公开(公告)号：US12211694B2

公开(公告)日：2025-01-28

申请号：US18206514

申请日：2023-06-06

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Ziqing Duan ,  Karthik Thimmavajjula Narasimha ,  Kwangduk Douglas Lee ,  Bok Hoen Kim

IPC: H01L21/033 ,  C23C16/32 ,  C23C16/505 ,  H01L21/02 ,  H01L21/3065

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

公开(公告)号：US11488856B2

公开(公告)日：2022-11-01

申请号：US17069195

申请日：2020-10-13

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Ludovic Godet ,  Rui Cheng ,  Erica Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/762 ,  H01L21/768 ,  H01L21/02 ,  H01L23/31 ,  H01L29/06

Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).

公开(公告)号：US20210028055A1

公开(公告)日：2021-01-28

申请号：US17069195

申请日：2020-10-13

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Ludovic Godet ,  Rui Cheng ,  Erica Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/768 ,  H01L23/31 ,  H01L29/06

Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).

公开(公告)号：US10886172B2

公开(公告)日：2021-01-05

申请号：US16848754

申请日：2020-04-14

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Kelvin Chan

IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/02 ,  H01L27/11582 ,  H01L27/11556 ,  H01L21/285 ,  H01L23/532 ,  H01L21/311 ,  H01L23/528

Abstract: Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.

公开(公告)号：US20190385849A1

公开(公告)日：2019-12-19

申请号：US16522226

申请日：2019-07-25

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan ,  Yihong Chen ,  Kelvin Chan ,  Srinivas Gandikota

IPC: H01L21/033 ,  C23F1/00 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/321

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US20190333810A1

公开(公告)日：2019-10-31

申请号：US16505699

申请日：2019-07-08

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Kelvin Chan

IPC: H01L21/768 ,  H01L27/11582 ,  H01L27/11556 ,  H01L21/02 ,  H01L23/528 ,  H01L21/3213 ,  H01L21/285 ,  H01L23/532 ,  H01L21/311

Abstract: Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.

公开(公告)号：US20190252188A1

公开(公告)日：2019-08-15

申请号：US16393375

申请日：2019-04-24

Applicant: Applied Materials, Inc.

Inventor： Ziqing Duan ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/31053 ,  H01L21/31116 ,  H01L21/32105 ,  H01L21/768 ,  H01L21/76805 ,  H01L21/76883 ,  H01L21/76897

Abstract: Processing methods comprising selectively replacing a first pillar material with a second pillar material in a self-aligned process are described. The first pillar material may be grown orthogonally to the substrate surface and replaced with a second pillar material to leave a substantially similar shape and alignment as the first pillar material.

公开(公告)号：US10319591B2

公开(公告)日：2019-06-11

申请号：US15805753

申请日：2017-11-07

Applicant: Applied Materials, Inc.

Inventor： Ziqing Duan ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/321 ,  H01L21/768

Abstract: Processing methods comprising selectively replacing a first pillar material with a second pillar material in a self-aligned process are described. The first pillar material may be grown orthogonally to the substrate surface and replaced with a second pillar material to leave a substantially similar shape and alignment as the first pillar material.

公开(公告)号：US20180358264A1

公开(公告)日：2018-12-13

申请号：US16006402

申请日：2018-06-12

Applicant: Applied Materials, Inc

Inventor： Yong Wu ,  Yihong Chen ,  Shishi Jiang ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285

Abstract: Methods for filling a substrate feature with a seamless tungsten fill are described. The methods include depositing a tungsten film, oxidizing the tungsten film to a tungsten oxide pillar, reducing the tungsten oxide film to a seamless tungsten gapfill and optionally depositing additional tungsten on the tungsten gapfill.

公开(公告)号：US20180358260A1

公开(公告)日：2018-12-13

申请号：US16003827

申请日：2018-06-08

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Praburam Gopalraja

IPC: H01L21/768 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/7682 ,  H01J37/32357 ,  H01J37/32715 ,  H01L21/31122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76871 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76888 ,  H01L21/76897 ,  H01L23/53266

Abstract: A first metallization layer comprises a set of first conductive lines that extend along a first direction on a first dielectric layer on a substrate. Pillars are formed on recessed first dielectric layers and a second dielectric layer covers the pillars. A dual damascene etch provides a contact hole through the second dielectric layer and an etch removes the pillars to form air gaps.