantalum silicate layers may have Si/(Ta+Si) atomic ratios from about 0.01 to about 0.15. The tantalum silicate layers may be formed by atomic layer deposition of silicon oxide and tantalum oxide, followed by interdiffusion of the silicon oxide and tantalum oxide layers.

Abstract translation: 描述了在锗或III-V材料上形成硅酸钽层的装置和方法。 这种硅酸钽层可具有约0.01至约0.15的Si /（Ta + Si）原子比。 硅酸铝层可以通过氧化硅和氧化钽的原子层沉积形成，随后氧化硅和氧化钽层的相互扩散。

公开(公告)号：US20250046602A1

公开(公告)日：2025-02-06

申请号：US18229884

申请日：2023-08-03

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark J. Saly ,  Lakmal Charidu Kalutarage ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Akhil Singhal

IPC: H01L21/02 ,  C23C14/00 ,  C23C14/04 ,  C23C14/06 ,  C23C14/10 ,  C23C14/34 ,  C23C14/58

Abstract: A method includes obtaining a base structure of an electronic device, the base structure including at least one opening, and forming, using a reactive-ion deposition process, a dielectric material within the at least one opening.

公开(公告)号：US20250006485A1

公开(公告)日：2025-01-02

申请号：US18216286

申请日：2023-06-29

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Feng Q. Liu ,  Bhaskar Jyoti Bhuyan ,  Jeffrey W. Anthis ,  David Thompson

IPC: H01L21/02 ,  H01L21/311

Abstract: Embodiments of the disclosure relate to methods of selectively depositing polysilicon after forming a flowable polymer film to protect a substrate surface within a feature. A first silicon (Si) layer is deposited by physical vapor deposition (PVD). The flowable polymer film is formed on the first silicon (Si) layer on the bottom. A portion of the first silicon (Si) layer is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed. In some embodiments, a second silicon (Si) layer is selectively deposited on the first silicon (Si) layer to fill the feature. In some embodiments, the remaining portion of the first silicon (Si) layer on the bottom is oxidized to form a first silicon oxide (SiOx) layer on the bottom, and a silicon (Si) layer or a second silicon oxide (SiOx) layer is deposited on the first silicon oxide (SiOx) layer.

公开(公告)号：US12018363B2

公开(公告)日：2024-06-25

申请号：US16577220

申请日：2019-09-20

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Lakmal C. Kalutarage ,  Jeffrey W. Anthis ,  Tatsuya E. Sato

IPC: C23C16/30 ,  C23C16/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/56 ,  C23F1/44 ,  H01L21/02 ,  H01L21/762 ,  H01L21/768

CPC classification number: C23C16/303 ,  C23C16/32 ,  C23C16/56 ,  C23F1/44 ,  H01L21/02274 ,  H01L21/76224 ,  H01L21/76837 ,  C23C16/45536 ,  C23C16/50

Abstract: Methods for depositing film comprise depositing an aluminum-containing gap-fill film in a bottom-up manner in a feature of a substrate surface. The substrate can be sequentially exposed to an aluminum-containing precursor, a reactant, a fluorinating agent, and an etchant any number of times to promote bottom-up growth of the film in the feature.

公开(公告)号：US20230227968A1

公开(公告)日：2023-07-20

申请号：US18190246

申请日：2023-03-27

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/42 ,  C23C16/513 ,  C23C16/455 ,  C23C16/52 ,  C23C16/507 ,  C23C16/14

CPC classification number: C23C16/42 ,  C23C16/513 ,  C23C16/45536 ,  C23C16/52 ,  C23C16/507 ,  C23C16/45542 ,  C23C16/14

Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

公开(公告)号：US10906925B2

公开(公告)日：2021-02-02

申请号：US16747220

申请日：2020-01-20

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

IPC: C07F15/00 ,  C23C16/34 ,  C23C16/50 ,  C23C16/455 ,  C23C16/40 ,  C23C16/18

Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R′ is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US10790188B2

公开(公告)日：2020-09-29

申请号：US16159115

申请日：2018-10-12

Applicant: Applied Materials, Inc.

Inventor： Nasrin Kazem ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/06 ,  H01L21/768 ,  C23C16/04 ,  C23C16/56 ,  H01L21/285

Abstract: Methods for filling a substrate feature with a seamless ruthenium gap fill are described. The methods include depositing a ruthenium film, oxidizing the ruthenium film to form an oxidized ruthenium film, reducing the oxidized ruthenium film to a reduced ruthenium film and repeating the oxidation and reduction processes to form a seamless ruthenium gap fill.

公开(公告)号：US10699897B2

公开(公告)日：2020-06-30

申请号：US15413956

申请日：2017-01-24

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Jeffrey W. Anthis ,  Feng Q. Liu ,  David Thompson

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  C23C16/40 ,  C23C16/32 ,  C23C16/34 ,  C23C16/36

Abstract: Provided are acetylide-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a acetylide-based precursor and a reactant in various combinations.

公开(公告)号：US20200095674A1

公开(公告)日：2020-03-26

申请号：US16577220

申请日：2019-09-20

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Lakmal C. Kalutarage ,  Jeffrey W. Anthis ,  Tatsuya E. Sato

IPC: C23C16/30 ,  H01L21/762 ,  H01L21/768 ,  H01L21/02 ,  C23C16/32 ,  C23C16/56 ,  C23F1/44

Abstract: Methods for depositing film comprise depositing an aluminum-containing gap-fill film in a bottom-up manner in a feature of a substrate surface. The substrate can be sequentially exposed to an aluminum-containing precursor, a reactant, a fluorinating agent, and an etchant any number of times to promote bottom-up growth of the film in the feature.

公开(公告)号：US10483116B2

公开(公告)日：2019-11-19

申请号：US16180817

申请日：2018-11-05

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  David Knapp ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang

IPC: H01L21/285 ,  C23C16/08 ,  C23C16/455 ,  C23C16/06 ,  H01L29/786

Abstract: Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.