公开(公告)号：US20170288070A1

公开(公告)日：2017-10-05

申请号：US15089381

申请日：2016-04-01

Applicant: Kieran Mark Tracy ,  David D. Smith ,  Venkatasubramani Balu ,  Asnat Masad ,  Ann Waldhauer

Inventor： Kieran Mark Tracy ,  David D. Smith ,  Venkatasubramani Balu ,  Asnat Masad ,  Ann Waldhauer

IPC: H01L31/0236 ,  H01L31/0747 ,  H01L31/20 ,  H01L31/0216

CPC classification number: H01L31/02363 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/035281 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  Y02E10/50 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548

Abstract: Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.

公开(公告)号：US09553229B2

公开(公告)日：2017-01-24

申请号：US13220974

申请日：2011-08-30

Applicant: Douglas H. Rose ,  Pongsthorn Uralwong ,  David D. Smith

Inventor： Douglas H. Rose ,  Pongsthorn Uralwong ,  David D. Smith

IPC: H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/02008 ,  H01L31/18

Abstract: A solar cell is fabricated by etching one or more of its layers without substantially etching another layer of the solar cell. In one embodiment, a copper layer in the solar cell is etched without substantially etching a topmost metallic layer comprising tin. For example, an etchant comprising sulfuric acid and hydrogen peroxide may be employed to etch the copper layer selective to the tin layer. A particular example of the aforementioned etchant is a Co-Bra Etch® etchant modified to comprise about 1% by volume of sulfuric acid, about 4% by volume of phosphoric acid, and about 2% by volume of stabilized hydrogen peroxide. In one embodiment, an aluminum layer in the solar cell is etched without substantially etching the tin layer. For example, an etchant comprising potassium hydroxide may be employed to etch the aluminum layer without substantially etching the tin layer.

Abstract translation: 通过蚀刻其一个或多个层而不基本上蚀刻太阳能电池的另一层来制造太阳能电池。 在一个实施例中，蚀刻太阳能电池中的铜层而基本上不蚀刻包含锡的最顶层金属层。 例如，可以使用包含硫酸和过氧化氢的蚀刻剂来蚀刻对锡层有选择性的铜层。 上述蚀刻剂的一个具体实例是改性为包含约1体积％的硫酸，约4体积％的磷酸和约2体积％的稳定的过氧化氢的Co-Bra Etch蚀刻剂。 在一个实施例中，蚀刻太阳能电池中的铝层而基本上不蚀刻锡层。 例如，可以使用包含氢氧化钾的蚀刻剂来蚀刻铝层而基本上不蚀刻锡层。

公开(公告)号：US20170012161A1

公开(公告)日：2017-01-12

申请号：US15269727

申请日：2016-09-19

Applicant: Peter J. Cousins ,  David D. Smith ,  Seung Bum Rim

Inventor： Peter J. Cousins ,  David D. Smith ,  Seung Bum Rim

IPC: H01L31/0747 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0368

CPC classification number: H01L31/0747 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.

Abstract translation: 公开了一种制造高效太阳能电池的方法。 该方法包括在硅衬底的背面上提供薄的电介质层和掺杂的多晶硅层。 随后，可以在硅衬底的背面和前侧上形成高质量的氧化物层和宽带隙掺杂的半导体层。 然后可以执行通过接触开口将金属指板平坦化到掺杂多晶硅层上的金属化工艺。 镀金属指可以形成第一金属网格线。 可以通过将金属直接电镀到硅衬底的背侧上的发射极区域来形成第二金属网格线，从而消除了对第二金属网格线的接触开口的需要。 其中优点在于，制造方法提供了降低的热处理，降低的蚀刻步骤，提高的效率以及用于制造高效率太阳能电池的简化程序。

公开(公告)号：US20160064576A1

公开(公告)日：2016-03-03

申请号：US14939633

申请日：2015-11-12

Applicant: Andy Luan ,  David D. Smith ,  Peter John Cousins ,  Sheng Sun

Inventor： Andy Luan ,  David D. Smith ,  Peter John Cousins ,  Sheng Sun

IPC: H01L31/02 ,  H01L31/0216

CPC classification number: H01L31/02008 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/0682 ,  Y02E10/547

Abstract: Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described.

Abstract translation: 描述了用于太阳能电池的泄漏路径层和形成用于太阳能电池的泄漏路径层的方法。

公开(公告)号：US09263625B2

公开(公告)日：2016-02-16

申请号：US14320438

申请日：2014-06-30

Applicant: David D. Smith ,  Timothy Weidman ,  Staffan Westerberg

Inventor： David D. Smith ,  Timothy Weidman ,  Staffan Westerberg

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/0224

CPC classification number: H01L31/03685 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/0288 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a back contact solar cell includes a crystalline silicon substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region is disposed above the crystalline silicon substrate. The first polycrystalline silicon emitter region is doped with dopant impurity species of a first conductivity type and further includes ancillary impurity species different from the dopant impurity species of the first conductivity type. A second polycrystalline silicon emitter region is disposed above the crystalline silicon substrate and is adjacent to but separated from the first polycrystalline silicon emitter region. The second polycrystalline silicon emitter region is doped with dopant impurity species of a second, opposite, conductivity type. First and second conductive contact structures are electrically connected to the first and second polycrystalline silicon emitter regions, respectively.

Abstract translation: 描述了使用离子注入制造太阳能电池发射极区域的方法，以及所得到的太阳能电池。 在一个示例中，背接触太阳能电池包括具有光接收表面和背表面的晶体硅衬底。 第一多晶硅发射极区域设置在晶体硅衬底之上。 第一多晶硅发射极区掺杂有第一导电类型的掺杂剂杂质种类，并且还包括与第一导电类型的掺杂杂质种类不同的辅助杂质种类。 第二多晶硅发射极区域设置在晶体硅衬底之上并且与第一多晶硅发射极区域相邻但分离。 第二多晶硅发射极区掺杂有第二相反导电类型的掺杂杂质物质。 第一和第二导电接触结构分别电连接到第一和第二多晶硅发射极区域。

公开(公告)号：US20150380581A1

公开(公告)日：2015-12-31

申请号：US14317672

申请日：2014-06-27

Applicant: Michael C. Johnson ,  Kieran Mark Tracy ,  Princess Carmi Tomada ,  David D. Smith ,  Seung Bum Rim ,  Périne Jaffrennou

Inventor： Michael C. Johnson ,  Kieran Mark Tracy ,  Princess Carmi Tomada ,  David D. Smith ,  Seung Bum Rim ,  Périne Jaffrennou

IPC: H01L31/0368 ,  H01L31/028 ,  H01L31/18 ,  H01L31/077 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/0376

CPC classification number: H01L31/02167 ,  H01L31/02363 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  Y02E10/547

Abstract: Methods of passivating light-receiving surfaces of solar cells with crystalline silicon, and the resulting solar cells, are described. In an example, a solar cell includes a silicon substrate having a light-receiving surface. An intrinsic silicon layer is disposed above the light-receiving surface of the silicon substrate. An N-type silicon layer is disposed on the intrinsic silicon layer. One or both of the intrinsic silicon layer and the N-type silicon layer is a micro- or poly-crystalline silicon layer. In another example, a solar cell includes a silicon substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the silicon substrate. An N-type micro- or poly-crystalline silicon layer disposed on the passivating dielectric layer.

Abstract translation: 描述了用结晶硅钝化太阳能电池的光接收表面的方法和所得的太阳能电池。 在一个示例中，太阳能电池包括具有光接收表面的硅衬底。 本征硅层设置在硅衬底的光接收表面之上。 N型硅层设置在本征硅层上。 本征硅层和N型硅层中的一个或两个是微晶或多晶硅层。 在另一示例中，太阳能电池包括具有受光面的硅基板。 钝化介质层设置在硅衬底的光接收表面上。 设置在钝化介电层上的N型微晶或多晶硅层。

公开(公告)号：US20150280029A1

公开(公告)日：2015-10-01

申请号：US14229759

申请日：2014-03-28

Applicant: Gabriel Harley ,  Scott Harrington ,  David D. Smith

Inventor： Gabriel Harley ,  Scott Harrington ,  David D. Smith

IPC: H01L31/0224 ,  H01L31/02 ,  H01L31/18 ,  H01L31/068 ,  H01L31/0687

CPC classification number: H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/547

Abstract: Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a plurality of alternating N-type and P-type regions in or above a substrate. The method also involves forming a metal seed layer on the plurality of alternating N-type and P-type regions. The method also involves patterning at least a portion of the metal seed layer at regions in alignment with locations between the alternating N-type and P-type regions. The method also involves, subsequent to the patterning, etching to form trenches at the locations between the alternating N-type and P-type regions, isolating the alternating N-type and P-type regions from one another.

Abstract translation: 描述了用于太阳能电池的金属化和所得到的太阳能电池的方法。 在一个实例中，制造太阳能电池的方法包括在衬底中或上方形成多个交替的N型和P型区域。 该方法还涉及在多个交替的N型和P型区域上形成金属种子层。 该方法还包括在与交替的N型和P型区域之间的位置对准的区域处图案化金属种子层的至少一部分。 该方法还包括在图案化之后，在交替的N型和P型区域之间的位置处进行蚀刻以形成沟槽，将交替的N型和P型区彼此隔离。

公开(公告)号：US20150280021A1

公开(公告)日：2015-10-01

申请号：US14229716

申请日：2014-03-28

Applicant: Gabriel Harley ,  Taeseok Kim ,  Richard Hamilton Sewell ,  Michael Morse ,  David D. Smith ,  Matthieu Moors ,  Jens-Dirk Moschner

Inventor： Gabriel Harley ,  Taeseok Kim ,  Richard Hamilton Sewell ,  Michael Morse ,  David D. Smith ,  Matthieu Moors ,  Jens-Dirk Moschner

IPC: H01L31/0224 ,  H01L31/02 ,  H01L31/0687

CPC classification number: H01L31/02245 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0475 ,  H01L31/0512 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0745 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

Abstract: Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

Abstract translation: 描述了用于太阳能电池和所得太阳能电池的箔基金属化的方法。 在一个示例中，太阳能电池包括基板。 多个交替的N型和P型半导体区域设置在衬底中或上方。 导电接触结构设置在多个交替的N型和P型半导体区域的上方。 导电接触结构包括多个金属种子材料区域，其提供设置在每个交替的N型和P型半导体区域上的金属种子材料区域。 金属箔设置在多个金属种子材料区域上，金属箔具有阳极化部分，隔离与交替的N型和P型半导体区对应的金属箔的金属区域。

公开(公告)号：US20150179870A1

公开(公告)日：2015-06-25

申请号：US14137970

申请日：2013-12-20

Applicant: Matthieu Moors ,  David D. Smith ,  Gabriel Harley ,  Taeseok Kim

Inventor： Matthieu Moors ,  David D. Smith ,  Gabriel Harley ,  Taeseok Kim

IPC: H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/061 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1864 ,  Y02E10/547

Abstract: A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

Abstract translation: 公开了一种制造太阳能电池的方法。 该方法可以包括在太阳能电池结构的表面上形成电介质区域，并在电介质层上形成金属层。 该方法还可以包括配置具有特定形状的激光束并且将具有特定形状的激光束引导到金属层上，其中特定形状允许在金属层和太阳能电池结构之间形成接触。

公开(公告)号：US09054255B2

公开(公告)日：2015-06-09

申请号：US13429138

申请日：2012-03-23

Applicant: Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

Inventor： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

IPC: H01L21/00 ,  H01L31/0747 ,  H01L31/068 ,  H01L31/072 ,  H01L31/0745

CPC classification number: H01L31/0747 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/0745 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

Abstract translation: 描述具有由宽带隙半导体材料构成的发射极区域的太阳能电池。 在一个示例中，一种方法包括在具有受控气氛的处理工具中形成在太阳能电池的半导体衬底的表面上的薄介电层。 半导体衬底具有带隙。 在不从处理工具的受控气氛中移除半导体衬底的情况下，在薄介电层上形成半导体层。 半导体层具有比半导体衬底的带隙高至少约0.2电子伏特（eV）的带隙。