公开(公告)号：US5201681A

公开(公告)日：1993-04-13

申请号：US848727

申请日：1992-03-09

申请人： Masahiko Okunuki ,  Akira Suzuki ,  Isamu Shimoda ,  Tetsuya Kaneko ,  Takeo Tsukamoto ,  Toshihiko Takeda ,  Takao Yonehara ,  Takeshi Ichikawa

发明人： Masahiko Okunuki ,  Akira Suzuki ,  Isamu Shimoda ,  Tetsuya Kaneko ,  Takeo Tsukamoto ,  Toshihiko Takeda ,  Takao Yonehara ,  Takeshi Ichikawa

IPC分类号： H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J31/12

CPC分类号： H01J9/025 ,  H01J1/3042 ,  H01J3/022 ,  H01J31/127 ,  H01J2201/30446

摘要： A method of emitting electrons by applying a voltage between a voltage application electrode and a target to be irradiated with the electrons emitted from an electron emission electrode with a conical portion in an electron emission device. The voltage application electrode is formed to oppose the electron emission electrode so as to sandwich an insulating layer therebetween and the target. A charge of the electron emission electrode which is lost by electron emission during an electron emission operation is supplied after the electron emission operation is completed.

摘要翻译： 通过在电子发射装置中通过在电压施加电极和被电子发射电子发射的电子与电子发射电极发射的锥形部分之间施加电压来照射电子的方法。 电压施加电极形成为与电子发射电极相对以在其间夹有绝缘层和靶。 在电子发射操作完成之后，供给在电子发射操作期间被电子发射损失的电子发射电极的电荷。

公开(公告)号：US4999313A

公开(公告)日：1991-03-12

申请号：US528916

申请日：1990-05-29

申请人： Shiro Arikawa ,  Takao Yonehara

发明人： Shiro Arikawa ,  Takao Yonehara

IPC分类号： H01L21/20 ,  H01L21/761 ,  H01L21/762

CPC分类号： H01L21/02381 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/761 ,  H01L21/762 ,  Y10S117/913 ,  Y10S148/15 ,  Y10S148/152 ,  Y10S257/928

摘要： There is provided a semiconductor article together with a process for producing the same which article has a plurality of semiconductor single crystal regions comprising a semiconductor single crystal region of one electroconductive type and a semiconductor single crystal region of the opposite electroconductive type on the same insulator substrate. At least the semiconductor single crystal region of one electroconductive type being provided by forming a different material which is sufficiently greater in nucleation density than the material of the insulator substrate and sufficiently fine to the extent that only one single nucleus of the semiconductor material can grow and then permitting the semiconductor material to grow around the single nucleus formed as the center.

公开(公告)号：US08871640B2

公开(公告)日：2014-10-28

申请号：US13262830

申请日：2010-04-02

申请人： Takao Yonehara ,  Kiyofumi Sakaguchi ,  Nobuo Kawase ,  Kenji Nakagawa

发明人： Takao Yonehara ,  Kiyofumi Sakaguchi ,  Nobuo Kawase ,  Kenji Nakagawa

IPC分类号： H01L21/50 ,  H01L21/683 ,  H01L25/065 ,  H01L23/00

CPC分类号： H01L25/0657 ,  H01L21/6835 ,  H01L24/94 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor chip including an integrated circuit and a through-electrode penetrating a semiconductor layer includes the steps of preparing a first substrate including a release layer and a semiconductor layer formed on the release layer; forming an integrated circuit in the semiconductor layer; forming, in the semiconductor layer, a hole or groove having a depth that does not reach the release layer; filling the hole or the groove with an electrical conductor; bonding a second substrate to the semiconductor layer to form a bonded structure; separating the bonded structure at the release layer to prepare the second substrate to which the semiconductor layer is transferred; and removing at least a portion of the reverse surface side of the semiconductor layer exposed by the separation to expose the bottom of the electrical conductor.

摘要翻译： 制造包括集成电路和穿透半导体层的贯通电极的半导体芯片的方法包括以下步骤：制备包括在剥离层上形成的剥离层和半导体层的第一基板; 在半导体层中形成集成电路; 在所述半导体层中形成具有未到达所述剥离层的深度的孔或槽; 用电导体填充孔或槽; 将第二衬底接合到所述半导体层以形成接合结构; 在剥离层分离粘合结构，制备半导体层转移到其上的第二基板; 以及去除通过分离而暴露的半导体层的反面的至少一部分，以露出电导体的底部。

公开(公告)号：US20120034759A1

公开(公告)日：2012-02-09

申请号：US13262915

申请日：2010-04-02

申请人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Nobuo Kawase ,  Kenji Nakagawa

发明人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Nobuo Kawase ,  Kenji Nakagawa

IPC分类号： H01L21/30

CPC分类号： H01L25/0657 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/78 ,  H01L24/12 ,  H01L24/16 ,  H01L24/90 ,  H01L24/94 ,  H01L24/97 ,  H01L25/50 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68377 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/73203 ,  H01L2224/90 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A method of manufacturing a semiconductor device includes the steps of forming a plurality of first integrated circuits on the surface side of a first semiconductor substrate; forming a plurality of second integrated circuits in a semiconductor layer that is formed on a release layer provided on a second semiconductor substrate; bonding the two semiconductor substrates so that electrically bonding portions are bonded to each other to form a bonded structure; separating the second semiconductor substrate from the bonded structure at the release layer to transfer, to the first semiconductor substrate, the semiconductor layer in which the plurality of second integrated circuits are formed; and dicing the first semiconductor substrate to obtain stacked chips each including the first integrated circuit and the second integrated circuit.

摘要翻译： 一种制造半导体器件的方法包括在第一半导体衬底的表面侧形成多个第一集成电路的步骤; 在形成在设置在第二半导体衬底上的剥离层上的半导体层中形成多个第二集成电路; 键合两个半导体基板，使得电接合部分彼此结合以形成接合结构; 在所述剥离层处将所述第二半导体衬底与所述接合结构分离，以将形成有所述多个第二集成电路的所述半导体层转移到所述第一半导体衬底; 以及切割第一半导体衬底以获得每个包括第一集成电路和第二集成电路的堆叠芯片。

公开(公告)号：US20110311276A1

公开(公告)日：2011-12-22

申请号：US13254024

申请日：2010-03-01

申请人： Takao Yonehara ,  Yasuyoshi Takai

发明人： Takao Yonehara ,  Yasuyoshi Takai

IPC分类号： G03G15/04 ,  H01L27/15 ,  H01L21/30

CPC分类号： B41J2/45 ,  H01L21/6835 ,  H01L24/83 ,  H01L33/0079 ,  H01L2221/68359 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2924/00

摘要： Provided is a method for transferring, onto a second substrate, at least one of functional regions arranged and joined to a first separation layer that is disposed on a first substrate and that becomes separable by a treatment, in which regions on the second substrate where the functional regions are to be transferred have a second separation layer that becomes separable by a treatment. The method includes a step of joining the first substrate to the second substrate by bonding such that the functional regions contact the second separation layer; a step of separating the functional regions from the first substrate at the first separation layer; and a step of, before or after the step of separation, forming separation grooves penetrating through the second substrate and the second separation layer from a surface of the second substrate, the surface being opposite to a surface having the second separation layer thereon.

摘要翻译： 提供了一种用于将布置并连接到第一分离层的功能区域中的至少一个转移到第二基板上的方法，第一分离层设置在第一基板上并且通过处理可分离，其中第二基板上的区域 要转移功能区域具有可通过处理分离的第二分离层。 该方法包括通过接合将第一基板接合到第二基板的步骤，使得功能区域接触第二分离层; 在第一分离层处分离功能区域与第一基板的步骤; 以及在分离步骤之前或之后的步骤，从第二基板的表面形成穿过第二基板和第二分离层的分离槽，该表面与其上具有第二分离层的表面相对。

公开(公告)号：US08053335B2

公开(公告)日：2011-11-08

申请号：US12611791

申请日：2009-11-03

申请人： Takao Yonehara

发明人： Takao Yonehara

IPC分类号： H01L21/52 ,  H01L21/50

CPC分类号： H01L21/0254 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0079

摘要： A method includes forming a first layer containing silicon oxide on a first substrate, partially removing the first layer to form an exposure portion on the first substrate, depositing amorphous gallium nitride system compound semiconductor on the first substrate with the exposure portion, evaporating the semiconductor on the first layer to form cores of the semiconductor on the exposure portion of the first substrate, forming an epitaxial layer of the semiconductor on the first substrate, and removing the epitaxial layer of the semiconductor on the exposure portion on the first substrate to form a separating groove.

摘要翻译： 一种方法包括在第一衬底上形成含有氧化硅的第一层，部分去除第一层以在第一衬底上形成曝光部分，在第一衬底上用曝光部分沉积非晶氮化镓系化合物半导体，将半导体蒸发 所述第一层在所述第一基板的曝光部分上形成所述半导体的芯，在所述第一基板上形成所述半导体的外延层，以及在所述第一基板上的所述曝光部分上去除所述半导体的外延层，以形成分离 槽。

公开(公告)号：US20110013926A1

公开(公告)日：2011-01-20

申请号：US12922447

申请日：2009-04-28

申请人： Takao Yonehara

发明人： Takao Yonehara

IPC分类号： G03G21/20 ,  F21V5/04 ,  F21V29/00

CPC分类号： B41J2/451

摘要： A light-emitting unit having an arrayed light source comprises a substrate; an arrayed light source group containing the arrayed light source arranged in a first direction; a lens array for focusing the light emitted from light emitting elements constituting the arrayed light source; and a lens support having a cavity formed between arrayed light source group and the lens array; the lens support having a first hole for introducing a fluid into the cavity, and a second hole for discharging the introduced fluid in a second direction crossing the first direction.

摘要翻译： 具有排列光源的发光单元包括基板; 包含沿第一方向排列的排列光源的排列光源组; 用于聚焦从构成阵列光源的发光元件发出的光的透镜阵列; 以及透镜支架，其具有形成在排列的光源组和透镜阵列之间的空腔; 所述透镜支架具有用于将流体引入所述空腔的第一孔，以及用于沿与所述第一方向交叉的第二方向排出所述引入流体的第二孔。

公开(公告)号：US20100110157A1

公开(公告)日：2010-05-06

申请号：US12611739

申请日：2009-11-03

申请人： Takao Yonehara ,  Yasuyoshi Takai

发明人： Takao Yonehara ,  Yasuyoshi Takai

IPC分类号： B41J2/385 ,  H01L21/30 ,  H01L33/00

CPC分类号： H01L33/0079 ,  B41J2/45 ,  H01L21/6835 ,  H01L25/167 ,  H01L27/153 ,  H01L2221/68322 ,  H01L2221/68368 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method includes arranging a first bonding layer on a first functional region on a first substrate, or a region on a second substrate, bonding the first functional region to the second substrate through the first bonding layer, subjecting a first release layer to a first process to separate the first substrate from the first functional region at the first release layer, arranging a second bonding layer on a second functional region on the first substrate, or a region on a third substrate, bonding the second functional region to the second or third substrate through the second bonding layer, and subjecting a second release layer to a second process to separate the first substrate from the second functional region at the second release layer.

摘要翻译： 一种方法包括：在第一基板上的第一功能区域或第二基板上的区域上布置第一接合层，通过第一接合层将第一功能区域与第二基板接合，使第一释放层进行第一处理 在第一释放层处将第一基板与第一功能区域分开，在第一基板上的第二功能区域或第三基板上的区域上布置第二接合层，将第二功能区域结合到第二或第三基板 通过第二接合层，并且使第二剥离层进行第二工序，以将第一衬底与第二剥离层处的第二功能区分离。

公开(公告)号：US20100109024A1

公开(公告)日：2010-05-06

申请号：US12611770

申请日：2009-11-03

申请人： Takao Yonehara ,  Yasuyoshi Takai

发明人： Takao Yonehara ,  Yasuyoshi Takai

IPC分类号： H01L31/12 ,  H01L21/762 ,  H01L27/15

CPC分类号： H01L27/153 ,  B41J2/45 ,  H01L33/0079

摘要： A method includes arranging a bonding layer of a predetermined thickness on at least one of a first functional region bonded on a release layer, which is capable of falling into a releasable condition when subjected to a process, on a first substrate, and a region, to which the first functional region is to be transferred, on a second substrate; bonding the first functional region to the second substrate through the bonding layer; and separating the first substrate from the first functional region at the release layer.

摘要翻译： 一种方法包括在第一基板和区域上将预定厚度的接合层布置在接合在分离层上的第一功能区域中，该第一功能区域能够在经受处理时落入可释放状态中， 第一功能区域将被转移到第二基板上; 通过所述接合层将所述第一功能区域接合到所述第二基板; 以及在所述剥离层处将所述第一衬底与所述第一功能区分离。

公开(公告)号：US07550305B2

公开(公告)日：2009-06-23

申请号：US11874452

申请日：2007-10-18

申请人： Kenji Yamagata ,  Takao Yonehara ,  Yoshinobu Sekiguchi ,  Kojiro Nishi

发明人： Kenji Yamagata ,  Takao Yonehara ,  Yoshinobu Sekiguchi ,  Kojiro Nishi

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L33/0079 ,  H01L33/08 ,  H01L33/20

摘要： An object of the present invention is to provide a method of forming a light-emitting element at a lower cost than a conventional cost with suppressing the deterioration of the substrate due to thermal distortion in comparison with a conventional method of recycling a substrate and further having an effect equal to that of the method of recycling a substrate. The method of forming a light-emitting element by growing a separation layer and a light-emitting layer in this order on a first substrate, bonding the light-emitting layer onto a second substrate, and removing the separation layer to form the light-emitting layer on the second substrate, includes growing a plurality of groups each containing the separation layer and light-emitting layer on the first substrate; patterning the light-emitting layer existing as a uppermost layer into an island shape, and then bonding the light-emitting layer onto the second substrate, and etching the separation layer adjacent to the light-emitting layer patterned into the island shape to form the light-emitting layer patterned into the island shape on the second substrate.

摘要翻译： 本发明的目的是提供一种以比常规成本低的成本形成发光元件的方法，与常规的基板再循环方法相比，可以抑制由于热变形引起的基板的劣化，并且还具有 其效果与回收基材的方法相同。 通过在第一基板上依次生长分离层和发光层来形成发光元件的方法，将发光层接合到第二基板上，并且去除分离层以形成发光 包括在第一基板上生长各自包含分离层和发光层的多个基团; 将作为最上层存在的发光层图案化为岛状，然后将发光层接合到第二基板上，并且蚀刻与图案化为岛状的发光层相邻的分离层，以形成光 在第二基板上图案化成岛状的发光层。