公开(公告)号：US20100237046A1

公开(公告)日：2010-09-23

申请号：US12772232

申请日：2010-05-02

Applicant: Martin Kent ,  Eric J. Strang

Inventor： Martin Kent ,  Eric J. Strang

IPC: H01L21/306 ,  C23F1/02

CPC classification number: B05B12/12 ,  B05B12/04 ,  B05B13/02 ,  C01B7/191 ,  C09K13/08 ,  C23F1/02 ,  C23F1/12 ,  H01L21/02049 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68742

Abstract: A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.

Abstract translation: 描述了干燥的非等离子体处理系统和用于去除氧化物材料的方法。 处理系统被配置为提供一个或多个基底的化学处理，其中每个基底在受控条件下暴露于气态化学物质，包括表面温度和气体压力。 此外，处理系统被配置为提供每个基板的热处理，其中每个基板被热处理以去除每个基板上的经化学处理的表面。

公开(公告)号：US20100193471A1

公开(公告)日：2010-08-05

申请号：US12754662

申请日：2010-04-06

Applicant: Merritt FUNK ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

Inventor： Merritt FUNK ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

IPC: C23F1/00 ,  C23C16/52

CPC classification number: C23C16/4412 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

Abstract: A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

Abstract translation: 等离子体处理系统包括处理室，被配置为保持用于等离子体处理的衬底的衬底保持器和气体注入组件。 气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。 等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

公开(公告)号：US07718030B2

公开(公告)日：2010-05-18

申请号：US11233025

申请日：2005-09-23

Applicant: Merritt Funk ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

Inventor： Merritt Funk ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

IPC: H01L21/3065 ,  C23C16/00 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/4412 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

Abstract: A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

Abstract translation: 等离子体处理系统包括处理室，被配置为保持用于等离子体处理的衬底的衬底保持器和气体注入组件。 气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。 等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

公开(公告)号：US07563328B2

公开(公告)日：2009-07-21

申请号：US10466107

申请日：2002-01-22

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/08 ,  C23C16/44

CPC classification number: H01J37/3244 ,  C23C16/4402 ,  C23C16/455 ,  H01J2237/022

Abstract: A gas injection system (10) is provided for a processing reactor and a method is provided for reducing transport of particulate material onto a substrate (12) during process gas start-up. The system (10) includes a two-way valve (40) having an inlet (42) connected to a mass flow controller (30), and first and second outlets (44, 46). The system (10) includes a principle gas feed line (50) connecting the first outlet (44) of the valve (40) to an inject plate (24) within a vacuum chamber (20) at a position above a substrate (12), and a start-up line (60) connecting the second outlet (46) to an orifice (62) in the chamber (20) at a position not above the substrate (12). Alternatively, the system includes a valve having an inlet connected to the mass flow controller, and a first outlet. In the alternative system, a first gas feed line connects the first outlet of the valve to the inject plate (24), and an acoustical dampening device is provided within the first gas feed line.

Abstract translation: 提供了一种用于处理反应器的气体注入系统（10），并且提供了一种用于在处理气体启动期间减少颗粒材料在基底（12）上的输送的方法。 系统（10）包括具有连接到质量流量控制器（30）的入口（42）和第一和第二出口（44,46）的二通阀（40）。 系统（10）包括在基板（12）上方的位置处将真空室（20）内的阀（40）的第一出口（44）与喷射板（24）连接的主要气体供给管线（50） 以及在不在基板（12）上方的位置处将第二出口（46）连接到腔室（20）中的孔口（62）的启动线（60）。 或者，该系统包括具有连接到质量流量控制器的入口的阀和第一出口。 在替代系统中，第一气体供给管路将阀的第一出口连接到喷射板（24），并且在第一气体供给管线内设置有声阻尼装置。

公开(公告)号：US20080083723A1

公开(公告)日：2008-04-10

申请号：US11525815

申请日：2006-09-25

Applicant: Yuji Tsukamoto ,  Eric J. Strang

Inventor： Yuji Tsukamoto ,  Eric J. Strang

IPC: F27D11/00

CPC classification number: F27D5/0037 ,  C23C16/4586 ,  C23C16/46 ,  H01J2237/2001 ,  H01L21/67103

Abstract: A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m2-K) through the thermal insulator between the temperature controlled support base and the substrate support.

Abstract translation: 用于在处理系统中支撑衬底的衬底保持器包括具有第一温度的温度控制的支撑基座和与温度受控的支撑基座相对并且被配置为支撑衬底的衬底支撑件。 还包括一个或多个加热元件，其耦合到衬底支撑件并且被配置为将衬底支撑件加热到高于第一温度的第二温度，以及设置在温度受控支撑基底和衬底支撑件之间的热绝缘体。 热绝缘体包括通过温度受控支撑基底和基底支撑件之间的热绝缘体的传热系数（W / m 2 SUP -K）的不均匀的空间变化。

公开(公告)号：US07260500B2

公开(公告)日：2007-08-21

申请号：US10495117

申请日：2003-01-30

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: G06F11/277

CPC classification number: H01J37/32935 ,  H01J37/32192 ,  H01J37/32275 ,  H01J37/3299

Abstract: An equipment status monitoring system having at least one multi-modal resonator included as a part of a semiconductor processing system and a power source coupled to the at least one multi-modal resonator. The power source is configured to produce a microwave excitation signal corresponding to at least one mode of the multi-modal resonator and emit the microwave excitation signal into the semiconductor processing chamber. The system includes a detector coupled to the at least one multi-modal resonator and configured to measure the excitation signal. The system includes a control system connected to the detector and configured to provide a comparison of at least one measured excitation signal with a normal excitation signal corresponding to a normal status.

Abstract translation: 包括作为半导体处理系统的一部分的至少一个多模式谐振器的设备状态监视系统和耦合到所述至少一个多模谐振器的电源。 电源被配置为产生对应于多模式谐振器的至少一个模式的微波激励信号，并将微波激励信号发射到半导体处理室中。 该系统包括耦合到至少一个多模谐振器并被配置为测量激励信号的检测器。 该系统包括连接到检测器并被配置为提供至少一个测量的激励信号与对应于正常状态的正常激励信号的比较的控制系统。

公开(公告)号：US07214289B2

公开(公告)日：2007-05-08

申请号：US10493138

申请日：2002-10-24

Applicant: Eric J. Strang ,  Richard Parsons

Inventor： Eric J. Strang ,  Richard Parsons

IPC: C23F1/00 ,  H01L21/306

CPC classification number: H01L21/67253 ,  G01B15/02 ,  H01J37/32192 ,  H01J37/32275 ,  H01J37/3299 ,  H01L21/67069

Abstract: A wall film monitoring system includes first and second microwave mirrors in a plasma processing chamber each having a concave surface. The concave surface of the second mirror is oriented opposite the concave surface of the first mirror. A power source is coupled to the first mirror and configured to produce a microwave signal. A detector is coupled to at least one of the first mirror and the second mirror and configured to measure a vacuum resonance voltage of the microwave signal. A control system is connected to the detector that compares a first measured voltage and a second measured voltage and determines whether the second voltage exceeds a threshold value. A method of monitoring wall film in a plasma chamber includes loading a wafer in the chamber, setting a frequency of a microwave signal output to a resonance frequency, and measuring a first vacuum resonance voltage of the microwave signal. The method includes processing the wafer, measuring a second vacuum resonance voltage of the microwave signal, and determining whether the second measured voltage exceeds a threshold value using the first measured voltage as a reference value.

公开(公告)号：US07199328B2

公开(公告)日：2007-04-03

申请号：US10487232

申请日：2002-08-29

Applicant: Eric J. Strang

Inventor： Eric J. Strang

IPC: B23K10/00

CPC classification number: H01J37/32449 ,  H01J37/32082 ,  H01J37/32146 ,  H01L21/67253

Abstract: A plasma processing system including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first gas and a second gas to the process chamber. The system includes a controller that controls the gas injection system to continuously flow a first gas flow to the process chamber and to pulse a second gas flow to the process chamber at a first time. The controller pulses a RF power to the substrate holder at a second time. A method of operating a plasma processing system is provided that includes adjusting a background pressure in a process chamber, where the background pressure is established by flowing a first gas flow using a gas injection system, and igniting a processing plasma in the process chamber. The method includes pulsing a second gas flow using the gas injection system at a first time, and pulsing a RF power to a substrate holder at a second time.

Abstract translation: 一种等离子体处理系统，包括处理室，设置在处理室内的衬底保持器，以及构造成将第一气体和第二气体供应到处理室的气体注入系统。 该系统包括控制器，其控制气体注入系统以将第一气流连续地流动到处理室，并且在第一时间将第二气流脉冲到处理室。 控制器在第二时间将RF功率脉冲到衬底保持器。 提供了一种操作等离子体处理系统的方法，其包括调整处理室中的背景压力，其中通过使用气体注入系统流动第一气流并且点燃处理室中的处理等离子体来建立背景压力。 该方法包括在第一时间使用气体注入系统脉动第二气流，并且在第二时间将RF功率脉冲到衬底保持器。

公开(公告)号：US06894769B2

公开(公告)日：2005-05-17

申请号：US10331456

申请日：2002-12-31

Applicant: Audunn Ludviksson ,  Eric J. Strang

Inventor： Audunn Ludviksson ,  Eric J. Strang

IPC: G01J3/30 ,  G01J3/443 ,  G01N21/00 ,  G01N21/64 ,  G01N21/84 ,  H01J37/32

CPC classification number: H01J37/32935 ,  G01N21/645 ,  G01N2021/8416 ,  H01J37/32963 ,  H01J37/32972 ,  H01J37/3299

Abstract: A method and system are provided for monitoring erosion of system components in a plasma processing system. The system components contain emitters that are capable of producing characteristic fluorescent light emission when exposed to a plasma. The method utilizes optical emission to monitor fluorescent light emission from the emitters for determining system component status. The method can evaluate erosion of system components in a plasma, by monitoring fluorescent light emission from the emitters. Consumable system components that can be monitored using the method include rings, shields, electrodes, baffles, and liners.

Abstract translation: 提供了一种用于监测等离子体处理系统中的系统部件的侵蚀的方法和系统。 系统组件包含当暴露于等离子体时能够产生特征荧光发射的发射体。 该方法利用光发射来监测来自发射器的荧光发射，以确定系统组件状态。 该方法可以通过监测来自发射器的荧光发射来评估等离子体中系统组件的侵蚀。 可以使用该方法监测的消耗品系统组件包括环，屏蔽，电极，挡板和衬垫。

公开(公告)号：US06887341B2

公开(公告)日：2005-05-03

申请号：US10291754

申请日：2002-11-12

Applicant: Eric J. Strang ,  Paul Moroz ,  Steven T. Fink

Inventor： Eric J. Strang ,  Paul Moroz ,  Steven T. Fink

IPC: H05H1/46 ,  B01J19/08 ,  C23C16/50 ,  C23C16/509 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/306 ,  C23C16/00 ,  C23C16/455 ,  C23F1/00

CPC classification number: H01J37/321 ,  H01J37/32623 ,  H01J37/32633

Abstract: A plasma processing apparatus for spatial control of dissociation and ionization and a method for controlling the dissociation and ionization in the plasma. An aspect of the present invention provides a plasma processing apparatus for spatial control of dissociation and ionization includes a process chamber, a plasma generating system configured and arranged to produce a plasma in the process chamber, a substrate holder configured to hold a substrate during substrate processing, a gas source configured to introduce gases into the process chamber, a pressure-control system for maintaining a selected pressure within the process chamber, and, a plurality of partitions dividing the internal volume of the process chamber into one or more spatial zones. These partitions extend from a wall of the process chamber toward said substrate holder.

Abstract translation: 用于解离和电离的空间控制的等离子体处理装置和用于控制等离子体中的离解和离子化的方法。 本发明的一个方面提供了一种用于解离和电离的空间控制的等离子体处理装置，包括处理室，等离子体生成系统，其配置和布置成在处理室中产生等离子体;衬底保持器，其构造成在衬底处理期间保持衬底 构造成将气体引入处理室的气源，用于保持处理室内的选定压力的压力控制系统，以及将处理室的内部容积分成一个或多个空间区域的多个隔板。 这些隔板从处理室的壁朝向所述衬底保持器延伸。