-
公开(公告)号：US07476849B2
公开(公告)日：2009-01-13
申请号：US11371907
申请日：2006-03-10
CPC分类号： H01J49/40 , H01J37/32935
摘要： An in-situ ion sensor is disclosed for monitoring ion species in a plasma chamber. The ion sensor may comprise: a drift tube; an extractor electrode and a plurality of electrostatic lenses disposed at a first end of the drift tube, wherein the extractor electrode is biased to attract ions from a plasma in the plasma chamber, and wherein the plurality of electrostatic lenses cause at least one portion of the attracted ions to enter the drift tube and drift towards a second end of the drift tube within a limited divergence angle; an ion detector disposed at the second end of the drift tube, wherein the ion detector detects arrival times associated with the at least one portion of the attracted ions; and a housing for the extractor, the plurality of electrostatic lenses, the drift tube, and the ion detector, wherein the housing accommodates differential pumping between the ion sensor and the plasma chamber.
摘要翻译： 公开了用于监测等离子体室中的离子种类的原位离子传感器。 离子传感器可以包括：漂移管; 提取器电极和设置在漂移管的第一端处的多个静电透镜，其中所述提取器电极被偏置以从所述等离子体室中的等离子体吸引离子，并且其中所述多个静电透镜引起所述静电透镜的至少一部分 吸引离子进入漂移管并在有限的发散角内漂移到漂移管的第二端; 设置在所述漂移管的第二端处的离子检测器，其中所述离子检测器检测与所述吸引离子的所述至少一部分相关联的到达时间; 以及用于提取器，多个静电透镜，漂移管和离子检测器的壳体，其中壳体容纳离子传感器和等离子体室之间的差分泵浦。
-
42.发明授权公开(公告)号：US07132672B2
公开(公告)日：2006-11-07
申请号：US10817755
申请日：2004-04-02
申请人： Steven R. Walther , Rajesh Dorai , Harold Persing , Jay Scheuer , Bon-Woong Koo , Bjorn O. Pedersen , Chris Leavitt , Timothy Miller
发明人： Steven R. Walther , Rajesh Dorai , Harold Persing , Jay Scheuer , Bon-Woong Koo , Bjorn O. Pedersen , Chris Leavitt , Timothy Miller
IPC分类号： H01J37/244
CPC分类号： H01J37/32963 , H01J37/32935 , H01J37/3299 , H01J2237/24405
摘要： A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.
摘要翻译： 法拉第剂量和均匀性监测器可以包括围绕目标晶片的磁抑制环形法拉第杯。 狭窄的孔径可以减少法拉第杯开口内的排放。 环形法拉第杯可以具有连续的横截面，以消除由于断裂引起的排放。 多个不同半径的环形法拉第杯可以独立地测量电流密度以监测等离子体均匀性的变化。 磁场抑制场可以被配置为具有随着距离的场强非常快速的降低，以使等离子体和植入物扰动最小化，并且可以包括径向和方位角分量，或者主要包括方位角分量。 方位角分量可以由交替极性的多个垂直取向的磁体或通过使用磁场线圈来产生。 此外，剂量电子学可以提供高电压脉冲电流的集成，并且可以将积分电荷转换成光耦合到剂量控制器的一系列光脉冲。
-
43.发明授权Wafer platen equipped with electrostatic clamp, wafer backside gas cooling, and high voltage operation capability for plasma doping 有权装有静电夹具，晶圆背面气体冷却和等离子体掺杂的高压操作能力的晶片压板公开(公告)号：US07126808B2
公开(公告)日：2006-10-24
申请号：US10816289
申请日：2004-04-01
IPC分类号： H02H1/00
CPC分类号： H01L21/67109 , H01L21/67069 , H01L21/6831 , Y10T279/23
摘要： An apparatus is provided for handling workpieces, such as semiconductor wafers, during semiconductor processing. The apparatus includes a wafer platen having a plurality of channels each extending from a top surface to a bottom surface of the wafer platen, a plurality of lift pins in alignment with the channels, and a mechanism for engaging the lift pins in a loading position of the workpiece, a clamping position of the workpiece so that desired semiconductor processes may be performed to the workpiece, and a lift off position for removing the workpiece from the wafer platen after the semiconductor processes are completed. The mechanism places the lift pins below the surface of the wafer platen in the load position and then raises the lift pins to a first predetermined distance above the surface of the wafer platen in the clamp position such that the first predetermined distance allows the workpiece to be clamped to the wafer platen. Then, the mechanism places the lift pins at a second predetermined distance above the surface of the wafer platen in the lift off position such that a workpiece removing device, such as a robotic arm, may be positioned between the workpiece and the wafer platen without contacting either surface.
摘要翻译： 在半导体处理期间提供一种用于处理诸如半导体晶片的工件的装置。 该装置包括具有多个通道的晶片压板，每个通道从晶片压板的顶表面延伸到底表面，多个提升销与通道对准，以及用于将升降销接合在装载位置 工件，工件的夹紧位置，从而可以对工件执行所需的半导体工艺，以及用于在半导体工艺完成之后从晶片压板移除工件的剥离位置。 该机构将升降销放置在晶片压板的表面下方处于装载位置，然后将提升销提升到夹具位置上的晶片压板表面之上的第一预定距离，使得第一预定距离允许工件为 夹在晶圆台板上。 然后，该机构将提升销放置在提升离开位置上方的晶片台板表面上方第二预定距离处，使得诸如机器臂的工件移除装置可以位于工件和晶片压板之间而不接触 任一表面。
-
44.发明申请公开(公告)号：US20050223991A1
公开(公告)日：2005-10-13
申请号：US10817755
申请日：2004-04-02
申请人： Steven Walther , Rajesh Dorai , Harold Persing , Jay Scheuer , Bon-Woong Koo , Bjorn Pedersen , Chris Leavitt , Timothy Miller
发明人： Steven Walther , Rajesh Dorai , Harold Persing , Jay Scheuer , Bon-Woong Koo , Bjorn Pedersen , Chris Leavitt , Timothy Miller
IPC分类号： H01J37/244 , H01J37/32 , C23C14/48
CPC分类号： H01J37/32963 , H01J37/32935 , H01J37/3299 , H01J2237/24405
摘要： A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.
摘要翻译： 法拉第剂量和均匀性监测器可以包括围绕目标晶片的磁抑制环形法拉第杯。 狭窄的孔径可以减少法拉第杯开口内的排放。 环形法拉第杯可以具有连续的横截面，以消除由于断裂引起的排放。 多个不同半径的环形法拉第杯可以独立地测量电流密度以监测等离子体均匀性的变化。 磁场抑制场可以被配置为具有随着距离的场强非常快速的降低，以使等离子体和植入物扰动最小化，并且可以包括径向和方位角分量，或者主要包括方位角分量。 方位角分量可以由交替极性的多个垂直取向的磁体或通过使用磁场线圈来产生。 此外，剂量电子学可以提供高电压脉冲电流的集成，并且可以将积分电荷转换成光耦合到剂量控制器的一系列光脉冲。
-
45.发明授权Method and system for in-situ monitoring of cathode erosion and predicting cathode lifetime 有权阴极侵蚀现场监测方法及系统，预测阴极寿命公开(公告)号：US08756021B2
公开(公告)日：2014-06-17
申请号：US12912312
申请日：2010-10-26
IPC分类号： G01B3/44
CPC分类号： H01J37/3171 , H01J37/08 , H01J37/242 , H01J2237/304
摘要： A method of controlling operation of an indirectly-heated cathode (IHC) ion source includes a step of measuring a rate of loss of cathode weight of the IHC ion source that occurs during operation using a first cathode configuration and under a first set of operation conditions. A maximum weight loss for the first cathode configuration is determined, and a cathode lifetime is calculated based upon the rate of cathode weight loss and the maximum weight loss. A further method includes receiving a minimum source bias power value for operation of a cathode in a first configuration, measuring a rate of decrease in source bias power for a cathode in the first configuration, and calculating a lifetime of the cathode based upon the minimum source bias power and rate of decrease in source bias power.
摘要翻译： 控制间接加热的阴极（IHC）离子源的操作的方法包括以下步骤：测量在使用第一阴极配置的操作期间和在第一组操作条件下发生的IHC离子源的阴极重量损失率 。 确定第一阴极构造的最大重量损失，并且基于阴极重量损失率和最大重量损失计算阴极寿命。 另一种方法包括：在第一配置中接收用于阴极操作的最小源偏置功率值，测量第一配置中阴极的源极偏置功率的降低率，以及基于最小源计算阴极的寿命 偏置功率和源偏置功率的降低率。
-
公开(公告)号：US20130287963A1
公开(公告)日：2013-10-31
申请号：US13457455
申请日：2012-04-26
IPC分类号： C23C14/48
CPC分类号： C23C14/48 , H01J37/32357 , H01J37/32412
摘要： An ion implantation apparatus including a first plasma chamber, a second plasma chamber and an extraction electrode disposed therebetween. The first and second plasma chambers configured to house respective plasmas in response to the introduction of a different feed gases therein. The extraction electrode is electrically isolated from the plasma chamber. An extraction voltage is applied to the first plasma chamber above a bias potential used to generate the plasma therein. The extraction voltage drives the plasma potential to accelerate the ions in the first plasma to a desired implant energy. The accelerated ions pass through an aperture in the extraction electrode and are directed toward a substrate housed within the second plasma chamber for implantation.
摘要翻译： 一种离子注入装置，包括第一等离子体室，第二等离子体室和设置在其间的提取电极。 第一和第二等离子体室被配置为响应于其中引入不同的进料气体来容纳各个等离子体。 提取电极与等离子体室电隔离。 提供电压施加到第一等离子体室以上用于在其中产生等离子体的偏置电位。 提取电压驱动等离子体电位以将第一等离子体中的离子加速到期望的注入能量。 加速离子通过引出电极中的孔，并且被引向容纳在第二等离子体室内用于注入的衬底。
-
公开(公告)号：US20130001440A1
公开(公告)日：2013-01-03
申请号：US13175494
申请日：2011-07-01
IPC分类号： G21K5/08
CPC分类号： H01J37/32412
摘要： A system for implanting a substrate. The system includes a substrate holder disposed within a process chamber of the system and coupled to ground. The system also includes an electrode disposed within the process chamber and coupled to a power source, the power source configured to supply voltage to the electrode as an unbalanced voltage pulse train, wherein a negative peak voltage during a negative voltage pulse period of the unbalanced voltage pulse train is higher than a positive peak voltage during a positive voltage pulse period of the unbalanced pulse train. The system further includes a movable mask, wherein the movable mask is configured to move between a first position proximate the substrate holder, and a second position proximate the driven electrode.
摘要翻译： 一种用于植入衬底的系统。 该系统包括设置在系统的处理室内并耦合到地面的衬底保持器。 该系统还包括设置在处理室内并耦合到电源的电极，电源被配置为向电极提供电压作为不平衡电压脉冲串，其中在不平衡电压的负电压脉冲周期期间的负峰值电压 在不平衡脉冲串的正电压脉冲期间，脉冲串高于正峰值电压。 该系统还包括可移动掩模，其中可移动掩模构造成在靠近基板保持器的第一位置与靠近驱动电极的第二位置之间移动。
-
公开(公告)号：US20120003760A1
公开(公告)日：2012-01-05
申请号：US13160573
申请日：2011-06-15
申请人： Piotr Lubicki , Bon-Woong Koo
发明人： Piotr Lubicki , Bon-Woong Koo
CPC分类号： H01J37/241 , H01J37/243 , H01J37/248 , H01J37/3171 , H01J37/32412 , H01J37/32935 , H01J2237/0206 , H01J2237/24535
摘要： An ion implantation system and method are disclosed in which glitches in voltage are minimized by modifications to the power system of the implanter. These power supply modifications include faster response time, output filtering, improved glitch detection and removal of voltage blanking. By minimizing glitches, it is possible to produce solar cells with acceptable dose uniformity without having to pause the scan each time a voltage glitch is detected. For example, by shortening the duration of a voltage to about 20-40 milliseconds, dose uniformity within about 3% can be maintained.
摘要翻译： 公开了一种离子注入系统和方法，其中通过对注入机的电力系统的修改来最小化电压中的毛刺。 这些电源修改包括更快的响应时间，输出滤波，改进的毛刺检测和消除电压消隐。 通过最小化毛刺，可以在每次检测到电压毛刺时不必暂停扫描，生产具有可接受的剂量均匀性的太阳能电池。 例如，通过将电压的持续时间缩短到约20-40毫秒，可以保持约3％内的剂量均匀性。
-
公开(公告)号：US20120001087A1
公开(公告)日：2012-01-05
申请号：US13167399
申请日：2011-06-23
申请人： Svetlana Radovanov , Jason Schaller , Richard M. White , Kevin R. Verrier , James Blanchette , Bon-Woong Koo , Eric d. Hermanson , Kevin Daniels
发明人： Svetlana Radovanov , Jason Schaller , Richard M. White , Kevin R. Verrier , James Blanchette , Bon-Woong Koo , Eric d. Hermanson , Kevin Daniels
IPC分类号： H01J3/14
CPC分类号： H01J37/12 , H01J37/3171 , H01J2237/0213 , H01J2237/032 , H01J2237/0475
摘要： A system and method are disclosed for controlling an ion beam. A deceleration lens is disclosed for use in an ion implanter. The lens may include a suppression electrode, first and second focus electrodes, and first and second shields. The shields may be positioned between upper and lower portions of the suppression electrode. The first and second shields are positioned between the first focus electrode and an end station of the ion implanter. Thus positioned, the first and second shields protect support surfaces of said first and second focus electrodes from deposition of back-streaming particles generated from said ion beam. In some embodiments, the first and second focus electrodes may be adjustable to enable the electrode surfaces to be adjusted with respect to a direction of the ion beam. By adjusting the angle of the focus electrodes, parallelism of the ion beam can be controlled. Other embodiments are described and claimed.
摘要翻译： 公开了用于控制离子束的系统和方法。 公开了用于离子注入机的减速透镜。 透镜可以包括抑制电极，第一和第二聚焦电极以及第一和第二屏蔽。 屏蔽件可以位于抑制电极的上部和下部之间。 第一和第二屏蔽件位于离子注入机的第一聚焦电极和端电极之间。 如此定位，第一和第二屏蔽件保护所述第一和第二聚焦电极的支撑表面不会沉积从所述离子束产生的回流颗粒。 在一些实施例中，第一和第二聚焦电极可以是可调节的，以使电极表面相对于离子束的方向被调整。 通过调整聚焦电极的角度，可以控制离子束的平行度。 描述和要求保护其他实施例。
-
公开(公告)号：US20100084581A1
公开(公告)日：2010-04-08
申请号：US12244001
申请日：2008-10-02
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J37/1472 , H01J37/3007 , H01J2237/0041 , H01J2237/047 , H01J2237/24507 , H01J2237/24535 , H01J2237/30472 , H01J2237/30477 , H01J2237/31701 , H01J2237/31703
摘要： An apparatus and method for ion implantation that include destabilizing the ion beam as it passes through magnetic field, preferably a dipole magnetic field is disclosed. By introducing a bias voltage at certain points within the magnetic field, electrons from the plasma are drawn toward the magnet, thereby causing the ion beam to expand due to space charge effects. The bias voltage can be introduced into the magnet in a region where the magnetic field has only one component. Alternatively, the bias voltage can be in a region wherein the magnetic field has two components.
摘要翻译： 公开了一种用于离子注入的装置和方法，其包括在离子束通过磁场时使其稳定化，优选偶极磁场。 通过在磁场内的某些点引入偏置电压，来自等离子体的电子被吸向磁体，从而由于空间电荷效应而导致离子束膨胀。 可以在磁场仅具有一个分量的区域中将偏置电压引入到磁体中。 或者，偏置电压可以在其中磁场具有两个分量的区域中。
-
-
-
-
-
-
-
-
-
搜索结果
52 条记录 (耗时 0.052 秒)