公开(公告)号：US20140186773A1

公开(公告)日：2014-07-03

申请号：US13732944

申请日：2013-01-02

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/20 ,  H01L21/02

CPC classification number: G03F7/20 ,  H01L21/02109 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/0276

Abstract: Provided is a method including providing a substrate and forming a bottom anti-reflective coating (BARC) on the substrate. The BARC includes a first portion overlying a second portion, which has a different composition than the first portion. The different composition may provide a different dissolution property of the BARC in a developer. A photoresist layer is formed on the first portion of the BARC. The photoresist layer is then irradiated and developed. The developing includes using a developer to remove a region of the photoresist layer and a region of the first and second portions of the BARC.

Abstract translation: 提供了一种方法，包括提供衬底并在衬底上形成底部抗反射涂层（BARC）。 BARC包括覆盖第二部分的第一部分，其具有与第一部分不同的组成。 不同的组合物可以提供BARC在显影剂中的不同溶解性质。 在BARC的第一部分上形成光致抗蚀剂层。 然后照射和显影光致抗蚀剂层。 显影剂包括使用显影剂去除光致抗蚀剂层的区域和BARC的第一和第二部分的区域。

公开(公告)号：US08658344B2

公开(公告)日：2014-02-25

申请号：US13534961

申请日：2012-06-27

Applicant: Chien-Wei Wang ,  Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jeng Lin

Inventor： Chien-Wei Wang ,  Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jeng Lin

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/029 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0045 ,  Y10S430/106 ,  Y10S430/114 ,  Y10S430/12 ,  Y10S430/128

Abstract: A resist material and methods using the resist material are disclosed herein. An exemplary method includes forming a resist layer over a substrate, wherein the resist layer includes a polymer, a photoacid generator, an electron acceptor, and a photodegradable base; performing an exposure process that exposes portions of the resist layer with radiation, wherein the photodegradable base is depleted in the exposed portions of the resist layer during the exposure process; and performing an developing process on the resist layer.

Abstract translation: 本文公开了抗蚀剂材料和使用抗蚀剂材料的方法。 一种示例性方法包括在衬底上形成抗蚀剂层，其中抗蚀剂层包括聚合物，光致酸产生剂，电子受体和可光降解的碱; 执行曝光处理，其用辐射曝光抗蚀剂层的一部分，其中光可降解碱在曝光过程中耗尽抗蚀剂层的曝光部分; 并对抗蚀剂层进行显影处理。

公开(公告)号：US20140011139A1

公开(公告)日：2014-01-09

申请号：US13543582

申请日：2012-07-06

Applicant: Fang Lin ,  Ching-Yu Chang

Inventor： Fang Lin ,  Ching-Yu Chang

IPC: C09D135/02 ,  G03F7/20

CPC classification number: G03F7/09 ,  G03F7/0046

Abstract: Methods and materials for making a semiconductor device are described. The method includes providing a substrate, forming a surface-modified middle layer (SM-ML) that includes a fluorine-containing material over the substrate, forming a photoresist layer over the SM-ML, exposing the photoresist layer to an exposure energy, and developing the photoresist layer.

Abstract translation: 描述制造半导体器件的方法和材料。 该方法包括提供衬底，在衬底上形成包含含氟材料的表面改性中间层（SM-ML），在SM-ML上形成光致抗蚀剂层，将光致抗蚀剂层暴露于曝光能量;以及 显影光致抗蚀剂层。

公开(公告)号：US20130266899A1

公开(公告)日：2013-10-10

申请号：US13442687

申请日：2012-04-09

Applicant: Chen-Hau Wu ,  Ching-Yu Chang

Inventor： Chen-Hau Wu ,  Ching-Yu Chang

IPC: G03F7/027 ,  G03F7/20 ,  G03F7/004

CPC classification number: G03F7/095 ,  G03F7/0045 ,  G03F7/0392

Abstract: The present disclosure provides a sensitive material. The sensitive material includes a polymer that turns soluble to a base solution in response to reaction with acid; a plurality of photo-base generators (PBGs) that decompose to form base in response to radiation energy; and a thermal sensitive component that generates acid in response to thermal energy.

Abstract translation: 本公开提供敏感材料。 敏感材料包括响应于与酸的反应而将可溶于碱溶液的聚合物; 响应于辐射能分解形成底座的多个光源发生器（PBG）; 以及响应于热能产生酸的热敏组分。

公开(公告)号：US08512939B2

公开(公告)日：2013-08-20

申请号：US12566762

申请日：2009-09-25

Applicant: Chien-Wei Wang ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ching-Yu Chang

IPC: G03F7/26

CPC classification number: G03F7/425 ,  H01L21/31133

Abstract: A method for fabricating an integrated circuit device is disclosed. The method may include providing a substrate; forming a first material layer over the substrate; forming a patterned second material layer over the substrate; and removing the patterned second material layer with a fluid comprising a steric hindered organic base and organic solvent.

Abstract translation: 公开了一种用于制造集成电路器件的方法。 该方法可以包括提供基底; 在所述衬底上形成第一材料层; 在所述衬底上形成图案化的第二材料层; 以及用包含空间位阻有机碱和有机溶剂的流体除去图案化的第二材料层。

公开(公告)号：US08507177B2

公开(公告)日：2013-08-13

申请号：US13050305

申请日：2011-03-17

Applicant: Hsien-Cheng Wang ,  Chin-Hsiang Lin ,  Heng-Jen Lee ,  Ching-Yu Chang ,  Hua-Tai Lin ,  Burn Jeng Lin

Inventor： Hsien-Cheng Wang ,  Chin-Hsiang Lin ,  Heng-Jen Lee ,  Ching-Yu Chang ,  Hua-Tai Lin ,  Burn Jeng Lin

IPC: G03F7/004 ,  G03F7/30 ,  G03F7/039

CPC classification number: G03F7/0397 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/30 ,  G03F7/38 ,  G03F7/70858 ,  Y10S430/106 ,  Y10S430/111

Abstract: A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy.

Abstract translation: 用于光刻处理的材料包括响应于与酸的反应而变成可溶于碱溶液的聚合物和多个具有磁性元素的磁放大发生器（MAG），并分别与磁性元件形成酸结合 响应辐射能量。

公开(公告)号：US08349739B2

公开(公告)日：2013-01-08

申请号：US12546812

申请日：2009-08-25

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/302

CPC classification number: H01L21/31111 ,  H01L21/30604 ,  H01L21/32134

Abstract: The present disclosure provides a method for etching a substrate. The method includes forming a resist pattern on the substrate; applying an etching chemical fluid to the substrate, wherein the etching chemical fluid includes a diffusion control material; removing the etching chemical fluid; and removing the resist pattern.

Abstract translation: 本公开提供了蚀刻基板的方法。 该方法包括在基板上形成抗蚀剂图案; 将蚀刻化学流体施加到所述基底，其中所述蚀刻化学流体包括扩散控制材料; 去除蚀刻化学液体; 并去除抗蚀剂图案。

公开(公告)号：US08323870B2

公开(公告)日：2012-12-04

申请号：US12916759

申请日：2010-11-01

Applicant: Fong-Cheng Lee ,  Ching-Yu Chang

Inventor： Fong-Cheng Lee ,  Ching-Yu Chang

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/40

CPC classification number: G03F7/0382 ,  G03F7/0392 ,  G03F7/325

Abstract: The present disclosure provides a resist utilized in a photolithography patterning process. The resist includes a polymeric material having a plurality of zipper molecules, each including a first zipper portion and a second zipper portion, wherein the first and second zipper portions each include a plurality of zipper branches bonded together in pairs and cleavable to one of thermal energy, radiation energy, and chemical reaction.

Abstract translation: 本公开提供了在光刻图案化工艺中使用的抗蚀剂。 抗蚀剂包括具有多个拉链分子的聚合材料，每个拉链分子包括第一拉链部分和第二拉链部分，其中第一和第二拉链部分各自包括成对地结合在一起的多个拉链分支并且可切割成热能之一 ，辐射能和化学反应。

公开(公告)号：US08304179B2

公开(公告)日：2012-11-06

申请号：US12463501

申请日：2009-05-11

Applicant: Chien-Wei Wang ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ching-Yu Chang

IPC: G03F7/26

CPC classification number: G03F7/40 ,  H01L21/0273 ,  H01L21/266 ,  H01L21/31133 ,  H01L21/31138

Abstract: The present disclosure provides a method for manufacturing a semiconductor device. The method includes coating a photoresist on a substrate. The photoresist is exposed to radiation. The radiation exposed photoresist is baked. The radiation exposed and baked photoresist is developed to create an image pattern. The image pattern is treated with a treating material. An ion implantation process is performed to the substrate and the treated image pattern. The image pattern is stripped from the substrate. A carbon atom ratio of the treating material is less than a carbon atom ratio of the photoresist.

Abstract translation: 本公开提供了一种用于制造半导体器件的方法。 该方法包括在基底上涂覆光致抗蚀剂。 光致抗蚀剂暴露于辐射。 辐射曝光的光致抗蚀剂被烘烤。 辐射曝光和烘烤的光致抗蚀剂被开发以产生图像图案。 用处理材料处理图像图案。 对基板和经处理的图像图案执行离子注入工艺。 图案图案从基板剥离。 处理材料的碳原子比小于光致抗蚀剂的碳原子比。

公开(公告)号：US20120090547A1

公开(公告)日：2012-04-19

申请号：US13337846

申请日：2011-12-27

Applicant: Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

IPC: C23C16/46

CPC classification number: H01L21/0273 ,  B05D1/60 ,  B05D3/02 ,  G03F7/167 ,  H01L21/0276

Abstract: Provided is a system for vapor deposition of a coating material onto a semiconductor substrate. The system includes a chemical supply chamber, a supply nozzle operable to dispense vapor, and a heating element operable to provide heat to a substrate in-situ with the dispensing of vapor. The system may further include reaction chamber(s) and/or mixing chamber(s).

Abstract translation: 提供了一种用于将涂料气相沉积到半导体衬底上的系统。 该系统包括化学品供应室，可操作以分配蒸气的供应喷嘴和可操作以随着蒸汽分配而原位向基板提供热量的加热元件。 该系统可以进一步包括反应室和/或混合室。