公开(公告)号：US07563901B2

公开(公告)日：2009-07-21

申请号：US12071120

申请日：2008-02-15

申请人： Toshiro Sasaki ,  Takashi Ando ,  Yasuo Yamamoto ,  Takahiro Imai ,  Dai Kubota ,  Katsuhiko Noguchi ,  Nobuyuki Hori ,  Eiki Shitara ,  Kunio Atsumi ,  Shohei Yasuda

发明人： Toshiro Sasaki ,  Takashi Ando ,  Yasuo Yamamoto ,  Takahiro Imai ,  Dai Kubota ,  Katsuhiko Noguchi ,  Nobuyuki Hori ,  Eiki Shitara ,  Kunio Atsumi ,  Shohei Yasuda

IPC分类号： C07D513/02 ,  A61K31/429

CPC分类号： C07D513/04 ,  C07F9/6561 ,  Y02P20/55

摘要： The present invention relates to compounds represented by formula (1) and a process for producing the same. The use of these compounds can realize the production of carbapenem derivatives having potent antimicrobial activity and a wide antimicrobial spectrum in a safe and cost-effective manner.

公开(公告)号：US07534360B2

公开(公告)日：2009-05-19

申请号：US10774417

申请日：2004-02-10

申请人： Yoshiki Nishibayashi ,  Kiichi Meguro ,  Takahiro Imai ,  Yutaka Ando

发明人： Yoshiki Nishibayashi ,  Kiichi Meguro ,  Takahiro Imai ,  Yutaka Ando

IPC分类号： C23F1/00

CPC分类号： H01J9/025 ,  C30B29/04 ,  C30B33/00 ,  H01J1/3044 ,  Y10T428/24355 ,  Y10T428/24628 ,  Y10T428/30

摘要： The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.

公开(公告)号：US07476895B2

公开(公告)日：2009-01-13

申请号：US11651502

申请日：2007-01-10

申请人： Akihiko Namba ,  Takahiro Imai ,  Yoshiki Nishibayashi

发明人： Akihiko Namba ,  Takahiro Imai ,  Yoshiki Nishibayashi

IPC分类号： H01L29/04 ,  H01L31/20 ,  H01L31/036 ,  H01L31/0376

CPC分类号： C30B25/02 ,  C30B29/04 ,  H01L21/02376 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02444 ,  H01L21/02494 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/041 ,  H01L29/66022 ,  H01L29/66037

摘要： An n-type diamond epitaxial layer 20 is formed by processing a single-crystalline {100} diamond substrate 10 so as to form a {111} plane, and subsequently by causing diamond to epitaxially grow while n-doping the diamond {111} plane. Further, a combination of the n-type semiconductor diamond, p-type semiconductor diamond, and non-doped diamond, obtained in the above-described way, as well as the use of p-type single-crystalline {100} diamond substrate allow for a pn junction type, a pnp junction type, an npn junction type and a pin junction type semiconductor diamond to be obtained.

摘要翻译： 通过处理单晶{100}金刚石衬底10以形成{111}面，然后通过使金刚石外延生长同时n掺杂金刚石{111}面而形成n型金刚石外延层20 。 此外，以上述方式获得的n型半导体金刚石，p型半导体金刚石和非掺杂金刚石以及使用p型单晶{100}金刚石衬底的组合允许 对于pn结型，pnp结型，npn结型和pin结型半导体金刚石。

公开(公告)号：US07432521B2

公开(公告)日：2008-10-07

申请号：US10526471

申请日：2004-03-05

申请人： Natsuo Tatsumi ,  Yoshiki Nishibayashi ,  Takahiro Imai ,  Tsuneo Nakahara

发明人： Natsuo Tatsumi ,  Yoshiki Nishibayashi ,  Takahiro Imai ,  Tsuneo Nakahara

IPC分类号： H01L29/06

CPC分类号： H03K19/06 ,  H01J19/24 ,  H01J21/20 ,  H03K19/08

摘要： A logical operation element and logical operation circuit are provided that are capable of high speed and a high degree of integration.A logical operation circuit has a construction wherein, in a logical operation element, the anodes of first and second field emission type microfabricated electron emitters are put at the same potential and two or more signal voltages are input to gate electrodes corresponding to these emitters. A NOR element so arranged that when a high potential input signal is input to either of the two lines, electron emission occurs from the emitters and the potential of said anodes is lowered, and a NAND element wherein the cathodes of the first and second field emission type microfabricated electron emitters are connected in series, two signal voltages are applied to the gate electrodes corresponding to the first and second emitter and the anode potential of the second emitter is lowered when the two input signals are high potential are employed.

摘要翻译： 提供了能够高速度和高集成度的逻辑运算元件和逻辑运算电路。 逻辑运算电路具有这样的结构，其中在逻辑运算元件中，将第一和第二场致发射型微细加电子发射体的阳极置于相同的电位，并将两个或更多个信号电压输入到对应于这些发射极的栅电极。 一种NOR元件，其被布置成当高电位输入信号被输入到两条线中的任一条时，从发射极发生电子发射，并且所述阳极的电位降低;以及NAND元件，其中第一和第二场致发射的阴极 类型的微制造电子发射体串联连接时，两个信号电压施加到对应于第一和第二发射极的栅电极，并且当采用两个输入信号为高电位时，第二发射极的阳极电位降低。

公开(公告)号：US07418109B2

公开(公告)日：2008-08-26

申请号：US10479846

申请日：2002-06-13

申请人： Yoshio Sakamoto ,  Takahiro Imai

发明人： Yoshio Sakamoto ,  Takahiro Imai

IPC分类号： H04R1/00 ,  H04R9/06 ,  H04R11/02 ,  G10K13/00

CPC分类号： H04R23/008 ,  G06F19/22 ,  H04R7/14 ,  H04R7/18 ,  H04R7/20 ,  H04R2307/207

摘要： A diaphragm (1) of a light sound converter which has a high performance, is suitable for mass-production and has a slit (1s) formed therein. A light emitting element and a light receiving element are disposed at positions opposed to a reflective part (1a) of the diaphragm (1) having a pressure receiving surface part (1d) and the reflective part (1a), and light is radiated from the light emitting element to the reflective part (1a) of the diaphragm (1) and the reflected light from the reflective part (1a) is received by the light receiving element, whereby the position of the diaphragm (1) can be detected.

摘要翻译： 具有高性能的光声转换器的隔膜（1）适于批量生产并且在其中形成狭缝（1s）。 发光元件和受光元件设置在与具有压力接收表面部分（1d）和反射部分（1a）的隔膜（1）的反射部分（1a）相对的位置处，并且光线 从光发射元件辐射到光阑（1）的反射部分（1a）并且来自反射部分（1a）的反射光被光接收元件接收，由此隔膜（1）的位置可以 被检测。

公开(公告)号：US20080164802A1

公开(公告)日：2008-07-10

申请号：US11665455

申请日：2006-06-19

申请人： Yoshiki Nishibayashi ,  Akihiko Uedo ,  Yoshiyuki Yamamoto ,  Takahiro Imai

发明人： Yoshiki Nishibayashi ,  Akihiko Uedo ,  Yoshiyuki Yamamoto ,  Takahiro Imai

IPC分类号： H01J1/14 ,  H01L29/16

CPC分类号： H01J1/15 ,  H01J1/14 ,  H01J37/06 ,  H01J2237/06308 ,  H01J2237/06316

摘要： An object of the present invention is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are used in electron beam and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and electronic devices that uses such electron emission cathode and electron emission source. A diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof, the diamond electron emission cathode being in a columnar form having a sharpened acute section in one place of an electron emitting portion and being constituted by at least two types of semiconductors that differ in electric properties. One of the types constituting the semiconductors is a n-type semiconductor comprising n-type impurities at 2×1015 cm−3 or higher, the other type is a p-type semiconductor comprising p-type impurities at 2×1015 cm−3 or higher, the p-type semiconductor and the n-type semiconductor are joined, an electric potential that is negative with respect to the p-type semiconductor is applied with a pair of current introducing terminals to the n-type semiconductor so that electrons flow from the n-type semiconductor to the p-type semiconductor, and the n-type semiconductor has a component in which electrons flow to the electron emitting portion.

摘要翻译： 本发明的目的是提供一种使用金刚石的电子发射阴极和电子发射源，并且具有用于电子束和电子束装置以及真空管，特别是电子显微镜的高亮度和小的能量宽度 电子束曝光装置和使用这种电子发射阴极和电子发射源的电子装置。 根据本发明的金刚石电子发射阴极在其至少一部分中具有单晶金刚石，金刚石电子发射阴极呈柱形，在一个电子发射部分的位置具有锐化的锐角部分，并且由至少两个 电性能不同的半导体类型。 构成半导体的类型之一是包括2×10 15 -3 -3以上的n型杂质的n型半导体，另一种是p型半导体 包括2×10 15 cm -3以上的p型杂质，p型半导体和n型半导体接合，相对于 向p型半导体施加一对电流引入端子到n型半导体，使得电子从n型半导体流向p型半导体，并且n型半导体具有其中电子 流向电子发射部分。

公开(公告)号：US07354318B2

公开(公告)日：2008-04-08

申请号：US10665833

申请日：2003-09-18

申请人： Masakazu Murakami ,  Takahiro Imai ,  Tamaki Takabayashi ,  Takenobu Yabu ,  Syougo Tomita ,  Seiichi Ueno ,  Katsunori Takeda

发明人： Masakazu Murakami ,  Takahiro Imai ,  Tamaki Takabayashi ,  Takenobu Yabu ,  Syougo Tomita ,  Seiichi Ueno ,  Katsunori Takeda

IPC分类号： H01R13/502

CPC分类号： H01R13/514 ,  H01R4/185 ,  H01R13/6658 ,  H01R31/08 ,  H01R2201/26

摘要： A joint connector according to the present invention is provided with a circuit board, a male connector having male terminals provided on the circuit board at a predetermined interval and standing in one direction and a direction that crosses the one direction, the male terminals being selectively connected by a copper foil circuit, and a female connector in which female connector elements each having female terminals inserted and interlocked in female terminal holders are stacked, wherein the male connector and the female connector are fit to each other. This achieves cost reduction and improvement in work efficiency in electric wire connection by attaining easy electric wire connection and branching.

摘要翻译： 根据本发明的接头连接器设置有电路板，阳连接器，具有以预定间隔设置在电路板上的阳端子，并且沿一个方向和与该一个方向交叉的方向竖立，阳端子被选择性地连接 通过铜箔电路和阴连接器，其中，阴连接器元件各自具有插入并互锁在阴端子保持器中的阴端子，其中阳连接器和阴连接器彼此配合。 通过实现容易的电线连接和分支，可实现电线连接的成本降低和工作效率的提高。

公开(公告)号：US20080044647A1

公开(公告)日：2008-02-21

申请号：US10594718

申请日：2005-03-24

申请人： Yoshiki Nishibayashi ,  Tomihito Miyazaki ,  Tetsuya Hattori ,  Takahiro Imai

发明人： Yoshiki Nishibayashi ,  Tomihito Miyazaki ,  Tetsuya Hattori ,  Takahiro Imai

IPC分类号： H01J9/02 ,  B82B3/00 ,  G01N13/16 ,  H01J1/304

CPC分类号： B81C1/00111 ,  H01J9/025 ,  H01J2329/0415 ,  H01J2329/0447 ,  Y10T428/26

摘要： This method of forming a carbonaceous material projection structure includes: the step of applying a resist 11 onto a diamond substrate 10; the step of forming holes 12 in the applied resist 11, the holes 12 being provided according to a predetermined arrangement, a wall 12b of each of the holes 12 being inversely tapered from an aperture 12a toward a bottom; the step of depositing a mask material through the aperture 12a to form a mask deposition 14 in each of the holes 12; the step of lifting off a mask material 13 deposited on the resist 11 together with the resist 11; and etching the diamond substrate 10 using the mask deposition 14 as a mask to form a carbonaceous material projection.

摘要翻译： 这种形成碳质材料投影结构的方法包括：将抗蚀剂11涂覆在金刚石基板10上的步骤; 在施加的抗蚀剂11中形成孔12的步骤，孔12根据预定布置设置，每个孔12的壁12b从孔12a向底部呈倒锥形; 通过孔12a沉积掩模材料以在每个孔12中形成掩模沉积14的步骤; 剥离与抗蚀剂11一起沉积在抗蚀剂11上的掩模材料13的步骤; 并使用掩模沉积14作为掩模蚀刻金刚石基板10，以形成碳质材料凸起。

公开(公告)号：US07147918B2

公开(公告)日：2006-12-12

申请号：US10661591

申请日：2003-09-15

申请人： Yoshiki Nishibayashi ,  Yutaka Ando ,  Takahiro Imai

发明人： Yoshiki Nishibayashi ,  Yutaka Ando ,  Takahiro Imai

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/34 ,  Y10T428/30

摘要： A diamond electron emission element is provided with a substrate, and a plurality of quadrangular columns (microscopic projections) composed of diamond and with side faces of flat faces, which are arranged at equal intervals on the substrate. A top end face (horizontal section) is of a quadrangular shape having a length of long sides being a [nm] and a length of short sides being ka [nm], and a thin film of SiO2 is formed on a side face on the short-edge side. The length a [nm] of long sides and the length ka [nm] of short sides satisfy relational expressions of Formulae (1) and (2) below. C1=2a√{square root over (1+k2)}  (1) nλ=C1  (2) C1: a distance [nm] of a lap in a situation where light generated inside each quadrangular column goes around on a specific circuit while being reflected on the side faces of the quadrangular column, n: an arbitrary positive integer, and λ: an emission peak wavelength λ [nm] of the diamond making the quadrangular columns.

摘要翻译： 金刚石电子发射元件设置有基板，并且由金刚石构成的多个四边形柱（微观突起）和平面的侧面以等间隔布置在基板上。 顶端面（水平截面）为四边形，长边长为[nm]，短边长为ka [nm]，SiO 2薄膜为薄膜， 形成在短边侧的侧面上。 长边的长度a [nm]和短边的长度ka [nm]满足下面的式（1）和（2）的关系式。 <？in-line-formula description =“In-line Formulas”end =“lead”？> C =2a√{平方根超过（1 + k < ）}（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula”end =“lead”？> nlambda （2）<？in-line-formula description =“In-line Formulas”end =“tail”？> C 1 ：距离[nm] 在每个四边形列内产生的光在特定电路上绕过同时在四边形柱的侧面反射的情况下，一圈的任意正整数，λ：发射峰值波长λ[nm] 钻石制作四边形柱。

公开(公告)号：US20060216220A1

公开(公告)日：2006-09-28

申请号：US11388970

申请日：2006-03-27

申请人： Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Takahiro Imai

发明人： Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Takahiro Imai

IPC分类号： B01J3/06 ,  C01B31/06 ,  C23C16/00

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/04

摘要： A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.

摘要翻译： 一种用于制造金刚石单晶衬底的方法，其中通过气相合成从用作种子衬底的金刚石单晶生长单晶，所述方法包括：制备金刚石单晶种子衬底，其具有主表面，其平面 作为种子基材，相对于{100}面或{111}面，取向落入不大于8度的倾斜范围内; 通过机械加工形成在主面的外周方向相对于该种籽基板的一侧的主面倾斜的多个不同取向的面; 然后通过气相合成生长金刚石单晶。