摘要:
A cordless nailer is provided having a nosepiece assembly with improved features. The nosepiece assembly includes a driver retention feature that is provided to retain a drive blade from accidentally escaping the nailer. The nosepiece assembly includes a nosepiece, a nosepiece cover coupled to the nosepiece and moveable between a first closed position and a second open position. The nosepiece cover includes a surface formed on an end thereof, wherein at least one of the nosepiece and nosepiece cover forms a channel. A driver is disposed within the channel, wherein as the nosepiece cover is moved from the first closed position to the second open position, the surface of the nosepiece cover prevents the driver from moving from the channel.
摘要:
A method of forming a component capable of being exposed to a plasma in a process chamber comprises forming a structure comprising a surface and electroplating yttrium, and optionally aluminum or zirconium, onto the surface. Thereafter, the electroplated layer can be annealed to oxide the yttrium and other electroplated species.
摘要:
A method for forming front contacts on a silicon solar cell which includes texture etching the front surface of the solar cell, forming an antireflective layer over the face, diffusing a doping material into the face to form a heavily doped region in valleys formed during the texture-etching of the face, depositing an electrically conductive material on the heavily doped regions in the valleys and annealing the solar cell.
摘要:
The present invention relates to forming contacts for solar cells. According to one aspect, an interdigitated back contact (IBC) cell design according to the invention requires only one patterning step to form the interdigitated junctions (vs. two for alternate designs). According to another aspect, the back contact structure includes a silicon nitride or a nitrided tunnel dielectric. This acts as a diffusion barrier, so that the properties of the tunnel dielectric can be maintained during a high temperature process step, and boron diffusion through the tunnel dielectric can be prevented. According to another aspect, the process for forming the back contacts requires no deep drive-in diffusions.
摘要:
A yaw stability control system for a vehicle detects and eliminates the vehicle yaw angle resulting from a body-force-disturbance and returns the vehicle to a pre disturbance heading. A yaw rate module generates a signal indicative of the vehicle yaw rate error. A yaw angle error module is triggered in response to a body-force-disturbance being detected by a body-force-disturbance detection unit, and performs integrations of the yaw rate signals to calculate a yaw angle error in order to obtain a correction of the vehicle yaw angle resulting from the body-force-disturbance. A yaw control module uses the yaw angle error in combination with the yaw rate error for a limited time period to generate yaw control signals that are sent to the vehicle brakes and/or active steering system for performing vehicle yaw stability control operations a signal to perform a body-force-disturbance yaw stability control operation for.
摘要:
A system and method for detecting a fault in a pitch rate sensor onboard a vehicle. Signals, including a steering wheel angle, a yaw rate, a roll rate, a longitudinal acceleration, a lateral acceleration, and a vehicle speed, are processed in a controller to validate a pitch rate signal. Upon detection of a fault in the pitch rate signal, the system and method will determine a process in which to minimize negative effects of the pitch sensor fault. The system and method will then direct the controller to select a process, such as a direct shutdown, a slow shutdown or replace a signal, in a relevant control system, based on the determination.
摘要:
An article which is resistant to corrosion or erosion by chemically active plasmas and a method of making the article are described. The article is comprised of a metal or metal alloy substrate having on its surface a coating which is an oxide of the metal or metal alloy. The structure of the oxide coating is columnar in nature. The grain size of the crystals which make up the oxide is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and wherein the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate. Typically the metal is selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof.
摘要:
A processing method described herein provides a method of patterning a MoSe2 and/or Mo material, for example a layer of such material(s) in a thin-film structure. According to one aspect, the invention relates to etch solutions that can effectively etch through Mo and/or MoSe2. According to another aspect, the invention relates to etching such materials when such materials are processed with other materials in a thin film photovoltaic device. According to other aspects, the invention includes a process of etching Mo and/or MoSe2 with selectivity to a layer of CIGS material in an overall process flow. According to still further aspects, the invention relates to Mo and/or MoSe2 etch solutions that are useful in an overall photolithographic process for forming a photovoltaic cell and/or interconnects and test structures in a photovoltaic device.
摘要:
A cleaning process for recovering an anodized aluminum part is particularly useful when the part has been exposed to a fluorine-containing plasma in etch reactor. The part is bathed in an agitated solution of a fluoride acid, such as ammonium fluoride, which converts aluminum fluoride to a soluble fluoride. The part is rinsed in water. The pores of the cleaned anodization may be resealed by a submerging the part in hot agitated deionized water.
摘要:
Disclosed herein is a cleaning method useful in removing contaminants from a surface of a coating which comprises an oxide or fluoride of a Group III B metal. Typically the coating overlies an aluminum substrate which is present as part of a semiconductor processing apparatus. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al2O3.