公开(公告)号：US20220258416A1

公开(公告)日：2022-08-18

申请号：US17740029

申请日：2022-05-09

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Ning GE ,  Steven J. SIMSKE ,  Andrew E. FITZHUGH ,  Lihua ZHAO

IPC: B29C64/165 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y40/00 ,  B29C64/214 ,  B29C64/357 ,  B29C64/245 ,  B29C64/286 ,  B29C64/371

Abstract: According to an example, an apparatus may include an agent delivery device to selectively deliver an agent onto a layer of build material particles. The apparatus may also include an energy source to apply energy onto the layer of build material particles to selectively fuse the build material particles in the layer based upon the locations at which the agent was delivered and a chamber formed of a plurality of walls, in which the agent delivery device and the energy source are housed inside the chamber. The apparatus may further include a vapor source to supply vapor into the chamber to wet the build material particles inside the chamber.

公开(公告)号：US20210211983A1

公开(公告)日：2021-07-08

申请号：US16075694

申请日：2017-01-31

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning GE ,  Tyler SIMS ,  Helen A. HOLDER ,  Robert IONESCU ,  Rongliang ZHOU

IPC: H04W52/02 ,  H04L5/00 ,  G11C13/00

Abstract: One example of a device includes an antenna, a memristor code comparator, and a controller. The antenna is to receive a wake up signal. The memristor code comparator is to compare the wake up signal to a reference signal. The controller is to provide a trigger signal to wake up the device in response to the wake up signal matching the reference signal.

公开(公告)号：US20210190694A1

公开(公告)日：2021-06-24

申请号：US16074298

申请日：2016-04-20

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning GE ,  Anita ROGACS ,  Viktor SHKOLNIKOV ,  Alexander GOVYADINOV

IPC: G01N21/65

Abstract: A surface enhanced Raman scattering (SERS) sensor may include a substrate, an electrically conductive layer having a first portion spaced from a second portion by a gap, an electrically resistive layer in contact with and extending between the first portion and the second portion of the electrically conductive layer to form an electrically resistive bridge across the gap that heats the nano fingers in response to electrical current flowing across the bridge from the first portion to the second portion and nano fingers extending upward from the bridge.

公开(公告)号：US20180022103A1

公开(公告)日：2018-01-25

申请号：US15546085

申请日：2015-04-10

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning GE ,  Zhiyong LI ,  Ser Chia KOH ,  Chaw Sing HO

IPC: B41J2/175 ,  H01L27/11521

CPC classification number: B41J2/17546 ,  B41J2/14016 ,  B41J2/175 ,  B41J2/1753 ,  B41J2202/17 ,  H01L27/11521 ,  H01L29/4916 ,  H01L29/517

Abstract: In one example in accordance with the present disclosure a printhead with a number of EPROM cells is described. The printhead deposits fluid onto a print medium. The printhead also includes a number of EPROM cells. Each EPROM cell includes a substrate having a source and a drain disposed therein, a floating gate separated from the substrate by a first dielectric layer. The floating gate includes a multi-metal layer that is a metal etched layer. Each EPROM cell also includes a control gate separated from the multi-metal layer of the floating gate by a second dielectric layer.

公开(公告)号：US20170279044A1

公开(公告)日：2017-09-28

申请号：US15512141

申请日：2014-09-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning GE ,  Jianhua YANG ,  Zhiyong LI ,  Minxian ZHANG ,  Katy Samuels

IPC: H01L45/00 ,  B41J2/175

CPC classification number: H01L45/1233 ,  B41J2/1753 ,  B41J2/17546 ,  H01L45/04 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

Abstract: An example memristor includes a first conductive layer, a switching layer, and a second conductive layer. The first conductive layer may include a first conductive material and a second conductive material. The second conductive material may have a higher diffusivity than the first conductive material. The switching layer may be coupled to the first conductive layer and may include a first oxide having the first conductive material and a second oxide having the second conductive material. The second conductive layer may be coupled to the switching layer.

公开(公告)号：US20170239941A1

公开(公告)日：2017-08-24

申请号：US15518934

申请日：2014-10-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Jianwen LUO ,  Leong Yap CHIA ,  Ning GE

IPC: B41J2/045 ,  B41J2/175

CPC classification number: B41J2/04541 ,  B41J2/0458 ,  B41J2/04581 ,  B41J2/1753 ,  B41J2/17546 ,  B41J2202/17

Abstract: A print head with a number of memristors and inverters is described. The print head includes a number of nozzles to deposit an amount of fluid onto a print medium. Each nozzle includes a firing chamber to hold the amount of fluid, an opening to dispense the amount of fluid onto the print medium, and an ejector to eject the amount of fluid through the opening. The print head also includes a number of memristor cells. Each memristor cell includes a memristor to store data, a voltage divider serially connected to the 116 memristor cell, and an inverter connected in parallel with the number of memristor cells and the voltage divider.

公开(公告)号：US20170203561A1

公开(公告)日：2017-07-20

申请号：US15326089

申请日：2014-07-26

Applicant: HEWLETT- PACKARD DEVELOPMENT COMPANY, L.P .

Inventor： Ning GE ,  Jianhua YANG ,  Zhiyong LI

IPC: B41J2/045

CPC classification number: B41J2/04541 ,  B41J2/0455 ,  B41J2/0458 ,  B41J2/04581 ,  B41J2/1753 ,  B41J2/17546 ,  B41J2/17566 ,  B41J2002/17579 ,  B41J2202/13

Abstract: A printhead with a number of memristors and a parallel current distributor is described. The printhead includes a number of nozzles to deposit an amount of fluid onto a print medium. Each nozzle includes a firing chamber to hold the amount of fluid, an opening to dispense the amount of fluid onto the print medium, and an ejector to eject the amount of fluid through the opening. The printhead also includes a number of memristor cells. Each memristor cell includes a memristor to store information and a multiplexing component to select a memristor. The printhead also includes and at least one current distributor connected in parallel to a number of memristor cells.

公开(公告)号：US20170151783A1

公开(公告)日：2017-06-01

申请号：US15127548

申请日：2014-04-03

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning GE ,  Hang-Ru GOY ,  Boon Bing NG ,  Shane O'Brien ,  Mun Hooi Yaow

IPC: B41J2/14 ,  B41J2/16

CPC classification number: B41J2/14112 ,  B41J2/04533 ,  B41J2/14056 ,  B41J2/14129 ,  B41J2/1601 ,  B41J2/1632 ,  B41J2202/13

Abstract: An example provides a fluid ejection apparatus including a first firing resistor and a second firing resistor to selectively cause fluid to be ejected through a single nozzle, and a parasitic resistor arranged to add a parasitic resistance to the first firing resistor.

公开(公告)号：US20170147212A1

公开(公告)日：2017-05-25

申请号：US15416813

申请日：2017-01-26

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning GE ,  Paul I. MIKULAN ,  Bee Ling PEH

IPC: G06F3/06 ,  B41J2/045

CPC classification number: G06F3/061 ,  B41J2/04541 ,  B41J2/04581 ,  B41J2/04586 ,  G06F3/0655 ,  G06F3/0688 ,  G11C11/5621 ,  G11C16/0433 ,  G11C16/0458 ,  H01L27/11521 ,  H01L29/7881 ,  H01L29/7887

Abstract: An integrated circuit including a first EPROM, a second EPROM, and a circuit. The first EPROM is configured to provide a first state and a second state. The second EPROM is configured to provide a third state and a fourth state. The circuit is configured to select the first EPROM and the second EPROM individually and in parallel with each other.

公开(公告)号：US20170069639A1

公开(公告)日：2017-03-09

申请号：US15119989

申请日：2014-03-14

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning GE ,  Leong Yap CHIA ,  Jose Jehrome Rando

IPC: H01L27/115 ,  H01L29/788 ,  B41J2/14 ,  H01L29/423

CPC classification number: H01L27/11519 ,  B41J2/14 ,  H01L21/28273 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/4238 ,  H01L29/78 ,  H01L29/7881

Abstract: An electronically programmable read-only memory (EPROM) cell includes a semiconductor substrate having source and drain regions; a floating gate, adjacent to the source and drain regions and separated from the semiconductor substrate by a first dielectric layer, the floating gate including: a polysilicon layer formed over the first dielectric layer; a first metal layer electrically connected to the polysilicon layer, where the surface area of the first metal layer is less than 1000 μm2; and a control gate comprising a second metal layer, capacitively coupled to the first metal layer through a second dielectric material disposed therebetween.

Abstract translation: 电子可编程只读存储器（EPROM）单元包括具有源区和漏区的半导体衬底; 浮置栅极，与源极和漏极区相邻并且通过第一介电层与半导体衬底分离，所述浮置栅极包括：形成在第一介电层上的多晶硅层; 电连接到多晶硅层的第一金属层，其中第一金属层的表面积小于1000μm2; 以及包括第二金属层的控制栅极，所述第二金属层通过设置在其间的第二介电材料电容耦合到所述第一金属层。