THIN FILM TRANSISTOR AND DISPLAY SUBSTRATE, FABRICATION METHOD THEREOF, AND DISPLAY DEVICE

    公开(公告)号:US20190067340A1

    公开(公告)日:2019-02-28

    申请号:US15768634

    申请日:2017-10-30

    Abstract: A method for fabricating a thin film transistor includes providing a substrate (100); forming a semiconductor layer (105) over the substrate (100); forming a source-drain metal layer (106) over the semiconductor layer (105); applying one patterning process to the semiconductor layer (105) and the source-drain metal layer (106) to form an active layer (1), a source electrode (2), and a drain electrode (3); forming a gate insulating layer (101) and an interlayer insulating layer (102) that cover the active layer (1), the source electrode (2), and the drain electrode (3); applying a patterning process to the interlayer insulating layer (102) to form a first window (10) in the interlayer insulating layer (102) to expose a portion of the gate insulating layer (101); and forming a gate electrode (4) in the first window (10). An orthogonal projection of the gate electrode (4) on the substrate (100) is in an orthogonal projection of the active layer (1) on the substrate (100).

    X-ray flat-panel detector and method for preparing the same, and white insulating material

    公开(公告)号:US10115765B2

    公开(公告)日:2018-10-30

    申请号:US14909712

    申请日:2015-08-10

    Abstract: The present disclosure discloses an X-ray flat-panel detector and a method for preparing the same, and a white insulating material. The X-ray flat-panel detector includes: a thin-film transistor substrate; an insulating reflection layer, which is provided on the thin-film transistor substrate and has a reflection function, wherein the insulating reflection layer is provided with a contact hole through which a source electrode of the thin-film transistor substrate is exposed; a pixel electrode, which is provided on the insulating reflection layer, wherein the pixel electrode is electrically connected to the source electrode of the thin-film transistor substrate via the contact hole; a photodiode, which covers the pixel electrode; an electrode, which is provided on the photodiode; and an X-ray conversion layer, which is provided on the electrode.

    X-ray flat panel detector and X-ray digital radiography system

    公开(公告)号:US09735194B2

    公开(公告)日:2017-08-15

    申请号:US15088177

    申请日:2016-04-01

    CPC classification number: H01L27/14663 G01T1/2018 G01T1/241 H01L27/14612

    Abstract: The present disclosure provides an X-ray flat panel detector including: a base substrate; thin film transistors (TFTs), a pixel electrode layer, photodiodes, a transparent electrode layer, and an X-ray conversion layer which are arranged on the base substrate; and an electric field application portion configured to generate an electric field, wherein the photodiodes are arranged in the electric field, and a moving direction of negative charges when visible light rays are converted to electrical signals by the photodiodes is substantially same as a direction of the electric field. In this detector, it is applied a direction of the electric field which is substantially same as the moving direction of negative charges in the photodiode, so that movement of holes and electrons of the photodiode may be accelerated under an influence of the electric field, and thus the electrical signal may promptly arrive at the pixel electrode. As a result, it is improved the quantum detection efficiency and the sensitivity of the X-ray flat panel detector.

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