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253 条记录 (耗时 0.032 秒)

    Electrical Fuse With Metal Line Migration
    41.
    发明申请
    Electrical Fuse With Metal Line Migration 审中-公开
    具有金属线迁移的电气保险丝

    公开(公告)号：US20130071998A1

    公开(公告)日：2013-03-21

    申请号：US13234205

    申请日：2011-09-16

    申请人： Baozhen Li ,  Yan Zun Li ,  Keith Kwong Hon Wong ,  Chih-Chao Yang

    发明人： Baozhen Li ,  Yan Zun Li ,  Keith Kwong Hon Wong ,  Chih-Chao Yang

    IPC分类号： H01L21/326 ,  H01L21/28 ,  H01L23/52

    CPC分类号： H01L23/5256 ,  H01L21/326 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An electrical fuse device is disclosed. A circuit apparatus can include the fuse device, a first circuit element and a second circuit element. The fuse includes a first contact that has a first electromigration resistance, a second contact that has a second electromigration resistance and a metal line, which is coupled to the first contact and to the second contact, that has a third electromigration resistance that is lower than the second electromigration resistance. The first circuit element is coupled to the first contact and the second circuit element coupled to the second contact. The fuse is configured to conduct a programming current from the first contact to the second contact through the metal line. Further, the programming current causes the metal line to electromigrate away from the second contact to electrically isolate the second circuit element from the first circuit element.

    摘要翻译： 公开了一种电熔丝装置。 电路装置可以包括熔丝装置，第一电路元件和第二电路元件。 熔丝包括具有第一电迁移电阻的第一触点，具有第二电迁移电阻的第二触点和耦合到第一触点和第二触点的金属线，其具有低于 第二次电迁移阻力。 第一电路元件耦合到第一触点，而第二电路元件耦合到第二触点。 保险丝被配置为通过金属线将编程电流从第一触点传导到第二触点。 此外，编程电流使金属线电离远离第二触点，以将第二电路元件与第一电路元件电隔离。

    Hybrid interconnect structure for performance improvement and reliability enhancement
    42.
    发明授权
    Hybrid interconnect structure for performance improvement and reliability enhancement 有权
    混合互连结构，用于性能改进和可靠性提升

    公开(公告)号：US07973409B2

    公开(公告)日：2011-07-05

    申请号：US11625576

    申请日：2007-01-22

    申请人： Chih-Chao Yang ,  Thomas M. Shaw ,  Keith Kwong Hon Wong ,  Haining S. Yang

    发明人： Chih-Chao Yang ,  Thomas M. Shaw ,  Keith Kwong Hon Wong ,  Haining S. Yang

    IPC分类号： H01L21/00

    CPC分类号： H01L21/76841 ,  H01L21/7682 ,  H01L21/76831 ,  H01L23/481 ,  H01L23/5222 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53271 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides an interconnect structure (of the single or dual damascene type) and a method of forming the same, in which a dense (i.e., non-porous) dielectric spacer is present on the sidewalls of a dielectric material. More specifically, the inventive structure includes a dielectric material having a conductive material embedded within at least one opening in the dielectric material, wherein the conductive material is laterally spaced apart from the dielectric material by a diffusion barrier, a dense dielectric spacer and, optionally, an air gap. The presence of the dense dielectric spacer results in a hybrid interconnect structure that has improved reliability and performance as compared with existing prior art interconnect structures which do not include such dense dielectric spacers. Moreover, the inventive hybrid interconnect structure provides for better process control which leads to the potential for high volume manufacturing.

    摘要翻译： 本发明提供了一种互连结构（单镶嵌型或双镶嵌型）及其形成方法，其中在电介质材料的侧壁上存在致密的（即非多孔的）电介质间隔物。 更具体地，本发明的结构包括介电材料，其具有嵌入介电材料中的至少一个开口中的导电材料，其中导电材料通过扩散阻挡层，致密电介质间隔物和任选地， 气隙。 与现有技术的不包括这种致密电介质间隔物的互连结构相比，密集电介质间隔物的存在导致混合互连结构具有改进的可靠性和性能。 此外，本发明的混合互连结构提供了更好的过程控制，这导致了大批量制造的潜力。

    Method of forming a micro-electromechanical (MEMS) switch
    48.
    发明授权
    Method of forming a micro-electromechanical (MEMS) switch 失效
    形成微机电（MEMS）开关的方法

    公开(公告)号：US07726010B2

    公开(公告)日：2010-06-01

    申请号：US11968896

    申请日：2008-01-03

    申请人： Louis C. Hsu ,  Lawrence A. Clevenger ,  Timothy J. Dalton ,  Carl J. Radens ,  Keith Kwong Hon Wong ,  Chih-Chao Yang

    发明人： Louis C. Hsu ,  Lawrence A. Clevenger ,  Timothy J. Dalton ,  Carl J. Radens ,  Keith Kwong Hon Wong ,  Chih-Chao Yang

    IPC分类号： H01H11/00 ,  H01H65/00

    CPC分类号： H01H50/005 ,  H01H2050/007 ,  Y10T29/4902 ,  Y10T29/49105 ,  Y10T29/49147

    摘要： A method of fabricating a MEMS switch having a free moving inductive element within in micro-cavity guided by at least one inductive coil. The switch consists of an upper inductive coil at one end of a micro-cavity; optionally, a lower inductive coil; and a free-moving inductive element preferably made of magnetic material. The coils are provided with an inner permalloy core. Switching is achieved by passing a current through the upper coil, inducing a magnetic field unto the inductive element. The magnetic field attracts the free-moving inductive element upwards, shorting two open conductive wires, closing the switch. When the current flow stops or is reversed, the free-moving magnetic element drops back by gravity to the bottom of the micro-cavity and the conductive wires open. When the chip is not mounted with the correct orientation, the lower coil pulls the free-moving inductive element back at its original position.

    摘要翻译： 一种制造具有由至少一个感应线圈引导的微腔内的自由运动的感应元件的MEMS开关的方法。 开关由微腔一端的上感应线圈组成; 可选地，下感应线圈; 以及优选由磁性材料制成的自由移动的电感元件。 线圈设有内坡道合金芯。 通过使电流通过上部线圈，从而产生电感元件的磁场来实现切换。 磁场向上吸引自由移动的感应元件，短路两根开放的导线，闭合开关。 当电流停止或反转时，自由移动的磁性元件通过重力返回到微腔的底部并且导线打开。 当芯片没有以正确的方向安装时，下线圈将自由移动的感应元件拉回其原始位置。