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146 条记录 (耗时 0.033 秒)

    FLUID DYNAMIC BEARING DEVICE, SPINDLE MOTOR INCLUDING THE SAME, READ-WRITE DEVICE, AND METHOD OF MANUFACTURING BEARING PART
    41.
    发明申请
    FLUID DYNAMIC BEARING DEVICE, SPINDLE MOTOR INCLUDING THE SAME, READ-WRITE DEVICE, AND METHOD OF MANUFACTURING BEARING PART 审中-公开
    流体动力轴承装置，包括其的主轴电机，读写装置和制造轴承部件的方法

    公开(公告)号：US20080204929A1

    公开(公告)日：2008-08-28

    申请号：US12031099

    申请日：2008-02-14

    申请人： Shoji Masazuki ,  Toshifumi Hino ,  Kenichi Yano ,  Nobuhiko Sato

    发明人： Shoji Masazuki ,  Toshifumi Hino ,  Kenichi Yano ,  Nobuhiko Sato

    IPC分类号： G11B5/33 ,  F16C32/06 ,  H02K7/08

    CPC分类号： G06G7/14 ,  F16C17/107 ,  F16C33/14 ,  F16C2220/70 ,  F16C2223/04 ,  F16C2223/80

    摘要： An object of the present invention is to provide a method of manufacturing a fluid dynamic bearing device and a bearing part for a thrust bearing, both of which are applied to a flat and thin bearing part and are capable of preventing abrasion and scratching even if two parts make contact with each other. A fluid dynamic bearing mechanism 40 includes a shaft 1 functioning as an axis of rotational, a sleeve, a flange 3, a thrust plate 4, and a thrust bearing portion 22. The sleeve is disposed on the outer peripheral side of the shaft. The flange is disposed in the vicinity of the end portion of the shaft, and includes a bottom surface 3c perpendicular to a central axis direction of the shaft. A thrust receiver includes a front surface 4a opposed to the bottom surface. The thrust bearing portion is formed between the bottom surface and the front surface, and includes a plurality of thrust dynamic generation grooves 3a formed on the bottom surface. Particulates with hardness higher than that of the top surface are diffused and disposed on the bottom surface, and are then implanted in the bottom surface by applying pressure such that a portion of the particulates extends therefrom.

    摘要翻译： 本发明的目的是提供一种用于制造流体动力轴承装置的方法和用于推力轴承的轴承部件，两者都被应用于平坦且薄的轴承部件，并且即使两个轴承部件也能够防止磨损和划伤 零件互相接触。 流体动力轴承机构40包括用作旋转轴线的轴1，套筒，凸缘3，止推板4和止推轴承部分22。 套筒设置在轴的外周侧。 凸缘设置在轴的端部附近，并且包括垂直于轴的中心轴线方向的底面3c。 推力接收器包括与底表面相对的前表面4a。 止推轴承部分形成在底表面和前表面之间，并且包括形成在底表面上的多个推力动力产生槽3a。 硬度高于上表面的颗粒被扩散并设置在底表面上，然后通过施加压力使得一部分微粒从其延伸而被植入到底表面中。

    PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS
    42.
    发明申请
    PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS 有权
    使用光电转换装置的光电转换装置和图像拾取系统

    公开(公告)号：US20080203450A1

    公开(公告)日：2008-08-28

    申请号：US12026623

    申请日：2008-02-06

    申请人： Hiroaki Naruse ,  Takashi Okagawa ,  Ryuichi Mishima ,  Nobuhiko Sato ,  Hiroshi Yuzurihara

    发明人： Hiroaki Naruse ,  Takashi Okagawa ,  Ryuichi Mishima ,  Nobuhiko Sato ,  Hiroshi Yuzurihara

    IPC分类号： H01L31/00

    CPC分类号： H01L27/14636 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/53238 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.

    摘要翻译： 光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及 电连接到第二插头的布线形成双镶嵌结构的一部分。 通过这样的结构，可以提高光到光电转换元件的入射效率。

    Semiconductor member, manufacturing method thereof, and semiconductor device
    45.
    发明申请
    Semiconductor member, manufacturing method thereof, and semiconductor device 失效
    半导体元件及其制造方法以及半导体器件

    公开(公告)号：US20060113635A1

    公开(公告)日：2006-06-01

    申请号：US10540261

    申请日：2004-12-14

    申请人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

    发明人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

    IPC分类号： H01L21/20 ,  H01L31/117

    CPC分类号： H01L29/78687 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0262 ,  H01L21/76259 ,  H01L29/1054

    摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain induction porous layer or a porous silicon layer and strain induction porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain induction porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.

    摘要翻译： SiGe层生长在硅衬底上。 SiGe层或硅衬底和SiGe层通过对SiGe层进行阳极氧化以形成应变感应多孔层或多孔硅层和应变感应多孔层而被开孔化。 在所得结构上形成SiGe层和应变硅层。 层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。 因此，可以形成具有低缺陷密度和高浓度的SiGe层。 由于应变感应多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。 可以获得具有高应变硅层的高质量半导体衬底。

    Electrochemical processing apparatus and method
    46.
    发明申请
    Electrochemical processing apparatus and method 审中-公开
    电化学处理装置及方法

    公开(公告)号：US20060070884A1

    公开(公告)日：2006-04-06

    申请号：US11245912

    申请日：2005-10-06

    申请人： Kazutaka Momoi ,  Kazutaka Yanaqita ,  Nobuhiko Sato

    发明人： Kazutaka Momoi ,  Kazutaka Yanaqita ,  Nobuhiko Sato

    IPC分类号： C25D5/02

    CPC分类号： C25D17/10 ,  C25D5/02 ,  C25D11/005 ,  C25D11/02

    摘要： A processing apparatus electrochemically processes part of a first surface of a member having the first surface and a second surface. The processing apparatus includes a support which supports the member to expose the first surface, a first electrode which is arranged to oppose a first portion of the first surface, a second electrode which is arranged to oppose a second portion of the first surface, a third electrode which applies a potential to the member from a second surface side, and a processing bath to fill a space defined by the first and second electrodes and the member with a processing liquid.

    摘要翻译： 一种处理装置，电化学处理具有第一表面和第二表面的构件的第一表面的一部分。 处理装置包括支撑构件以露出第一表面的支撑件，布置成与第一表面的第一部分相对的第一电极，布置成与第一表面的第二部分相对的第二电极，第三电极 电极，其从第二表面侧向构件施加电位;以及处理槽，用处理液填充由第一和第二电极和构件限定的空间。

    Semiconductor member manufacturing method and semiconductor device manufacturing method
    48.
    发明授权
    Semiconductor member manufacturing method and semiconductor device manufacturing method 失效
    半导体元件制造方法及半导体器件的制造方法

    公开(公告)号：US06828214B2

    公开(公告)日：2004-12-07

    申请号：US10112751

    申请日：2002-04-02

    申请人： Kazuya Notsu ,  Nobuhiko Sato

    发明人： Kazuya Notsu ,  Nobuhiko Sato

    IPC分类号： H01L2130

    CPC分类号： H01L21/76259 ,  Y10T428/12674 ,  Y10T428/24802 ,  Y10T428/24917 ,  Y10T428/249953

    摘要： This invention provides an SOI substrate manufacturing method using a transfer method (bonding and separation). A separation layer (12) is formed on a silicon substrate (11). A silicon layer (13), SiGe layer (14), silicon layer (15′), and insulating layer (21) are sequentially formed on the resultant structure to prepare a first substrate (10′). This first substrate (10′) is bonded to a second substrate (30). The bonded substrate stack is separated into two parts at the separation layer (12). Next, Ge in the SiGe layer (14) is diffused into the silicon layer (13) by hydrogen annealing. With this process, a strained SOI substrate having the SiGe layer on the insulating layer (21) and a strained silicon layer on the SiGe layer is obtained.

    摘要翻译： 本发明提供一种使用转印方法（接合和分离）的SOI衬底制造方法。 在硅衬底（11）上形成分离层（12）。 在所得结构上依次形成硅层（13），SiGe层（14），硅层（15'）和绝缘层（21），以制备第一衬底（10'）。 该第一基板（10'）结合到第二基板（30）上。 键合衬底叠层在分离层（12）处分成两部分。 接下来，SiGe层（14）中的Ge通过氢退火扩散到硅层（13）中。 通过该工艺，可以获得在绝缘层（21）上具有SiGe层的应变SOI衬底和SiGe层上的应变硅层。

    Information processing apparatus with device control language based program selection
    49.
    发明授权
    Information processing apparatus with device control language based program selection 失效
    具有设备控制语言的程序选择的信息处理设备

    公开(公告)号：US06667812B1

    公开(公告)日：2003-12-23

    申请号：US08076785

    申请日：1993-06-15

    申请人： Nobuhiko Sato ,  Satoshi Nagata ,  Yoshifumi Okamoto ,  Tetsuya Morita ,  Akihiro Shimura ,  Shunya Mitsuhashi ,  Takanori Nishijima ,  Masaki Unishi

    发明人： Nobuhiko Sato ,  Satoshi Nagata ,  Yoshifumi Okamoto ,  Tetsuya Morita ,  Akihiro Shimura ,  Shunya Mitsuhashi ,  Takanori Nishijima ,  Masaki Unishi

    IPC分类号： G06K1500

    CPC分类号： G06F3/1204 ,  G06F3/1206 ,  G06F3/1224 ,  G06F3/1226 ,  G06F3/1232 ,  G06F3/1244 ,  G06F3/1284

    摘要： An information processing apparatus acquires identification information which specifies an interpreting program for interpreting a device control language, the specified interpreting program being operable in an external device connected to the information processing apparatus. It is discriminated whether a selected first control program corresponds to the device control language interpreted by the specified interpreting program. If it is discriminated that the selected first control program does not correspond to the device control language interpreted by the specified interpreting program, a second control program corresponding to the device control language interpreted by the specified interpreting program is selected from a plurality of control programs. Data is output to the external device using the first control program or, if it is discriminated that the first control program does not correspond to the device control language, the selected second control program.

    摘要翻译： 信息处理设备获取指定用于解释设备控制语言的解释程序的识别信息，所指定的解释程序可在连接到信息处理设备的外部设备中操作。 鉴别所选择的第一控制程序是否对应​​于由指定解释程序解释的设备控制语言。 如果识别出所选择的第一控制程序与由指定的解释程序解释的设备控制语言不对应，则从多个控制程序中选择与由指定的解释程序解释的设备控制语言相对应的第二控制程序。 使用第一控制程序将数据输出到外部设备，或者如果识别出第一控制程序不对应于设备控制语言，则选择的第二控制程序。