Abstract:
An article includes a carrier including a carrier bonding surface, a sheet including a sheet bonding surface, and a surface modification layer disposed on at least one of the carrier bonding surface and the sheet bonding surface. The surface modification layer includes a plasma polymerized material. The plasma polymerized material planarizes the at least one of the carrier bonding surface and the sheet bonding surface. The carrier bonding surface and the sheet bonding surface are bonded with the surface modification layer so that the carrier is temporarily bonded with the sheet. A method of making an article includes depositing a surface modification layer on at least one of a carrier bonding surface and a sheet bonding surface. The method further includes bonding the carrier bonding surface and the sheet bonding surface with the surface modification layer to temporarily bond the carrier with the sheet.
Abstract:
Embodiments are related to systems and methods for forming vias in a substrate, and more particularly to systems and methods for reducing substrate surface disruption during via formation.
Abstract:
A method of controllably bonding a thin sheet having a thin sheet bonding surface with a carrier having a carrier bonding surface, by depositing a carbonaceous surface modification layer onto at least one of the thin sheet bonding surface and the carrier bonding surface, incorporating polar groups with the surface modification layer, and then bonding the thin sheet bonding surface to the carrier bonding surface via the surface modification layer. The surface modification layer may include a bulk carbonaceous layer having a first polar group concentration and a surface layer having a second polar group concentration, wherein the second polar group concentration is higher than the first polar group concentration. The surface modification layer deposition and the treatment thereof may be performed by plasma polymerization techniques.
Abstract:
A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low Tg glass, a precursor of a low Tg glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200° C.
Abstract:
A catalyst-free CVD method for forming graphene. The method involves placing a substrate within a reaction chamber, heating the substrate to a temperature between 600° C. and 1100° C., and introducing a carbon precursor into the chamber to form a graphene layer on a surface of the substrate. The method does not use plasma or a metal catalyst to form the graphene.
Abstract:
One or more aspects of the disclosure pertain to an article including a film disposed on a glass substrate, which may be strengthened, where the interface between the film and the glass substrate is modified, such that the article has an improved average flexural strength, and the film retains key functional properties for its application. Some key functional properties of the film include optical, electrical and/or mechanical properties. In one or more embodiments, interface exhibits the effective adhesion energy is about less than about 4 J/m2. In some embodiments, the interface is modified by the inclusion of a crack mitigating layer between the glass substrate and the film.
Abstract translation:本公开的一个或多个方面涉及一种包括设置在玻璃基板上的膜的制品,其可以被加强,其中膜和玻璃基板之间的界面被改性,使得制品具有改善的平均弯曲强度,以及 该片保留了其应用的关键功能特性。 膜的一些关键功能特性包括光学,电学和/或机械性质。 在一个或多个实施方案中,界面表现出约小于约4J / m 2的有效粘附能。 在一些实施方案中,通过在玻璃基底和膜之间包含裂纹缓解层来修饰界面。
Abstract:
A method of controllably bonding a thin sheet having a thin sheet bonding surface with a carrier having a carrier bonding surface, by depositing a carbonaceous surface modification layer onto at least one of the thin sheet bonding surface and the carrier bonding surface, incorporating polar groups with the surface modification layer, and then bonding the thin sheet bonding surface to the carrier bonding surface via the surface modification layer. The surface modification layer may include a bulk carbonaceous layer having a first polar group concentration and a surface layer having a second polar group concentration, wherein the second polar group concentration is higher than the first polar group concentration. The surface modification layer deposition and the treatment thereof may be performed by plasma polymerization techniques.
Abstract:
One or more aspects of the disclosure pertain to an article including a film disposed on a glass substrate, which may be strengthened, where the interface between the film and the glass substrate is modified, such that the article has an improved average flexural strength, and the film retains key functional properties for its application. Some key functional properties of the film include optical, electrical and/or mechanical properties. In one or more embodiments, the interface exhibits an effective adhesion energy of about less than about 4 J/m2. In some embodiments, the interface is modified by the inclusion of a crack mitigating layer containing an inorganic material between the glass substrate and the film.
Abstract translation:本公开的一个或多个方面涉及一种包括设置在玻璃基板上的膜的制品,其可以被加强,其中膜和玻璃基板之间的界面被改性,使得制品具有改善的平均弯曲强度,以及 该片保留了其应用的关键功能特性。 膜的一些关键功能特性包括光学,电学和/或机械性质。 在一个或多个实施方案中,界面表现出约小于约4J / m 2的有效粘附能。 在一些实施方案中,通过在玻璃基底和膜之间包含含有无机材料的裂纹缓解层来修饰界面。
Abstract:
Surface modification layers and associated heat treatments, that may be provided on a sheet, a carrier, or both, to control both room-temperature van der Waals (and/or hydrogen) bonding and high temperature covalent bonding between the thin sheet and carrier. The room-temperature bonding is controlled so as to be sufficient to hold the thin sheet and carrier together during vacuum processing, wet processing, and/or ultrasonic cleaning processing, for example. And at the same time, the high temperature covalent bonding is controlled so as to prevent a permanent bond between the thin sheet and carrier during high temperature processing, as well as maintain a sufficient bond to prevent delamination during high temperature processing.
Abstract:
A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low Tg glass, a precursor of a low Tg glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200° C.