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41.发明申请公开(公告)号：US20180337262A9
公开(公告)日：2018-11-22
申请号：US15116980
申请日：2015-10-16
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiaolong LI , Zheng LIU , Xiaoyong LU , Dong LI , Chunping LONG
CPC classification number: H01L29/66757 , H01L21/2026 , H01L21/265 , H01L21/28 , H01L27/1281 , H01L27/1296 , H01L29/06 , H01L29/78696
Abstract: A manufacturing method for a polysilicon thin film is provided. The manufacturing method for a polysilicon thin film includes forming a polysilicon layer, treating a surface of the polysilicon layer so that the surface of the polysilicon layer is electronegative, and supplying polar gas into a process chamber so that polar molecules of the polar gas are adsorbed on the surface of the polysilicon layer which is electronegative so as to form the polysilicon thin film, a surface of which has a hole density higher than an electron density.
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公开(公告)号：US20180226476A1
公开(公告)日：2018-08-09
申请号：US15325597
申请日：2015-10-30
Inventor： Zhichao ZHANG , Tsung Chieh KUO , Zheng LIU , Xiaoxiang ZHANG , Xi CHEN , Mingxuan LIU
IPC: H01L29/417 , H01L29/786 , H01L27/12
CPC classification number: H01L29/41733 , G02F1/136204 , G02F2001/134372 , H01L27/0288 , H01L27/1203 , H01L27/124 , H01L29/78606 , H01L29/78696
Abstract: An array panel and a manufacturing method thereof, a display panel and a display device are provided. The manufacturing method includes: forming first conducting patterns, second conducting patterns and metal connection lines on a base substrate, the metal connection lines being connected to the first conducting patterns and the second conducting patterns; and etching the metal connection lines so as to isolate the first conducting patterns from the second conducting patterns.
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公开(公告)号：US20170269467A1
公开(公告)日：2017-09-21
申请号：US15326566
申请日：2016-07-08
Inventor： Zhichao ZHANG , Tsung Chieh KUO , Zheng LIU , Shoukun WANG
IPC: G03F1/22 , G02F1/1343 , G03F1/38 , G03F1/76 , G03F7/038 , G03F7/16 , G03F7/20 , G03F7/26 , G03F7/095 , G02B5/20 , G03F7/039
CPC classification number: G03F1/22 , G02B5/201 , G02B5/208 , G02F1/13439 , G02F2001/13625 , G03F1/38 , G03F1/50 , G03F1/54 , G03F1/58 , G03F1/76 , G03F7/0007 , G03F7/0035 , G03F7/038 , G03F7/039 , G03F7/095 , G03F7/16 , G03F7/2004 , G03F7/2022 , G03F7/26 , G03F7/70283 , G03F7/70466 , G03F7/70575
Abstract: A mask, a manufacturing method thereof, and a patterning method employing the mask. In the mask, a plurality of masks can be combined into one mask. The pattern area (01) of the mask is provided with a first pattern section (10) and a second pattern section (20) which are not overlapped with each other; light of a first wavelength can run through the first pattern section (10) but light of a second wavelength cannot run through the first pattern section; the light of the second wavelength can run thorough the second pattern section (20) but the light of the first wavelength cannot run through the second pattern section; and the light of the first wavelength and the light of the second wavelength can run through the non-pattern area, or any of the light of the first wavelength and the light of the second wavelength cannot run through the non-pattern area. The mask is obtained by combining a plurality of masks.
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公开(公告)号：US20170236705A1
公开(公告)日：2017-08-17
申请号：US15518642
申请日：2016-01-22
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Dong LI , Xiaoyong LU , Xiaolong LI , Zheng LIU , Shuai ZHANG , Yucheng CHAN , Chienhung LIU , Chunping LONG
IPC: H01L21/02 , H01L29/786 , H01L27/12 , H01L29/66
CPC classification number: H01L21/0268 , H01L21/02488 , H01L21/02532 , H01L21/02592 , H01L27/1222 , H01L27/1285 , H01L27/1288 , H01L29/04 , H01L29/66757 , H01L29/78675 , H01L29/78696
Abstract: The present application provides a low temperature poly-silicon thin film, a low temperature poly-silicon thin film transistor and manufacturing methods thereof, and a display device. The manufacturing method of a low temperature poly-silicon thin film comprises steps of: forming an amorphous silicon thin film on a base; and performing a laser annealing process on the amorphous silicon thin film by using a mask plate to form a low temperature poly-silicon thin film, wherein the mask plate includes a transmissive region and a shielding region surrounding the transmissive region, and two sides of the shielding region adjacent to the transmissive region are in concave-convex shapes. Performance of the low temperature poly-silicon thin film formed by the manufacturing method of a low temperature poly-silicon thin film in the present application is enhanced.
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45.发明申请Smoothing Device, Smoothing Method, Thin Film Transistor, Display Substrate and Display Device 审中-公开平滑装置，平滑方法，薄膜晶体管，显示基板和显示装置公开(公告)号：US20160365360A1
公开(公告)日：2016-12-15
申请号：US15095649
申请日：2016-04-11
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiaolong LI , Huijuan ZHANG , Xiaoyong LU , Zheng LIU , Yucheng CHAN , Chunping LONG
IPC: H01L27/12 , H01J37/32 , H01L21/67 , H01L29/786 , H01L21/3065
Abstract: The present disclosure discloses a smoothing device, a smoothing method, a thin film transistor, a display substrate and a display device. The smoothing device comprises a cavity, a plasma generating component, a magnetic field generating component, an electric field generating component and a carrier located within the cavity. The plasmas generated by the plasma generating component are subjected to the Lorentz force parallel to the surface of the object to be smoothed under the effect of the magnetic field generated by the magnetic field generating component, and subjected to an electric field force in the direction perpendicular to the surface of the object to be smoothed and pointing to the object to be smoothed under the effect of the electric field generated by the electric field generating component.
Abstract translation: 本公开公开了一种平滑装置，平滑方法，薄膜晶体管，显示基板和显示装置。 平滑装置包括空腔，等离子体产生部件，磁场产生部件，电场产生部件和位于腔内的载体。 由等离子体产生部件产生的等离子体在由磁场产生部件产生的磁场的作用下经受平行于被平衡物体的表面的洛伦兹力，并且在垂直方向上受到电场力 到要平滑的物体的表面，并且在由电场产生部件产生的电场的作用下指向待平滑的物体。
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Patent Agency Ranking
公开(公告)号：US20160307930A1
公开(公告)日：2016-10-20
申请号：US14913123
申请日：2015-08-20
Inventor： Zheng LIU , Jinchao BAI , Zhichao ZHANG , Xiaoxiang ZHANG , Mingxuan LIU , Tsung Chieh KUO
IPC: H01L27/12 , H01L29/66 , H01L21/3065 , H01L29/786 , H01L21/027 , H01L21/3213
CPC classification number: H01L27/1222 , G02F2001/134372 , H01L21/0274 , H01L21/3065 , H01L21/32139 , H01L27/124 , H01L27/1288 , H01L29/66765 , H01L29/78678
Abstract: The present invention provides an array substrate which is divided into a plurality of pixel units each having a first transparent electrode and a thin film transistor provided therein, the thin film transistor comprising a drain, and the drain of the thin film transistor being arranged on the first transparent electrode and electrically connected to the first transparent electrode. The present invention further provides a manufacturing method of an array substrate and a display device. Compared with the prior art, in the present invention, as the first transparent electrode is arranged below the drain, the height of a step formed on the first transparent electrode is small so that no fracture will occur on the first transparent electrode during the formation of the first transparent electrode.
Abstract translation: 本发明提供一种阵列基板，其被分成多个像素单元，每个像素单元各自具有设置在其中的第一透明电极和薄膜晶体管，薄膜晶体管包括漏极，薄膜晶体管的漏极被布置在 第一透明电极并与第一透明电极电连接。 本发明还提供一种阵列基板和显示装置的制造方法。 与现有技术相比，在本发明中，由于第一透明电极布置在漏极下方，所以形成在第一透明电极上的台阶的高度小，使得在形成第一透明电极时在第一透明电极上不会发生断裂 第一透明电极。
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47.发明申请POLYSILICON THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE, DISPLAY PANEL 审中-公开多晶硅薄膜晶体管及其制造方法，阵列基板，显示面板公开(公告)号：US20160300858A1
公开(公告)日：2016-10-13
申请号：US15083646
申请日：2016-03-29
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiaoyong LU , Dong LI , Zheng LIU , Shuai ZHANG , Liang SUN , Chunping LONG
IPC: H01L27/12 , H01L29/786 , H01L29/66
CPC classification number: H01L29/78696 , H01L21/26586 , H01L29/66492 , H01L29/66537 , H01L29/66757 , H01L29/78621 , H01L29/78675
Abstract: The embodiments of the present disclosure provide a polysilicon thin film transistor and manufacturing method thereof, an array substrate, and a display panel. The method for manufacturing a polysilicon thin film transistor comprises: forming, on a substrate, a gate, a source and a drain, and an active layer. Forming the active layer comprises: forming a polysilicon layer on the substrate, which comprises a channel region and extension regions; performing ion injection process in the extension regions to form lightly-doped regions close to the channel region and a source region and a drain region; prior to or following the formation of the lightly-doped regions, employing halo ion injection process to form halo regions at the positions of the channel region which are close to the lightly-doped regions.
Abstract translation: 本公开的实施例提供一种多晶硅薄膜晶体管及其制造方法，阵列基板和显示面板。 制造多晶硅薄膜晶体管的方法包括：在衬底上形成栅极，源极和漏极以及有源层。 形成有源层包括：在衬底上形成多晶硅层，其包括沟道区域和延伸区域; 在所述延伸区域中进行离子注入处理，以形成靠近所述沟道区域和源极区域和漏极区域的轻掺杂区域; 在形成轻掺杂区之前或之后，采用光晕离子注入工艺在靠近轻掺杂区的沟道区的位置形成卤素区。
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48.发明申请METHOD OF REMOVING PHOTORESIST, EXPOSURE APPARATUS AND METHOD OF MANUFACTURING DISPLAY SUBSTRATE 审中-公开去除光电元件的方法，曝光装置和制造显示基板的方法公开(公告)号：US20150346603A1
公开(公告)日：2015-12-03
申请号：US14421570
申请日：2014-06-26
Inventor： Zhichao ZHANG , Zongjie GUO , Zheng LIU
IPC: G03F7/42 , G03F7/32 , G03F7/20 , H01L27/12 , H01L21/308
CPC classification number: G03F7/42 , G03F7/20 , G03F7/2004 , G03F7/32 , G03F7/427 , G03F7/70058 , H01L21/3083 , H01L27/1288
Abstract: A method of removing a photoresist, an exposure apparatus and a method of manufacturing a display substrate are disclosed. The method of removing a photoresist includes the following steps: exposing the photoresist (43) remaining on the substrate (41) after the substrate is subjected to a patterning process; and removing the exposed photoresist (45) by a developing process. In this way, the necessities for the stripping apparatus used in stripping process, the high power apparatus and the chemical gas both used in the ashing process can be eliminated, thereby reducing the equipment cost and production cost.
Abstract translation: 公开了去除光致抗蚀剂的方法，曝光装置和制造显示基板的方法。 去除光致抗蚀剂的方法包括以下步骤：在对基板进行图案化处理之后，使残留在基板（41）上的光致抗蚀剂（43）暴露; 以及通过显影过程去除曝光的光致抗蚀剂（45）。 这样，可以消除在灰化处理中使用的剥离装置中使用的剥离装置，大功率装置和化学气体的必需品，从而降低了设备成本和生产成本。
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公开(公告)号：US20230075199A1
公开(公告)日：2023-03-09
申请号：US17800902
申请日：2021-10-13
Applicant: BOE Technology Group Co., Ltd.
Abstract: A display substrate and a manufacturing method therefor, and a display device. The display substrate comprises a plurality of island areas that are spaced apart from each other, a plurality of hole areas, and bridge areas for connecting adjacent island areas. The island areas or/and the bridge areas comprise an edge area adjacent to the hole area; the edge area comprises a composite structure layer provided on a base substrate; a stepped structure is formed at a side surface of the composite structure layer facing the hole areas; the edge area further comprises an inorganic encapsulation layer disposed on the composite structure layer and the stepped structure.
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公开(公告)号：US20220254865A1
公开(公告)日：2022-08-11
申请号：US17624724
申请日：2021-04-06
Applicant: BOE Technology Group Co., Ltd.
Inventor： Caiyu QU , Huijuan ZHANG , Zunqing SONG , Dengyun CHEN , Yibing FAN , Liangjian LI , Zheng LIU
Abstract: The present disclosure provides a display substrate, a manufacturing method thereof and a display device, and relates to the field of display technology. The display substrate includes a base substrate, and a driving circuitry layer and a light-emitting unit arranged on the base substrate. The driving circuitry layer includes a first gate metal layer, and a pattern of the first gate metal layer includes a gate line. The first gate metal layer includes a first conductive layer with resistivity less than a first threshold and a Young's modulus less than a second threshold, and a first conductive protection layer arranged at a side of the first conductive layer away from the base substrate.
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